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Lenovo - Sony
Technical Meeting
August 27, 2003
Sony Corp.
1
“Aries” Project Members
Marketing Mgr
China Local Biz Support
Akira SHIRAISHI
Edward WU/Robert GAO
China Local Tech Support
Yukihito NISHIMURA
Planning Promoter
Kazuhiko YOSHIUCHI
Electrical Mgr
Mechanical Mgr
Software Engr
Safety Engr
Takanori MARUICHI
Hiromasa IGUCHI
(Isao SUZUKI)
Kyusuke KUWAHARA
2
Factories & Manufacturing Capabilities
China
(Sony Electronics Wuxi)Cell&Pack
Japan
(Sony Fukushima)Cell& Pack
(Sony Tochigi)Cell
Taiwan
(Solectron Taiwan)Pack
Malaysia
(Sony Electronics Malaysia)Pack
3
Cell Information
 Cylindrical(US18650)
& Polymer
4
Cell Line Up for PC Battery
CELL
US18650G5
Cylindrical
Cell
Nominal
Capacity
PC Polymer
Cell
Nominal
Capacity
US18650G7
UP5541100
CY2003
CY2004
CY2005
2150mAh/8.1Wh
2400mAh/9.1Wh
K2: 2200mAh/8.3Wh
K3: 2400mAh/9.1Wh
5
US18650G7, Cell Safety Requirement

Max Charge Voltage; 4.25V/cell (Open Circuit Voltage)

Cell Temperature;
Charge ; 0 to 60 deg. C
Discharge; -20 to 70 deg. C

Charging Current ; less than 0.7C
If capacity is 2400mAh, 0.7C means;
2.4A X 0.7 = 1.68A

Discharging Current; less than 1.0C
If capacity is 2400mAh, 1C means;
2.4A X 1 = 2.4A
6
US18650G7, Electrical Info.
* Standard Charge Condition
Charge Method
Charge Up Voltage
Charge Current
Charge Time
Ambiance Temperature
: constant current constant voltage
: 4.2± 0.05V
: 1.0A
: 5.0 hours charge
o
: 23 C
at room temperature, 3.0V cut off
average capacity
3.75V (average discharge voltage)
Nominal Capacity
(0.2C discharge)
2400mAh
9.0Wh
Rated Capacity
(0.2C discharge)
2250mAh
8.4Wh
minimum capacity
Capacity at 0.5C
2350mAh (8.6Wh)
average capacity
Capacity at 1C
2300mAh (8.2Wh)
average capacity
Nominal Voltage
3.7V
Internal Impedance
55mΩ
measured by AC1kHz
Cycle Performance
80 % of Initial capacity at
300 cycles
0.7A discharge
7
US18650G7, Mechanical Info.
+0.15
φ18.2 -0.20 (Diameter of Body)
+0.2
64.9 -0.2
(φ7.2)
-0.20
φ18.2 +0.15 (Diameter of Top)
Cell Size (with plastic tube)
(0.3)
8
uP and AFE Information
 Micro
Processor---bq2083
 Analogue Front End---bq29311
9
bq-uP Diagram
Thermal Fuse with
Resistor
d-FET
Active
Fuse
c-FET
(+)
2nd Over
Charge
Protector
Analogue Front End
Micro Processor
(C)Clock
(D)Data
bq2083
bq29311
Batt _Pres
Sys _Pres
EEPROM
(2k)
Thermistor
(FETs temp.)
32kHz
Current sense
Resistor (10mΩ)
Batt_Alart
(-)
Thermistor
(Cells temp.)
*Battery_pres and Sys_pres are not necessary.
10
bq-uP Schematic (for example)
11
Mitsubishi-uP Diagram (for example)
Pre-charge
Active
Fuse
Batt +
TH1
TH1/TH2:thermistor
Data/CLK
2nd Over
Charge
Protector
Micro Processor
Data
Vdd
Mitsubishi
Clock
Batt Pre
SYS Pre
Batt Alarm
EEPROM
Clock
DIN
Analogue Front End IC
TH2
(output of each cell voltage and current
5V output, Low Battery voltage detect,
FET-SW drive,reset function)
DOUT
AOUT
(V・I
data)
0.07Ω 1/2W
Batt -
12
Mechanical Information


UL requires UL flammability “V-1” for
enclosure.
Min thickness; 0.8 mm---PC
1.2 to 1.6 mm---PC+ABS
13
Pack Structure (for example)
* Connection tab and thermal fuses are replaceable to other components.
14
Development Schedule
Fiscal year
’03/3Q
4Q
’04/1Q
2Q
3Q
4Q
10 11 12 1 2 3 4 5 6 7 8 9 10 11 12
EVT
(Hand Made Case)
DVT
(Hard Tooling Case)
Safety Application
Design
*EVT sample 2 pcs.
Hard Tooling (Min. 2 months)
*DVT sample 20 pcs.
(Min. 1.5 months)
Design Approval
PVT
*PVT sample 50 pcs.
MP
Mass Production
15
WELCOME TO
SONY ELECTRONICS WUXI(SEW)
索尼電子(無錫)有限公司
16
Wuxi Summary
Location:
Beijing
Wuxi
Shanghai
East longitude119º31’
North latitude31°7’
East of China、the center of Changjiang delta area
103Km from Shanghai、147Km from Nanjing
Area: 4,650km² DT: 517.7km²
Population: 5 million DT 1.2 million
Industry lines: Mechanism、Electronics、Light-industries、
Textile、Chemical、Pharmaceutical
GDP 120.1billion in 2000 、one of the first ten in the country
GDP RMB28,000/person、the 4th in the country
:
Traffic: Express way to SHA & Nanjing、312 National
Road、Railway to SHA & Nanjing
Education: Jiangnan University
17
New District Industrial Zone Summary
Location: At the east-south of Wuxi city, 6Km from downtown.
Character National Hi-tech Industrial Development, No. 1 of the
best 50 national hi-tech industrial development
:
Favorable policy: Income tax rate 15% (Normal area 30%,
littoral area 24%)
2 years’ income tax-free, 3 years’ income tax half-paid
Hi-tech enterprise , - 5 free 5 half
Enterprises come in this district:
America : Seagate、Kodak、GE
German : SIEMENS、BOSCH、Bayer、HOIST
Sweden : VOLVO、 Astra
English : COMINS、Rexam
Japan :
SHARP、Alps、Murata、Sumitomo、Hitachi、
National、Toshiba、Maruko、Nittobo
18
Company Profile
Date of incorporation : August 22nd/2000
● Leading Company :
Energy Company
● Ownership :
Sony China 100%, Registered Capital : US$29.5mil
● Board Chairman :
Hiroshi Nakagawa
Vice Board Chairman : Masaru Suzuki
Managing Director :
Taizo Suzuki
● Address :
62 Block, Wuxi National Hi-tech Industrial
Development Zone.
Main Products :
Lithium-Ion Polymer Battery,
Land Area :
110,000㎡, Factory-site 10,600 ㎡
● Rental Address : 52 Block, Wuxi National Hi-tech Industrial Development Zone.
Main Products : Projector TV, Factory-site 3,855㎡
● New Plant Address : 64 Block, - ditto - .
Main Products :
Electronics Devices.
Land Area :
210,000㎡, Factory-site ( Initial ) : 19,100㎡
● Employee As of Apr/2003 : 1,305 persons, include 11 persons of Japanese
(Battery)
●
19
Sony China Battery Div- Sales Network
Marketing & Sales Office
Sales Branch
Manufacture
Beijing
(北京) Branch
Shanghai
(上海)Sales &
Marketing Office
Shenzheng
(深圳) Branch
Sony Wuxi (無錫)
Electronics
Sony
Hong Kong
20
Business Terms


Development Cost :
1) NRE – New model development fee
2) Sample Fee
3) Tooling Fee
Delivery Terms :
ex-Sony Wuxi Factory or CIF Lenovo Shanghai Factory

Warranty : 12 months after manufacturing date
21
Questions


Contact window for business matter ?
(Procurement for R&D parts and MP parts)
Function of Beijing team and Shanghai
team ?
22
Appendix-1; Discharge Curves of US18650G6
Discharge Load Characteristics (US18650G6)
4.5
1W
3W
5W
7W
10W
Cell Voltage (V)
4.0
12W
15W
18W
20W
24W
3.5
3.0
2.5
Charge : 4.20Vmax 0.7CAmax 30mAcut
Discharge : 3.0Vcut
o
Temperature : 23 C
2.0
0
1
2
3
4
5
6
7
8
9
Discharge Capacity (Wh)
23
Appendix-2; Charge Curves of US18650G6
Charge Characteristics
5
2
Charge Voltage
4
1.6
Charge : 4.20Vmax 0.7Cmax
3
1.2
US18650G5
US18650G6
2
0.8
Charge Current
1
Charge Current / A
Charge Voltage / V
o
Temperature : 23 C
0.4
US18650G4
0
0
0
0.5
1
1.5
2
2.5
3
3.5
Charge time / hours
24
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