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Lecture content provided by Kenneth Connor at Rensselaer Polytechnic Institute Diodes D1 ANODE CATHODE DIODE A diode can be considered to be an electrical one-way valve. They are made from a large variety of materials including silicon, germanium, gallium arsenide, silicon carbide … Diodes In effect, diodes act like a flapper valve • Note: this is the simplest possible model of a diode Diodes For the flapper valve, a small positive pressure is required to open. Likewise, for a diode, a small positive voltage is required to turn it on. This voltage is like the voltage required to power some electrical device. It is used up turning the device on so the voltages at the two ends of the diode will differ. • The voltage required to turn on a diode is typically around 0.6-0.8 volt for a standard silicon diode and a few volts for a light emitting diode (LED) At the junction, free electrons from the N-type material fill holes from the Ptype material. This creates an insulating layer in the middle of the diode called the depletion zone. Diode V-I Characteristic For ideal diode, current flows only one way Real diode is close to ideal Ideal Diode Diode Characteristics A very large current can flow when the diode is forward biased. For power diodes, currents of a few amps can flow with bias voltages of 0.6 to 1.5V. Reverse breakdown voltages can be as low as 50V and as large as 1000V. Reverse saturation currents Is are around 1nA. Diode Characteristics The iD-vD relationship (excluding breakdown) can be written simply as: vD iD I s exp 1 nVT Note that for vD less than zero, the exponential term vanishes and the current iD is roughly equal to the saturation current. For vD greater than zero, the current increases exponentially. Diode Characteristics Recall that the i-v relationship for a resistor is given by Ohm’s Law: v=Ri If we plot this expression, we obtain i v The slope of the straight line is given by the resistance R R1 V 5Vdc V 1k V2 D2 D1N4148 i-v Characteristics 0 19m 16m 12m vD iD I s exp 1 nVT 8m 4m iD 0 -16V -14V I(D2) (7e-9)*(exp( -12V -10V -8V -6V -4V -2V 0V V(D2:1)/(.05107))-1) V(D2:1) Both the simulated current vs. voltage and the characteristic equation for the diode are plotted 2V i-v Characteristics In this exercise, you are asked to find the parameters for the equation vD iD I s exp 1 nVT Note that VT=25mV, so you need to find n and Is