Download Chapter 1 - UniMAP Portal

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts
no text concepts found
Transcript
CHAPTER 1: INTRODUCTION
Semiconductor Devices
©Syarifah Norfaezah 06/07
What is Semiconductors?
Semiconductors are materials which have a
conductivity between conductors (generally metals)
and nonconductors or insulators (such as most
ceramics).
Semiconductors can be pure elements, such as
silicon or germanium, or compounds such as
gallium arsenide or cadmium selenide
Ability to conduct electrical current, and they can be
regulated in the amount of their conductivity.
Si is most widely used – easily obtained.
Early developments semiconductor – 1600 to 1800.
©Syarifah Norfaezah 06/07
Semiconductor Era
1947 – First Transistor, AT & T Bells
Labs.
1952 – First Single Crystal Ge.
1954 – First Single Crystal Si.
1958 – First IC Device.
1961 – First IC Product, Fairchild
Camera
1971 – Intel Microprocessor
1975 – First Personal Computer.
1981 – IBM Personal Computer.
©Syarifah Norfaezah 06/07
Semiconductor Devices
Applied Physics, E & E Eng, Materials
Science.
Semiconductor Devices – foundation of
electronic industry.
Largest industry in the world - >> USD
trillion, since 1998.
Fundamental study of devices
(semiconductor physics) – to understanding
the advanced course in electronics.
©Syarifah Norfaezah 06/07
The underlying theory of photons
which made the invention of the
laser possible was first developed
by Albert Einstein in 1905
1954 the first microwave laser was
built by physicist Charles Townes.
The first optical laser was built in
1960 by physicist Theodore
Maiman
Tim Berners-Lee, a Physicist
from CERN Particle Physics Lab,
invented the World Wide Web in
1990
The first electronic digital
computer was built in the basement
of the physics department at Iowa
State University in 1939 by Physicist,
Professor Dr. John Atasanoff
©Syarifah Norfaezah 06/07
Semiconductor Devices (cont.)
USD billion
105
Gross world product (GWP)
104
electronics
automobile
103
semiconductor
steel
102
101
1980
1990
2000
Year
©Syarifah Norfaezah 06/07
2010
Semiconductor Devices (cont.)
1.1
M
Basic Devices Building Blocks
p – type S/C n – type S/C
S/C
(1) Metal – semiconductor interface
(2) p – n junction
oxide
S/C A
S/C B
M
(3) Heterojunction interface
S/C
(4) Metal – oxide semiconductor structure
©Syarifah Norfaezah 06/07
Semiconductor Devices (cont.)
1.
Metal-semiconductor interface
- intimate contact between a metal and a semiconductor
- first semiconductor device ever studied (1874).
-used as rectifying contact.
-MESFET.
2.
p-n junction
- form between p-type s/c and n-type s/c.
- key building block for most s/c devices.
-p-n junction theory – foundation of the physics of s/c.
-p-n-p bipolar transistor (1947).
-p-n-p-n called thyristor.
©Syarifah Norfaezah 06/07
Semiconductor Devices (cont.)
3.
Heterojunction interface
- interface between two dissimilar s/c, i.e GaAs + AlAs 
heterojunction.
-the key components for high-speed and photonic devices.
4.
Metal-Oxide-Semiconductor (MOS) structure
-a combination of metal-oxide interface and oxidesemiconductor interface.
- MOSFET (MOS field-effect transistor) – most important
device for advanced IC.
©Syarifah Norfaezah 06/07
Semiconductor Devices (cont.)
1.2
Major Semiconductor Devices
Year
Semiconductor Device
Inventor(s)
1874
Metal-semiconductor contact
Braun
1907
Light emitting diode (LED)
Round
1947
Bipolar transistor
Bardeen, Brattain,
Shockley
1949
p-n junction
Shockley
1954
Solar cell
Chapin, Fuller,
Pearson
1958
Tunnel diode
Leo Esaki
©Syarifah Norfaezah 06/07
Semiconductor Devices (cont.)
1.2
Major Semiconductor Devices (cont.)
Year
Semiconductor Device
Inventor(s)
1962
Laser
Hall et al.
1965
IMPATT diode
Johnston, DeLoach, Cohen
1966
MESFET
Mead
1967
Nonvolatile s/c memory
Kahng, Sze
1980
MODFET
Mimura et al.
2001
20nm MOSFET
Chau
©Syarifah Norfaezah 06/07
Semiconductor Technology
Year
Technology
Inventor(s)
1918
Czochralski crystal growth
Czochralski
1925
Bridgman crystal growth
Bridgman
1952
Diffusion
Pfann
1959
Hybrid IC
Kilby
1963
CMOS
Wanlass and Sah
1967
DRAM
Dennard
1969
MOCVD
Manasevit and Simpson
1971
Dry Etching
Irving, Lemons, and Bobos
1971
Microprocessor (4004)
Hoff et al.
1993
Copper interconnect
Paraszczak et al.
©Syarifah Norfaezah 06/07
Semiconductor Tech. (cont.)
As the complexity of the IC increased, we have move
from NMOS (n-channel MOSFET) to CMOS
(complementary MOSFET) technology – employs both
NMOS and PMOS.
CMOS technology is the dominant technology for
advanced ICs.
DRAM (dynamic random access memory) – the
memory contains one MOSFET and one chargestorage capacitor. (MOSFET serve as switch to charge
and discharge the capacitor).
©Syarifah Norfaezah 06/07
Technology Trends
The minimum length of IC has been reduced at rate about
13% per year.
Device miniaturization also reduces the energy used for each
switching operation. (energy has decreased over one million
times since 1959).
At the beginning of the modern technology era (1950 – 1970),
bipolar transistor was the technology driver.
1970-1990, DRAM and the microprocessor based on MOS
devices were the technology drivers (rapid growth of PC and
advanced tech. systems.
Since 1990, nonvolatile semiconductor memory has been the
tech. driver – because of the rapid growth of portable
electronic systems.
©Syarifah Norfaezah 06/07
Summary
Semiconductor Device field – new era of study – give a big
impact to our society and the global economy (largest industry
in the world – electronic industry).
Started from metal-semiconductor contact in 1874 – to the
fabrication of the ultrasmall 20nm MOSFET in 2001.
Semiconductor devices: 1947 (Bipolar Transistor)  1960
(MOSFET)  1967 (invention of nonvolatile semiconductor
memory).
More than 300, 000 papers have been published in
semiconductor-device physics field. Grand total may reach 1
million papers in the year 2012.
©Syarifah Norfaezah 06/07
Next Chapter: Chapter 2
Energy Bands & Carrier
Concentration in Thermal
Equilibrium
©Syarifah Norfaezah 06/07
“Try not to become a man of
success but rather to become a man
of value”
Albert Einstein
US (German-born) physicist
(1879 - 1955)
©Syarifah Norfaezah 06/07
“Education is the best provision for
the journey to old age”
Aristotle
Greek critic, philosopher, physicist, &
zoologist (384 BC - 322 BC)
©Syarifah Norfaezah 06/07