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WHI - Project Review 2002 - Halbleiterlabor (HLL) Projects at HLL Overview (list of main projects) CCD Development for ROSITA SDD Application (art analysis) DEPFET pixels for TESLA and XEUS Requirements for vertex detectors Technology development, design, simulation, prototyping Comparison to other vertex detector concepts Summary R. H. Richter - WHI Project Review Dec, 17th 2002 Projects at HLL (1) – High Energy Physics ATLAS SCT Strip detectors Requirements: Single sided strips (p in n), radiation hardness up to 3x10 14 neq/cm² Concept (p in n), design, prototyping: HLL Production: Hamamatsu, CiS (Erfurt) Status: Series production (finished by Dec 2002), Acceptance tests at HLL ATLAS Pixel sensors Requirements: Pixel size 50x450 µm², extremely radiation hard, 1x1015 neq/cm²!! Concept, technology and design: HLL Production: CiS (Erfurt), Tesla (Czech Republic)? Status: Start of series production, HLL (support) Linear Collider (TESLA): Thin and fast Active Pixel Sensors (see below) CAST Start of development at HLL: 2002 End: 2005 Aim: Search for solar axions by use of an X-ray telescope equipped with PN-CCD (see talk by R. Kotthaus) R. H. Richter - WHI Project Review Dec, 17th 2002 Projects at HLL (2) - Astrophysics XMM Launch of the satellite: 1999 Aim: Study of galactic and extragalactic X-ray sources Detector requirements: energy res., position res., time res. Instrument: PN-CCD ROSITA Start of the development: 2000 Scheduled Mission: 2007 - 2009 Aim: Orbit scan 0.5~keV to 15~keV Instrument: Optimized PN-CCD with frame store region XEUS Start of the development: 1996 Scheduled start: 2015 Aim: See XMM. But increased sensitivity by a factor 200, improved angular resolution, extended energy range Instrument: Optimized PN-CCD with frame store region OR Active Pixel Detector (DEPFET) R. H. Richter - WHI Project Review Dec, 17th 2002 ROSITA Modified Repetition of ABRIXAS Orbit scan: 0.5~keV to 15~keV To be installed on ISS Advanced PN-CCDs (separated image and storage areas) Prototypes produced in new laboratory R. H. Richter - WHI Project Review Dec, 17th 2002 CDD Development for ROSITA and XEUS Fast transfer of signals into the frame store Slow (low noise) read out from the frame store Out of time event probability: 0.2% (factor 30 lower than at XMM) Improvement of Charge Transfer Effciency (CTE) Charge transfer loss is by a factor of 13 smaller than that of the XMM-CCD No Titanium contamination in the new CCDs by using of HE-implantation instead of an epitaxial layer. Low energy resolution Al-K line 76eV FWHM C-K line 82eV FWHM Achieved by an improved entrance window (use of <100> instead of <111> crystal orientation) and by a better electronic noise 3.5 e- rms (XMM: 4.5 e-) Compact X-ray fluorescence spectrometer Manuscript: Faust I by Johann Wolfgang v. Goethe Investigated at Bundesanstalt für Materialprüfung From the composition of the ink they concluded that parts of Faust I were corrected at a time when Goethe already worked on Faust II. Röntec-Spectrometer equipped with a Silicon Drift Chamber R. H. Richter - WHI Project Review Dec, 17th 2002 Silicon detectors for LC vertex detector (TESLA) Collaboration with Unversity of Bonn (N. Wermes) WHI-HLL: Sensor Bonn: Read out and steering chips Synergy with XEUS Project (MPE) R. H. Richter - WHI Project Review Dec, 17th 2002 TESLA Vertexdetector Options: CCD MAPS HAPS DEPFET Total > 500 MPixel (bei 25x25 µm Pixelgröße) (read out speed in 50 MHz) R. H. Richter - WHI Project Review Dec, 17th 2002 Layer Module size No. Of modules I 13 x 100 mm 1x8 II 22 x 125 mm 2x8 III 22 x 125 mm 2 x 12 IV 22 x 125 mm 2 x 16 V 22 x 125 mm 2 x 20 Detector requirements for LC TESLA: • high position resolution (vertex reconstruction, momentum resolution) • low radiation length of inner layers • low power consumption (500MPixel + cooling additional material not allowed) • high readout out speed for background suppression • radiation tolerant • pixel size (20-30 µm)2 5(+)10/p sin3/2θ µm • sensor thickness d=50µm 0.1% X0 per layer ( layer I @ r=13mm ) • DEPFET: Pmean< 1W operation @ 300 K • 50MHz, read out speed occupancy < 1% • 100-200krad (5 years) 5 x 109 neq/cm2 R. H. Richter - WHI Project Review Dec, 17th 2002 Module concept with DEPFETs Auslesechips 520 x 4000 pixel DEPFET-Matrix (25 x 25µm Pixel) Steuerchips Auslesechips • Sensor area thinned down to 50 µm • Remaining frame for mechanical stability carrying readout and steering chips R. H. Richter - WHI Project Review Dec, 17th 2002 DEPFET-Principle Radiation source top gate n+ p+ p-channel internal gate + bulk p+ n+ -n - + -+ -+ - drain potential via axis top-gate / rear contact ~1mm ~300 mm totally depleted n--substrate potential minimum for electrons p+ rear contact V FET integrated on high ohmic n-bulk Advantages: of thethe charge at the position of collection Collection Amplification of electrons within internal gate => no transfer loss ModulationFull of the FET current by the signal charge! bulk sensitivity Non structured thin entrance window (backside) Very low input capacitance => very low noise R. H. Richter - WHI Project Review Dec, 17th 2002 Excellent noise values measured on single pixels Ka 6000 5000 # Zähler 4000 3000 2000 Escape - Peak Kb 1000 0 2 4 6 Energie [keV] 55Fe-spectra @ 300K ENC = 4.8 +/- 0.1 eR. H. Richter - WHI Project Review Dec, 17th 2002 BioScope - imaging of tracer-marked bio-medical samples (P. Klein and W. Neeser) Noise: ca. 70 ENC @ 300K Slow operation (old technology) Large arrays are impossible (JFET => VP variations) Large cell size Rectangular DEPFET pixel detector MOS transistor instead of JFET A pixel size of ca. 20 x 20 µm² is achievable using 3µm minimum feature size. R. H. Richter - WHI Project Review Dec, 17th 2002 DEPFET pixel matrix Low power consumption Fast random access to specific array regions - Read filled cells of a row - Clear the internal gates of the row completely - Read empty cells R. H. Richter - WHI Project Review Dec, 17th 2002 imaging spectroscopy purpose particle tracking 7.68 x 7.68 cm² 1024 x 1024 pixels detector format 1.3 x 10 cm² (x 8) 520 x 4000 pixels (x 8) 1 Mpix 2.1 Mpix (x8) 75 µm pixel size 25 µm 300 ... 500 µm thickness 50 µm 4 el. ENC noise ~ 100 el. ENC 1.2 msec 2.5 µsec readout time / detector / row 50 µsec 20 nsec DEPFET 6” -Technology Double poly / double aluminum process on high ohmic n- substrate along p-channel perpendicular to channel (with clear) R. H. Richter - WHI Project Review Dec, 17th 2002 Pixel prototype production (6“ wafer) for XEUS and LC (TESLA) Aim: Select design options for an optimized array operation (no charge loss, high gain, low noise, good clear operation) On base of these results => production of full size sensors Many test arrays - Circular and linear DEPFETS up to 128 x 128 pixels minimum pixel size about 30 x 30 µm² - variety of special test structures Production will be finished in spring R. H. Richter - WHI Project Review Dec, 17th 2002 Potential during collection - 3D Poisson equation (Poseidon) (50µm thick Si, NB=1013cm-3,VBack=-20V) Depth 10µm Depth Depth1µm 4µm 7µm External (internal) Gates Drain n+ clear contacts Sources Cell size 36 x 27 µm² R. H. Richter - WHI Project Review Dec, 17th 2002 Potential distribution during Reading Back contact Internal Gate 2D dynamic simulation along the channel ID adjusted to 100µA (W/L =18µm/5µm) Vinternal Gate ca. 3V Localized charge generation simulates a hit Source Drain R. H. Richter - WHI Project Review Dec, 17th 2002 DEPFET simulation – TeSCA (2D, time dependent) hit response to a generation of 1600 electron-hole pairs Current production status Pixel array section – Design with clockable clear gate 1 Pixel cell Drain Gate Status: - Poly I and II ok - Implantations (N-Side) ok - P-Side Processing started 8 lithographic steps ready To do: - P-Side diode / entrance window - Contact openings - Metal 1 FS/BS => Measurements - Metal 2 Clear 4 / 6 mask steps until März `03 / Juni `03 Clear gate Source R. H. Richter - WHI Project Review Dec, 17th 2002 Crossing polysilicon lines Problems with demolished polysilicon lines and bad polyI/polyII insulation Solved now R. H. Richter - WHI Project Review Dec, 17th 2002 Processing thin detectors - the Idea - R. H. Richter - WHI Project Review Dec, 17th 2002 Detector thinning – first results Thickness of detector region : 50µm of frame : 350µm Size: 8cm x 1cm Wafer bonding – MPI f. Festkörperstrukturphysik, Halle Wafer grinding – SICO GmbH, Jena Anisotropic etching – CiS gGmbH Erfurt, MPI Halbleiterlabor Munich R. H. Richter - WHI Project Review Dec, 17th 2002 1,5mm Read out chip – test submission (Marcel Trimpl - Bonn) - fast current read out - 4 mm TSMC 0,25 µm process (ca. 60 000 transistors) contains all important parts of the design Measurements: Very encouring results with nearly TESLA requirements ! R. H. Richter - WHI Project Review Dec, 17th 2002 Performance estimation of TESLA vertex detector candidates Resolution 5(+)10/p sin3/2θ µm CCD Similar as used in SLD HAPS 4.2(+)4.0/p sin3/2θ µm + ++ R&D 7µm (-) Hybrid APS MAPS Monolith.APS CMOS Microelectr. DEPFET Material budget ≤ 0.1% X0/l. 2µm (+++) But at 50MHz ? Like CCD ++ Read out Speed (50 MHz) O? R&D !! -- ++ + O? R&D Power consumpt. R&D !! + +? R&D R&D Radiation tolerance Ionisation, n R&D wellengineered product – enough Potential? ++ Back up solution +? Large area device Composition of dice ? +? ? -+? R&D ++ +? R. H. Richter - WHI Project Review Dec, 17th 2002 Remarks R&D Be patient for 6-12 months 9th EUROPEAN SYMPOSIUM ON SEMICONDUCTOR DETECTORS New Developments on Radiation Detectors took place at Schloss Elmau, June 23 - 27, 2002 R. H. Richter - WHI Project Review Dec, 17th 2002 Summary o o Our part in ATLAS is almost done Future projects: LC (TESLA), ROSITA, XEUS – encouraging CCD results o DEPFET is promising detector candidate for future HE and astrophysics experiments. Key features: low noise, full bulk sensitivity, no charge transfer loss, low power consumption, random access within an array A new DEPFET 6 inch technology (2 poly/ 2 aluminum) was developed for large arrays and high speed operation. DEPFET Prototype production has been started and will be finished in spring ’03. Read out electronic studies are very encouraging. A concept for merging the DEPFET technology with a thinning technology is proposed. o o o o Plans for 2003: Measurement and analysis of the prototype production New Drift Chamber and CCD submissions R. H. Richter - WHI Project Review Dec, 17th 2002