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Efficiency Evaluation of Thin-Film Hetero-Junction Solar-cells Presented By :Gaurav Jain www.powerpointpresentationon.blogspot.com Introduction • •General introduction •History •Generation Efficiency law and loss mechanism • •Planck’s law •Loss a)Optical b)Electrical -Ohmic -Recombination High Efficiency Cells •Monocrystalline si •Polycrystaline si a)Multiple junction solar cell b) Thin film solar cells * Applications & Implementations Photovoltaic Effect •Introduction •Procedure Theory of Solar Cells •Photo generation of charge carriers •Charge carrier separation •The p-n junction •Connection to an external load Equivalent circuit of solar cell • • Effect of physical size • Cell temperature V-I curves • •Series resistance •Shunt resistance V-I curve Contd…. • •Reverse saturation current •Ideality factor Efficiency evaluation of solar cell by Formula explanation Materials research society of solar cell 1. Understanding of Passivation Mechanism Heterojunction c-Si Solar Cells 2. Efficient Silicon Heterojunction Solar Cell On P-Wafer By HotWire Chemical Vapor Deposition 3. Silicide Mediated Grown 3-Dimensional Crystalline Si Films and Schottky Photodiodes 4.Substrate Engineering for High Efficiency Thin Film Solar Cells Solar cell part-II Presented by:- Rohit Dadhich Cross section of solar cells Spectral distribution of radiation intensity Solar cell efficiency factor •Energy conversion efficiency •Thermodynamic efficiency limit •Quantum efficiency •Maximum power point •Fill factor Crystalline silicon solar cell-I •introduction Crystalline silicon solar cell-II •Silicon cell development Crystalline silicon solar cell-III •Opportunities for improvement •CZ wafers •Change in crucible material •Bifacial cell Solar cell technology innovation center at MTA MFA-I •Introduction •Watts peak Solar cell technology innovation center at MTA MFA-II •Integrated vaccum system •Material used First junction(ZnO based diode) •1.introduction •2.structure •3.procedure First junction(ZnO based diode) •Reflection •Reflection coefficient of antireflection film •Maximal generated voltage •Maximal current First junction(ZnO based diode) •Im=0.1 mA •Vm=0.63 V •Pm = 0.063mW •Conversion efficiency =2.1% Solar cell part-III Presented by:- satyavrat Shukla Second ,Third and Fourth junction Introduction Light absorbing material-I •Bulk •Crystalline silicon Light absorbing material-II •Thin film -cadmium telluride solar cell -copper indium selenide -gallium arsenide multi junction -light absorbing dyes -organic polymer solar cell -silicon thin films(nano crystalline solar cell) Realization and characterization of ZnO/n-si solar cell by spray pyrolysis-I • Introduction • Experiment 1)The inter faciallayer formation 2)The top window layer deposition Realization and characterization of ZnO/n-si solar cell by spray pyrolysis-II Result:- 1)As –deposited ZnO/nSi solar cell 2)Annealed ZnO/Sio2/nSi solar cell 3)ITO/ZnO/n-si solar cell Realization and characterization of ZnO/n-si solar cell by spray pyrolysis-III 4) The effect of oxidation time Realization and characterization of ZnO/n-si solar cell by spray pyrolysis-iv Current research on materials & devices •Silicon processing •Thin film processing •Metamorphic multijunction solar cell •Polymers processing •Transparent conductors •Photovoltaic thermal hybrid Some important points of solar cell •Concentrating photovoltaic •Silicon solar cell device manufacture •Lifespan •Costs conclusion • Shown above approach is based on the rouge calculation generation current including approximate estimation of the integral photons flow absorption coefficient and reflection coefficient of the applied semiconductor material the methodic was approved for evaluation of hetero junction system based on the ZnO-ZnSe-Si-Ge structure . Rouge estimation of electrical parameters of presented multi-junction semiconductor chip shown follows values: open circuit voltage=2 volt photo current= 40 mA maximum voltage=1.74 volt efficiency=45% Thank you