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Transcript
Open Project:
High Frequency Power Converters for Utility Applications
In the modern power electronics converter applications, the demands for reaching
higher efficiency and higher power density are aligned with higher switching
frequency over range of 1 MHz. Compared to silicon-based devices, GaN and SiC
power chips operate at higher voltages, frequencies and temperatures, helping to
eliminate up to 90% of the power losses in electricity conversion. Wide bandgap
refers to higher voltage electronic band gaps in devices, which are larger than 1
electronvolt (eV). Theoretical limitation of silicon-based power converters in one
side and the unique physical properties of GaN to operate with high power density
in low voltage applications on the other side create a new era opened for high
efficient converter applications.
Objectives:
The project deals with design, analysis and implementation of open-loop H-Bridge
inverter with utilization of GaN transistors at 5MHz switching frequency for
300Watt output. The work includes:
 Simulation of H-Bridge inverter with GaN transistors in open-loop structure
 Design and Implementation of H-Bridge in to the Printed Circuit Board
 Successfully testing the prototype at 5 MHz switching frequency and 20A
current.
Requirements: A prior knowledge of power electronics and acquaintance with
ORCAD (PSPICE/PCB layout) is desirable but not strictly mandatory. This work is
suitable for students are belonging to the discipline of Electrical and computer
Engineering.
Project Outcome: By performin this project the student can gain knowledge about
challenges of designing H-Bridge inverter with GaN technologies. She/he can also
learn hardware part as well as software part, unique experimental experiences and
working in a well-equipped lab are other advantages of this project.
The start time was 15th April 2015
Supervised by: Dr. Babak Parkhideh, Assistant Professor of ECE
Project Mentor: Mehrdad Biglarbegian, PhD student
For more information please contact: [email protected]