Download 2N2904, 2N2905, 2N2906, 2N2907, GENERAL PURPOSE

2N2904/2N2905
2N2906/2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2904, 2N2905, 2N2906 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO39 (for 2N2904, 2N2905) and in Jedec TO-18 (for
2N2906 and 2N2907) metal cases. They are designed for high-speed saturated switching and general purpose applications.
2N2904/2N2905 approved to CECC 50002102, 2N2906/2N2907 approved to CECC
50002-103 available on request.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-base Voltage (I E = 0)
– 60
V
V CEO
Collector-emitter Voltage (I B = 0)
– 40
V
V EBO
Emitter-base Voltage (I C = 0)
IC
Pt o t
T s t g, T j
October 1988
– 5
V
– 600
mA
2 N29 05
2 N29 07
0.6
0.4
W
W
2 N29 05
2 N29 07
3
1.8
W
W
– 65 to 200
°C
Collector Current
Total Power Dissipation at T amb ≤ 25 °C
for 2N2 90 4 and
for 2N2 90 6 and
at T c as e ≤ 25 °C
for 2N2 90 4 and
for 2N2 90 6 and
Storage and Junction Temperature
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2N2904-2N2905-2N2906-2N2907
THERMAL DATA
R t h j- cas e
R t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2 N29 04
2 N29 05
2N 290 6
2N 290 7
58.3 °C/W
292 °C/W
97.3 °C/W
437.5 °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
– 20
– 20
nA
µA
I CBO
Collector Cutoff Current
(I E = 0)
V CB = – 50 V
V CB = – 50 V
I CE X
Collector Cutoff Current
(V BE = 0.5 V)
V CE = – 30 V
– 50
I BEX
Base Cutoff Current
(V BE = 0.5 V)
V CE = – 30 V
– 50
Colllector-base Breakdown
Voltage (I E = 0)
I C = – 10 µA
– 60
V (BR)CE O *
Collector-emitter Breakdown
Voltage (I B = 0)
I C = – 10 mA
– 40
V ( BR)
Emittter-base Breakdown
Voltage (I C = 0)
I E = – 10 µA
–5
V ( BR)
CBO
EBO
T am b = 150 °C
nA
nA
V
V
V
V CE
(s at )*
Collector-emitter Saturation
Voltage
I C = – 150 mA
I C = – 500 mA
I B = – 15 mA
I B = – 50 mA
– 0.4
– 1.6
V
V
VB E
(s at )*
Base-emitter Saturation
Voltage
I C = – 150 mA
I C = – 500 mA
I B = – 16 mA
I B = – 50 mA
– 1.3
– 2.6
V
V
DC Current Gain
for 2N 290 4 and 2N2 90 6
V CE = – 10
I C = – 0.1 mA
I C = – 1 mA
V CE = – 10
I C = – 10 mA
V CE = – 10
I C = – 150 mA V CE = – 10
I C = – 500 mA V CE = – 10
V
V
V
V
V
20
25
35
40
20
for 2N 290 5 and 2N 290 7
V CE = – 10
I C = – 0.1 mA
I C = – 1 mA
V CE = – 10
I C = – 10 mA
V CE = – 10
I C = – 150 mA V CE = – 10
I C = – 500 mA V CE = – 10
V
V
V
V
V
35
50
75
100
30
200
h F E*
hFE *
fT
DC Current Gain
300
MHz
Transition Frequency
I C = – 50 mA
f = 100 MHz
V CE = – 20 V
C EBO
Emitter-base Capacitance
IC = 0
f = 1 MHz
V EB = – 2 V
30
C CBO
Collector-base Capacitance
IE = 0
f = 1 MHz
V CB = – 10 V
8
td
Delay Time
I C = – 150 mA
I B1 = – 15 mA
V CC = – 30 V
10
tr
Rise Time
I C = – 150 mA
I B1 = – 15 mA
V CC = – 30 V
40
ts
Storage Time
I C = – 150 mA V CC = – 6 V
I B1 = – I B2 = – 15 mA
80
tf
Fall Time
I C = – 150 mA V CC = – 6 V
I B1 = – I B2 = – 15 mA
30
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
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120
pF
pF
ns
ns
ns
ns
2N2904-2N2905-2N2906-2N2907
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
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2N2904-2N2905-2N2906-2N2907
TO39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
A
G
I
E
F
H
B
L
P008B
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2N2904-2N2905-2N2906-2N2907
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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written approval of SGS-THOMSON Microelectonics.
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