Download BC817-16

BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
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NPN Silicon
COLLECTOR
3
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
•
1
BASE
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
3
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
VCBO
50
V
Emitter − Base Voltage
VEBO
5.0
V
IC
500
mAdc
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
MARKING DIAGRAM
225
1.8
mW
mW/°C
556
°C/W
Collector Current − Continuous
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
1
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
November, 2011 − Rev. 12
6x
M
G
= Device Code
x = A, B, or C
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
6x M G
G
1
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC817−16LT1/D
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = 10 mA)
V(BR)CES
50
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
−
−
−
−
100
5.0
nA
mA
100
160
250
40
−
−
−
−
250
400
600
−
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
hFE
BC817−16, SBC817−16
BC817−25, SBC817−25
BC817−40, SBC817−40
−
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
V
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
ORDERING INFORMATION
Device
Specific Marking
Package
6A
SOT−23
(Pb−Free)
6B
SOT−23
(Pb−Free)
3000 / Tape & Reel
BC817−16LT1G
BC817−16LT3G
SBC817−16LT3
BC817−25LT1G
SBC817−25LT1G
BC817−25LT3G
10,000 / Tape & Reel
BC817−40LT1G
BC817−40LT3G
10,000 / Tape & Reel
3000 / Tape & Reel
SBC817−25LT3G
SBC817−40LT1G
Shipping†
3000 / Tape & Reel
SOT−23
(Pb−Free)
6C
10,000 / Tape & Reel
SBC817−40LT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
300
1
hFE, DC CURRENT GAIN
200
25°C
−55°C
100
0
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
150°C
0.001
0.01
0.01
0.1
1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
−55°C
IC/IB = 10
0.9
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
−55°C
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
1
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 5. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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4
100
1000
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L
500
1
hFE, DC CURRENT GAIN
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
400
300
25°C
200
−55°C
100
0
0.001
0.01
0.001
0.01
0.1
1
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
−55°C
IC, COLLECTOR CURRENT (A)
0.9
0.2
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
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5
1000
1
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 13. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitances
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100
1000
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
1
700
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
VCE = 1 V
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.001
0.01
0.1
1
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.01
IC, COLLECTOR CURRENT (A)
0.9
0.2
−55°C
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.1
0.001
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
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1000
1
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 21. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 22. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 23. Capacitances
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8
100
1000
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L,
SBC817−40L
1
1 ms
10 ms
100 ms
1s
Thermal Limit
IC (A)
0.1
0.01
Single Pulse Test @ TA = 25°C
0.001
0.01
0.1
1
VCE (Vdc)
10
Figure 24. Safe Operating Area
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9
100
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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BC817−16LT1/D
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1.
Product overview
Type number
Package
PNP complement
NXP
JEITA
BC817
SOT23
-
BC807
BC817W
SOT323
SC-70
BC807W
BC337[1]
SOT54 (TO-92)
SC-43A
BC327
[1]
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
„ High current
„ Low voltage
1.3 Applications
„ General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base;
IC = 10 mA
-
-
45
V
IC
collector current (DC)
-
-
500
mA
ICM
peak collector current
-
-
1
A
-
-
-
hFE
DC current gain
BC817; BC817W; BC337
[1]
IC = 100 mA;
VCE = 1 V
[1]
100
-
600
BC817-16; BC817-16W; BC337-16
100
-
250
BC817-25; BC817-25W; BC337-25
160
-
400
BC817-40; BC817-40W; BC337-40
250
-
600
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Symbol
SOT23
1
base
2
emitter
3
collector
3
3
1
1
2
2
sym021
SOT323
1
base
2
emitter
3
collector
3
3
1
2
sym021
1
2
sot323_so
SOT54
1
emitter
2
base
3
collector
3
1
2
3
2
1
001aab347
sym026
SOT54A
1
emitter
2
base
3
collector
3
1
2
2
3
1
001aab348
sym026
SOT54 variant
1
emitter
2
base
3
collector
3
1
2
3
001aab447
2
1
sym026
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
2 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Type number[1]
Package
Name
Description
Version
BC817
-
plastic surface mounted package; 3 leads
SOT23
BC817W
SC-70
plastic surface mounted package; 3 leads
SOT323
BC337[2]
SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
[1]
Valid for all available selection groups.
[2]
Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BC817
6D*
BC817-16
6A*
BC817-25
6B*
BC817-40
6C*
BC817W
6D*
BC817-16W
6A*
BC817-25W
6B*
BC817-40W
6C*
BC337
C337
BC337-16
C33716
BC337-25
C33725
BC337-40
C33740
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
3 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
VCEO
collector-base voltage
open emitter
-
50
V
collector-emitter voltage
open base;
IC = 10 mA
-
45
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current (DC)
-
500
mA
ICM
peak collector current
-
1
A
IBM
peak base current
-
200
mA
Ptot
total power dissipation
BC817
Tamb ≤ 25 °C
[1][2]
-
250
mW
BC817W
Tamb ≤ 25 °C
[1][2]
-
200
mW
BC337
Tamb ≤ 25 °C
[1][2]
-
625
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
[1]
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2]
Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
Typ
Max
Unit
BC817
Tamb ≤ 25 °C
[1][2]
-
-
500
K/W
BC817W
Tamb ≤ 25 °C
[1][2]
-
-
625
K/W
BC337
Tamb ≤ 25 °C
[1][2]
-
-
200
K/W
[1]
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2]
Valid for all available selection groups.
BC817_BC817W_BC337_6
Product data sheet
Min
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
4 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
ICBO
collector-base cut-off current
IEBO
Min
Typ
Max
Unit
IE = 0 A; VCB = 20 V
-
-
100
nA
IE = 0 A; VCB = 20 V;
Tj = 150 °C
-
-
5
μA
-
-
100
nA
BC817; BC817W; BC337
100
-
600
BC817-16; BC817-16W;
BC337-16
100
-
250
BC817-25; BC817-25W;
BC337-25
160
-
400
BC817-40; BC817-40W;
BC337-40
250
-
600
emitter-base cut-off current
DC current gain
hFE
Conditions
IC = 0 A; VEB = 5 V
IC = 100 mA; VCE = 1 V
[1]
hFE
DC current gain
IC = 500 mA; VCE = 1 V
[1]
40
-
-
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA
[1]
-
-
700
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V
[2]
-
-
1.2
V
Cc
collector capacitance
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
-
3
-
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
-
-
MHz
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2]
VBE decreases by approximately 2 mV/K with increasing temperature.
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
5 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa131
400
006aaa132
600
hFE
hFE
(1)
300
(1)
400
200
(2)
(2)
200
(3)
(3)
100
0
10−1
1
102
10
0
10−1
103
1
10
I C (mA)
103
I C (mA)
VCE = 1 V
VCE = 1 V
(1) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Fig 1.
102
Selection -16: DC current gain as a function of
collector current; typical values
Fig 2.
Selection -25: DC current gain as a function of
collector current; typical values
006aaa133
800
hFE
600
(1)
400
(2)
(3)
200
0
10−1
1
10
102
103
I C (mA)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
Selection -40: DC current gain as a function of collector current; typical values
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
6 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa134
10
006aaa135
10
VBEsat
(V)
VBEsat
(V)
1
1
(1)
10−1
10−1
(1)
(2)
(2)
(3)
(3)
1
10
102
10−1
10−1
103
1
I C (mA)
102
103
I C (mA)
IC/IB = 10
IC/IB = 10
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
Fig 4.
10
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
Fig 5.
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
006aaa136
10
VBEsat
(V)
1
(1)
(2)
(3)
10−1
10−1
1
10
102
103
I C (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6.
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
7 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa137
1
006aaa138
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(1)
(2)
10−2
(3)
(1) (2)
(3)
10−2
10−1
1
10
102
10−3
10−1
103
1
I C (mA)
102
103
I C (mA)
IC/IB = 10
IC/IB = 10
(1) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Fig 7.
10
Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8.
Selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa139
1
VCEsat
(V)
10−1
(1)
(2)
10−2
10−3
10−1
(3)
1
10
102
103
I C (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9.
Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
8 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa140
1.2
(4)
(5)
IC
(A)
(2)
(3)
(1)
006aaa141
1.2
(6)
IC
(A)
0.8
(4)
(5)
(2)
(3)
(1)
0.8
(6)
(7)
(7)
(8)
(8)
(9)
(9)
0.4
0.4
(10)
(10)
0
0
0
1
2
3
4
5
0
1
VCE (V)
Tamb = 25 °C
3
4
5
VCE (V)
Tamb = 25 °C
(1) IB = 16.0 mA
(1) IB = 13.0 mA
(2) IB = 14.4 mA
(2) IB = 11.7 mA
(3) IB = 12.8 mA
(3) IB = 10.4 mA
(4) IB = 11.2 mA
(4) IB = 9.1 mA
(5) IB = 9.6 mA
(5) IB = 7.8 mA
(6) IB = 8.0 mA
(6) IB = 6.5 mA
(7) IB = 6.4 mA
(7) IB = 5.2 mA
(8) IB = 4.8 mA
(8) IB = 3.9 mA
(9) IB = 3.2 mA
(9) IB = 2.6 mA
(10) IB = 1.6 mA
(10) IB = 1.3 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
BC817_BC817W_BC337_6
Product data sheet
2
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
9 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa142
1.2
(6)
(4)
(5)
(2)
(3)
(1)
IC
(A)
0.8
(7)
(8)
(9)
0.4
(10)
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
(1) IB = 12.0 mA
(2) IB = 10.8 mA
(3) IB = 9.6 mA
(4) IB = 8.4 mA
(5) IB = 7.2 mA
(6) IB = 6.0 mA
(7) IB = 4.8 mA
(8) IB = 3.6 mA
(9) IB = 2.4 mA
(10) IB = 1.2 mA
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
10 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 13. Package outline SOT23 (TO-236AB)
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
11 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT323
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 14. Package outline SOT323 (SC-70)
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
12 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
Fig 15. Package outline SOT54 (SC-43A/TO-92)
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
13 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
SOT54A
c
E
A
L
d
L2
b
1
e1
e
D
2
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
5.08
2.54
14.5
12.7
3
max.
L2
3
2
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
97-05-13
04-06-28
SOT54A
Fig 16. Package outline SOT54A
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
14 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
e1
L2
E
d
A
L
b
1
e1
2
e
D
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
max
L2
max
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
05-01-10
SOT54 variant
Fig 17. Package outline SOT54 variant
BC817_BC817W_BC337_6
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 06 — 17 November 2009
15 of 19
BC817/BC818
tm
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
3
• Complement to BC807/ BC808
2
1
Absolute Maximum Ratings*
Symbol
VCBO
VCEO
1. Base 2. Emitter 3. Collector
Ta = 25°C unless otherwise noted
Parameter
SOT-23
Value
Units
: BC817
: BC818
50
30
V
V
: BC817
: BC818
45
25
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
5
IC
Collector Current (DC)
800
mA
PC
Collector Power Dissipation
310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
: BC817
: BC818
IC=10mA, IB=0
Collector-Emitter Breakdown Voltage
: BC817
: BC818
IC=0.1mA, VBE=0
BVEBO
Emitter-Base Breakdown Voltage
IE=0.1mA, IC=0
ICES
Collector Cut-off Current
VCE=25V, VBE=0
100
nA
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
100
nA
hFE1
hFE2
DC Current Gain
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
VBE (on)
Base-Emitter On Voltage
VCE=1V, IC=300mA
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA
f=50MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
BVCES
45
25
V
V
50
30
V
V
5
V
100
60
630
0.7
1.2
100
V
V
MHz
12
pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
BC817/BC818 Rev. B
1
www.fairchildsemi.com
BC817/BC818 NPN Epitaxial Silicon Transistor
November 2006
Classification
16
25
40
hFE1
110 ~ 250
160 ~ 400
250 ~ 630
hFE2
60~
100~
170~
Ordering Information
Device(note1)
Device Marking
Package
Packing Method
Qty(pcs)
Pin Difinitions
BC81716MTF
BC81725MTF
8FA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
8FB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81740MTF
8FC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81816MTF
8GA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81825MTF
8GB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81840MTF
8GC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
Note1 :
Affix “-16,-25,-40” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2
BC817/BC818 Rev. B
www.fairchildsemi.com
BC817/BC818 NPN Epitaxial Silicon Transistor
hFE Classification
BC817/BC818 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
1.0
600
hfe, Current Gain
500
Vbe(on), Base-Emitter On Voltage,[V]
BC81725MTF
Vce=1V
400
300
200
o
-25 C
o
25 C
o
o
125 C
75 C
100
VCE = 1V
0.9
o
0.8
125 C
o
75 C
o
25 C
0.7
0.6
0.5
0.4
0.3
0
1
10
100
1
1000
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 1. DC current Gain
Figure 2. Base-Emitter On Voltage
1.2
Ic=10Ib
Ic=10Ib
o
Vbe(sat), Saturation Voltage,[V]
Vce(sat), Saturation Voltage,[V]
0.4
125 C
0.3
o
75 C
o
25 C
0.2
o
-25 C
0.1
0.0
10
100
1.0
o
o
0.8
o
125 C
0.6
o
75 C
0.4
10
1000
25 C
-25 C
100
1000
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
PD - Power Dissipation (W)
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
O
Temperature, [ C]
Figure 5. Power Dissipation vs Ambient Temperature
3
BC817/BC818 Rev. B
www.fairchildsemi.com
BC817/BC818 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
4
BC817/BC818 Rev. B
www.fairchildsemi.com