Download BC160, 161

BC160
BC161
GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC160, and BC161 are silicon planar epitaxial
PNP transistors in TO-39 metal case.They are particurlarly designed for audio amplifiers and switching
applications up to 1A. The complementary NPN
types are the BC140 and BC141.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BC160
BC161
Unit
V CBO
Collector-base Voltage (I E = 0)
– 40
– 60
V
V CEO
Collector-emitter Voltage (I B = 0)
– 40
– 60
V
V EBO
Emitter-base Voltage (I C = 0)
–5
V
IC
Collector Current
–1
A
IB
Base Current
– 0.1
A
Pt o t
Total Power Dissipation at T amb ≤ 45 °C
at T c as e ≤ 45 °C
0.65
3.7
W
W
T st g
Storage Temperature
– 55 to 175
°C
Tj
Junction Temperature
175
°C
January 1989
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BC160-BC161
THERMAL DATA
R th j-c ase
R th j -amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
35
200
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
I CE S
Parameter
Collector Cutoff
Current (I E = 0)
Test Conditions
V CE S
V CE S
V CE S
T amb
V CE S
T amb
= 40 V
= 60 V
= 40 V
= 150 °C
= 60 V
= 150 °C
Min.
Typ.
Max.
Unit
for BC160
for BC161
for BC160
– 100
– 100
– 100
nA
nA
µA
for BC161
– 100
µA
Collector-base
Breakdown Voltage
(I E = 0)
I C = – 100 µA
Collector-emitter
Breakdown Voltage
(I B = 0)
I C = – 10 mA
V (B R)E BO
Emitter-base
Breakdown Voltage
(I C = 0)
I E = – 100 µA
V CE( sat )*
Collector-emitter
Saturation Voltage
I C = – 0.1 A
I C = – 0.5 A
IC = – 1 A
I B = – 10 mA
I B = – 50 mA
I B = – 0.1 A
– 0.1
– 0.35
– 0.6
–1
V
V
V
VB E *
Base-emitter Voltage
IC = – 1 A
V CE = – 1 V
– 1
– 1.7
V
h F E*
DC Current Gain
V CE = – 1 V
I C = – 100 µA
for BC160-161
for BC160-161 Gr.
for BC160-161 Gr.
for BC160-161 Gr.
V CE = – 1 V
I C = – 100 mA
for BC160-161
for BC160-161 Gr.
for BC160-161 Gr.
for BC160-161 Gr.
V (B R)CBO
V (BR)CE O *
h F E*
DC Current Gain
IC = – 1 A
for
for
for
for
fT
– 40
– 60
V
V
for BC160
for BC161
– 40
– 60
V
V
–5
V
110
46
80
120
6
10
16
6
10
16
40
40
63
100
V CE = – 1 V
BC160-161
BC160-161 Gr. 6
BC160-161 Gr. 10
BC160-161 Gr. 16
140
63
100
160
250
100
160
250
26
15
20
30
Transition Frequency
I C = – 50 mA
V CE = – 10 V
Collector-base
Capacitance
IE = 0
f = 1 MHz
V CB = – 20 V
C EBO
Emitter-base
Capacitance
V EB = – 0.5 V
f = 1 MHz
to n
Turn-on Time
I C = – 100 mA
I B1 = – 5 mA
500
I C = – 100 mA
I B1 = I B2 = – 5mA
650
C CBO
t off
Turn-off Time
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
2/5
for BC160
for BC161
50
MHz
pF
15
30
180
pF
ns
ns
BC160-BC161
Collector-emitter Saturation Voltage.
Base-emitter Voltage.
DC Current Gain.
Transition Frequency.
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BC160-BC161
TO39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
A
G
I
E
F
H
B
L
P008B
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BC160-BC161
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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