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IRFP450

N - CHANNEL 500V - 0.33Ω - 14A - TO-247
PowerMESH MOSFET
TYPE
IRFP450
■
■
■
■
■
V DSS
R DS(on)
ID
500 V
< 0.4 Ω
14 A
TYPICAL RDS(on) = 0.33 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
TO-247
APPLICATIONS
■
HIGH CURRENT SWITCHING
■
UNINTERRUPTIBLE POWER SUPPLY (UPS)
■
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
Drain-source Voltage (V GS = 0)
500
V
V DGR
Drain- gate Voltage (R GS = 20 kΩ)
500
V
V GS
Gate-source Voltage
V DS
Parameter
± 20
V
ID
Drain Current (continuous) at Tc = 25 C
14
A
ID
Drain Current (continuous) at Tc = 100 C
o
8.7
A
Drain Current (pulsed)
56
A
IDM (•)
P t ot
dv/dt( 1 )
T stg
Tj
o
o
Total Dissipation at Tc = 25 C
190
W
Derating F actor
1.5
W/ C
3.5
V/ ns
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
August 1998
o
-65 to 150
o
C
150
o
C
(1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
IRFP450
THERMAL DATA
R t hj-ca se
Rthj -amb
R thc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
0.66
30
0.1
300
C/W
oC/W
o
C/W
o
C
Max Valu e
Unit
14
A
800
mJ
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, I D = IAR , VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
V DS = Max Rating
Zero G ate Voltage
Drain Current (VGS = 0) V DS = Max Rating
Gate-body Leakage
Current (V DS = 0)
Min.
Typ .
Max.
500
V GS = 0
Un it
V
o
T c = 125 C
V GS = ± 20 V
1
50
µA
µA
± 100
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS( on)
Static Drain-source On V GS = 10V
Resistance
ID(o n)
V DS = VGS
Min.
Typ .
Max.
Un it
2
3
4
V
0.33
0.4
Ω
ID = 8.4 A
14
On State Drain Current V DS > I D(on) x R DS(on) max
V GS = 10 V
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/8
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 8.4 A
VGS = 0
Min.
Typ .
Max.
Un it
9.3
13
S
2600
330
40
pF
pF
pF
IRFP450
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
t d(on)
tr
Turn-on Time
Rise Time
V DD = 250 V I D = 7A
VGS = 10 V
R G = 4.7 Ω
(see test circuit, figure 1)
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
I D = 14A
Min.
V GS = 10 V
Typ .
Max.
Un it
24
14
ns
ns
75
13.5
27
nC
nC
nC
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
Min.
Typ .
Max.
15
25
35
V DD = 400 V I D = 14 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 3)
Un it
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 14 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 14 A di/dt = 100 A/µs
o
T j = 150 C
V DD = 100 V
(see test circuit, figure 3)
t rr
Q rr
I RRM
Min.
Typ .
V GS = 0
Max.
Un it
14
56
A
A
1.4
V
680
ns
9
µC
26
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
IRFP450
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
IRFP450
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
IRFP450
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
IRFP450
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
7/8
IRFP450
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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