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SMS123
0.17A, 100V, RDS(ON) 6Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-23
DESCRIPTIONS
The SMS123 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
A
L
3
3
C B
Top View
1
1
2
K
E
2
MECHANICAL DATA




D
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
F
REF.
A
B
C
D
E
F
APPLICATION


G
DC-DC converter circuit
Load Switch
Millimeter
Min.
Max.
2.70
3.10
2.10
2.65
1.20
1.40
0.89
1.17
1.78
2.04
0.30
0.50
H
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.35
0.65
0.08
0.20
0.6 REF.
0.95 BSC.
MARKING
B123
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
VDS
100
V
VGS
±20
V
ID
0.17
A
Pulsed Drain Current(tp=10μs)
IDM
0.68
A
Continuous Source-Drain Diode Current
IS
0.17
A
PD
0.35
W
RθJA
357
°C / W
TL
260
°C
TJ, TSTG
150, -55~150
°C
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
1
Power Dissipation
Thermal Resistance from Junction to Ambient
1
Lead Temperature for Soldering Purposes
(1/8’’ from case for 10s)
Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
06-Jan-2016 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
SMS123
0.17A, 100V, RDS(ON) 6Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Threshold Voltage
2
Drain-Source On Resistance 2
Forward Transconductance
2
100
-
-
V
VGS=0V, ID=250μA
-
-
1
μA
VDS=100V, VGS=0V
-
-
10
nA
VDS=20V, VGS=0V
IGSS
-
-
±50
nA
VDS=0V, VGS= ±20V
VGS(TH)
1
-
2.8
V
VDS=VGS, ID=250μA
-
-
6
-
-
10
80
-
-
mS
VDS=10V, ID= 0.17A
1.3
V
IS=340mA, VGS=0V
pF
VDS=25V,
VGS=0V,
f=1MHz
nC
VDS=10V,
VGS=10V,
ID=0.22A
nS
VDD=30V,
I D=2.8A,
VGS=10V,
RGEN=50Ω
RDS(ON)
gFS
Ω
VGS=10V, ID=0.17A
VGS=4.5V, ID=0.17A
Body-Drain Diode Ratings
Diode Forward On–Voltage
VSD
-
-
Dynamic Characteristics
Input Capacitance
CISS
-
29
Output Capacitance
COSS
-
10
Reverse Transfer Capacitance
CRSS
-
2
Switching Characteristics
Total Gate Charge
4
3, 4
QG(TOT)
-
1.4
-
Gate-to-Source Charge
QGS
-
0.15
-
Gate-to-Drain Charge
QGD
-
0.2
-
Td(ON)
-
8
-
Tr
-
8
-
Td(OFF)
-
13
-
Tf
-
16
-
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes:
1. Surface mounted on FR4 Board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle≦2％
3. Switching characteristics are independent of operating junction temperature.
4. Guaranteed by design, not subject to producing.
http://www.SeCoSGmbH.com/
06-Jan-2016 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
SMS123
Elektronische Bauelemente
0.17A, 100V, RDS(ON) 6Ω
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
06-Jan-2016 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3