Download TIP2955 - Physical Process Modeling

TIP2955
PNP SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK
●
JANUARY 1972 - REVISED MARCH 1997
Designed for Complementary Use with the
TIP3055 Series
●
90 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
SYMBOL
VALUE
Collector-base voltage (IE = 0)
RATING
VCBO
-100
UNIT
V
Collector-emitter voltage (IB = 0) (see Note 1)
VCER
-70
V
Emitter-base voltage
V
V EBO
-7
Continuous collector current
IC
-15
A
Continuous base current
IB
-7
A
W
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
90
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
½LIC 2
62.5
mJ
°C
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies when the base-emitter resistance RBE = 100 Ω.
Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -10 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V (BR)CEO
ICEO
ICEV
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
TEST CONDITIONS
Collector-emitter
breakdown voltage
Collector cut-off
current
Voltage between
base and emitter
Emitter cut-off
current
IC = -30 mA
IB = 0
VCE = -30 V
IB = 0
VCE = -100 V
VEB =
-7 V
(see Note 5)
mA
IC = 0
-5
mA
-4 V
IC =
-4 V
IC = -10 A
-4 A
Collector-emitter
IB =
-0.4 A
IC =
saturation voltage
IB =
-3.3 A
IC = -10 A
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
-5
VCE =
-4 V
-60
UNIT
VBE = 1.5 V
V CE =
VCE =
MAX
mA
transfer ratio
voltage
TYP
-0.7
Forward current
Base-emitter
MIN
IC =
(see Notes 5 and 6)
-4 A
20
70
5
-1.1
(see Notes 5 and 6)
-4 A
-3
(see Notes 5 and 6)
VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
V
-1.8
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.39
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
TYP
ton
Turn-on time
IC = -6 A
IB(on) = -0.6 A
IB(off) = 0.6 A
0.4
µs
toff
Turn-off time
V BE(off) = 4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.7
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS638AD
1000
hFE - DC Current Gain
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
-0·01
-0·1
-1·0
-10
IC - Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS638AB
t p = 300 µs,
d = 0.1 = 10%
t p = 1 ms,
d = 0.1 = 10%
t p = 10 ms,
d = 0.1 = 10%
DC Operation
-10
-1·0
-0·1
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 2.
PRODUCT
INFORMATION
3
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS637AB
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 3.
PRODUCT
4
INFORMATION
125
150
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
MDXXAW
INFORMATION
5
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION