Download 23rd annual proceedings reliability physics

23rd annual
proceedings
reliability
physics
Orlando, Florida
.
March 26, 27, 28, 1985
Sponsored by
the IEEE Electron Devices Society and
the IEEE Reliability Society
IEEE Catalog No. 85CH2113-9
Library of Congress Catalog Card No. 82-640313
Copyright 63 1985 by the Institute of Electrical and Electronics Engineers, Inc.
345 East 47th St., New York, N.Y. 10017
1985 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
SYMPOSIUM OFFICERS
GENERAL CHAIRMAN . . . . . . . . . . . . . . . . . . . . . . . . . . . J. W. Peeples, NCR
VICE GENERAL CHAIRMAN . . . . . . . . . . . . . . . . . . . . L. A. Kasprzak, ZBM
SECRETARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .S . Vaidya, AT& T
FINANCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .B . Euzent, Intel
SYMPOSIUM COMMITTEE CHAIRMEN
TECHNICAL PROGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . D. S. Yaney, AT&T
PUBLICITY.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. W. Thomas, RADC
REGISTRATION.. . . . . . . . . . . . . . . . . . . . . . . A. A. DavisIR. W. Davis, ZBM
ARRANGEMENTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. A. Herman, Singer
AUDIO-VISUAL.. ................................ T. G. Lenihan, ZBM
PUBLICATIONS.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. J. Burns, RADC
CONSULTANT . . . . . . . . . . . . . . . . . . . . . . . . . D. E Barber, Scien-Tech Assoc.
BOARD OF DIRECTORS
G. H. Ebel
Singer
J. W Peeples
NCR
H. C. Jones
Westinghouse
A. L. Tarnburrino
RADC
E B. Micheletti
Rockwell
0. D. Trapp
Technology Associates
Published by the
ELECTRON DEVICES AND RELIABILITY SOCIETIES
of the
INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS, INC.
Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limits of U.S.
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classroom use without fee. For other copying, reprint or republication permission, write to Director, Publishing
Services, IEEE, 345 E. 47 St., New York, NY 10017. All rights reserved. Copyright @ 1985 by the Institute of
Electrical and Electronic Engineers, Inc.
TABLE OF CONTENTS
DIELECTRIC INTEGRITY AND RELIABILITY
Session Chairman: Anant G. Sabnis
Acceleration Factors for ~ h i nGate Oxide Stressing
J. W McPherson and D. A. Baglee . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
A Non-Aging Screen to Prevent Wearout of Ultra-Thin Dielectrics
W K. Meyer and D. L. Crook. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
The Prediction of Textured Poly Floating Gate Memory Endurance
H. A. R. Wegener and D. C. Guterman.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
A 100A Thick Stacked Si02/Si3N4/Si0,Dielectric Layer for Memory
Capacitor
I: Watanabe, A. Menjoh, T Mochizuki, S. Shinozaki and 0. Ozawa . . . . . . . . . . . . . . . 18
A Quantitative Physical Model for Time-Dependent Breakdown in SiO,
I. C. Chen, S. Holland and C. Hu ........................................... 24
Low Leakage Current Polysilicon Oxide Grown by Tho-Step Oxidation
Y Mikuta, S. Mori, K. Shinada and I: Usami. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
GaAs DEVICES AND CIRCUITS
Session Chairman: Aristos Christou
Co-Chairman: Chia-Chuan Lee
Investigation into GaAs Power MESFET Surface Degradation
J. M. Dumas, D. Lecrosnier and J. E Bresse. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
XPS Analysis of GaAs-Surface Quality Affecting Interelectrode
Material Migration
K. H. Kretschmer and H. L. Hartnagel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
High Voltage Screening of GaAs Power FETs: Effect on Burn-in
Yield and Modes of Catastrophic Device Failure
A. A. Zmmorlica, Jr. and J. R. Michener . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Failure Mechanism Study of GaAs MODFET Devices and Integrated
Circuits
A. Christou, W Tseng, M. Peckerar, W !'Anderson, D. M. McCarthy,
E A. Buot, A. B. Campbell and A. R. Knudson ................................ 54
NOVEL CONCEPTS
Session Chairman: Benjamin A. Moore
The Integrated Time and Stress Measurement Device Concept
G. Havey, J. Herrlin and D.Kampf. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
A Helium Leak Detector for Small Components
L. E. Bergquist . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Predicting the Data Retention Lifetime of a Lithium Carbon
Mono-Fluoride Battery Connected to a ZEROPOWER'" RAM
E Sigmund, J. Rea, D. HuffPnan, J. Lautzenhiser and S. Megahed . . . . . . .
ELECTROMIGRATION
Session Chairman: Ken Wendel
A Study of Resistance Variations During Electromigration
D. J. Lacombe and E. Parks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Electromigration-Induced Short Circuit Failure
J. M. Towner.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Electromigration and l/f Noise of Aluminum Thin Films
2: M. Chen, I: I? Djeu and R. D. Moore. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Electromigration and the Current Density Dependence
H. A. SchafSt, I: C. Grant, A. N. Saxena and C.- P Kao . . . . . . . . . . . . . . . . . . . . . . . . . 93
Wafer Level Electromigration Tests for Production Monitoring
B. J. Root and I: Turner.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100
Breakdown Energy of Metal (BEM)-A New Technique for
Monitoring Metallization Reliability at Wafer Level
C. C. Hong and D. L. Crook. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Passivation Material and Thickness Effects on the MTTF of A1-Si
Metallization
L. D. Yau, C. C. Hong and D. L. Crook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Aluminum Electromigration Parameters
J. Partridge and G. Littlejeld . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
METALLIZATION AND CORROSION
Session Chairman: G. Eugene Gottlieb
Stress Induced Voids in Aluminum Interconnects During IC Processing
J. I: Yue, W I? Funsten and R. R Taylor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .126
Si Nodule Formation in Al-Si Metallization
I: Tatsuzawa, S. Madokoro and S. Hagiwara . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
The Influence of Stress on Aluminum Conductor Life
I: rimer and K. Wendel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Moisture Resistance of Polyimide Multilevel Interconnect LSIs
I: Nishida, K. Mukai, I: Inaba, I: Kato, I. Tezuka and N. Horie.
. . . . . . . . . . . . . . . . . 148
Micro-Corrosion of A1-Cu Bonding Pads
S. ThomasandH. M. Berg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
A Paradoxical Relationship Between WidthtSpacing of Aluminum
Electrodes and Aluminum Corrosion
T Wada, H. Higuchi and T Ajiki . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASSEMBLY AND PACKAGING
Session Chairman: Walter H. Schroen
Electrical Reliability of Silver Filled Epoxies for Die Attach
R. L. Opila and J. D. Sinclair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Use of Wetting Angle Measurements in Reliability Evaluations of
Au-Si Eutectic Die Attach
N. I? Mencinger, M. I? Carthy and R. C. McDonald. . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
New Filler-Induced Failure Mechanism in Plastic Encapsulated
VLSI Dynamic MOS Memories
H. Matsumoto, M. Yamada, J. Fukushima, I: Kondoh, N. Kotani and M. Tosa. . . . . . 180
Computer Aided Stress Modeling for Optimizing Plastic Package
Reliability
S. K. Groothuis, W H. Schroen and M. Murtuza.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Moisture Resistance Degradation of Plastic LSIs by Reflow Soldering
I. Fukuzawa, S. Zshiguro and S. Nanbu. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Thermal Fatigue Damage in Pb-In Solder Interconnections
B. N. Aganvala . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
Si DEVICE ISSUES
Session Chairman: Gary A. Scoggan
A Cause and Cure of H, Instability in Shallow Junction Bipolar
Microwave Transistors
D. A. Figueredo and D. L. Packwood. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
ESD on CHMOS Devices-Equivalent Circuits, Physical Models
and Failure Mechanisms
N. Khurana, T Maloney and W Yeh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
Failure Analysis of ECL Memories by Means of Voltage Contrast
Measurements and Advanced Preparation Techniques
A. Dallman, G. Menzel, R. Weyl and E Fox. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
The Identification and Elimination of Human Contamination in
the Manufacture of ICs
R. W !.omas and D. W. Calabrese . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228