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Transcript 
TS271C,I,M
CMOS PROGRAMMABLE
LOW POWER SINGLE OPERATIONAL AMPLIFIER
■ OFFSET NULL CAPABILITY (by external
compensation)
■ DYNAMIC CHARACTERISTICS
ADJUSTABLE ISET
■ CONSUMPTION CURRENT AND DYNAMIC
■
■
■
■
PARAMETERS ARE STABLE REGARDING
THE VOLTAGE POWER SUPPLY
VARIATIONS
OUTPUT VOLTAGE CAN SWING TO
GROUND
VERY LARGE ISET RANGE
STABLE AND LOW OFFSET VOLTAGE
THREE INPUT OFFSET VOLTAGE
SELECTIONS
N
DIP8
(Plastic Package)
DESCRIPTION
The TS271 is a low cost, low power single opertional amplifier designed to operate with single or
dual supplies. This operational amplifier uses the
ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications.
The power supply is externally programmable with
a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio
and supply current can be minimized according to
the required speed. This device is specified for the
following ISET current values : 1.5µA, 25µA,
130µA.
This CMOS amplifier offers very high input impedance and extremely low input currents. The major
advantage versus JFET devices is the very low input currents drift with temperature (see figure 3).
D
SO8
(Plastic Micropackage)
PIN CONNECTIONS (top view)
1
8
2
-
7
3
+
6
4
5
ORDER CODE
Package
Part Number
Temperature Range
TS271C/AC/BC
0°C, +70°C
TS271I/AI/BI
-40°C, +125°C
TS271M/AM/BM
-55°C, +125°C
Example : TS271ACN
N
D
•
•
•
•
•
•
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
November 2001
1 - Offset Null 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4 - V CC 5 - Offset Null 2
6 - Output
7-V +
CC
8 - I Set
1/15
TS271C,I,M
BLOCK DIAGRAM
VCC
Current
source
xI
Input
differential
Output
stage
Second
stage
Output
VCC
E
E
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
+
Vid
Parameter
Supply Voltage
TS271C/AC/BC
1)
2)
TS271I/AI/BI
TS271M/AM/BM
Unit
18
V
±18
V
-0.3 to 18
V
Output Current for VCC+ ≥ 15V
±30
mA
Input Current
±5
mA
Differential Input Voltage
Vi
Input Voltage
Io
Iin
3)
Toper
Operating Free-Air Temperature Range
Tstg
Storage Temperature Range
0 to +70
-40 to +125
-55 to +125
-65 to +150
°C
°C
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
Parameter
VCC+
Supply Voltage
Vicm
Common Mode Input Voltage Range
2/15
Value
Unit
3 to 16
V
0 to VCC+ - 1.5
V
T20
T19
T17
T24
T21
T 18
R2
T 25
VCC
T 22
T 23
T 26
T29
T 28
T27
Input
T3
T1
T5
VCC
T4
T2
C1
Input
R1
T7
T6
T9
T8
T 13
T11
T 10
T 14
T 12
T16
Output
T 15
TS271C,I,M
SCHEMATIC DIAGRAM
3/15
TS271C,I,M
OFFSET VOLTAGE NULL CIRCUIT
RESISTOR BIASING
VCC+
VCC+
5
+
1
-
8
VO
-
VCC
25kΩ
VO
+
R set
+
R set
R set
VCC-
VCC-
R set CONNECTED TO GROUND
R set CONNECTED TO VCC- (R set VALUE : SEE Fig. 1)
OFFSET COMPENSATION GUARANTEED FOR
TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA)
Figure 1 : RSET Connected to VCC-
VCC = +3V
VCC = +16V
VCC = +5V
VCC = +10V
Rset
10MΩ
1MΩ
100kΩ
10kΩ
0.1µA
4/15
1µA
10µA
100µA
Iset
TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 1.5µA
VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
TS271C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
VO = 1.4V, Vic = 0V
Vio
DVio
Iio
Iib
Input Offset Voltage Drift
Input Offset Current note
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
Max.
1.1
0.9
0.25
10
5
2
12
6.5
3
Min.
Typ.
1.1
0.9
0.25
2
Unit
Max.
10
5
2
12
6.5
3.5
2
mV
µV/°C
1)
1
High Level Output Voltage
Vid = 100mV, RL = 1MΩ
Tmin ≤ Tamb ≤ Tmax
VOL
Low Level Output Voltage
Vid = -100mV
Avd
Large Signal Voltage Gain
ViC = 5V, RL = 1MΩ, Vo = 1V to 6V
Tmin ≤ Tamb ≤ Tmax
1
100
Input Bias Current - see note 1
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
VOH
1
1
150
8.8
8.7
9
8.8
8.6
100
9
30
20
100
CMR
Common Mode Rejection Ratio
ViC = 1V to 7.4V, Vo = 1.4V
60
80
60
80
SVR
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V, Vo = 1.4V
60
80
60
80
0.1
10
V
50
Gain Bandwidth Product
Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz
Supply Current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin ≤ Tamb ≤ Tmax
pA
300
50
30
20
pA
200
GBP
ICC
V/mV
MHz
0.1
15
17
10
mV
dB
dB
15
18
µA
Io
Output Short Circuit Current
Vo = 0V, Vid = 100mV
60
60
Isink
Output Sink Current
Vo = VCC, Vid = -100mV
45
45
SR
Slew Rate at Unity Gain
RL = 1MΩ, CL = 100pF, Vi = 3 to 7V
0.04
0.04
φm
Phase Margin at Unity Gain
Av = 40dB, RL = 1MΩ CL = 10pF
CL = 100pF
35
10
35
10
Degrees
KOV
Overshoot Factor
Av = 40dB, RL = 1MΩ CL = 10pF
CL = 100pF
40
70
40
70
%
Equivalent Input Noise Voltage
f = 1kHz, Rs = 100Ω
30
30
en
1.
Tmin ≤ Tamb ≤ Tmax
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
Typ.
TS271I/AI/BI
TS271M/AM/BM
mA
mA
V/µs
nV
-----------Hz
Maximum values including unavoidable inaccuracies of the industrial test.
5/15
TS271C,I,M
TYPICAL CHARACTERISTICS for ISET = 1.5µA
Figure 2 : Supply Current versus Supply Voltage
Figure 4b : High Level Output Voltage versus
High Level Output Current
20
Tamb = 25°C
AV = 1
VO = VCC / 2
15
OUTPUT VOLTAGE, VOH (V)
SUPPLY CURRENT, ICC (µ A)
20
10
5
0
4
8
12
Tamb = 25 ° C
16
VCC = 16V
12
8
SUPPLY VOLTAGE, VCC (V)
O U T P U T V O L T A G E , VOL(V )
INPUT BIAS CURRENT, IIB (pA)
VCC = 10V
V i = 5V
10
50
75
100
125
Figure 4 : High Level Output Voltage versus High
Level Output Current
0 .8
Tamb = 25 ° C
V id = 100mV
VCC= 5V
2
VCC = 3V
1
0
-10
-8
-6
-4
-2
OUTPUT CURRENT, I OH (mA)
6/15
-10
0
0
VC C = 3 V
0 .6
V
CC
= 5V
0 .4
T amb = 2 5 °C
V ic = 0 .5 V
V id = -1 0 0 m V
0 .2
0
1
2
O U T P U T C U R R E N T , I OL (m A )
3
Figure 5b : Low Level Output Voltage versus Low
Level Output Current
O U T P U T V O L T A G E , V OL (V )
OUTPUT VOLTAGE, VOH (V)
5
3
-20
1 .0
TEMPERATURE, T amb ( °C)
4
-30
Figure 5a : Low Level Output Voltage versus Low
Level Output Current
100
25
-40
OUTPUT CURRENT, I OH (mA)
Figure 3 : Input Bias Current versus Free Air
Temperature
1
VCC = 10V
4
0
-50
16
V id = 100mV
3
V C C = 10V
VC C = 1 6 V
2
1
Tamb = 2 5 °C
V i = 0 .5 V
V = -1 0 0 m V
id
0
4
8
12
16
O U T P U T C U R R E N T , I OL (m A )
20
TS271C,I,M
40
G A IN
0
G A IN (d B )
30
45
PHASE
20
T a m b = 2 5 °C
V C C+ = 1 0 V
R L = 1M Ω
C L = 100pF
A VC L = 100
10
0
-1 0
10
2
10
3
Phase
Margin
4
135
180
Gain
Bandwidth
Product
10
90
10
5
10
P H A S E (D e g re e s )
50
6
Figure 9 : Phase Margin versus Capacitive Load
P H A S E M A R G IN , φ m (D e g re e s )
Figure 6 : Open Loop Frequency Response and
Phase Shift
40
Ta m b = 2 5 °C
RL = 1M Ω
AV = 1
VC C = 10V
30
20
10
0
F R E Q U E N C Y , f (H z )
20
40
60
C A P A C IT A N C E , C
L
100
(p F )
Figure 10 : Slew Rate versus Supply Voltage
0.07
Ta m b = 2 5 °C
RL = 1MΩ
CL = 1 0 0 p F
AV = 1
100
80
60
0.06
0.05
0.04
0.03
0.02
0.01
4
40
4
0
8
12
16
S U P P L Y V O L T A G E , V C C (V )
SR
,
120
S L E W R A T E S S R (V / µs )
G A IN B A N D W . P R O D ., G B P (M H z )
Figure 7 : Gain Bandwidth Product versus Supply
Voltage
80
SR
Ta m b = 2 5 °C
R L = 1MΩ
CL = 1 0 0 p F
6
8
10
12
S U P P L Y V O L T A G E , VC C
14
(V )
16
P H A S E M A R G IN , φ m (D e g re e s )
Figure 8 : Phase Margin versus Supply Voltage
10
8
6
4
2
0
Ta m b = 2 5 °C
R L = 1MΩ
CL = 1 0 0 p F
AV = 1
4
8
12
16
S U P P L Y V O L T A G E , V C C (V )
7/15
TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 25µA
VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
TS271C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
VO = 1.4V, Vic = 0V
Vio
DVio
Iio
Iib
Tmin ≤ Tamb ≤ Tmax
TS271C/I/M
TS271AC/AI/AM
TS271C/I/M
TS271B/C/I/M
TS271AC/AI/AM
TS271B/C/I/M
Input Offset Voltage Drift
Input Offset Current note
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
Typ.
Max.
1.1
0.9
0.25
10
5
2
12
6.5
3
TS271I/AI/BI
TS271M/AM/BM
Min.
Typ.
1.1
0.9
0.25
2
10
5
2
12
6.5
3.5
2
mV
µV/°C
1)
1
High Level Output Voltage
Vid = 100mV, RL = 100kΩ
Tmin ≤ Tamb ≤ Tmax
VOL
Low Level Output Voltage
Vid = -100mV
Avd
Large Signal Voltage Gain
ViC = 5V, RL = 100kΩ, Vo = 1V to 6V
Tmin ≤ Tamb ≤ Tmax
1
100
Input Bias Current - see note 1
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
VOH
1
1
150
8.7
8.6
8.9
8.7
8.5
50
8.9
30
10
50
CMR
Common Mode Rejection Ratio
ViC = 1V to 7.4V, Vo = 1.4V
60
80
60
80
SVR
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V, Vo = 1.4V
60
80
60
80
0.7
150
V
50
Gain Bandwidth Product
Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz
Supply Current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin ≤ Tamb ≤ Tmax
pA
300
50
30
20
pA
200
GBP
ICC
Unit
Max.
V/mV
MHz
0.7
200
250
150
mV
dB
dB
200
300
µA
Io
Output Short Circuit Current
Vo = 0V, Vid = 100mV
60
60
Isink
Output Sink Current
Vo = VCC, Vid = -100mV
45
45
SR
Slew Rate at Unity Gain
RL = 100kΩ, CL = 100pF, Vi = 3 to 7V
0.6
0.6
φm
Phase Margin at Unity Gain
Av = 40dB, RL = 100kΩ CL = 10pF
CL = 100pF
50
30
50
30
Degrees
KOV
Overshoot Factor
Av = 40dB, RL = 100kΩ CL = 10pF
CL = 100pF
30
50
30
50
%
Equivalent Input Noise Voltage
f = 1kHz, Rs = 100Ω
38
38
en
1.
8/15
Maximum values including unavoidable inaccuracies of the industrial test.
mA
mA
V/µs
nV
-----------Hz
TS271C,I,M
TYPICAL CHARACTERISTICS for ISET = 25µA
Figure 13b : High Level Output Voltage versus
High Level Output Current
Figure 11 : Supply Current versus Supply
Voltage
20
OUTPUT VOLTAGE, VOH (V)
SUPPLY CURRENT, ICC (µ A)
200
150
100
Tamb = 25°C
AV = 1
VO = VCC / 2
50
0
4
8
12
Tamb = 25 ° C
16
VCC = 16V
12
8
SUPPLY VOLTAGE, VCC (V)
O U T P U T V O L T A G E , VOL(V )
INPUT BIAS CURRENT, IIB (pA)
VCC = 10V
V i = 5V
10
50
75
100
0 .8
Tamb = 25 ° C
V id = 100mV
VCC= 5V
2
0
-10
VCC = 3V
-8
-6
-4
-2
OUTPUT CURRENT, I OH (mA)
0
0
V
CC
= 5V
0 .4
T amb = 2 5 °C
V ic = 0 .5 V
V id = -1 0 0 m V
0 .2
1
2
O U T P U T C U R R E N T , I OL (m A )
3
Figure 14b : Low Level Output Voltage versus
Low Level Output Current
O U T P U T V O L T A G E , V OL (V )
OUTPUT VOLTAGE, VOH (V)
5
1
-10
VC C = 3 V
0 .6
0
125
Figure 13a : High Level Output Voltage versus
High Level Output Current
3
-20
1 .0
TEMPERATURE, T amb ( °C)
4
-30
Figure 14a : Low Level Output Voltage versus
Low Level Output Current
100
25
-40
OUTPUT CURRENT, I OH (mA)
Figure 12 : Input Bias Current versus Free Air
Temperature
1
VCC = 10V
4
0
-50
16
V id = 100mV
3
V C C = 10V
VC C = 1 6 V
2
1
Tamb = 2 5 °C
V i = 0 .5 V
V = -1 0 0 m V
id
0
4
8
12
16
20
O U T P U T C U R R E N T , I OL (m A )
9/15
TS271C,I,M
40
0
G A IN
G A IN (d B )
30
45
PHASE
20
Phase
Margin
T a m b = 2 5 °C
V C C+ = 1 0 V
R L = 100kΩ
C L = 100pF
A VC L = 100
10
0
135
2
10
3
180
Gain
Bandwidth
Product
-1 0
10
90
10
4
10
5
10
6
10
P H A S E (D e g re e s )
50
7
Figure 18 : Phase Margin versus Capacitive Load
P H A S E M A R G IN , φ m (D e g re e s )
Figure 15 : Open Loop Frequency Response and
Phase Shift
50
Ta m b = 2 5 °C
RL = 100kΩ
AV = 1
VC C = 10V
40
30
20
0
F R E Q U E N C Y , f (H z )
20
40
60
C A P A C IT A N C E , C
S L E W R A T E S , S R (V / µs )
G A IN B A N D W . P R O D ., G B P (M H z )
Ta m b = 2 5 °C
RL = 100kΩ
CL = 1 0 0 p F
AV = 1
0.8
0.7
0.6
0.5
4
0
8
12
16
S U P P L Y V O L T A G E , V C C (V )
P H A S E M A R G IN , φ m (D e g re e s )
Figure 17 : Phase Margin versus Supply Voltage
50
40
30
Ta m b = 2 5 °C
R L = 100kΩ
CL = 1 0 0 p F
AV = 1
4
8
12
S U P P L Y V O L T A G E , V C C (V )
10/15
16
SR
0.8
SR
0.6
0.4
Ta m b = 2 5 °C
R L = 100kΩ
CL = 1 0 0 p F
0.2
0
0.4
0
(p F )
1.0
0.9
10
L
100
Figure 19 : Slew Rate versus Supply Voltage
Figure 16 : Gain Bandwidth Product versus
Supply Voltage
20
80
4
6
8
10
12
S U P P L Y V O L T A G E , VC C
14
(V )
16
TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 130µA
VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
TS271C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
VO = 1.4V, Vic = 0V
Vio
DVio
Iio
Iib
Input Offset Voltage Drift
Input Offset Current note
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
Max.
1.1
0.9
0.25
10
5
2
12
6.5
3
Min.
Typ.
1.1
0.9
0.25
2
Unit
Max.
10
5
2
12
6.5
3.5
2
mV
µV/°C
1)
1
High Level Output Voltage
Vid = 100mV, RL = 10kΩ
Tmin ≤ Tamb ≤ Tmax
VOL
Low Level Output Voltage
Vid = -100mV
Avd
Large Signal Voltage Gain
ViC = 5V, RL = 10kΩ, Vo = 1V to 6V
Tmin ≤ Tamb ≤ Tmax
1
100
Input Bias Current - see note 1
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
VOH
1
1
150
8.2
8.1
8.4
8.2
8
15
8.4
10
6
15
CMR
Common Mode Rejection Ratio
ViC = 1V to 7.4V, Vo = 1.4V
60
80
60
80
SVR
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V, Vo = 1.4V
60
70
60
70
2.3
800
V
50
Gain Bandwidth Product
Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz
Supply Current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin ≤ Tamb ≤ Tmax
pA
300
50
10
7
pA
200
GBP
ICC
V/mV
MHz
2.3
1300
1400
800
mV
dB
dB
1300
1500
µA
Io
Output Short Circuit Current
Vo = 0V, Vid = 100mV
60
60
Isink
Output Sink Current
Vo = VCC, Vid = -100mV
45
45
SR
Slew Rate at Unity Gain
RL = 10kΩ, CL = 100pF, Vi = 3 to 7V
4.5
4.5
φm
Phase Margin at Unity Gain
Av = 40dB, RL = 10kΩ CL = 10pF
CL = 100pF
65
30
65
30
Degrees
KOV
Overshoot Factor
Av = 40dB, RL = 10kΩ CL = 10pF
CL = 100pF
30
50
30
50
%
Equivalent Input Noise Voltage
f = 1kHz, Rs = 100Ω
30
30
en
1.
Tmin ≤ Tamb ≤ Tmax
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
Typ.
TS271I/AI/BI
TS271M/AM/BM
mA
mA
V/µs
nV
-----------Hz
Maximum values including unavoidable inaccuracies of the industrial test.
11/15
TS271C,I,M
TYPICAL CHARACTERISTICS for ISET = 130µA
Figure 20 : Supply Current (each amplifier)
versus Supply Voltage
Figure 22b : High Level Output Voltage versus
High Level Output Current
20
OUTPUT VOLTAGE, VOH (V)
SUPPLY CURRENT, ICC (mA)
1.0
0.8
0.6
0.4
Tamb = 25°C
AV = 1
VO = VCC / 2
0.2
0
8
4
12
Tamb = 25 ° C
16
VCC = 16V
12
8
SUPPLY VOLTAGE, VCC (V)
O U T P U T V O L T A G E , VOL(V )
INPUT BIAS CURRENT, IIB (pA)
VCC = 10V
V i = 5V
10
50
75
100
0 .8
Tamb = 25 ° C
V id = 100mV
VCC= 5V
2
0
-10
VCC = 3V
-8
-6
-4
-2
OUTPUT CURRENT, I OH (mA)
12/15
0
0
V
CC
= 5V
0 .4
T amb = 2 5 °C
V ic = 0 .5 V
V id = -1 0 0 m V
0 .2
1
2
O U T P U T C U R R E N T , I OL (m A )
3
Figure 23b : Low Level Output Voltage versus
Low Level Output Current
O U T P U T V O L T A G E , V OL (V )
OUTPUT VOLTAGE, VOH (V)
5
1
-10
VC C = 3 V
0 .6
0
125
Figure 22a : High Level Output Voltage versus
High Level Output Current
3
-20
1 .0
TEMPERATURE, T amb ( °C)
4
-30
Figure 23a : Low Level Output Voltage versus
Low Level Output Current
100
25
-40
OUTPUT CURRENT, I OH (mA)
Figure 21 : Input Bias Current versus Free Air
Temperature
1
VCC = 10V
4
0
-50
16
V id = 100mV
3
V C C = 10V
VC C = 1 6 V
2
1
Tamb = 2 5 °C
V i = 0 .5 V
V = -1 0 0 m V
id
0
4
8
12
16
O U T P U T C U R R E N T , I OL (m A )
20
TS271C,I,M
40
0
G A IN
G A IN (d B )
30
45
PHASE
20
Phase
Margin
T a m b = 2 5 °C
V C C+ = 1 0 V
R L = 10kΩ
C L = 100pF
A VC L = 100
10
0
135
2
10
3
180
Gain
Bandwidth
Product
-1 0
10
90
10
4
10
5
10
6
10
P H A S E (D e g re e s )
50
7
Figure 27 : Phase Margin versus Capacitive Load
P H A S E M A R G IN , φ m (D e g re e s )
Figure 24 : Open Loop Frequency Response and
Phase Shift
70
Ta m b = 2 5 °C
RL = 10kΩ
AV = 1
VC C = 10V
60
50
40
30
0
F R E Q U E N C Y , f (H z )
20
40
60
C A P A C IT A N C E , C
S L E W R A T E S , S R (V / µs )
G A IN B A N D W . P R O D ., G B P (M H z )
Ta m b = 2 5 °C
RL = 10kΩ
CL = 1 0 0 p F
AV = 1
2
1
SR
4
4
8
12
16
S U P P L Y V O L T A G E , V C C (V )
SR
3
2
Ta m b = 2 5 °C
R L = 10kΩ
CL = 1 0 0 p F
1
0
0
(p F )
5
5
3
L
100
Figure 28 : Slew Rate versus Supply Voltage
Figure 25 : Gain Bandwidth Product versus
Supply Voltage
4
80
4
6
8
10
12
S U P P L Y V O L T A G E , VC C
14
(V )
16
P H A S E M A R G IN , φ m (D e g re e s )
Figure 26 : Phase Margin versus Supply Voltage
50
40
30
20
10
0
Ta m b = 2 5 °C
R L = 10kΩ
CL = 1 0 0 p F
AV = 1
4
8
12
16
S U P P L Y V O L T A G E , V C C (V )
13/15
TS271C,I,M
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
Millimeters
Inches
Dimensions
Min.
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
14/15
Typ.
Max.
Min.
3.32
0.51
1.15
0.356
0.204
1.65
0.55
0.304
10.92
9.75
7.95
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
TS271C,I,M
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
s
b1
b
a1
A
a2
C
c1
a3
L
E
e3
D
M
5
1
4
F
8
Millimeters
Inches
Dimensions
Min.
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Typ.
Max.
0.65
0.35
0.19
0.25
1.75
0.25
1.65
0.85
0.48
0.25
0.5
4.8
5.8
5.0
6.2
0.1
Min.
Typ.
Max.
0.026
0.014
0.007
0.010
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
45° (typ.)
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
8° (max.)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All Rights Reserved
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15/15
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