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DOC/LP/01/28.02.02 LESSON PLAN Sub Code & Name: EC 6201 – ELECTRONIC DEVICES Unit : I UNIT I Branch : EC Semester : II LP – EC6201 LP Rev. No: 00 Date:16/01/2014 Page 01 of 06 SEMICONDUCTOR DIODE 9 PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics. Objective: To acquaint the students with the construction, theory and operation of PN junction diode. Session No. Topics to be covered Time Ref. Teaching Method Introduction to the syllabus, Atoms, Atomic Models, Atomic 1. 50m 1,4,5 BB 50m 1,4,5 BB 50m 1,4,5 BB 50m 1,4,5 BB 50m 1,4,5 BB 50m 1,4,5 BB Energy band Classification of solids based on energy band theory (insulators, 2. conductors and semiconductors- Types) Mobility and conductivity, Intrinsic Semiconductors – Electrons 3. and Holes in the semiconductors. Extrinsic semiconductors – Donor and Acceptor impurities, PN 4. junction – Open circuited PN junction Diode – Reverse and Forward bias, VI 5. characteristics Current components in PN diode-Diode current, Reverse 6. saturation current, Majority carrier current components 7. Current Equations – Diffusion and Drift current 50m 1,4,5 BB 8. Switching Characteristics of PN Diode 50m 1,4,5 BB 9. Tutorial 50m 1,4,5 BB DOC/LP/01/28.02.02 LP – EC6201 LP Rev. No: 00 Date:16/01/2014 Semester : II Page 02 of 06 LESSON PLAN Sub Code & Name: EC 6201 – ELECTRONIC DEVICES Unit : II UNIT II Branch : EC BIPOLAR JUNCTION 9 NPN - PNP – Junctions - Early effect - Current equations – Input and Output characteristics of CE, CB, CC - Hybrid - π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter transistor. Objective: To acquaint the students with the construction, theory and operation of Bipolar Junction Transistors. Session Topics to be covered Time Ref. No. Teaching Method 10. NPN - PNP – Junctions 50m 1,4,5 BB 11. Early effect 50m 1,4,5 BB 12. Current equations 50m 1,4,5 BB 13. CB - Input and Output characteristics 50m 1,4,5 BB 14. CE - Input and output characteristics 50m 1,4,5 BB 15. Hybrid - π model, h-parameter model 50m 1,4,5 BB 16. Ebers Moll Model 50m 1,4,5 BB 17. Gummel Poon-model 50m 6,7 OHP 18. Multi Emitter transistor 50m 6,7 OHP CAT –I 180m DOC/LP/01/28.02.02 LP – EC6201 LP Rev. No: 00 Date:16/01/2014 Semester : II Page 03 of 06 LESSON PLAN Sub Code & Name: EC 6201 – ELECTRONIC DEVICES Unit : III UNIT III Branch : EC FIELD EFFECT TRANSISTORS 9 JFETs – Drain and Transfer characteristics - Current equations - Pinch off voltage and its significance – MOSFET - Characteristics - Threshold voltage - Channel length modulation, D-MOSFET, E-MOSFETCurrent equation - Equivalent circuit model and its parameters, FINFET, DUAL GATE MOSFET. Objective: To acquaint the students with the construction, theory and operation of field effect transistors. Session Topics to be covered Time Ref. No. Teaching Method 19. Introduction to Field Effect Transistors, Construction 50m 1,4,5 BB 20. JFETs – Drain and Transfer characteristics, JFET parameters 50m 1,4,5 BB 21. Expression for Saturation Drain Current, Pinch-off voltage 50m 1,4,5 BB 22. MOSFET – Construction and Operation 50m 1,4,5 BB 23. Characteristics of D-MOSFET, E-MOSFET 50m 1,3,5 BB 24. Threshold Voltage, Effect of Channel Length Modulation - 50m 1,3,5 BB 25. Current Equation – Equivalent Circuit Model and its parameters 50m 1,3,5 BB 26. FINFET 50m 6,7 OHP 27. Dual Gate MOSFET 50m 6,7 OHP and Operation of JFETs and its significance D-MOSFET, E- MOSFET DOC/LP/01/28.02.02 LP – EC6201 LP Rev. No: 00 Date:16/01/2014 Semester : II Page 04 of 06 LESSON PLAN Sub Code & Name: EC 6201 – ELECTRONIC DEVICES Unit : IV UNIT IV Branch : EC SPECIAL SEMICONDUCTOR DEVICES 9 Metal-Semiconductor Junction- MESFET, Schottky barrier diode - Zener diode - Varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR. Objective: To study about the special semiconductor devices. Session No. Topics to be covered Time Ref. Teaching Method 28. Metal-Semiconductor Junction 50m 5 BB 29. MESFET 50m 5,6,7 OHP 30. Schottky barrier diode 50m 1,5 BB 31. Zener diode 50m 1,2,4,5 BB 32. Varactor diode 50m 1,2,4,5 BB 33. Tunnel diode 50m 1,2,4,5 BB 34. Gallium Arsenide device 50m 5,6,7 BB 35. LASER diode 50m BB 5,6,7 36. LDR 50m CAT-II 180m 5,6,7 OHP DOC/LP/01/28.02.02 LESSON PLAN Sub Code & Name: EC 6201 – ELECTRONIC DEVICES Unit : V UNIT V Branch : EC Semester : II LP – EC6201 LP Rev. No: 00 Date:16/01/2014 Page 05 of 06 POWER DEVICES AND DISPLAY DEVICES 9 UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS - VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD. Objective: To acquaint the students with the construction, theory and operation power control devices, LED, LCD, and other Opto-electronic devices. Session Topics to be covered Time Ref. No. Teaching Method 37. UJT 50m 1,4,5 BB 38. SCR 50m 1,4,5 BB 39. DIAC 50m 1,4,5 BB 40. TRIAC 50m 1,4,5 BB 41. Power BJT 50m 6,7 BB 42. Power MOSFET – DMOS,VMOS 50m 6,7 BB 43. LED, LCD 50m 6,7 BB 44. Phototransistor, Optocoupler 50m 2,6,7 BB 45. Solar cell, CCD 50m 2,6,7 BB DOC/LP/01/28.02.02 LP – EC6201 LP Rev. No: 00 Date:16/01/2014 Semester : II Page 06 of 06 LESSON PLAN Sub Code & Name: EC 6201 – ELECTRONIC DEVICES Branch : EC Course Delivery Plan: Week 1 2 I Units II 1 1 I 3 II I 4 II I 5 II I 6 II I 7 II I 8 II I 9 II I 10 II I 11 II I 12 II I 13 II I 14 II C C 1 1 1 1 2 2 2 2 2 2 A 3 3 3 3 3 4 4 4 4 A 5 5 5 T T 1 2 TEST - I TEST - II TEST - III TEST - IV TEST - V I 15 II 5 5 TEST - VI I II 5 TEST - VII TEXT BOOKS 1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc Graw Hill Inc., 2007. REFERENCES 2. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978. 3. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice Hall, 10th edition,July 2008. 4. R.S.Sedha., “A Text Book of Applied Electronics”, S.Chand Publications, 2002. 5. Salivahanan. S, Suresh Kumar. N, Vallavaraj.A, “Electronic Devices and circuits”, First Edition, Tata McGraw- Hill, 1999. 6. http://www.allaboutcircuits.com 7. www.radio-electronics.com Prepared by Approved by Mr.S.R.Balasubramanian, Ms.T.J.Jeyaprabha, Ms.C.Gomatheeswari Preethika. AP 16/01/2014 Dr. S. Ganesh Vaidyanathan Signature Name Designation Date HOD, Department of ECE 16/01/2014 5