Download EC6201

DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : I
UNIT I
Branch : EC
Semester : II
LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 01 of 06
SEMICONDUCTOR DIODE
9
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias
characteristics, Switching Characteristics.
Objective: To acquaint the students with the construction, theory and operation of PN junction diode.
Session
No.
Topics to be covered
Time Ref.
Teaching
Method
Introduction to the syllabus, Atoms, Atomic Models, Atomic
1.
50m
1,4,5
BB
50m
1,4,5
BB
50m
1,4,5
BB
50m
1,4,5
BB
50m
1,4,5
BB
50m
1,4,5
BB
Energy band
Classification of solids based on energy band theory (insulators,
2.
conductors and semiconductors- Types)
Mobility and conductivity, Intrinsic Semiconductors – Electrons
3.
and Holes in the semiconductors.
Extrinsic semiconductors – Donor and Acceptor impurities, PN
4.
junction – Open circuited
PN junction Diode – Reverse and Forward bias, VI
5.
characteristics
Current components in PN diode-Diode current, Reverse
6.
saturation current, Majority carrier current components
7.
Current Equations – Diffusion and Drift current
50m
1,4,5
BB
8.
Switching Characteristics of PN Diode
50m
1,4,5
BB
9.
Tutorial
50m
1,4,5
BB
DOC/LP/01/28.02.02
LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 02 of 06
LESSON PLAN
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : II
UNIT II
Branch : EC
BIPOLAR JUNCTION
9
NPN - PNP – Junctions - Early effect - Current equations – Input and Output characteristics of CE, CB,
CC - Hybrid - π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter
transistor.
Objective: To acquaint the students with the construction, theory and operation of Bipolar Junction
Transistors.
Session
Topics to be covered
Time
Ref.
No.
Teaching
Method
10.
NPN - PNP – Junctions
50m
1,4,5
BB
11.
Early effect
50m
1,4,5
BB
12.
Current equations
50m
1,4,5
BB
13.
CB - Input and Output characteristics
50m
1,4,5
BB
14.
CE - Input and output characteristics
50m
1,4,5
BB
15.
Hybrid - π model, h-parameter model
50m
1,4,5
BB
16.
Ebers Moll Model
50m
1,4,5
BB
17.
Gummel Poon-model
50m
6,7
OHP
18.
Multi Emitter transistor
50m
6,7
OHP
CAT –I
180m
DOC/LP/01/28.02.02
LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 03 of 06
LESSON PLAN
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : III
UNIT III
Branch : EC
FIELD EFFECT TRANSISTORS
9
JFETs – Drain and Transfer characteristics - Current equations - Pinch off voltage and its significance –
MOSFET - Characteristics - Threshold voltage - Channel length modulation, D-MOSFET, E-MOSFETCurrent equation - Equivalent circuit model and its parameters, FINFET, DUAL GATE MOSFET.
Objective: To acquaint the students with the construction, theory and operation of field effect transistors.
Session Topics to be covered
Time Ref.
No.
Teaching
Method
19. Introduction to Field Effect Transistors, Construction
50m
1,4,5
BB
20. JFETs – Drain and Transfer characteristics, JFET parameters
50m
1,4,5
BB
21. Expression for Saturation Drain Current, Pinch-off voltage
50m
1,4,5
BB
22. MOSFET – Construction and Operation
50m
1,4,5
BB
23. Characteristics of D-MOSFET, E-MOSFET
50m
1,3,5
BB
24. Threshold Voltage, Effect of Channel Length Modulation -
50m
1,3,5
BB
25. Current Equation – Equivalent Circuit Model and its parameters 50m
1,3,5
BB
26. FINFET
50m
6,7
OHP
27. Dual Gate MOSFET
50m
6,7
OHP
and Operation of JFETs
and its significance
D-MOSFET, E- MOSFET
DOC/LP/01/28.02.02
LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 04 of 06
LESSON PLAN
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : IV
UNIT IV
Branch : EC
SPECIAL SEMICONDUCTOR DEVICES
9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode - Zener diode - Varactor diode Tunnel
diode- Gallium Arsenide device, LASER diode, LDR.
Objective: To study about the special semiconductor devices.
Session
No.
Topics to be covered
Time
Ref.
Teaching
Method
28.
Metal-Semiconductor Junction
50m
5
BB
29.
MESFET
50m
5,6,7
OHP
30.
Schottky barrier diode
50m
1,5
BB
31.
Zener diode
50m
1,2,4,5
BB
32.
Varactor diode
50m
1,2,4,5
BB
33.
Tunnel diode
50m
1,2,4,5
BB
34.
Gallium Arsenide device
50m
5,6,7
BB
35.
LASER diode
50m
BB
5,6,7
36.
LDR
50m
CAT-II
180m
5,6,7
OHP
DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : V
UNIT V
Branch : EC
Semester : II
LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 05 of 06
POWER DEVICES AND DISPLAY DEVICES
9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS - VMOS. LED, LCD, Photo transistor,
Opto Coupler, Solar cell, CCD.
Objective: To acquaint the students with the construction, theory and operation power control devices,
LED, LCD, and other Opto-electronic devices.
Session
Topics to be covered
Time
Ref.
No.
Teaching
Method
37.
UJT
50m
1,4,5
BB
38.
SCR
50m
1,4,5
BB
39.
DIAC
50m
1,4,5
BB
40.
TRIAC
50m
1,4,5
BB
41.
Power BJT
50m
6,7
BB
42.
Power MOSFET – DMOS,VMOS
50m
6,7
BB
43.
LED, LCD
50m
6,7
BB
44.
Phototransistor, Optocoupler
50m
2,6,7
BB
45.
Solar cell, CCD
50m
2,6,7
BB
DOC/LP/01/28.02.02
LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 06 of 06
LESSON PLAN
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Branch : EC
Course Delivery Plan:
Week
1
2
I
Units
II
1 1
I
3
II
I
4
II
I
5
II
I
6
II
I
7
II
I
8
II
I
9
II
I
10
II
I
11
II
I
12
II
I
13
II
I
14
II
C
C
1 1 1 1 2 2 2 2 2 2 A 3 3 3 3 3 4 4 4 4 A 5 5 5
T
T
1
2
TEST - I
TEST - II
TEST - III
TEST - IV
TEST - V
I
15
II
5 5
TEST - VI
I
II
5
TEST - VII
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc Graw Hill Inc., 2007.
REFERENCES
2. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition,
1978.
3. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice Hall,
10th edition,July 2008.
4. R.S.Sedha., “A Text Book of Applied Electronics”, S.Chand Publications, 2002.
5. Salivahanan. S, Suresh Kumar. N, Vallavaraj.A, “Electronic Devices and circuits”, First Edition, Tata
McGraw- Hill, 1999.
6. http://www.allaboutcircuits.com
7. www.radio-electronics.com
Prepared by
Approved by
Mr.S.R.Balasubramanian,
Ms.T.J.Jeyaprabha,
Ms.C.Gomatheeswari Preethika.
AP
16/01/2014
Dr. S. Ganesh Vaidyanathan
Signature
Name
Designation
Date
HOD, Department of ECE
16/01/2014
5