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NEWS RELEASE
For
Immediate
Release
Irvine Headquarters
19900 MacArthur Boulevard, Suite 400
Irvine, California 92612
Telephone: (949) 623-2900, Facsimile: (949) 474-1300
AGENCY CONTACT:
COMPANY CONTACT:
Jan Johnson
MultiPath Communications
Tel.: (714) 633-4008
[email protected]
Rebecca Bueno
Toshiba America Electronic Components, Inc.
Tel.: (949) 623-3099
[email protected]
Visit TAEC in IEEE MTT-S Booth #813
TOSHIBA ADDS HIGH GAIN 50W GaN HEMT POWER AMPLIFIER FOR
C-BAND SATCOM APPLICATIONS
High Power, High Gain Device Nearly Doubles Gain Compared to GaAs Power Amplifier
Anaheim, Calif., May 24, 2010 – Toshiba America Electronic Components, Inc. (TAEC*) and
its parent company, Toshiba Corp., announced the addition of a 50W C-Band gallium nitride
(GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product
family. The new device will be shown at the 2010 IEEE MTT-S International Microwave
Symposium, during the conference exhibition, May 25-27 in Anaheim, California.
The 50W TGI7785-50L is another commercial C-Band GaN
HEMT for satellite communication applications from Toshiba,
joining a 120W C-Band amplifier introduced last year, and other
GaN Toshiba Ku-Band devices. The new device operates in the
7.7GHz[1] to 8.5GHz range. RF performance specifications
include output power of 47.0dBm (typ.) with 40dBm input
power, linear gain of 11.0dB[2] (typ.) and drain current of 5.0
Amps[2] (typ.). This device enables increased output power and
helps reduce size and weight in solid state power amplifiers (SSPA) for SATCOM applications.
“Our initial entry into C-Band GaN HEMTs was at the high end of the output power range,
because microwave system designers have initially used GaAs devices for intermediate stage
amplification to drive higher output GaN devices,” said Homayoun Ghani, business development
Toshiba Adds 50W C-band GaN Power Amplifier for Satcom Applications
Page 2 of 4
manager, Microwave, RF and Small Signal Devices, in TAEC’s Discrete Business Unit. “This
50W GaN HEMT provides additional design flexibility by enabling use of higher performance
GaN at a mid-amplification stage. It provides higher linear gain of 11dB compared to our
conventional GaAs FETs with similar output power (45W and 60W), which have the gain of 6dB
(typ.)[3].”
Toshiba’s commercial GaN power amplifiers have been in volume production since 2008,
starting with the Ku-band TGI1414-50L power amplifier, which operates in the 14.0GHz to
14.5GHz range for satellite communication applications. GaN technology provides superior
device performance such as high gain and efficiency in the SATCOM and RADAR markets.
Toshiba is exploring new markets for this technology and will continue its efforts to develop
additional GaN devices in C-, Ku and other bands with higher output power.
Pricing and Availability
Samples of the TGI7785-50L are available now, with mass production scheduled for 3Q 2010.
For pricing, please contact your Toshiba representative.
Technical Specifications 50W TGI7785-50L GaN HEMT
Product Characteristics
TGI7785-50L
Frequency
7.7 – 8.5GHz
Output Power, Pout(typ.)
47.0dBm
Linear Gain, GL(typ.)
11.0dB
Drain Current,
24V/5A
VDS/IDS(typ.)
Efficiency2
Package
33%
7- AA04A
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The
company’s line-up of products consists of a series of components within the S, C, X and Ku
Toshiba Adds 50W C-band GaN Power Amplifier for Satcom Applications
Page 3 of 4
frequency bands, which are used in a wide variety of wireless applications. These applications
include FWA/BWA systems such as WiMAX, point-to-point (PTP) or point-to-multi-point
(PTMP) terrestrial microwave radio links, satellite communications systems (SATCOM) such as
high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar
systems and other industrial uses. Toshiba is also expanding its family of higher gain, higher
output power GaN devices for applications in satellite communications, terrestrial PTP or PTMP
communications, radar systems and other industrial uses.
*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic
components, Toshiba enables its customers to create market-leading designs. Toshiba is the
heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip
companies worldwide.
A committed electronic components leader, Toshiba designs and
manufactures high-quality flash memory-based storage solutions, discrete devices, displays,
advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products,
microcontrollers and wireless components that make possible today’s leading cell phones, MP3
players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by
Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor
manufacturer and the world’s third largest semiconductor manufacturer (Gartner, 2009 WW
Semiconductor Revenue, Dec. 2009).
For additional company and product information, please visit
http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact
information, is current and believed to be accurate on the date of the announcement, but is subject to change
without prior notice. Technical and application information contained here is subject to the most recent
applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used
within specified operating ranges as set forth in the most recent Toshiba product specifications and the
information set forth in Toshiba’s “Handling Guide for Semiconductor Devices,” or “Toshiba Semiconductor
Reliability Handbook.” This information is available at www.chips.toshiba.com, or from your TAEC
representative.
-###Editors Note:
Photos available for download at http://www.toshiba.com/taec/news/press_releases/2010:MWRF_10_592.jsp
MWRF 10 592
Toshiba Adds 50W C-band GaN Power Amplifier for Satcom Applications
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[1]
For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per
second.
[2]
[3]
with a supply voltage of 24V at 25oC
Toshiba GaAs FETs used for comparison are the 45W TIM7785-45SL and 60W TIM7785-
60SL.