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POWER TRANSISTOR – MOSFET Example of power MOSFET parameters; Parameter VDS(max) (V) ID(max) (A) - @ T = 25C PD (W) 2N675 7 150 2N679 2 400 8 2 75 20 POWER TRANSISTOR – MOSFET The superior characteristics of MOSFETs are; • Faster switching time; • No second breakdown; • Stable gain and response time over a wide temperature range (Figure on the next slide). POWER TRANSISTOR – MOSFET Transconductance versus drain current curves for various values of temperature – less than the variation in BJT current gain. POWER TRANSISTOR – MOSFET Transfer characteristics curves for various values of temperature. POWER TRANSISTOR – MOSFET Structure POWER TRANSISTOR – MOSFET Structure DMOS process can be used to produce a large number of hexagonal cells on a single chip. POWER TRANSISTOR – MOSFET Structure These hexagonal cells can be paralleled to form large-area devices without the need of emitter ballast resistance. A single power MOSFET may contain as many as 25,000 parallel cells. POWER TRANSISTOR – MOSFET The “ON” resistive path between drain and source (rds(on)) is an important parameter in power capability of MOSFET POWER TRANSISTOR – Comparison BJT MOSFET Requires complex input circuitry because of high input current (currentcontrolled device) Simple input circuitry because of low input current (voltage-controlled device). More sensitive to temperature variation – thermal runaway and problem of second breakdown. More immune to thermal runaway and second breakdown. POWER TRANSISTOR – Heat sinks • The power dissipated in a transistor can cause an internal temperature rise above ambient temperature. • This heat, if not properly removed, may cause internal temperature above a safe limit and can cause permanent damage to transistor. • Heat may be removed through proper packaging: POWER TRANSISTOR – Heat sinks • Additionally, heat sinks can be used to remove the heat developed in the transistor: POWER TRANSISTOR Heat sinks (Extra) TJ TA PD JA TJ Temperature of transistor junction TA Ambient temperature TJ TA Temperature difference Voltage difference Electrical equivalent circuit of thermalconduction process JA Thermal resistance between the junction and ambient Electrical resistance PD Thermal power through the element Electric current. POWER TRANSISTOR Manufacturers’ data sheet for power devices generally give: • maximum operating junction (device) temperature, TJmax; • thermal resistance from the junction to the case, JC; The temperature conduction process may be represented as follows: Heat sinks (Extra) POWER TRANSISTOR The following equation can be used to describe the temperature conduction process: Tdev Tamb PD devcase casesnk snk-amb If the heat sink is not used, then; Tdev Tamb PD devcase caseamb Heat sinks (Extra) POWER TRANSISTOR Heat sinks (Extra) EXAMPLE 8.3 A MOSFET has the following parameters; devcase 1.75 C/W; case-snk 1 C/W; snk-amb 5 C/W; case-amb 50 C/W; TJmax Tdev 150 C; Tamb 30 C; Determine the maximum power dissipation in the transistor and determine the temperature of the transistor case and heat sink. POWER TRANSISTOR Heat sinks (Extra) EXAMPLE 8.3 – Solution Maximum power (without heat sink) PDmax TJ max Tamb 150 30 2.32 W dev-case case-amb 1.75 50 Maximum power (with heat sink) PDmax TJ max Tamb dev-case case-snk snk-amb 150 30 15.5 W 1.75 1 5 POWER TRANSISTOR Heat sinks (Extra) EXAMPLE 8.3 – Solution (cont’d) Heat sink temperature Tsnk Tamb PDmax snk-amb Tsnk Tamb PDmax snk-amb 30 15.5 5 107.5 C POWER TRANSISTOR Heat sinks (Extra) EXAMPLE 8.3 – Solution (cont’d) Case temperature Tcase Tamb PDmax case-snk snk-amb Tcase Tamb PDmax case-snk snk-amb 30 15.51 5 123 C Note: The use of heat sink allows more power to be dissipated in the device. POWER TRANSISTOR Heat sinks (Extra) Power derating curve Manufacturer usually specifies: • the maximum temperature TJmax; • the maximum power dissipation PDmax, at a particular ambient temperature TA0 (usually 25C); and • the thermal resistance JA. In addition, a graph – power derating curve is provided. POWER TRANSISTOR Heat sinks (Extra) Power derating curve For operation below TA0, the device can safely dissipate the rated value of PD0 watts. If the device is to be operated at higher ambient temperature, the maximum allowable power dissipation must be derated according to the straight line.