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1998 Session 1
1.1
GaAs Manufacturing: Myth and Reality
Louis R. Tomasetta
Vitesse Semiconductor Corporation
1.2
Next Generation of Automotive Radar Systems: System Performance and MMIC Requirements
Josef Wenger
Daimler-Benz Research Center
1.3
Teledisic: Global Broadband Wireless Communications for the 21st Century
Jim Miller
Teledesic Corporation
1998 Session 2
2.1
Development of an Improved Capacitor Dielectric
Harland Cramer, James Oliver, Gil Dix, Michael Zimmerman
Northrop Grumman
2.2
Effects of PECVD Nitride Property on PHEMT Surface Passivation
Hengchang Chou, Mitchell Curiel, Katerina Hur, Larry Studebaker, David Kuhn, Bob Fisher, James Chang, Jerry
Want, Forrest Kellert
Hewlett-Packard Company, Arizona State University
2.3
Electrical Properties of thin RPECVD Si3N4 Films for Passivation and Capacitor Dielectric Layer
K.H. Kim, J.H. Lee, M.K. Sohn, J.S. Kim, H.Y. Cho, K.W. Chung, K.S. Seo
Seoul National University, LG Corporate Institute of Technology
2.4
Dry Etching of Polyamide Vias Using and Inductively Coupled Plasma source: Model and Experiment
S. Thomas III, C.H. fields, J.J. Brown, M. Sokolich, R. Martinez, B. Doty
HRL Research Laboratories
1998 Session 3
3.1
High Volume Production of AlGaAs/GaAs Heterojunction Bipolar GTransistors
N. Pan, D. Hill, C. Rose, D. McCullough, P Rice, D.P. Vu
Kopin Corporation
3.2
Molecular Beam Epitaxy Grown Carbon-Doped Heterojunction Bipolar Transistors
K. Bacher, W.K. Liu, Y., Wu, M. Micovic, D. Lubyshev, E.L. Miller, Y.Yun, J. Atherton, lJ. Chi, P. Ersland, M Fukuda,
A. Hansen, K. Lu, M. O’Keefe, P. Staecher, X. Zhang
Quantum Epitaxial Designs, Inc., Penn State University, M/A-Com
3.3
Epitaxial GaAs Materials for Wireless Applications Grown by Large Diameter, Single Wafer MOVPE
M. Bruns, K. Chang, N. Cody, E. Johnson, M. Mikhov, J. Morzella, M. Rittgers
Motorola Semiconductor Products Sector
3.4
GaAs Substrate Manufacturing: The Foundation for High Volume Solutions
John D. Blevins, Wright Patterson AFB
1998 Session 4 - High Volume Manufacturing – Special Session
1998 Session 5
5.1
High Speed Test of A quadrature Attenuator/Phase Shifter
Cecil Berry
Sanders A Lockheed Martin Company
5.2
Highly Flexible Microwave Test-Stand for volume Production MMIC Chip Sets
David Whitefield and John DelConte
Alpha Industries
5.3
Improving the Manufacturability of a production MESDET gate etch process
Sanjiv Kapoor
Watkins Johnson Company
5.4
On-Wafer thermal Resistance Measurement Technique for FET’s and HEMT’s
G.D. Via, C. Bozada, G. DeSalvo, C. Cerny, R. Dettmer, J. Ebel, J. Gillespie, T. Jenkins, K. Nakano, C. Pettiford, T.
Quach, J. Sewell, R. Welch
Wright-Patterson AFB
5.5
On Wafer, Pulsed Internal-Node Waveform Verification of Improved Coplanar MMIC Power Amplifiers
J.W. Bao, C.J. Wei, J.C.M. Hwang
Lehigh University
1998 Session 6
6.1
10 Years Production Using the GaAs MESFET DIOM Process
Otto Berger
Siemens Semiconductor Group
6.2
Development of a robust Recess Etching Process for MESFET Devices
B. Morley, P. Popoola
Watkins-Johnson company
6.3
MESFET Recess Geometry Impact on Idss
J. Malin, J. Beall, D. Zych, J. Bonkowski, S. Hillyard, N. Brette, K. Decker, T. Nagle
Triquint Semiconductor
6.4
A Double Selective Double Recess Process for Power PHEMT Devices
W.F. Kopp, S.C. Wang, R. Isaak, P.C. Chao
Sanders, a Lockheed Martin Company
1998 Session 7
7.1
Power HBT’s for Digital Cellular Applications
Hidenori Shimawaki, Nobuyuki Hayama, Norio Goto, Kazuhiko Honjo
NEC Corporation
7.2
GaInP/GaAs HBT Manufacture for 10 Gb/s Telecommunications Applications
Robert Surridge, Tim Lester
Nortel
7.3
Passivation Comparison for IngaP/GaAs Heterojunction Bipolar Transistors
J. Sewell, C. Bozada, G. DeSalvo, R. Dettmer, J. Gillespie, C. Cerny, J. Ebel, T. Jenkins, K. Nakano, C. Pettiford, T.
Quach, R. Thompson, D. Via, R. Welch, R. Anholt
Wright-Patterson Air Force, Gateway Modeling, Epitronics Corp.
7.4
InGaP/GaAsHBTs with Ft and Fmax> 100 GHz
D.A. Ahmari, Q.J. Hartmann, P.D. Meyer, M.L. Hattendorf, Q. Yang, J. Mu, M. Fend, G.E. Stillmand
University of Illinois
1998 Session 8
8.1
mm-Wave Ion Implanted Low Noise Process Transfer from the University of Illinois
David Danzilio
M/A-COM
8.2
Electronic Database for MMIC Design GTraceability
K.M. Renaldo, J.W. Atkinson, S.F. Rutz, S.P. Spurgeon, H.G. Henry
Northrop Grumman, SYCOM
8.3
Heterojunction Device simulation for Production PHEMT Process Control
Y.C. Pan, K. Tran, M.F. Zybura, B. Ireton
Litton Solid State Division, Stanford University
8.4
6” GaAs Wafers Made of LEC Grown Crystals
Tilo Flade, Wolfram, Fliegel, Ralf Hammer, Manfred Jurisch, Azel Kiesel, Andre Kleinwechter, Andreas Kuhler,
Ulrich Kretzer, Berndt Weinert
Freiberger Compound Materials GmbH
8.5
Air-cavity Plastic Packages and New Sealing Methods using a Liquid Epoxy
Jong-Tae Ki, Ki-Sung Ham, Tae-Soo Kim, Chan-Ik Park, Jung-Rim Kee
CTI Semiconductor Corporation
8.6
A Cost Effective and Permanent Bias and Adjustment Technique for MMIC Circuits
Cecil Berry, Michael Blum, Scott Powell
Sanders a Lockheed Martin Company
8.7
Large Volume and Highly Stable Production of MOVPE wafers
H. Otoki, H. Kamogawa, T. Meguro and M. Kashiwa
Hitaka Works, Hitachi Cable
1998 Session 9
9.1
Fluorine Passivation Effect in AlInAs/GaInAs HEMT Material
N. Hayafuji, Y. Yamamoto, K. Sato
Mitsubishi Electric Corporation
9.2
Recoverable Drift in Output Power of PHEMT’s under RF Overdrive
Robert E. Heoni III, Jianwen Bao, Kiankang Bu, James C.M. Hwang
Lehigh University
9.3
Pseudomorphic HEMT Reliability Analysis using Spectrally Resolved Carrier Recombination Imaging
Z.Y. Wang, M.W. Zhang, Li-Jen Cheng, G.P. Li, Y.C. Chou, R. Lai, Y.C. Chen, D. Leung, C.S. We, P.H. Liu, J. Scarpulla,
D.C. Streit
University of California, Irvine, California Institute of Technology, TRW, Inc.
9.4
Transmission Line Pulse Measurements on InP Based HEMTs
K. van der Zanden, K. Bock
IMEC, MAP/CSE
9.5
Non-destructive and Efficient Measurement Technique for Monitoring of Beryllium Outdiffusion in AlGaAs/GaAs
HBTs by Photoluminescence (PL)
Hong Wang, Geok Ing Ng, Haiqun Zheng, Penghua Zhang
Nanyang Technological University
1998 Session 10
10.1 Transition of 0.15 um T-Gates to Manufacturing
L.K. Hanes, B.E. Ostrowski, A.R. St. Germain, D. Shaw, K. Alavi
Raytheon Company
10.2 E-Beam T-Gate Technology for Pseudomorphic HEMTs on 3” GaAs with Gate Length of 0.15um
T. Jakobus, W. Bronner, T. Fink, K.H. Glorer, J. Hornung, A. Hulsmann, K. Kohler, Z. Lao, B. Raynor, M.
Schlechtweg, A. Thiede, L. Verweyen
Franhofer-Institute
10.3 0.25 Micron Optical E-gate Development for GaAs Device Applications Using Chromeless Phase Shift Technology
Jerry Leonard
TriQuint Semiconductor, Inc.
10.4 Phase-shifter Edge Line Mask Technique for sub-quarter Micron Gate Ion Implanted GaAs MESFET
Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani
Oki Electric Industry Col, Ltd.
10.5 X-Ray Lithography Infrastructure Development for MMIC Manufacturing
N. Dandekar, J. Heaton
Sanders – A Lockheed Martin Company
1998 Session 11
11.1 A Low Cost 77 GHZ MMICs Process Using Direct Ion-Implanted GaAs MESFETs
H. Hsia, J. Middleton Z. Thang, R. Shimon, D. Coruth, D. Becker, J. Fendrich, M. Fend
University of Illinois at Urbana-Champaign
11.2 InGaP/GaAs HFETs: Manufacturable High-Speed Devices
Q.J. Hartmann, A. Mahajan, D. Becher, H. Hsia, D.A. Ahmari, Q. Yang, I. Adesida, M. Feng, G.E. Stillman
University of Illinois
11.3 A Designed Experiment for the Optimization of PHEMT Layout and Profile
H.G. Henry, K. M. Renaldo
Northrop Grumman
11.4 Physical Origins of MESFET Gate-Lag Characteristics
Jianwen Bao, Robert E. Leoni III, Xiaohang Du, Mikkhail S. Shirokov, James C.M. Hwang
Lehigh University
11.5 Minimizing Gate Lag in Planar GaAs MESFETs
D.A. Suda, J.H. Bennett, M.C. Houng, B.A. Rioux, L. Bourbonnais
Nortel (Northern Telecom)
1998 Session 12
12.1 The Application of Silicon-Based Process Simulation Tools to the Fabrication of Heterojunction Bipolar Transistors
C.H. Fields, S. Thomas III
HRL Laboratories, LLC
12.2 E-Beam Metal Evaporation: Photo Resist Critical Dimensions & Substrate Adhesion Dependence on Throw
Distance, Deposition Rate, Radiation, and Film Stress
David Kuhn, Karen Pruett, Alan Kashiwagi, JoAnn Peterson Kuni Yamamoto, Larry Studebaker, Scott Lafrancois,
Nancie Caldwell
Hewlett Packard
12.3 Low Resistance, Thermally Stable Ohmic Contact to n-GaAs for Low-Cost High-Density Interconnections
Yasushi Shiraishi, Tadash Maeda
NEC Corporation
12.4 The Importance of surface Chemistry of GaAs During Chemically-Amplified Resist Processing by X-ray Lithography
Bing Lu, Olga Vladimirsky, James W. Taylor, Niru Dandekar
Sanders, a Lockheed Martin Co.
12.5 Heterojunction Bipolar Transistor Isolation by Boron Implant
R. Dettmer, C. Bozada, C. Cerny, G. DeSalvo, J. Ebel, J. Gillespie, T. Jenkins, K. Nakano, C. Pettiford, T. Quach, J.
Sewell, D Via, R. Welch, R. Bhattacharya
Wright-Patterson, AFB, Universal Energy Systems