Download FQA9N90C 900V N-Channel MOSFET

QFET
®
FQA9N90C
900V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V
Low gate charge ( typical 45 nC)
Low Crss ( typical 14pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-3P
FQA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
FQA9N90C
Units
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25°C)
9.0
A
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
(Note 1)
5.7
A
36
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
900
mJ
IAR
Avalanche Current
(Note 1)
9.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
28
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Derate above 25°C
4.0
V/ns
280
W
2.22
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FQA9N90C Rev. A
1
Typ
Max
Units
--
0.45
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FQA9N90C 900V N-Channel MOSFET
July 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA9N90C
FQA9N90C
TO-3P
--
--
30
FQA9N90C
FQA9N90C_F109
TO-3PN
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
900
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.99
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
1.12
1.4
Ω
--
9.2
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 4.5 A
gFS
Forward Transconductance
VDS = 50 V, ID = 4.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
2100
2730
pF
--
175
230
pF
--
14
18
pF
--
50
110
ns
--
120
250
ns
--
100
210
ns
--
75
160
ns
--
45
58
nC
--
13
--
nC
--
18
--
nC
9.0
A
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDD = 450 V, ID = 11.0A,
RG = 25 Ω
(Note 4, 5)
VDS = 720 V, ID = 11.0A,
VGS = 10 V
(Note 4, 5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
36
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =9.0 A
--
--
1.4
V
trr
Reverse Recovery Time
550
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 9.0 A,
dIF / dt = 100 A/µs
--
Qrr
--
6.5
--
µC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21mH, IAS =9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQA9N90C Rev. A
2
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FQA9N90C 900V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
3.0
2.5
VGS = 10V
2.0
VGS = 20V
1.5
1
10
0
10
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
1.0
-1
0
5
10
15
20
25
10
30
0.2
0.4
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
1.4
VDS = 180V
Ciss
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
500
1.2
VDS = 450V
10
2000
1500
1.0
12
VGS, Gate-Source Voltage [V]
Capacitance [pF]
2500
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0.6
VSD, Source-Drain voltage [V]
Crss
VDS = 720V
8
6
4
2
※ Note : ID = 9A
0
-1
10
0
10
0
1
10
FQA9N90C Rev. A
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FQA9N90C 900V N-Channel MOSFET
Typical Performance Characteristics
FQA9N90C 900V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
Operation in This Area
is Limited by R DS(on)
2
10 µs
8
100 µs
1
10
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
4
2
-2
10
6
1
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
10
※ N o te s :
1 . Z θ J C (t) = 0 .4 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
-1
0 .1
PDM
0 .0 5
t1
0 .0 2
10
0 .0 1
-2
10
-5
t2
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQA9N90CRev. A
4
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FQA9N90C F109 900V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA9N90C Rev. A
5
www.fairchildsemi.com
FQA9N90C 900V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA9N90C Rev. A
6
www.fairchildsemi.com
FQA9N90C 900V N-Channel MOSFET
Mechanical Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FQA9N90C Rev. A
7
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FQA9N90C 900V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters
FQA9N90C Rev. A
8
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
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OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I29
9
FQA9N90C A
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FQA9N90C 900V N-Channel MOSFET
tm