Download Topic 4: Digital Circuits

Topic 4: Digital Circuits
(Integrated Circuits Technology)
Part two
Logic Levels: Practical Scenario
• The two sets of levels are motivated by these
scenarios
Valid
input
VOHMIN
Valid
output
VIHMIN
RTH
Rline
Vcc
RIN
Vdrop
Scenario 1:
Source outputs logic
high at lowest threshold,
VOHMIN
I
SINK
SOURCE
Valid
input
Vcc
VOLMAX
Valid
output
VILMAX
RTHL
Rline
RIN
I
SINK
SOURCE
Scenario 2:
Source outputs logic low
at highest threshold,
VOLMAX
DC Loading
• The output high and low limits are exceeded only if a device
output is heavily loaded. Logic device loading is specified by
– maximum current
– Fanout := max. number of similar devices that can be connected
to a load without exceeding high and low state current limits
Current Specs
IOHMAX
Max source current for which VOH  VOHMIN (valid output high)
IOLMAX
Max sink current for which VOL  VOLMAX (valid output low)
IIHMAX
Max input current for VIH  VIHMIN (valid input high)
IILMAX
Max input current for which VIL  VILMAX (valid input low)
DC Loading: Current specs
Valid
input
IIHMAX1
1
Vo > VOHMIN
Io < IOHMAX
n
IIHMAXn
Valid
input
IILMAX1
Vo < VOLMAX
1
Io < IOLMAX
IILMAXn
• Scenario 1: Output high
connected to more than
one sink. The current
outputted by the source
increases with the number
of sinks.
Io = Iinj = nIin (for n
similar sinks)
n
• Scenario 2: Output low
connected to more than
one sink. Note that the
current now flows into the
output terminal (logic
source becomes a current
sink). Again current
increases with the number
of logic sinks.
Io = Iinj = nIin (for n
similar sinks)
DC Loading: Fanout
• Each gate input requires a
certain amount of current to
maintain it in the LOW state
or in the HIGH state.
– IIL and IIH
– These are specified by the
manufacturer.
 I OL max driver 
nFlow  

  I ILdriven 
 I OH max driver 
nFhigh  

I
  IH driven 
Fanout calculation
–Low state fanout, nFlow:= maximum
number of similar gates that can be driven
low so that Vo < VOLMAX
–High state fanout, nFhigh:= maximum
number of similar gates that can be driven
high so that Vo > VOHMIN
–Need to do current loading calculation for
non-gate loads (LEDs, termination
resistors, etc.)
Fanout, nF  min nFlow, nFhigh
AC Loading
•
•
All gate outputs have associated parasitic capacitances due
to external wiring (including their gate pins) as well as
internal semiconductor storage effects (junction
capacitances). In addition there are parasitic capacitances
associated with each gate input. Typically the capacitance
component due to IC pins is of the order of 10-15pF.
The final transistor which drives the gate output acts as an
electronically controlled switch with a pull-up to Vcc.
Vcc
R
Vo
Parasitic
capacitance,
Cp
Contact
resistance, r
Switch closed:
Vo = 0
Switch opens: Cp charges to Vcc
with LH=RCp.
Switch closes: Cp discharges
through contact resistance, r,
with HL=rCp.
3. CMOS Technology
• Static complementary CMOS - except during
switching, output connected to either VDD or GND
via a low-resistance path
– high noise margins
• full rail to rail swing
• VOH and VOL are at VDD and GND, respectively
– low output impedance, high input impedance
– no steady state path between VDD and GND (no static
power consumption)
– delay a function of load capacitance and transistor
resistance
– comparable rise and fall times (under the appropriate
transistor sizing conditions)
• Dynamic CMOS - relies on temporary storage of
signal values on the capacitance of high-impedance
circuit nodes
– simpler, faster gates
– increased sensitivity to noise
3.1. CMOS Circuit Topology

Pull-up network (PUN) and pull-down network (PDN)
VDD
PMOS transistors only
In1
In2
PUN
InN
In1
In2
InN
pull-up: make a connection from VDD to F
when F(In1,In2,…InN) = 1
F(In1,In2,…InN)
PDN
pull-down: make a connection from F to
GND when F(In1,In2,…InN) = 0
NMOS transistors only
PUN and PDN are dual logic networks
b) Dual PUN and PDN
• PUN and PDN are dual networks
– DeMorgan’s theorems
• (A + B)’ = A’.B’
• (A.B)’ = A’ + B’
– a parallel connection of transistors in the PUN
corresponds to a series connection of the PDN
• Complementary gate is naturally inverting
(NAND, NOR, NOT)
• Number of transistors for an N-input logic
gate is 2N
CMOS Complements
PDN
PUN
3.2 Examples of CMOS Gates
VDD = 5V
Vi
0(L)
5(H)
Q2
p-channel
Vo
Vi
Q1
n-channel
CMOS inverter
Q1
OFF
ON
Q2
Vo
ON 5(H)
OFF 0(L)
CMOS NAND
• Use 2n transistors for n-input gate
• p-channel in parallel, n-channel in series
• Add output inverter to convert to AND
CMOS NOR
• Like NAND -- 2n transistors for n-input gate
• p-channel series, n-channels in parallel
NAND vs NOR
• For a given silicon area, PMOS transistors are have higher ON
resistance than NMOS transistors => Output High voltage is lower
due to series connection in NOR.
NOR
NAND
•NAND output
LOW voltage is
not as badly
compromised
• Result: NAND gates are preferred in
CMOS.
CMOS characteristics
• Essentially no DC current flow into MOS gate terminal
• Gate has capacitance, C which MUST be charged then discharged for
switching
• Required power is CPDV2f ; where f is switching frequency, CPD is the
power dissipation capacitance
• Very little (0(nA)) current in output chain, except during switching when
both transistors are partially on
• More power required when signal rise times are small since transistors
are on longer
• Symmetric output structure ==> equally strong drive (IOH, IOL) in LOW
and HIGH states
This is why..
1. Power dissipation in PCs increase with
clock frequency
2. There is a lot of research on low
voltage logic devices (5V, now 3.3V
common)
CMOS families and typical specifications
•
VOHMIN=VDD-0.1V, VIHMIN=0.7Vcc, VILMAX=0.3VDD, VOLMAX=0.1V
•
3V  VDD  18V (original 4000 family), 2V  VDD  6V (newer HC family)
•
Input source and leakage currents: <1A
•
Output current: typically 4mA but can be as high as 24mA
•
Families: original 4000 family (slower, lower power dissip.)
– 74FAMnnn: FAM = family type, nnn=function number – faster
– 54FAMnnn: same as 74FAMnnn but for military apps.
– FAM : HC (High Speed CMOS), HCT (HC TTL compatible), VHC/VHCT (Very
High speed), FCT/FCT-T(Fast CMOS TTL compatible/ with TTL VOH)
– Egs: 74HC04 – hex inverter. IOLMAX=20  A, IOHMAX=-20A.
•
NB: Special handling precautions hold as CMOS can be damaged by very a
small electrostatic discharge
4. TTL
= Transistor-Transistor Logic. Uses bipolar transistors and diodes
Vcc
IN1
L
L
H
H
R
IN1
OUT
IN2
IN2
L
H
L
H
OUT
L
L
L
H
Diode Logic
AND gate
Problem… defined levels change easily when loaded. E.g. when diode
gates are cascaded. Need for transistor buffering
Vcc
R
IN1
IN2
Vi
R
OUT
IN1
L
L
H
H
IN2
L
H
L
H
NAND gate!
OUT
H
H
H
L
TTL: practical realisation
Diode AND gate
Dynamic
resistance:
lower ON (L)
voltage, faster
switching
Limits
current in
transition
Totem
Pole
Output
Schottky
Diodes
Clamp diodes
TTL Logic families and specs
•
•
•
•
•
•
•
Vcc=5V±10%, Vohmin=2.7V, Vihmin=2.0V, Volmax=0.5V, Vilmax=0.8V
 NMh = 0.7V, NML=0.3V
Families: TTL e.g. 7404, 74H04, 74L04 original family
– Schottky e.g. 74S04: faster, hi power consumption
– Low Power Schottky e.g. 74LS04: lower Pd, Slower Schottky
(common)
– Advanced Schottky
e.g. 74AS04
2x speed of S,
same Pd
– Adv. Low Pwr Sky e.g. 74ALS04
see table 3-11, Wakerly
For LS, typically: IILmax=-0.4mA, IIHmax=20uA, IOLmax=8mA,
IOHmax=-400uA.
FANOUT (LSTTL into LSTTL)=20
NB: TTL outputs can sink more current than they can source.
TTL vs CMOS
TTL
CMOS
Noise Margins
0.3(high), 0.5 (low)
0.3Vcc
Input source
currents
High in both states: 0.2 to
2mA(L), 20-50uA (H)
Typ < 1uA in both
states
Power
Consumption
Relatively high, fixed. 2mW for
74LS, 20mW for 74Sxx.
Depends on Vcc,
frequency. Negligible
static dissipation. Very
low for FCTT
Output drive
current
Asymmetric:
High state: 0.4-2mA
Low state: 8 – 20mA
Symmetric:
Typ 4mA but AC family
can drive 24mA
Power supply
voltage
5V ±10%
3V  Vcc  18V (original
4000 family), 2V  Vcc
 6V (newer HC family)
Interconnectio
n (CMOS to
TTL, TTL to
CMOS)
Cannot drive CMOS since
VOHMIN(TTL)<VIHMIN(CMOS)
Pullup resistor needed unless using
TTL compatible family e.g. HCT
Can directly drive TTL
Applications: CMOS/TTL interfacing
VOHMIN,
VOLMAX
VIHMIN,
VILMAX

3.5
VOHMIN,
VOLMAX
VIHMIN,
VILMAX
4.9

2.0
2.7
1.5

0.5
TTL
CMOS
0.8

0.1
CMOS
TTL
5. Applications: Unused inputs
Floating inputs can lead to unreliable operation!!!
Unused (Floating) Inputs [] Tie together and bundle with used inputs OR
[] Tie HIGH thru pull up resitor, Rpu OR
Must ensure that
[] Tie LOW thru pull down resistor, Rpd
does not affect
[] For CMOS use 1K-10K values
design function.
[] For TTL calculate based on # of inputs tied thru
E.g. tie HIGH for
AND/NAND or
resistor so that:
LOW for
Vcc-RpuIIHmax > VIHmin
OR/NOR
RpdIILmax < VILmax
[]Too small Rpu makes TTL susceptible to
spikes etc. over 5.5V.
See Sec 3.10.4, 3.5.6 Wake.
Power supply filtering
• For each logic IC place a small capacitor (0.01uF tp
0.1uF) across Vcc and ground in close proximity to
the IC
• Reduces transient effect of switching on power
supply, particularly when supply source is
connected via long circuit path (resistive and
inductive effects). Essentially each capacitor
provides a local reservoir for fast supply of
charge required when the device switches
Applications: Open-drain (CMOS) or open collector (TTL)
outputs
• In CMOS no PMOS transistor, use external pull-up resistor
for Vcc drive
Vcc
Calculate external Rpu
so that VOLMAX achieved
at IOLMAX. Must include
other loads so this gives
minimum Rpu.
Vcc
Rpu
IC
Z
A
Q1
B
Q2
A
0
0
1
1
B
0
1
0
1
Q1
open
open
ON
ON
Q2
open
ON
open
ON
Output stage of
Open Drain NAND
Z
1
1
1
0
Why ?
• Slightly higher current capability
• Can form an open-drain/collector bus. Can select data for
access to common bus.. E.g for Dataout = Datai set Enablej =0,
jI, Enablei =1,
Problem -- really bad rise time due to all O/P capacitances in parallel
and large pullup.
Applications: Bus Access - Contention and Tristate
Logic
Common bus
0
a
Best “fix”….Tristate logic
Vin
1
Vout
EN
1
b
0
??
“regular TTL or CMOS
•Get bus contention when two outputs
try to drive the bus to different states.
• Value on the bus may be
indeterminate;
•Damage possible (a driving b!!)
•On a PC data bus, can cause PC to
crash
EN
0
1
1
Vin
x
1
0
Vout
HiZ
0
1
•Available in inverting or
non-inverting .. Sec 3.7.3
Wakerly.
•NO Pull-up needed
•NO degradation in
transition speed
Applications: Digital meets analog
Schmitt Trigger Inputs…Sec3.7.2/Wakerly
•
Schmitt trigger devices are used primarily to deal with signal levels which
are not at valid logic levels. They can therefore be used for
• interfacing noisy analogue signals to a logic circuit e.g. signals from
switches, RC networks etc.
• interfacing slow signals (i.e. signals which remain in the invalid range for
relatively long periods)
• regenerating degraded logic signals e.g. signals on a long serial
communication line.
Schmitt trigger devices do comply with the input thresholds of the respective
family. However, they employ a bit of hysterisis (memory!!) to take care of
invalid signal levels. The devices are characterised by upper and lower
thresholds (UT, LT). When the input exceeds UT it is treated as a logic 1
UNTIL it goes below LT. Then, and only then, is it treated as a logic 0.
Vo
Vi
Vo
LT
Vo
UT
Last level is
latched until
opposite
threshold is
crossed
VL
VH Vi
Schmitt Trigger o/p Characteristic
VT
Vi
Standard logic o/p Characteristic
Applications: Logic Drive
Driving a LED with TTL
Vcc
ILED
R
VLED
Logic
Device
VOL
Low output turns LED ON
Drive current typ 5 -10mA
Use buffers for extra drive
• ILED is 10mA typically worst case
• Use formula:
VOL+VLED+(ILED*R)=VCC
to determine R.
NB…….
• Can assume worst case VOL=VOLMAX
for some CMOS as well as TTL at
IOL=ILED.
• Best to use device for which
IOLMAX>ILED.
Applications: Logic Drive
Driving a Solenoid or
relay with TTL
Vcc
Free-wheeling
diode
protects
electronics
from coil
back emf
Logic
Device
Low output turns activates relay
or solenoid
• 5V relays do exist.
• Some incorporate the free
wheeling Diode.
• Most have enough internal
resistance to operate
directly as shown.
• Check using LED
computation if built in
resistance is sufficient or if
an external series resitance
is needed