Download EE 338: Physical Electronics

EE 338: Physical Electronics (Entry-Level Elective)
Spring 2009
2008-9 Catalog Data:
338 Physical Electronics (3) Semiconductor device characteristics and
applications. Physical models of electronic conduction in solids, p-n junctions,
bipolar and field-effect transistors and other solid state devices. Prerequisite:
EE 202L, Phys 152L.
Textbook:
An introduction to semiconductor devices, Neamen, McGraw Hill 2006
Coordinator:
P. Daniel Dapkus, Professor of Electrical Engineering
Topics:
1. Semiconductor Physics: bands in semiconductors, basic quantum mechanics,
effective mass, doping, density of states, Fermi function, carrier concentration,
drift, diffusion, absorption, recombination lifetime, device fabrication
2. pn junctions: electrostatics, depletion width, built-in potential, qualitative
operation, ideal diode equation, Sah-Noyce-Shockley equation, high injection,
avalanche breakdown, tunneling, AC analysis, Schottky barriers, heterojunctions
3. MOSFETs: MOS capacitor, DC characteristics of MOSFETs, transient
properties
4. Bipolar Junction Transistors: qualitative description, Ebers-Moll model,
deviations from ideal, small-signal equivalent circuits
Course Objectives:
To introduce the student to the role of electronics in modern communications,
computation and entertainment systems. To introduce the student to the physical
models for semiconductor electronic devices and to the application of these
models to the analysis and design of these devices.
Course Outcomes:
The student will be able to:
1. Understand and apply the physical laws relating to carrier statistics in
semiconductors to analyze the density of states, the Fermi function, and the
equilibrium distribution of carriers.
2. Understand and apply the physical laws relating to currents in
semiconductors to analyze drift, diffusion, and recombination-generation
processes.
3. Understand and apply the physical laws relating to a pn junctions, Schottky
junctions and heterojunctions in thermodynamic equilibrium and to the
formation of electric fields in the vacinity of these junctions and their ideal
behavior under reverse bias.
4. Understand and apply the physical laws to analyze the electrostatic
properties of MOS capacitors.
5. Understand and apply the physical laws to analyze the DC characteristics of
a MOSFET.
6. Understand and apply the small-signal equivalent circuit of a MOSFET to
analyze the ac response.
7. Understand and apply the physical laws relating to p;n junctions under
forward bias and their ideal DC current voltage characteristics.
8. Design a pn junction in order to obtain a desired DC current-voltage
characteristic.
9. Understand and identify the major deviations from ideal diode behavior that
occur in pn junctions.
10. Understand and apply the physical laws to analyze the DC characteristics of
a BJT using the Ebers-Moll model.
11. Understand and apply the small-signal equivalent circuit of a BJT to analyze
the ac response.
Laboratory Projects:
none
Relation of the Course Outcomes to the Electrical Engineering Program Outcomes:
Strong: a, c, e, k, l, and n. Moderate: i, j, and o. Weak: b, d, f, g, h, and m.
Prepared by: P. Daniel Dapkus
Date: April 16, 2009