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Basic Electronics Engineering
Multiple Choice Questions
UNIT I
DIODE CIRCUITS
1.The process by which impurities are added to
a pure semiconductor is
a. Diffusing
b. Drift
c. Doping
d. Mixing
a. 5 eV
b. 10 eV
c. 15 eV
d. 1 eV
Ans: c
6.A semiconductor diode has forward resistance
of the order of ……….
a. Ω
b. KΩ
c. MΩ
d. none of the above
2.When an atom gains or losses an ion it is said
to be
a. Ionised
b. Bonded
c. Excited
d. stabilized
Ans: a
3.Barrier potential for silicon diode
a. 0.3
b. 0.4
c. 0.7
d. 0.1
Ans: d
Ans: a
7.The reverse current in a diode is of the order
of …………….
a. µA
b. mA
c. A
d. KA
Ans: a
Ans: c
4.The manufacturer of diode provides the detail
information about diode, in the form of
a. excel sheet
b. Data Sheet
c. Log sheet
d. None of above
Ans: b
5. In a semiconductor, the energy gap between
valence band and conduction band is
about………
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8.A reverse-biased diode acts like
a. open switch
b. closed switch
c. small resistance
d. none of the above
Ans: a
9.The potential barrier at a PN-junction is due
to the charges on either side of the junction.
These charges are…..
a. minority carriers
b. majority carriers
c. both majority and minority carriers
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d. fixed donor and acceptor ions
Ans: d
10.When we apply reverse bias to a junction
diode, it
a. lowers the potential barrier
b. raises the potential barrier
c. greatly increases the minority-carrier current
d. greatly increases the majority-carrier current
Ans: b
11.The turn-on voltage of a Ge junction diode is
nearly….. volts.
a. 0.7
b. 0.3
c. 1
d. 0.1
Ans: b
12.If a pure silicon crystal has one million free
electrons inside it, how many holes does it
have?
a. One million
b. two million
c. zero
d. ten million
Ans: a
13.A strong electric field across a P-N junction
that causes covalent bond to break apart is
called
a. avalanche breakdown
b. reverse breakdown
c. Zener Breakdown
d. Low voltage break down
Ans: c
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Multiple Choice Questions
14.Resistivity of semiconductor depends on…
a. shape of the semiconductor
b. atomic nature of semiconductor
c. width of semiconductor
d. length of semiconductor
Ans : b
15.At room temperature, the current in the
intrinsic semiconductor is due to....
a. Holes
b. electrons
c. Ions
d. holes and electrons
Ans : d
16.If the temperature of an extrinsic
semiconductor is increased so that the intrinsic
carrier concentration is doubled, then
a. The majority carrier density doubles
b. the minority carrier density is doubled
c. the minority carrier density becomes 4 times
the original value
d. both majority and minority carrier densities
double
Ans : c
17.When holes leave the p-material to fill
electrons in the n-material the process is called
a. Mixing
b. Depletion
c. Diffusion
d. Depletion
Ans : c
18.Diffusion current in the diode is caused by
a. Chemical energy
b. heat energy
c. voltage
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Multiple Choice Questions
d. crystal formation
Ans: c
Ans : a
19. Depletion region in a pn diode is due to
a. reverse biasing
b. forward biasing
c. an area created by crystal doping
d. an area void of current carriers
24.Reverse characteristic of diode is plotted in
a. 1st Quadrant
b. 2nd Quadrant
c. 3rd Quadrant
d. 4th Quadrant
Ans: c
Ans: a
20.When a diode is forward biased
a. Barrier potential increases
b. Barrier potential decreases
c. Majority current reduces
d. Minority current reduces
Ans: b
21.The p-n junction forms device called
a. Triac
b. Diode
c. multiplexer .
d. Semiconductor
Ans: b
22.The normal forward biased operation of
diode is
a. Below the knee point
b. at the origin
c. above knee point
d. all the above
Ans: c
23. In diode reverse current is due to
a. Mobile donor ions
b. Mobile acceptor ions
c. minority carriers
d. majority carriers
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25.In an unbiased PN-junction, the junction
current at equilibrium is
a. due to diffusion of minority carriers only
b. due to diffusion of majority carriers only
c. zero, because equal but opposite carriers are
crossing the junction
d. zero, because no charges are crossing the
junction
Ans: c
26.In a PN-junction diode, holes diffuse from
the P region to the N region because
a. the free electrons in the N region attract
them
b. they are swept across the junction by the
potential difference
c. there is greater concentration of holes in the
P region as compared to N region
d. none of the above
Ans: c
27.The number of minority carriers crossing the
junction of a diode depends primarily on the
a. concentration of doping impurities
b. magnitude of the potential barrier
c. magnitude of the forward-bias voltage
d. rate of thermal generation of electron –hole
pairs
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Multiple Choice Questions
Ans: d
28.The forward bias applied to a PN- junction
diode is increased from zero to higher values.
Rapid increase in the current flow for a
relatively small increase in voltage occurs
a. immediately
b. only after the forward bias exceeds the
potential barrier
c. when the flow of minority carriers is sufficient
to cause an avalanche breakdown
d. when the depletion area becomes larger than
the space-charge area
Ans: b
32.The ideal value of forward resistance of
diode is
a. high
b. infinite
c. zero
d. very low
Ans: c
33.Rectifier converts
a. a.c. voltage to d.c.voltage
b. a.c voltage to pulsating d.c voltage
c. d.c voltage to a.c. voltage
d. a.c voltage to a.c voltage
29.If the arrow of a semiconductor diode
symbol is positive w.r.t. bar, then diode
is…..biased.
a. reverse
b. forward
c. none of the two
d. forward or reverse
Ans: b
Ans: b
Ans: b
30.The leakage current in a semiconductor
diode is due to…….
a. minority carriers
b. majority carriers
c. junction capacitance
d. none of the above
Ans: a
35.No. of diodes used in full wave rectifier is
a. 1
b. 2
c. 3
d. 4
31.The ideal value of reverse resistance of diode
is
a. high
b. infinite
c. zero
d. very low
36.In a full-wave rectifier, the current in each of
the diodes flows for
a. the complete cycle of the input signal
b. half cycle of the input signal
c. less than half cycle of the input signal
d. zero time
Ans: b
Ans: b
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34.Efficiency of half wave rectifier is
a. 81.20%
b. 40.60%
c. 45.6 %
d. 82.10%
Ans: b
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Multiple Choice Questions
37.The peak value of the input to a half wave
rectifier is 10V. the approximate peak value of
the output is
a. 10 V
b. 3.18V
c. 10.7V
d. 9.3V
41.What is the dc output voltage of an
unfiltered half-wave rectifier whose peak
output voltage is 9.8 V?
a. 6.23 V
b. 19.6 V
c. 9.8 V
d. 3.1 V
Ans: d
38.The total secondary voltage in a centre
tapped full wave rectifier is 125 V rms.
Neglecting the diode drop, the rms output
voltage is
a. 125V
b. 177V
c. 100V
d. 62.5V
Ans: d
42.If Vm is the peak voltage across the
secondary of the transformer in a half-wave
rectifier(without any filter circuit. , then the
maximum voltage on the reverse biased diode
is
a. Vm
b. ½. Vm
c. 2 Vm
d. none of the above
Ans: d
Ans: a
39. a half-wave rectifier, the peak value of the
ac voltage across the secondary of the
transformer is 20√2 V. If no filter circuit is used,
the maximum dc voltage across the load will be
a. 28.28 V
b. 14.14 V
c. 20 V
d. 9 V
43.If you are checking a 60 Hz full wave bridge
rectifier and observe that the output has 60Hz
ripple
a. the circuit is working properly
b. there is an open diode
c. the transformer secondary is shorted
d. the filter capacitor is leaky
Ans: d
Ans: b
40.What is the frequency of the capacitor ripple
voltage in a full-wave rectifier circuit if the
frequency of the transformer secondary voltage
is 60 Hz?
a. 60Hz
b. 50Hz
c. 120Hz
d. this is impossible to determine
42.Efficiency of half wave rectifier is
a. 81.20%
b. 40.60%
c. 45.60%
d. 82.1 %
Ans: c
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Ans: b
43.Ripple factor of full wave rectifier is
a. 0.122
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b. 0.4
c. 0.48
d. 0.05
Multiple Choice Questions
c. 9.8 V
d. 3.1 V
Ans: d
Ans: c
44.Efficiency of bridge rectifier is
a. 81.2 %
b. 40.6 %
c. 45.60%
d. 82.1 %
Ans: a
48.What is the frequency of the capacitor ripple
voltage in a full-wave rectifier circuit if the
frequency of the transformer secondary voltage
is 60 Hz?
a. 60Hz
b. 50 Hz
c. 120 Hz
d. this is impossible to determine
45.In an unbiased PN-junction, the junction
current at equilibrium is
a. due to diffusion of minority carriers only
b. due to diffusion of majority carriers only
c. zero, because equal but opposite carriers are
crossing the junction
d. zero, because no charges are crossing the
junction
Ans: c
Ans: c
Ans: a
46.If Vm is the peak voltage across the
secondary of the transformer in a full-wave
rectifier with a shunt capacitor filter circuit,
then the maximum voltage on the reverse
biased diode is
a. Vm
b. ½. Vm
c. 2 Vm
d. both A and B
50.What is the approximate dc output voltage
from a filtered bridge rectifier whose peak
output voltage is 30V?
a. 19.1 V
b. 9.5 V
c. 30 V
d. none of the above
Ans: c
51.A half wave rectified sinusoidal waveform
has a peak voltage of 12V. Its average value and
rms value of the fundamental components are;
respectively given by
a. 15/p V, 7.5 V
b. 20/p V, 10/Ö2 V
c. 12/p V, 6 V
47.What is the dc output voltage of an
unfiltered half-wave rectifier whose peak
output voltage is 9.8 V?
a. 6.23 V
b. 19.6 V
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49.The output from an unfiltered half-wave or
full wave rectifier is -a. a pulsating dc
b. steady dc voltage
c. smooth dc voltage
d. none of the above
Ans: c
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Multiple Choice Questions
d. none of these
Ans: c
52.In a bridge rectifier circuit we use
a. no centre-tapping and diode having peak
inverse voltage Vm
b. no centre tapping and diode having inverse
voltage 2Vm
c. centre tapping and diode having reverse
voltage Vm
d. centre- tapping and diode having reverse
voltage 2Vm
55. If Vm is the peak voltage across secondary
of transformer in HWR (without any filter
circuit. ,
then the maximum voltage on reverse biased
diode is
a. Vm
b. 1/2Vm
c. 2Vm
d. none of the above
Ans: a
53.A device converting a.c. to d.c. is called
a. comparator
b. inverter
c. rectifier
d. regulator
56. If Vm is the peak voltage across secondary
of transformer in HWR ,if we use shunt
capacitor filter, the maximum voltage that
occurs on reverse biased diode is
a. Vm
b. 1/2Vm
c. 2Vm
d. none of the above
Ans: c
Ans: a
53. PIV rating of diode in a bridge rectifier is
a. Vm
b. 2Vm
c. Vm/2
d. none of these
57.In Center tap FWR Vm is the peak voltage
between center tap and one end of secondary,
the maximum voltage that occurs on reverse
biased diode is
a. Vm
b. 1/2Vm
c. 2Vm
d. none of the above
Ans: a
Ans: a
54.In HWR the peak value of ac voltage across
secondary of transformer is 20√2 V if no filter
circuit is used, the maximum d.c. voltage across
the load will be
a. 28.28 V
b. 14.14 V
c. 20 V
d. 9 V
Ans: c
58.In HWR the load current flows for
a. the complete cycle of input signal.
b. only for positive half cycle of input signal.
c. less than half cycle of input signal.
d. more than half cycle but lass than complete
cycle of input signal.
Ans: d
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Ans: b
59.What is the dc output voltage of an
unfiltered half-wave rectifier whose peak
output voltage is 9.8 V?
a. 6.23 V
b. 19.6 V
c. 9.8 V
d. 3.1 V
Ans : d
Multiple Choice Questions
63.In a bridge rectifier circuit we use
a. no centre-tapping and diode having peak
inverse voltage Vm
b. no centre tapping and diode having inverse
voltage 2Vm
c. centre tapping and diode having reverse
voltage Vm
d. centre- tapping and diode having reverse
voltage 2Vm
60.What is the frequency of the capacitor ripple
voltage in a full-wave rectifier circuit if the
frequency of the transformer secondary voltage
is 60 Hz?
a. 60Hz
b. 50 Hz
c. 20 Hz
d. this is impossible to determine
Ans : a
Ans: c
Ans: b
61.In a full-wave rectifier, the dc load current
equals 1A. How much dc current is carried by
each diode?
a. ½ A
b. 1 A
c. 2 A
d. 0 A
65.The average value of a half wave rectified
voltage with a peak value of 200V is
a. 63.7V
b. 127.3 V
c. 141V
d. 0V
64.In a full wave rectifier with R-C filter, the
conduction angle
a. 0
b. less than 180
c. Equal to 180
d. More than 0
Ans : a
Ans: a
62.A half wave rectified sinusoidal waveform
has a peak voltage of 12V. Its average value and
rms value of the fundamental components are;
respectively given by
a. 15/p V, 7.5 V
b. 20/p V, 10/Ö2 V
c. 12/p V, 6 V
d. none of these
66.When a 60 Hz sinusoidal voltage is applied to
the input of a half wave rectifier, the output
frequency is
a. 120 Hz
b. 30 Hz
c. 60 Hz
d. 0 Hz
Ans : c
Ans: c
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Multiple Choice Questions
67.The peak value of the input to a half wave
rectifier is 10V. the approximate peak value of
the output is
a. 10 V
b. 3.18 V
c. 10.7 V
d. 9.3 V
71.When the peak output voltage is 100V, the
PIV for each diode in a centre- tapped full wave
rectifier is( neglecting the diode drop.
a. 100 V
b. 200 V
c. 141 V
d. 50V
Ans :d
Ans : b
68.The average value of full wave rectified
voltage with a peak value of 75V is
a. 53 V
b. 47.8 V
c. 37.5 V
d. 23.9 V
72.When the rms output voltage of a bridge
full-wave rectifier is 20V, the peak –inverse
voltage across the diodes is ( neglecting the
diode drop.
a. 20 V
b. 40 V
c. 28.3 V
d. 56.6 V
Ans :b
9.When a 60Hz sinusoidal voltage is applied to
the input of a full wave rectifier, the output
frequency is
a. 120 Hz
b. 60 Hz
c. 240 Hz
d. 0 V
Ans : a
70.The total secondary voltage in a centre
tapped full wave rectifier is 125 V rms.
Neglecting the diode drop, the rms output
voltage is
a. 125V
b. 177 V
c. 100 V
d. 62.5 V
Ans : c
73.A 60 V peak full wave rectified voltage is
applied to a capacitor input filter. If f=120 Hz, RL
=10K
a. 0.6 V
b. 6 mV
c. 5 V
d. 2.88 V
Ans : d
74.If one of the diodes in a bridge full wave
rectifier opens, the output is
a. 0V
b. one-fourth the amplitude of the input
voltage
c. a half wave rectified voltage
d. a 120Hz voltage
Ans : d
Ans : c
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75.If you are checking a 60 Hz full wave bridge
rectifier and observe that the output has 60Hz
ripple
a. the circuit is working properly
b. there is an open diode
c. the transformer secondary is shorted
d. the filter capacitor is leaky
Ans : b
76.With a half wave rectified voltage across the
load resistor, load current flows for what part of
a cycle?
a. 0 degree
b. 90 degree
c. 180 degree
d. 360 degree
Ans : c
77.Suppose line voltage may be as low as 105 V
rms or as high as 125 V rms in a half wave
rectifier. With a 5 : 1 step down transformer,
the minimum peak load voltage is closest to
a. 21 V
b. 25 V
c. 29.7 V
d. 35.4 V
Ans : c
78.The voltage out of a bridge rectifier is a
a. half wave signal
b. full wave signal
c. bridge rectified signal
d. sine wave
Ans : b
79.What is the peak load voltage in a full wave
rectifier if the secondary voltage is 20 V rms?
a. 0 V
b. 0.7 V
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Multiple Choice Questions
c. 14.1 V
d. 28.3 V
Ans : c
80.We want a peak load voltage of 40 V out of a
bridge rectifier. What is the approximate rms
value of secondary voltage?
a. 0 V
b. 14.4 V
c. 28.3 V
d. 56.6 V
Ans : c
81.With a full wave rectified voltage across a
load resistor, load current flows for what part of
a cycle?
a. 0 degree
b. 90 degree
c. 180 degree
d. 360 degree
Ans : d
82.With the same secondary voltage and filter,
which of the following has the most ripple?
a. half wave rectifier
b. full wave rectifier
c. bridge rectifier
d. impossible to say
Ans : a
83.With the same secondary voltage and filter
which of the following produces the least load
voltage?
a. half wave rectifier
b. full wave rectifier
c. bridge rectifier
d. impossible to say
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Multiple Choice Questions
Ans : a
Ans : a
84.If the filtered load current is 10 mA, which of
the following has a diode current of 10 mA?
a. half wave rectifier
b. full wave rectifier
c. bridge rectifier
d. All above
89.Ripple factor of full wave rectifier is
a. 0.122
b. 0.4
c. 0.48
d. 0.05
Ans : d
Ans : c
85.The diodes in a bridge rectifier each have a
maximum dc current rating of 2 A. this means
the dc load current can have maximum value of
a. 1 A
b. 2 A
c. 4 A
d. 8 A
90.Efficiency of bridge rectifier is
a. 81.2 %
b. 40.6 %
c. 45.6 %
d. 82.1 %
Ans : b
91.Ripple factor of bridge rectifier is
a. 0.122
b. 0.4
c. 0.48
d. 0.05
86.Efficiency of half wave rectifier is
a. 81.2 %
b. 40.6 %
c. 45.6 %
d. 82.1 %
Ans : b
87.Ripple factor of half wave rectifier is
a. 2.122
b. 1.112
c. 1.211
d. 2.11
Ans : a
Ans : c
92.In a full-wave rectifier, the current in each of
the diodes flows for
a. the complete cycle of the input signal
b. half cycle of the input signal
c. less than half cycle of the input signal
d. zero time
Ans : b
Ans : c
88.Efficiency of full wave rectifier is
a. 81.2 %
b. 40.6 %
c. 45.6 %
d. 82.1 %
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93.To minimize the ripple content in the circuit
a. Diode circuit is used
b. filter circuit is used
c. bridge circuit is used
d. none of the above
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Ans: b
94.What is the frequency of the capacitor ripple
voltage in a full-wave rectifier circuit if the
frequency of the transformer secondary voltage
is 60 Hz?
a. 60Hz
b. 50Hz
c. 120Hz
d. this is impossible to determine
Ans: c
95.The ideal dc output voltage of a capacitor
input filter is equal to
a. the peak value of the rectified voltage
b. the average value of the rectified voltage
c. the rms value of the rectified voltage
d. none of the above
Ans: a
96.A certain power supply filter produces an
output with a ripple of 100 mV peak-to-peak
and dc value of 20V. the ripple factor is
a. 0.05
b. 0.005
c. 0.0005
d. 0.02
Multiple Choice Questions
c. changes in load resistance and input voltage
d. changes in zener current and load current
Ans: d
99.If you are checking a 60 Hz full wave bridge
rectifier and observe that the output has 60Hz
ripple
a. the circuit is working properly
b. there is an open diode
c. the transformer secondary is shorted
d. the filter capacitor is leaky
Ans: b
100. Types of filter are
a. Capacitor input filter
b. choke input filter
c. resister input filter
d. both A and B
Ans: d
101. Due to large........, capacitor holds its entire
charge.
a. charging current
b. time constant
c. discharging current
d. none of these
Ans: b
Ans: b
97.Line regulation is determined by
a. load current
b. zener current and load current
c. changes in load resistance and output voltage
d. changes in output voltage and input voltage
Ans: d
98.Load regulation is determined by
a. changes in load current and input voltage
b. changes in load current and output voltage
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102. Due to the ........time constant the
capacitor holds its entire charge.
a. zero
b. negative
c. very large
d. unity
Ans: c
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103. For a HWR using RL=1500Ω, a capacitor
filter is used with C=100µF then its ripple factor
at 50HZ is.......
a. 0.115
b. 0.577
c. 0.0288
d. 0.0385
Ans: d
104. For a FWR using RL=1000Ω, a capacitor
filter is used with C=100µF then its ripple factor
at 50HZ is.......
a. 0.115
b. 0.577
c. 0.0288
d. 0.0385
Ans: c
105. In a HWR using capacitor filter of 50µF,
Esm=42V and Idc=2 mA then its output d.c.
voltage is...........V.
a. 41.6
b. 42
c. 41.8
d. 55
Ans: a
106. In a FWR using capacitor filter of 50µF,
Esm=42V and Idc=2 mA then its output d.c.
voltage is...........V.
a. 41.6
b. 42
c. 41.8
d. 55
Ans: c
107. As load resistance increases, the ripple
factor of capcitor filter...........
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Multiple Choice Questions
a. decreases
b. increases
c. remains constant
d. none of these
Ans: a
108. As the value of filter capacitor decreases,
the ripple factor of capacitor filter........
a. decreases
b. increases
c. both a and b
d. None of the above
Ans: b
109. As the value of filter capacitor increases,
the ripple factor of capacitor filter........
a. decreases
b. increases
c. both a and b
d. None of the above
Ans: a
110. As load resistance decreases, the ripple
factor of capcitor filter...........
a. decreases
b. increases
c. remains constant
d. none of these
Ans: b
111. As the value of filter
increases..............
a. ripple factor increases
b. initial surge current increases
c. regulation increases
d. all of these
capacitor
Ans:b
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Basic Electronics Engineering
111. A capacitor of 470µF is used as filter for a
FWR using maximum input voltage of 30V at 50
HZ. Then its output d.c. voltage is.....V if
RL=100Ω.
a. 35.55
b. 25.94
c. 27.96
d. 39.54
Multiple Choice Questions
115. The output d.c. voltage of a rectifier using
a capacitor filter is 20V while its ripple factor is
2.88% then the r.m.s. value of ripple voltage is ..
a. 0.288
b. 0.576
c. 0.347
d. 0.144
Ans: b
Ans: c
112. A capacitor of 470µF is used as filter for a
HWR using maximum input voltage of 30V at 50
HZ. Then its output d.c. voltage is.....V if
RL=100Ω.
a. 35.55
b. 25.94
c. 27.96
d. 39.54
116. If the rms value of ripple voltage is 0.2886V
then peak to peak value of the ripple voltage
is.........V assuming triangular nature of the
ripple voltage.
a. 0.204
b. 0.408
c. 0.5
d. 1
Ans: b
Ans: b
113. A capacitor of 100µF is used as a filter for
HWR supplying a load of RL=1000Ω then ripple
factor is............
a. 0.002
b. 0.048
c. 0.0355
d. 0.0577
Ans: d
114. A capacitor of 470µF is used as a filter for
bridge rectifier supplying a load of RL=1000Ω
then ripple factor is............
a. 0.0288
b. 0.00614
c. 0.00355
d. 0.00577
117. In a filter circuit ........is always connected
in series with the load.
a. resistor
b. inductor
c. capacitor
d. none of these
Ans: b
118. Ripple factor ..............as the value of filter
capacitor increases.
a. remains same
b. decreases
c. increases
d. none of these
Ans: b
Ans: b
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119. The ripple factor for the capacitor filter is
............for FWR.
a. 1/4√3fCRL
b. 1/2fCRL
c. 1/2πfCRL
d. 1/πfCRL
Ans: a
120. The ripple factor for the capacitor filter is
............for HWR.
a. 1/4√3fCRL
b. 1/2fCRL
c. 1/2πfCRL
d. 1/2√3fCRL
Ans: d
121.The ripple factor for the capacitor filter is
............for Bridge FWR rectifier.
a. 1/4√3fCRL
b. 1/2fCRL
c. 1/2πfCRL
d. 1/2√3fCRL
Ans: a
122. If looking from the rectifier side, the first
element in the filter is a capacitor then it is
called ........filter.
a. Choke input
b. capacitor
c. π
d. RC
Ans: b
123. In a filter circuit ........is always connected
in parallel with the load.
a. resistor
b. inductor
c. capacitor
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Multiple Choice Questions
d. none of these
Ans: c
124. For FWR with capacitor filter, diode
conducts for .......half cycle.
a. less than
b. more than
c. equal to
d. none of these
Ans: a
125. The circuits used to remove unwanted
portion of waveform without disturbing the
remaining part are called..........
a. clampers
b. clippers
c. chopper
d. integrator
Ans: b
126. The clipper circuits are also called as .........
a. filters
b. rectifiers
c. limiters
d. integrators
Ans: c
127. In a clamper,.........is necessary in addition
to a diode.
a. transistor
b. inductor
c. capacitor
d. none of these
Ans: c
128.One of the application of zener diode is
a. Clipper
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Basic Electronics Engineering
b. Clamper
c. Voltage regulator
d. all above
Multiple Choice Questions
c. Clipper
d. Regulator
Ans: b
Ans: c
129. Clipper circuit are used for
a. rectification
b. Removing part of wave form
c. Shiftingof DC level
d. All
134.Series Negative clipper will clip off
a. positive half cycle of i/p
b. both half cycle of i/p
c. negative half cycle of i/p
d. none
Ans: c
Ans: b
130.Clamper circuit are used for
a. rectification
b. Removing part of wave form
c. Shifting of DC level
d. All
135. Negative clampers add a DC voltage to the
AC input
a. Positive
b. negative
c. zero
d. both
Ans: c
Ans: b
131. Positive clampers adds...............DC voltage
to the AC input
a. Positive
b. negative
c. zero
d. both
136. Series Positive clipper will clip off
a. positive half cycle of i/p
b. both half cycle of i/p
c. negative half cycle of i/p
d. none
Ans: a
Ans: a
132.The basic circuit of half wave doubler is
a. Clamper
b. Rectifier
c. Clipper
d. Regulator
137. In a series clipper, ............is connected inn
series with load.
a. Diode
b. inductor
c. transistor
d. capacitor
Ans: a
Ans: a
133. The basic circuit of full wave doubler is
a. Clamper
b. Rectifier
138. In a.......... Clipper, a diode is connected in
parallel with the load.
a. series
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Basic Electronics Engineering
b. combinational
c. parallel
d. two way
Ans: c
139. A negative clipper clips off...........portion of
the input waveform.
a. positive
b. negative
c. peak
d. none of these
Ans: b
140. A positive clipper clips off...........portion of
the input waveform.
a. positive
b. negative
c. peak
d. none of these
Ans: a
141. In a series clipper, for a clipping region, the
diode must be in ...........condition.
a. forward biased
b. reverse biased
c. none of these
d. a and b
Ans: b
142. In a series clipper, for a transmitting
region, the diode must be in ...........condition.
a. forward biased
b. reverse biased
c. none of these
d. a and b
Ans: a
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Multiple Choice Questions
143. In a series clipper, the slope of the transfer
characteristics in transmitting region is............
a. zero
b. unity
c. infinite
d. negative
Ans: b
144. In a series clipper, the slope of the transfer
characteristics in clipping region is............
a. zero
b. unity
c. infinite
d. negative
Ans: a
145. In a parallel clipper, Vo = Vin can be
obtained
in
transmitting
region
by
making............
a. R1>>RL
b. R1=RL
c. R1<<RL
d. none of these
Ans: c
146. In a combinational clipper, when both the
diodes are off, it produces ...........action.
a. clipping
b. transmitting
c. exponential
d. none of these
Ans: b
147. In a ............clamper, the capacitor gets
charged during first quarter of the negative
cycle of the input.
a. positive
b. negative
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Basic Electronics Engineering
c. combinational
d. two way
Ans: a
148. In a ............clamper, the capacitor gets
charged during first quarter of the positive cycle
of the input.
a. positive
b. negative
c. combinational
d. two way
Ans: b
149. Once charged to peak value, a capacitor
acts as .........in a clamper.
a. filter
b. multiplier
c. battery
d. rectifier
Ans: c
150. In a clamper, the analysis must start
considering that part of the input which .........
a. reverse biases the diode
b. forward biases the diode
c. discharges the capacitor
d. none of these
Ans: b
151. ...........is assumed in the clamper.
a. capacitor charges exponentially and
discharges instantly.
b. capacitor charges instantly and discharges
instantly.
c. capacitor charges instantly and does not
discharge at all.
d. capacitor charges exponentially and
discharges exponentially.
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Multiple Choice Questions
Ans: c
152. ---------- is action used in multiplier.
a. clipping
b. Clamping
c. rectifying
d. slicing
Ans: b
153.In a half wave voltage doubler, the
capacitor charges in ------------a. alternate half cycle
b. each half cycle
c. first positive half cycle
d. none of these
Ans: a
154.The voltage regulation of multipliers is
a. very good
b. poor
c. zero
d. none of these
Ans: b
155. --------- is not required in Voltage
multipliers
a. Center tap transformer
b. Diode
c. Capacitor
d. None of these
Ans: a
156.PIV of diode in Full wave doubler is
a. Vm
b. 2Vm
c. 3Vm
d. none
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Multiple Choice Questions
Ans: b
Ans: a
157.The basic circuit of half wave doubler is
a. Clamper
b. Rectifier
c. Clipper
d. Regulator
162.A 12 V zener diode has a 1W power rating.
What is the maximum rated zener current?
a. 120 mA
b. 83.3 mA
c. 46.1 mA
d. 1A
Ans: a
Ans: b
158.The zener diode is generally operated in
a. Forward breakdown region
b. reverse breakdown region
c. middle breakdown region
d. all above
Ans: b
159.One of the application of zener diode is
a. Clipper
b. Clamper
c. Voltage regulator
d. all above
Ans: c
160.A zener diode………
a. has a high forward-voltage rating
b. has a sharp breakdown at low reverse
voltage
c. is useful as an amplifier
d. has a negative resistance
Ans: b
161.The doping level in a zener diode is ….. that
of a semiconductor diode.
a. more than
b. less than
c. the same as
d. none of the above
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163.A general purpose diode is more likely to
suffer avalanche breakdown rather than zener
breakdown because
a. its leakage current is small
b. it has weak covalent bonds
c. it is lightly doped
d. it has low reverse resistance
Ans: c
164.Once a zener diode goes into breakdown,
its ……….doesn’t change much
a. voltage
b. current
c. dynamic impedance
d. capacitance
Ans: a
165.Load regulation is determined by
a. changes in load current and input voltage
b. changes in load current and output voltage
c. changes in load resistance and input voltage
d. changes in zener current and load current
Ans: b
166.For a certain 12 V zener diode, a 10 mA
change in zener current produces a 0.1 V
change in zener voltage. The Zener impedance
for this current range is
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Basic Electronics Engineering
a. 1 W
b. 100 W
c. 10 W
d. 0.1 W
Ans: c
167.If the load resistance increases in a zener
regulator, the zener current
a. decreases
b. stays the same
c. increases
d. equals the source voltage divided by the
series resistance
Ans: c
168.Practically zener diodes are operated in
a. Forward breakdown region
b. reverse breakdown region
c. middle breakdown
d. all above
Ans: b
169.A zener diode has…………..
a. one pn-junction
b. two pn-junctions
c. three pn-junctions
d. none of the above
Ans: a
170.A zener diode is operated in the following
mode as a voltage stabilizer
a. reverse bias
b. forward bias
c. beyond the breakdown region
d. reverse bias around the knee of breakdown
region
Ans: d
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Multiple Choice Questions
171.For a certain 12 V zener diode, a 10 mA
change in zener current produces a 0.1 V
change in zener voltage. The Zener impedance
for this current range is
a. 1 ohm
b. 100 ohm
c. 10 ohm
d. 0.1 ohm
Ans: b
172.An optical diode which emits light when
forward biased is
a. LED
b. LCD
c. TFT
d. None of above
Ans: a
173.The color of emitted light decided by
a. Semiconductor material
b. Wavelength
c. type
d. all above
Ans: a
174.The approximate voltage drop across a
forward- biased LED is
a. 0.3 V
b. 0.7 V
c. 5.6 V
d. 2.0 V
Ans: d
175.LEDs have replaced incandescent lamps in
many applications because they have…….
a. a lower operating voltage
b. a longer life
c. . faster on-off switching
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Basic Electronics Engineering
d. all the advantages as a, b,c,d
Ans: d
176. A display using seven LEDs is called
a. bar graph display
b. seven segment display
c. matrix display
d. none of these
Multiple Choice Questions
180.As compared to a silicon rectifier diode, an
LED has a
a. lower forward voltage and lower breakdown
voltage
b. lower forward voltage and higher breakdown
voltage
c. higher forward voltage and lower breakdown
voltage
d. higher forward voltage and higher
breakdown voltage
Ans: b
Ans: c
177. Which of the following group of letters can
be displayed on seven segment display?
a. A,C
b. b,d
c. F,C
d. all of these
181.Types of seven segment display are
a. Common anode type
b. common gate type
c. common cathode type
d. both A and B
Ans: d
Ans: d
178.The internal resistance of a photodiode
a. increases with light intensity when reverse
biased
b. decreases with light intensity when reverse
biased
c. increases with light intensity when forward
biased
d. decreases with light intensity when forward
biased
182.An infrared LED is optically coupled to a
photodiode. When the LED is turned off, the
reading on an ammeter in series with the
reverse biased photodiode will
a. not change
b. decrease
c. increase
d. fluctuate
Ans: b
Ans:b
179.To display the digit 0 in a seven segment
indicator
a. C must be off
b. G must be off
c. F must be on
d. all segments must be lighted
Ans: b
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183. The semiconductor material used for LED is
a. Gallium Arsenide
b. gallium bromide
c. Silicon
d. Germanium
Ans: a
184. The graph of ____ is called spectral
response of LED.
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a. Forward Voltage Vs wavelength
b. Current Vs forward voltage
c. current Vs forward voltage
d. light output Vs wavelength
Multiple Choice Questions
b. forward biased
c. parallel with load
d. none of these
Ans: a
Ans: d
185. The LED emits light when_______biased.
a. reverse
b. unbiased
c. forward
d. none of these
190. _______ is always operated in reverse
biased condition.
a. LED
b. Photodiode
c. Transistor
d. Rectifier
Ans: d
Ans: b
186. The LED works on the principle of
a. fluroscence
b. hall effect
c. electroluminescene
d. none of these
191. The current in photodiode increases as the
light intensity.
a. remains same
b. decreases
c. increases
d. none of these
Ans: c
Ans: c
187. GaAsP LEDs are used to produce
__________ color light.
a. red
b. green
c. orange
d. white
192. The dark current in photodiode is due to
________ charge carriers.
a. majority
b. minority
c. both the
d. none of these
Ans: a
188. The ______controls the brightness of LED.
a. Forward voltage
b. Forward current
c. Materal used
d. none of these
Ans: b
193. The photodiode is _______ device.
a. photoemitter
b. photorejector
c. photodetector
d. none of these
Ans: b
Ans: d
189. A photodiode operates in __ condition.
a. reverse biased
194. The luminous efficiency of LEDs is _____.
a. high
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Multiple Choice Questions
b. low
c. zero
d. none of these
b. reverse current
c. intensity of light
d. none of these
Ans: b
Ans: c
195. The luminous efficiency of LEDs is
measured in ______ .
a. lumens/watt
b. watts/lumen
c. lumens/degree C
d. lumens/ampere
200. The intensity of light is measured in
______ .
a. Lm/A
b. Lm/W
c. Lm/w2
d. Lm/m2
Ans: a
Ans: d
196. _______ is used in optocouplers.
a. Zener
b. LED
c. SCR
d. Transformer
201. The photodiode characteristics lies in
_____ quadrant.
a. first
b. second
c. third
d. fourth
Ans: b
Ans: c
197. The photodiode current under no light is
called _______ current.
a. forward
b. maximum
c. dark
d. none of these
202. The current is photodiode is due to ______
carriers.
a. majority
b. minority
c. both
d. none of these
Ans: c
198. The dark current of photodiode is always
a. large
b. very small
c. zero
d. infinite
Ans: b
203. The LED is _______ device.
a. photoemitter
b. photorejector
c. photodetector
d. none of these
Ans: b
Ans: a
199. Photo current is directly proportional to __
a. forward current
204. A photodiode converts _____ .
a. light energy into chemical energy
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Multiple Choice Questions
b. chemical energy into electrical energy
c. light energy into electrical energy
d. electrical energy into light energy
Ans: c
205. A LED converts ___ .
a. light energy into chemical energy
b. chemical energy into electrical energy
c. light energy into electrical energy
d. electrical energy into light energy
Ans: d
UNIT II
Bipolar Junction Transistor (BJT Circuits)
Structure, operation and Biasing
1. Transistor is a _________ terminal device.
a. Two
b. Three
c. Four
d. both (a. and (b.
a.
b.
c.
d.
transfer resistor
trans resistor
tri resistor
none of the above
Ans: a
Ans: b
2. The three terminals of transistor are:
a. Gate, collector and emitter
b. Collector, base and source
c. Base, collector and emitter
d. Base, gate and collector
4. BJT is a ______ device.
a. unipolar
b. bipolar
c. multipolar
d. both b and c
Ans: b
Ans: c
3. The transistor means ______ .
5. In Unipolar transistor, the current conduction
is due to _________ .
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a. minority carriers
b. majority carriers
c. both minority and majority carriers
d. all of the above
Ans: b
Multiple Choice Questions
c. doping
d. mixing
Ans: c
6. In bipolar transistor, the current is due to
a. holes
b. electrons
c. both holes and electrons
d. all of the above
11. Base of the transistor is always ___ and
____ doped.
a. thick, lightly
b. thin, lightly
c. thin, heavily
d. none of the above
Ans: c
Ans: b
7. BJT IS __________ controlled device.
a. field
b. voltage
c. resistor
d. current
12. The collector of a transistor is ______
doped.
a. heavily
b. moderately
c. lightly
d. none of the above
Ans: d
Ans: a
8. The types of bipolar junction transistors are
a. ppn,npn
b. pnp, npn
c. npp, ppn
d. nnp, pnp
Ans: b
9. The middle region of a transistor is called __
a. base
b. collector
c. emitter
d. none of the above
Ans: a
10. The process by which impurities are added
to a pure semiconductor is
a. Diffusing
b. drift
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13. In transistors the collector region is larger
than the emitter region for ______.
a. better heat dissipation
b. higher value of ß
c. better amplification
d. all of the above
Ans: a
14. Doping concentration is highest in ________
of a BJT.
a. emitter region
b. collector region
c. base region
d. all of the above
Ans: a
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Basic Electronics Engineering
15. The ______ region has highest thickness
than all other regions in a BJT.
a. base
b. collector
c. emitter
d. all of the above
Ans: b
16. The arrow in the transistor symbol indicates
the direction of ____.
a. conventional emitter current
b. electron current in emitter
c. supply current
d. both a and b
Ans: a
17. The arrow in the transistor symbol indicates
_______ terminal.
a. base
b. collector
c. emitter
d. none of the above
Ans: c
18. Transistor has _______ pn junctions.
a. one
b. two
c. three
d. none of the above
Ans: b
19. The depletion region at emitter junction in
an unbiased transistor extends more into the
_____ region.
a. collector
b. base
c. emitter
d. none of the above
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Multiple Choice Questions
Ans: b
20. The depletion region at collector junction in
an unbiased transistor extends more into the
base region because it is _______ doped.
a. heavily
b. moderately
c. lightly
d. none of the above
Ans: c
21. Barrier voltage is _____ on the N side.
a. positive
b. negative
c. zero
d. none of the above
Ans: a
22. _______ of electrons and holes in the base
region consists the base current.
a. Ionization
b. Recombinations
c. Thermal agitation
d. None of the above
Ans: b
23. ________ constitute the dominant current
in a npn transistor.
a. Holes
b. Electrons
c. Both holes and electrons
d. none of the above
Ans: c
24. The current gain of a transistor is defined as
the ratio of the collector current to the _____.
a. base current
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Basic Electronics Engineering
Multiple Choice Questions
b. emitter current
c. supply current
d. collector current
d. largest for collector region
Ans: a
29. When NPN transistor is used as amplifier
a. electrons move from base to emitter
b. electrons move from emitter to base
c. electrons move from collector to base
d. holes move from base to emitter
25. A transistor __________.
a. is similar to a relay in that it uses a small
amount of current to
control a larger amount of current flow.
b. has three connections called the base,
emitter and collector
c. is like a switch in that it is used to turn a
circuit on and off
d. all of the above
Ans: d
26. The graph of current gain versus collector
current indicates that the current gain _______.
a. is constant
b. varies slightly
c. varies significantly
d. equals the collector current divided by the
base current
Ans: b
27. _______ is the highest current in any bipolar
transistor.
a. IB
b. IC
c. IE
d. none of the above
Ans: c
28. The concentration of impurities in a
transistor:
a. equal for emitter, base and collector
b. least for emitter region
c. largest for emitter region
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Ans: c
Ans: b
30. The base is made thin and lightly doped
because
a. about 95% of the charge carriers may cross
b. about 100% of the charge carriers may cross
c. the transistors can be saved from large
currents
d. none of these
Ans: a
31. Base to emitter voltage in forward biased
transistor decreases with the increase of
temperature at the following rate:
a. 2.5 mV/degree C
b. 25 mV/degree C
c. 0.25 mV/degree C
d. 0.6 mV/degree C
Ans: a
32. No. of depletion layers in a transistor are __
a. two
b. three
c. four
d. none of the above
Ans: a
33. The emitter of a transistor is _____ doped.
a. moderately
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Basic Electronics Engineering
Multiple Choice Questions
b. heavily
c. lightly
c. less than 1
d. 0
Ans: b
34. The input impedance of a transistor is ____
as compared to MOSFET.
a. low
b. high
c. very high
d. none of above
Ans: a
39. Transistor biasing
condition.
a. ac
b. dc
c. both ac and dc
d. none of the above
Ans: a
Ans: b
35. In an NPN transistor, ______ are the
minority carrier.
a. electron
b. holes
c. donor ions
d. acceptor ions
40. Transistor biasing is generally provided by a
________.
a. biasing circuit
b. biasing battery
c. diode
d. none of the above
Ans: b
Ans: a
36. In a transistor _____.
a. IB=IC+IB
b. IC=IE+IB
c. IE=IC+IB
d. IE=IC-IB
41. The point of intersection of DC and AC load
lines represents _______.
a. current point
b. operating point
c. voltage gain
d. none of the above
represents
____
Ans: c
Ans: b
37. The value of alpha of a transistor is
________.
a. 0
b. 1
c. more than 1
d. less than 1
Ans: d
38. The value of ß of a transistor is ________.
a. between 20 and 500
b. 1
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42. The phase difference between the input and
output voltage in a common base arrangement
is ________.
a. 90
b. 180
c. 0
d. none of the above
Ans: c
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Basic Electronics Engineering
43. The phase difference between the input and
output voltage in a common emitter
arrangement is ________.
a. 0
b. 180
c. 90
d. 270
Ans: b
44. The phase difference between the input and
output voltage in a common collector
arrangement is ________.
a. 0
b. 90
c. 180
d. 270
Ans: a
45. The early effect in a bipolar transistor is
caused by:
a. Large collector-base reverse bias
b. base width modulation
c. large emitter-base forward bias
d. increase in junction temperature
Ans: b
46. The _____ current of a transistor is neither
the largest nor the smallest.
a. Base
b. Collector
c. emitter
d. none of the above
Ans: b
47. Which of the following currents are nearly
equal to each other?
a. IB and IC
b. IE and IC
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Multiple Choice Questions
c. IB and IE
d. Ib,IC and IE
Ans: b
48. For a properly biased transistor, let
IC=10mA and Ie=10.2mA. What is the level of
IB?
a. 0.2A
b. 200mA
c. 200µA
d. 20.2mA
Ans: c
49. Holes flow constitutes the dominant current
in a _______ transistor.
a. npn
b. pnp
c. a and b
d. none of the above
Ans: b
50. When the collector current increases, what
does the current gain do?
a. decreases
b. stays the same
c. increases
d. any of the above
Ans: c
51. When the base resistor increases, the
collector voltage will probably ________.
a. decrease
b. stays the same
c. increase
d. do all of the above
Ans: c
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Basic Electronics Engineering
52. If the base resistor is very small, the
transistor will operate in the _______.
a. cut off region
b. active region
c. saturation region
d. all of the above
Ans: c
53. Ignoring the bulk resistance of the collector
diode, the collector-emitter saturation voltage
is _____.
a. 0V
b. a few tenths of a volt
c. 1V
d. supply voltage
Ans: a
54. For common base transistor teh numerical
value is least for _______.
a. voltage gain
b. power gain
c. resistance gain
d. current gain
Multiple Choice Questions
b. reverse
c. zero
d. none of the above
Ans: a
57. In which region are both the collector-base
and base-emitter junctions forward biased for
BJT?
a. active
b. cut-off
c. saturation
d. all of the above
Ans: c
58. For the BJT to operate in the saturation
region, the base-emitter juntion must be
______ biased and the base-collector junction
must be ________.
a. forward, forward
b. forward, reverse
c. reverse, reverse
d. reverse, forward
Ans: a
Ans: d
55. For operating in the active region, the
emitter junction should be _____ biased and
collector junction should be ____ biased in
BJT.
a. forward, forward
b. reverse, reverse
c. forward, reverse
d. reverse, forward
Ans: c
56. The emitter junction is ____ biased for
operating BJT in saturation region.
a. forward
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59. At what region of operation is the baseemitter junction forward biased and the basecollector junction reverse biased for BJT?
a. saturation
b. linear or active
c. cut-off
d. none of the above
Ans: b
60. The transistor acts as an amplifier in the
______ region.
a. Cut off
b. Active
c. Saturation
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Basic Electronics Engineering
d. None of the above
Ans: b
61. When there is no base current in a
transistor switch, then output voltage from the
transistor is ____.
a. low
b. high
c. unchanged
d. unknown
Ans: b
62. A circuit with a fixed emitter current is
called ______.
a. base bias
b. emitter bias
c. transistor bias
d. two supply bias
Ans: b
63. The first step in analyzing emitter-based
circuits is to find the ________.
a. base current
b. emitter current
c. supply current
d. collector current
Ans: b
64. If the current gain is unknown in an emitterbiased circuit, you cannot calculate the _____.
a. emitte voltage
b. emitter current
c. collector current
d. base current
Ans: d
Sinhgad College of Engineering
Multiple Choice Questions
65. If the emitter resistor is open, teh collector
voltage is ________.
a. low
b. high
c. unchanged
d. unknown
Ans: b
66. If the collector resistor is open, the collector
voltage is _______.
a. low
b. high
c. unchanged
d. unknown
Ans: a
67. When the current gain increases from 50 to
300 in an emitter-biased circuit, the collector
current ________.
a. remains almost the same
b. decreases by a factor of 6
c. increases by a factor of 6
d. is zero
Ans: a
68. If the emitter resistance increases, the
collector voltage ______.
a. decreases
b. stays the same
c. increases
d. breaks down the transistor
Ans: c
69. When using a DMM (Digital multimeter) to
test a transistor, an approximate reading
of 0.7V will be found with how many polarity
connections?
a. One
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Basic Electronics Engineering
b. Two
c. Three
d. None
Multiple Choice Questions
a.
b.
c.
d.
high, high
low, low
low, high
high, low
Ans: b
Ans: c
70. What DMM polarity connection is needed
on an npn transistor's base to get a 0.7V
reading?
a. positive
b. negative
c. either positive or negative
d. unknown
74. We can not operate the transistor in ______
region for the switching applications.
a. cut-off
b. active
c. saturation
d. all of the above
Ans: a
Ans: b
71. When testing an npn transistor using an
ohmmeter, the collector-emitter resistance
will be low when ________.
a. The collector is positive in respect to the
emitter
b. The emitterr is positive in respect to the
collector
c. The transistor is normal
d. The transistor is defective
Ans: d
72. The transistor is operated as a open switch
in ______ region.
a. Cut off
b. Active
c. Saturation
d. None of the above
Ans: a
73. The transistor may be used as a switch so
that when it is in the saturated state its on
resistance is very _______ and in the cut-off
state its off resistance is very ________.
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75. The transistor is operated as a close switch
in ______ region.
a. cut-off
b. active
c. saturation
d. all of the above
Ans: c
76. Transistor is used as a switch in ______.
a. an amplifier
b. logic gate
c. linear DC power supply
d. none of the above
Ans: b
77. Which of the following configurations can a
transistor set up?
a. common base
b. common emitter
c. common collector
d. all of the above
Ans: d
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Basic Electronics Engineering
78. In CB configuration a reverse biased
collector junction IC=_____ when the emitter is
left open.
a. 0
b. IE
c. ICBO
d. none of the above
Multiple Choice Questions
83. The alpha dc is always ________ .
a. unity
b. less than unity
c. greater than unity
d. none of the above
Ans: b
Ans: c
79. ICBO flows from _______ to ________when
emitter is open.
a. collector, base
b. base, collector
c. collector, emitter
d. none of the above
Ans: a
80. The ______ carriers constitute current ICBO.
a. both minority and majority
b. minority
c. majority
d. none of the above
84. The collector current is 1.5mA. If the current
gain is 50, the base current is ______.
a. 3 µA
b. 30 µA
c. 150 µA
d. 3 mA
Ans: b
85. The base current is 50µA. If the current gain
is 100, the collector current is closest in value to
a. 50µA
b. 500µA
c. 2mA
d. 5mA
Ans: b
Ans: d
81. ICBO current is _____.
a. greater than IC
b. increases with termperature
c. less than ICO
d. flows when base junction is forward biased
86. a=_______ .
a. IB/IE
b. IC/IE
c. IC/IB
d. none of the above
Ans: b
Ans: b
82. With rise in temperature ICBO ____.
a. increases linearly
b. doubles at every 10 degree celcius
c. decreases linearly
d. none of the above
Ans: b
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87. smaller the thickness of base, _______ is the
value of alpha dc.
a. smaller
b. larger
c. constant
d. none of the above
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Basic Electronics Engineering
Multiple Choice Questions
Ans: b
88. The a is the current gain of ___
configuration.
a. CB
b. CC
c. CE
Ans: a
89. In CB configuration input resistance is __
a. change in VEB/change in IE
b. change in VCB/change in IE
c. change in VCB/change in IC
d. none of the above
93. In CB configuration dynamic output
resistance is ______.
a. low
b. medium
c. high
d. none of the above
Ans: c
94. alpha ac is the slope of ______
characteristic of transistor in CB configuration.
a. input
b. output
c. transfer
d. none of the above
Ans: a
Ans: c
90. The input resistance of CB configuration is
measured at constant ______.
a. IB
b. IC
c. VCB
d. VCE
95. The transfer characteristics of CB show the
relation between _________.
a. IC and IE
b. IC and IB
c. IB and IE
d. all of the above
Ans: c
Ans: a
91. The dynamic output resistance of transistor
in CB configuration is ______ at constant IE.
a. change in VEB/change in IE
b. change in VEB/change in Ic
c. change in VcB/change in Ic
d. none of the above
96. Which terminal represents the control input
of a bipolar transistor?
a. emitter
b. collector
c. gate
d. base
Ans: c
Ans: d
92. The dynamic output resistance of CB
configuration is measured at constant _____
a. IB
b. IC
c. IE
Ans: c
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97. Which of the following expressions
represents the DC current gain of a bipolar
transistor?
a. IC/IB
b. dIC/dIB
c. IC/VBE
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Basic Electronics Engineering
d. dIC/dVBE
Ans: a
98. Output characteristics of common base
configuration gives
a. skin effect
b. early effect
c. reach through effect
d. hall effect
Ans: b
99. Early effect and base width modulation
effect is ______.
a. same
b. different
c. not related to each other
d. both damages the transistor
Ans: a
100. Input resistance for common base
configuration is _______.
a. 20 ohm
b. 200 ohm
c. 2 Kohm
d. 2 Mohm
Ans: a
101. Input resistance for common collector
configuration is _______.
a. 5 Kohm
b. 50 Kohm
c. 500 Kohm
d. 5 Mohm
Multiple Choice Questions
a.
b.
c.
d.
40 Kohm
400 Kohm
4 Mohm
40 Mohm
Ans: a
103. Output resistance for common collector
configuration is _______.
a. 5 ohm
b. 50 ohm
c. 5 Kohm
d. 500 Kohm
Ans: b
104. Voltage gain in
configuration is _________.
a. always above unity
b. unity
c. less than unity
d. not any above
common
base
Ans: a
105. Voltage gain in CE configuration is ______
a. less than unity
b. unity
c. always above unity
d. not any above
Ans: c
106. Voltage gain in CC configuration is ____
a. less than unity
b. unity
c. always above unity
d. not any above
Ans: c
Ans: a
102. Input resistance for common emitter
configuration is _______.
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Basic Electronics Engineering
107. Current amplification factor alpha dc is
given by _____.
a. IC/IE
b. IE/IC
c. IC/IB
d. IE/IB
Ans: a
108. Current amplification factor ßdc is given by
_____.
a. IC/IE
b. IE/IC
c. IC/IB
d. IE/IB
Ans: c
109. Current amplification factor gamm dc is
given by _____.
a. IC/IE
b. IC/IB
c. IE/IC
d. none of the above
Multiple Choice Questions
Ans: b
112. Current gain in CB configuration is
_______.
a. unity
b. less than unity
c. greater than unity
d. not any above
Ans: b
113. Current gain in CE configuration is ______
a. 25 to few hundreds
b. less than 10
c. 10 to 15
d. unity
Ans: a
114. Current gain in CC configuration is _____
a. less than unity
b. unity
c. 25 to few hundreds
d. less than 10
Ans: d
Ans: c
110. For voltage amplifier function, suitable
configuration is _______.
a. CE configuration
b. CC configuration
c. CB configuration
d. none of the above
115. Input resistance for Common Emitter
Configuration is _______.
a. 100 ohm
b. 1Kohm
c. 1 Mohm
d. 100Kohm
Ans: c
111. Output resistance for Common Base
Configuration is _______.
a. 1 Kohm
b. 1 Mohm
c. 10 Kohm
d. 100 Mohm
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Ans: b
116. In bipolar transistor, the current flows due
to _____.
a. minority carriers
b. majority carriers
c. both, majority and minority carriers
d. none of the above
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Basic Electronics Engineering
Ans: c
Multiple Choice Questions
117. Transistor device is used in the application
such as ________.
a. switch
b. amplifier
c. oscillator
d. above all
121. In a transistor as an amplifier, the reverse
saturation current:
a.
Doubles for every degree C rise in
temperature
b. Doubles for every 10 degree C rise in
temperature
c. Decreases linearly with temperature
d. Increase linearly with temperature
Ans: d
Ans: b
118. When transistor is unbiased then due to
following, two diffrent depletion regions form in
the transistor at two respective junction ______
a. only drift process
b. drift and diffusion process
c. only diffusion process
d. diffusion and then drift process
122. The transfer characteristics of a CB
configuration is a graph of _____.
a. VCB, IC
b. IE, IC
c. VEB, IE
d. none of the above
Ans: b
Ans: c
119. In common base configuration, the width
of depletion region also increases, which
reduces the electrical base width, this effect is
known as ____.
a. hall effect
b. skin effect
c. early effect
d. piezo-electric effect
Ans: c
120. Which of the following expressions
represents the transconductance of a bipolar
transistor?
a. dIC/dIB
b. IC/IB
c. dIC/dVBE
d. IC/VBE
Ans: c
Sinhgad College of Engineering
123. In saturation region the collector current
_____.
a. is independent of IB
b. is proportional to IB
c. is equal to IB
d. none of the above
Ans: a
124. Shape of the transfer characteristics of CB
configuration is ____.
a. non-linear
b. linear
c. parabolic
d. none of the above
Ans: b
125. The reverse saturation current of CE
configuration with base open is _______.
a. ICEO
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Basic Electronics Engineering
b. ICBO
c. ICO
d. none of the above
Ans: a
126. The voltage gain of an emitter follower is
______.
a. 1
b. less than 1
c. greater than 1
d. none of the above
Ans: b
127. In ________ configuration/s there is phase
shift of 0 degree between input and output.
a. CB
b. CE
c. CC
d. CB and CC
Multiple Choice Questions
130. For CE amplifier, ac input is applied to ___
a. emitter
b. base
c. collector
d. none of the above
Ans: b
131. For CE configuration, in the cut-off region,
IC=______.
a. ICBO
b. ICEO
c. 0
d. none of the above
Ans: b
132. The ICEO in terms of ICBO is given by __
a. ICEO=(1+ß. ICBO
b. ICEO=ß*ICBO+1
c. ICEO=ICBO/(1+ß.
d. none of the above
Ans: d
128. The output of ______ amplifier follows the
input. Hence it is also called emitter follower.
a. CB
b. CE
c. CC
d. none of the above
Ans: a
133. If R1 is the input resistance and R2 is the
output resistance of the voltage gain A in the
common emitter configuration is ________.
a. alpha(R2/R1.
b. ß(R2/R1.
c. alpha
d. ß
Ans: c
Ans: b
129. For an CC amplifier, the input is applied to
_____ and the output is obtained at _______.
a. emitter, base
b. collector, base
c. base, emitter
d. none of the above
134. The current gain of CE configuration is ___
a. ßdc
b. alpha dc
c. gamma dc
d. none of the above
Ans: c
Ans: a
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Basic Electronics Engineering
135. ßdc=____.
a. IB/IE
b. IC/IE
c. IC/IB
d. none of the above
Multiple Choice Questions
140. The input resistance of CE configuration is
change in VBE/change in IB at constant _______
a. VCE
b. VCB
c. IC
d. none of the above
Ans: c
Ans: a
136. The ratio of which two currents is
represented by ß?
a. IC and IE
b. IC and IB
c. IE and IB
d. none of the above
141. The input resistance in CE configuration is
______ at constant VCE.
a. change in VBE/change in IC
b. change in VBE/change in IB
c. change in VBE/change in IE
d. None of the above
Ans: b
Ans: b
137. ß in terms of alpha is given by ______.
a. ß=alpha/(1+alpha.
b. ß=alpha/(1-alpha.
c. ß=(1+alpha. /alpha
d. none of the above
Ans: b
138. ß in a transistor when IB=105µA,
IC=2.05mA is ______.
a. 11.5
b. 17.5
c. 13.5
d. 19.5
Ans: d
139. Determine the value of a when ß=100.
a. 1.01
b. 101
c. 0.99
d. cannot be solved with the information
provided
Ans: c
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142. The value of Ri in CE configuration is _____
that in CB configuration.
a. lower than
b. higher than
c. same as
d. none of the above
Ans: b
143. The typical value of VBE(sat. in CE
configuration for a Si transistor is _____.
a. 0.7V
b. 0.2V
c. 0.9V
d. none of the above
Ans: a
144. Value of VBE(active) for a Ge transistor is _
a. 0.2
b. 0.6
c. 0.7
d. none of the above
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Basic Electronics Engineering
Multiple Choice Questions
Ans: a
d. greater than or equal to
145. The value of VBE(cut-off. for Si transistor is
a. 0.7V
b. 0V
c. 0.3V
d. none of the above
Ans: c
Ans: b
146. The output characteristics of a CE
configuration is the graph of ________.
a. VCE, VEC
b. IC, VEC
c. VCE, IC
d. none of the above
Ans: c
147. The value of dynamic output resistance in
the CE configuration is ______ than in CB
configuration.
a. lower
b. higher
c. moderate
d. none of the above
Ans: a
148. Which of the following region is (are. part
of the output characteristics of a transistor?
a. Active
b. cut-off
c. saturation
d. all of the above
Ans: d
149. The saturation region is defined by VCE
_____VCE(sat. .
a. >
b. <
c. less than or equal to
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150. In _______ region the collector current is
proportional to the base current.
a. saturation
b. cut-off
c. active
d. none of the above
Ans: c
151. The cut-off region is defined by IB _____
0A.
a. >
b. <
c. less than or equal to
d. greater than or equal to
Ans: c
152. When a transistor is operated with emitter
diode forward biased and collector diode
reverse biased, the collector current will be __
a. almost zero
b. almost equal to the emitter current
c. infinitely high
d. many times more than the emitter current
Ans: b
153. For a BJT, under the saturation condition _
a. IC=ß*IB
b. IC > ßIB
c. IC is independent of all other parameters
d. IC < ßIB
Ans: d
154. Which of the statement for the BaseEmitter and the collector-base junctions is/are
true?
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Basic Electronics Engineering
a. IC is independent of VCE in the Active region.
IC=0 and VCE=VCC in the cut-off region.
IC=IC(sat) and VCE=0 in the saturation region.
b. the B-E should be forward biased and the
C-B should be reverse biased in the active
region
c. the base current IB controls the collector
current IC in the active, cut-off and saturation
regions
d. all of the above
Multiple Choice Questions
Ans: b
159. The transfer characteristic
configuration is _____.
a. linear
b. nonlinear
c. parabolic
d. none of the above
in
CE
Ans: a
Ans: b
155. A transistor is in saturation if
a. IB>IC/ß
b. IC/ß>/IB
c. IC=ßIB
d. none of the above
160. gamma=_____.
a. IC/IB
b. IE/IC
c. IE/IB
d. none of the above
Ans: a
Ans: c
156. A transistor is in active region if
a. VCE > VCE(sat.
b. VCE = VCE(sat.
c. VCE < VCE(sat.
d. none of the above
161. gamma =______.
a. 1/(1+alpha)
b. 1/(1-alpha)
c. 1/(1+ß)
d. none of the above
Ans: a
Ans: b
157. Typical value of VCE(sat. is _____.
a. 0.7V
b. 0.2V
c. 0.6V
d. none of the above
162. The ____ configuration is the most widely
used.
a. CB
b. CE
c. CC
d. none of the above
Ans: b
Ans: b
158. The slope of the transfer characteristics in
CE configuration is indicated by ______.
a. ßdc
b. ßac
c. alphadc
d. alphaac
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163. The ____ configuration is used as an input
stage.
a. CB
b. CE
c. CC
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Basic Electronics Engineering
Multiple Choice Questions
d. none of the above
Ans: a
164. The input resistance of CC configuration is
____.
a. low
b. high
c. 0
d. none of the above
Ans: b
165. The value of input resistance in the CE
configuration is _______ that in CB
configuration.
a. lower than
b. higher than
c. same as
d. none of the above
Ans: b
166. The current gain of common base npn
transistor is 0.96. What is the current gain if it is
used as common emitter amplifier?
a. 16
b. 24
c. 20
d. 32
168. Iceo indicates
a. collector Current
b. emitter Current
c. base current
d. collector to Emitter current when base is
open.
Ans: d
169. In NPN transistor, the collector current is
24mA. If 80% of the electrons reach collector,
the base current in mA is
a. 36
b. 26
c. 16
d. 6
Ans: d
170. In a transistor circuit base current is
increased by 50µA, the collector current
increases by 1mA. The current gain of the
transistor is
a. 20
b. 40
c. 60
d. 80
Ans: a
Ans: b
167. In a common emitter circuit, the collector
current is 0.9 mA, base current is 100µA. The
value of current gain and emitter current is
______.
a. 49 and 2mA
b. 9 and 1mA
c. 0.9 and 0.1 mA
d. none of these
171. A common emitter transistor amplifier has
a current gain of 50. If the load resistance is
4Kohm and input resistance is 500 ohm, the
voltage gain in amplifier is _____.
a. 160
b. 200
c. 300
d. 400
Ans: d
Ans: b
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Basic Electronics Engineering
172. A common emitter amplifier is designed
with npn transistor with alpha=0.99, the input
impedance is 1 Kohm and load is 10Kohm. The
voltage gain will be _______.
a. 9.9
b. 99
c. 990
d. 9900
Ans: c
173. Transistor has lowest output impedance in
________ configuration.
a. CB
b. CE
c. CC
d. none of the above
Ans: c
174. Current gain of transistor is lowest in
____________ Configuration.
a. CB
b. CE
c. CC
d. none of the above
Ans: a
175. The output resistance of CC configuration
is _____________
a. Very Low
b. Low
c. High
d. None of these
Ans: a
176. The ___________ of CC configuration is
less than unity.
a. Input resistance
b. Current gain
c. Voltage Gain
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Multiple Choice Questions
d. None of the above
Ans: c
177. Identify which configuration has following
characteristics. Voltage gain is less than one,
Input impedance high and output impedance
very low.
a. CB
b. CE
c. CC
d. None of these
Ans: c
178. _________ amplifier configuration
provides both high current and voltage gain.
a. CB
b. CE
c. CC
d. None of these
Ans: b
179. The ___________ configuration is used for
impedance matching.
a. CB
b. CE
c. CC
d. None of these
Ans: c
180. As compared to a CB amplifier, a CE
amplifier has __________
a. Lower current amplification
b. Higher current amplification
c. Lower input resistance
d. higher input resistance
Ans: b
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Basic Electronics Engineering
Multiple Choice Questions
181. In ______________ configuration there is
phase shift of 180 degree between input and
output.
a. CB
b. CE
c. CC
d. None of these
Ans: b
182.
________________
transistor
configuration provides the highest input
impedance.
a. CB
b. CE
c. CC
d. None of these
Ans: c
183. The ___________ configuration is used as
an output stage.
a. CB
b. CE
c. CC
d. None of these
Ans: c
184. The Q point
______________.
a. open point
b. operating point
c. DC point
d. Breakdown point
is
also
known
as
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Ans: b
186. The position of Q point on the DC load line
should be ______________.
a. Stable
b. unstable
c. bistable
d. tristable
Ans: a
187. In CE configuration, co-ordinates of Q point
are____________.
a. Vce, Ib
b. Vcb,Ic
c. Vce,Ic
d. Vce,Ie
Ans: c
188.In CE configuration, the upper end of DC
load line is called the ____________points and
the lower end is the ____________ point.
a. Q, base
b. base, Q
c. Saturation, Q
d. cut-off, Q
Ans: c
Ans: b
185. The slope of a Dc
represents_____________.
a. Collector resistance
b. reciprocal of DC load resistance
c. reciprocal of AC load resistance
d. None of the above
load
line
189. _____ has an important effect on shifting
of the operating point.
a. Voltage
b. change in beta
c. Current
d. None of the above
Ans: b
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Basic Electronics Engineering
190. Which of the following factor affects the Q
point stability?
a. Temperature
b. Bypass Capacitor
c. Coupling Capacitor
d. None of the above
Ans: a
191. Three different Q points are shown on a
load line. The upper Q point represents the
____.
a. minimum current gain
b. intermediate current gain
c. maximum current gain
d. cut-off point
Ans: c
192. If a transistor operates at the middle of the
load line, a decrease in the base resistance will
move the Q point ____.
a. down
b. up
c. no where
d. off the load line
Ans: b
193. If the base supply voltage increases, the Q
point moves ________.
a. down
b. up
c. no where
d. off the load line
Ans: b
194. When the Q point moves along the load
line, VCE decreases when the collector current
________.
a. decreases
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Multiple Choice Questions
b. stays the same
c. increases
d. none of the above
Ans: c
195. Suppose the base resistor is open. The Q
point will be ______.
a. in the middle of the load line
b. at the upper end of the load line
c. at the lower end of the load line
d. off the load line
Ans: c
196. If a transistor operates at the middle of the
load line, a decrease in the current gain will
move the Q point ________.
a. down
b. up
c. no where
d. off the load line
Ans: a
197. If the base supply voltage is disconnected,
the collector-emitter voltage will equal
_______.
a. 0V
b. 6V
c. 10.5V
d. collector supply voltage
Ans: d
198. If the base resistor has zero resistance,
than transistor will probably be _______.
a. saturated
b. in cut-off
c. destroyed
d. none of the above
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Basic Electronics Engineering
Ans: c
199. If the collector resistor opens in a basebiased circuit, the load line will become ______.
a. horizontal
b. vertical
c. useless
d. flat
Ans: a
200. If the emitter resistance decreases, the
_____.
a. Q point moves up
b. collector current decreases
c. Q point stays where it is
d. current gain increases
Ans: a
201. If the operating point of an npn transistor
amplifier is selected in saturation region, it is
likely to result in________________.
a. thermal runway of transistor
b. clipping of output in the positive half of the
input signal
c. need for high DC collector supply
d. clipping of output in the negative half of the
input signal
Ans: b
202. The output voltage of an ampifier is 5V
when an input voltage is 50mV. Its voltage gain
is _______.
a. 100
b. 250
c. 1000
d. none of the above
Ans: a
Sinhgad College of Engineering
Multiple Choice Questions
203. The ideal voltage amplifier must have
______ input resistance.
a. low
b. high
c. infinite
d. none of the above
Ans: c
204. The ideal value of Ro is ______.
a. zero
b. infinite
c. very low
d. none of the above
Ans: a
205. Ideally the bandwidth of an amplififer
should be _____.
a. infinite
b. low
c. as high as possible
d. none of the above
Ans: a
206. The frequency of Vo of an amplifier is
_______.
a. less than that of Vin
b. same as that of Vin
c. greater than that of Vin
d. none of the above
Ans: b
207. Ideallly voltage gain of an ampllifier should
be _______.
a. zero
b. high
c. infinite
d. none of the above
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Basic Electronics Engineering
Ans: c
208. In a common emitter amplifier output
resistance is 5000 ohm and input resistance is
2000 ohm. If the peak value of signal voltage is
10mV and B=50, the peak value of voltage
output is _____.
a. 5 X 10^-6 V
b. 2.5 X 10^-4 V
c. 1.25V
d. 125V
Ans: c
209. The current gain of ______ amplifier is
always less than unity.
a. CB
b. CE
c. CC
d. none of the above
Ans: a
210. The voltage gain of _____ amplifier is
always less than unity.
a. CB
b. CE
c. CC
d. none of the above
Ans: c
211. The _______ amplifier can be used as
buffer.
a. CB
b. CE
c. CC
d. none of the above
Ans: c
212. MOSFET is a _____ controlled device.
Sinhgad College of Engineering
Multiple Choice Questions
a.
b.
c.
d.
current
voltage
field
all of the above
Ans: b
213. It is the insulating layer of ______ in the
MOSFET construction that
accounts for the
very desirable high input impedance of the
device.
a. SiO
b. GaAs
c. SiO2
d. HCI
Ans: c
214. Which of the following applies to
MOSFETs?
a. No direct electrical connection between the
gate terminal and the channel
b. Desirable high input impedance
c. Uses metal for the gate, drain and source
connections
d. All of the above
Ans: d
215. How many terminals a MOSFET has?
a. 2
b. 3
c. 4
d. 3 or 4
Ans: b
216. MOSFET is a ______ device.
a. unipolar
b. bipolar
c. multipolar
d. none of the above
Page 47
Basic Electronics Engineering
Multiple Choice Questions
d. none of the above
Ans: a
217. In MOSFET, the current flows due to ____
a. minority carriers
b. majority carriers
c. both, majority and minority carriers
d. none of the above
Ans: b
222. A MOSFET has a high input _____.
a. current
b. resistance
c. inductance
d. none of the above
Ans: b
Ans: b
218. Which of the following transistor(s)
has(have) depletion and enhancement types?
a. BJT
b. JFET
c. MOSFET
d. none of the above
223. The packaging density of MOSFETs is
______ as compared to BJT.
a. less
b. high
c. same
d. none of the above
Ans: d
Ans: b
219. VLSI technology relies on _______.
a. MOSFET
b. BJT
c. diode
d. none
224. Because of insulated gate, MOSFET is also
called _______.
a. INFET
b. IGFET
c. IMOSFET
d. IGMOSFET
Ans: c
Ans: b
220. For making n-channel enhancement
MOSFET the substrate taken will be of type
a. p
b. n
c. either p or n
d. none of these
225. In a enhancement mode MOSFET, the
channel is ______.
a. always present
b. always absent
c. initially absent
d. none of the above
Ans: a
Ans: c
221. The input resistance of MOSFET is ____
that of BJT.
a. lower than
b. higher than
c. same as
Sinhgad College of Engineering
226. For an n-channel EMOSFET VT is ____.
a. negative
b. zero
c. positive
Page 48
Basic Electronics Engineering
Multiple Choice Questions
d. none of the above
Ans: b
Ans: c
227. For an EMOSFET ID=0 for ________.
a. VGS > VT
b. VGS < VT
c. VDS < VT
d. none of the above
232. By connecting drain and gate terminals
together EMOSFET can be used as ______.
a. amplifier
b. open switch
c. resistor
d. none of the above
Ans: b
Ans: c
228. In order to operate EMOSFET as an
amplifier we have to operate it in ___ region.
a. ohmic
b. saturation
c. cut-off
d. none of the above
233. In n-channel EMOSFET, the conduction
begins when _____.
a. VGS=VT
b. VDS=VP
c. VDS=VDD
d. none of the above
Ans: b
Ans: a
229. The EMOSFET acts as a ____ for VGS < VT.
a. open switch
b. closed switch
c. resistor
d. none of the above
Ans: a
230. For an n-channel EMOSFET,ID _ for VGS=0.
a. zero
b. IDSS
c. infinite
d. none of the above
Ans: a
231. In n-channel EMOSFET channel is ___
when VGS > VT.
a. disappeared
b. induced
c. none of these
d. all of the above
Sinhgad College of Engineering
234. In enhancement type MOSFET, channel is
present initially.
a. The statement is false since channel is
enhanced by applying gate voltage
b. The statement is true
c. No concept of channel is there
d. All the above are false
Ans: a
235. For an EMOSFET, the relation between ID
and VGS is ______.
a. ID=k(VGS-VT)
b. ID=k2(VGS-VT)
c. ID=k(VGS-VT)2
d. none of the above
Ans: c
236. The drain characteristics of MOSFET is
_______.
Page 49
Basic Electronics Engineering
a.
b.
c.
d.
VDS to ID
VGS to ID
both of the above
none of the above
Multiple Choice Questions
Ans: c
Ans: a
237. The transfer characteristics of MOSFET is
_____.
a. VDS to ID
b. VGS to ID
c. both of the above
d. none of the above
Ans: b
238. MOSFET is ______.
a. multilayer oxide semiconductor field effect
transistor
b. most oxidized semiconductor field effect
transistor
c. metal oxide semiconductor field effect
transistor
d. none of the above
Ans: c
239. MOSFETs are also called _________.
a. IGFETs
b. BJTs
c. UJTs
d. none of the above
Ans: a
240. ______ and _____ are two basic types of
MOSFETs.
a. NPN and PNP
b. IGFET and JFET
c. DMOSFET and EMOSFET
d. none of the above
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