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RG614
50-500MHz
InGap HBT IF Gain Block MMIC Amplifier
Product Description
Features
RG614 is a high performance InGap HBT MMIC IF

High Gain 27.1dB at 70MHz
gain block amplifier utilizing a Darlington pair

P1dB=21dBm at 140MHz
configuration with an active bias circuit and it can

Unconditionally stable
be used as a cascadable 50 ohm IF gain block

Single fixed 5V supply
applications that require high gain and excellent

Industry standard SOT-89 package
stable amplification. It ’ s housed in a lead-free/

Robust ESD, Class 1C
green/RoHS-compliant SOT-89 industry-standard

Lead-free, RoHS compliant, Green
SMT package and internally matched to minimize
number of external bias component
Applications
Component Diagram
RFin
GND
Parameter

LO signal boosting Amplifier

Receive IF Amplifier

Cellular, PCS, GSM, WCDMA, LTE

CATV, Cable Modem & DBS
RFout
Specification
Condition
Units
27.1
70MHz
dB
25.2
26.7
140MHz
dB
25.1
26.6
240MHz
dB
19.5
21.0
70MHz
dBm
19.5
21.0
140MHz
dBm
36.2
38.2
70MHz
dBm
35.9
37.9
140MHz
dBm
Input Return Loss
-36.9
70MHz
dB
Output Return Loss
-11.9
70MHz
dB
Reverse Isolation
-32.8
70MHz
dB
3.2
70MHz
dB
Small Signal Gain
Output power at 1-dB
Compression
Third Order Intercept Point
Min.
Typ.
25.6
Noise Figure
Device Voltage
Device current (Icq)
Thermal Resistance
Max.
5
82
90
34
V
mA
100
Junction
to lead
°C/W
Test condition: Vcc=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, Pout per tone=10dBm TL=25°C, ZS=ZL=50
April-15 Ver11
Phone: 82-31-603-8118 Fax: 82-31-624-5444 Order on-line at www.ardtech.co.kr
Application support: [email protected]
1
RG614
50-500MHz
InGap HBT IF Gain Block MMIC Amplifier
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Voltage(VD)
5.5
V
Max Device Current(ID)
136
mA
Max RF Input Power
18
dBm
Max Operating Dissipated Power
0.74
W
Junction Temperature(TJ)
+150
°C
Operating Temperature(TL)
-40 to +85
°C
Storage Temperature
-65 to +150
°C
ESD Sensitivity(HBM)
Class 1C
Moisture Sensitivity Level
MSL1
Typical Electrical Specification
Parameter
70MHz
140MHz
240MHz
500MHz
Unit
S21
27.1
26.9
26.6
26.2
dB
OIP3
38.2
37.9
37.7
37.3
dBm
P1dB
21.0
21.0
21.0
21.0
dBm
S11
-36.9
-24.5
-20.3
-13.9
dB
S22
-11.9
-12.0
-12.0
-11.5
dB
S12
-32.8
-32.8
-33.0
-33.3
dB
NF
3.2
3.2
3.5
3.5
dB
Test condition: Vcc=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, Pout per tone=10dBm TL=25°C, ZS=ZL=50
April-15 Ver11
Phone: 82-31-603-8118 Fax: 82-31-624-5444 Order on-line at www.ardtech.co.kr
Application support: [email protected]
2
RG614
50-500MHz
InGap HBT IF Gain Block MMIC Amplifier
S-Parameter Over Temperature
P1dB and OIP3 vs. Frequency
April-15 Ver11
Phone: 82-31-603-8118 Fax: 82-31-624-5444 Order on-line at www.ardtech.co.kr
Application support: [email protected]
3
RG614
50-500MHz
InGap HBT IF Gain Block MMIC Amplifier
Icc vs. Vcc Over Temperature and Noise Figure
April-15 Ver11
Phone: 82-31-603-8118 Fax: 82-31-624-5444 Order on-line at www.ardtech.co.kr
Application support: [email protected]
4
RG614
50-500MHz
InGap HBT IF Gain Block MMIC Amplifier
Package Mark and Dimensions
Dimension in inches[Millimeters]
Recommended PCB Pad Pattern
Dimension in inches[Millimeters]
0.047[1.2]
0.019[0.5]
0.047[1.2]
0.033[0.84]
0.024[0.63]
0.065[1.67]
0.11[2.8]
0.036[0.93]
0.026[0.68]
0.078[2.0]
0.039[1.0]
April-15 Ver11
Phone: 82-31-603-8118 Fax: 82-31-624-5444 Order on-line at www.ardtech.co.kr
Application support: [email protected]
5
RG614
50-500MHz
InGap HBT IF Gain Block MMIC Amplifier
Application Schematic & BOM
Reference BOM
Vcc
C5
C4
C1
8200pF Capacitor, 0603 type
C2
8200pF Capacitor, 0603 type
C3
100pF Capacitor, 0603 type
C4
1000pF Capacitor, 0603 type
C5
10uF Capacitor, Tantalum
L1
1uH Chip inductor, 0805 type
C3
L1
RG614
C1
C2
Evaluation PCB Layout
C5
ARDTECH
SOT89 -Ver 2.0
FR-4, H=0.93mm
C4
C1
RF IN
L1
C3
C2
RF OUT
PCB Substrate Information[mm]
April-15 Ver11
Dielectric Constant
FR-4/4.6
Dielectric Height
0.036[0.93]
Copper Thickness
1 oz.
Phone: 82-31-603-8118 Fax: 82-31-624-5444 Order on-line at www.ardtech.co.kr
Application support: [email protected]
6