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Optical control of an individual spin L.Besombes Y.Leger H. Boukari D.Ferrand H.Mariette J. FernandezRossier CEA-CNRS team « Nanophysique et Semi-conducteurs » Institut Néel, CNRS Grenoble, FRANCE Department of applied physics, University of Alicante, SPAIN Introduction Ultimate semiconductor spintronic device: Single magnetic ion / individual carriers -Control of the interaction between a single magnetic atom and an individual carrier. (spin injection, spin transfer) -Manipulation of an individual spin (memory, quantum computing) II-VI Semi-Magnetic semiconductor QDs Magnetic doping (Mn: S=5/2) Localized carriers …Towards a single spin memory. Theoretical proposals Transport: A single QD containing a Mn atom could be use as a spin filter Qu et al. Phys. Rev. B74, 25308 (2006) Nano-magnetism : electrical control of the magnetism. Hawrylak et al. Phys. Rev. Lett. 95, 217206 (2005) Memories : writing and reading of the spin state of a single Mn atom. A.O. Govorov et al., Phys. Rev. B 71, 035338 (2005) Outline 1. Probing the spin state of a single Magnetic atom - II-VI magnetic self assembled QDs - Carriers-Mn exchange interaction - Importance of QD structural parameters on the spin detection (Shape anisotropy, valence band mixing) 2. Carrier controlled Mn spin splitting - Anisotropy of the hole-Mn interaction - Charge tunable Mn-doped QDs 3. Carriers and Mn spin dynamics Individual CdTe/ZnTe QDs UHV-AFM image of CdTe QDs on ZnTe. Micro-spectroscopy. 6,5 MLs QDs density: 5.109 cm-2 TEM image of CdTe QDs on ZnTe. PL Intensity (arb. units) d 20 m 50meV 100 m d 0,5 m 50eV d 0,25 m Size: d=15nm, h=3nm (Lz<<Lx,Ly) 1950 2000 Energy (meV) 2050 2100 Optical transitions in an individual QD B=0 B=0 Jz=+1 e: spin 1/2 h: anisotropic (Jz=3/2) e h Jz= -1 0 1meV Jz= - 2 e h Jz= +2 G.S. s- s+ Optical selection rules: Sz= -1/2 s+ Sz= +1/2 e s- z Jz= +3/2 Jz= -3/2 Jz= +1/2 Jz= -1/2 hh lh Gated charged quantum dots Transfer of holes from the surface states: p type doping of the QDs. V p-ZnTe CdTe Electrical control of the charge. Mn doped II-VI QDs Cd: 3d10 4s2 Mn: 3d5 4s2 hn Cd Te 2-3 nm Mn •Mn remplace Cd: Mn2+ •Mn2+ S=5/2, 2S+1=6 Electron: σ = 1/2 Exchange interaction: •Mn - electron J e I •Mn - hole Jh I 10-15 nm M I Se ( x I ) M I Sh ( x I ) Hole: jZ = ±3/2 Mn atom: S = 5/2 Emission of Mn-doped individual QDs The presence of a single magnetic atom completely control the emission structure. Measurement of the exchange interaction energy of the electron, hole, Mn Phys Rev Lett. 93, 207403 (2004) Heavy-hole exciton / Mn exchange coupling Ie- Mn (s z .Sz 1 / 2(s .S- s - .S )) Exchange constant: s-d, a>0 p-d, b<0 Ih - Mn ( jz .Sz 1 / 2( j .S- j- .S )) Mn2+ X X+Mn2+ e Jz = -1 h Jz 1 Heavy hole exciton e Jz = +1 h -5/2 +5/2 -3/2 +3/2 -1/2 +1/2 +1/2 -1/2 -3/2 +3/2 e Jz = -1 h Jz 2 Mn2+ +5/2 Jz = +1 e h -5/2 Sz = ±5/2, ±3/2, ±1/2 Heavy-hole exciton / Mn exchange coupling Ie- Mn (s z .Sz 1 / 2(s .S- s - .S )) 1 photon (energy, polar) = 1 Mn spin projection Ih - Mn ( jz .Sz 1 / 2( j .S- j- .S )) X X+Mn2+ -5/2 +5/2 … Jz 1 … +5/2 -5/2 Heavy hole exciton Jz 2 s- Mn2+ s+ Overall splitting controlled by Ie-Mn and Ih-Mn . Mn-doped individual QDs under magnetic field Magnetic field dependent PL intensity distribution. NMn=0 NMn=1 Polarization of the Mn spin distribution e h e h Mn2+ Mn spin polarization Jz = +1 Jz = -1 e h Mn2+ e h Mn2+ s- Mn2+ TLatt 5K Teff=12K s+ Mn spin conservation Boltzmann distribution of the Mn-Exciton system: gMn=2 B Mn2+ B Teff Tlattice Statistic Mn spin distribution Resonant excitation B=0T Complex excited states fine structure Selection of Mn spin distribution and spin conservation during the lifetime of the exciton. Carriers-Mn exchange coupling Exp. Th. Effective spin Hamiltonian: Ih - Mn jz .Sz I e- Mn s .S Ie- hs. j geμBσ z Bz ghμB jz Bz g Mn μBS z B z B 2 - X-Mn Overlap - QD shape - Strain distribution -1 0 1 Energy (meV) 2 Detection condition: Exciton-Mn overlap 1.3 meV Ie-Mn in a flat parabolic potential: Decrease of X-Mn overlap L z 3nm d 26nm Exchange integrals controlled by the overlap with the Mn atom. Detection condition: Structural parameters QD1 Heavy-hole + Mn QD2 Influence of the QD shape QD3 Influence of the valence band mixing Sz= +- 1/2 Jz=+ - 3/2 Jz=+ - 1/2 Phys Rev Lett. 95, 047403 (2005) e hh lh Phys Rev B. 72, 241309(R) (2005) Valence band mixing in strained induced QDs Inhomogeneous relaxation of strain in a strained induced QD (Bir & Pikus Hamiltonian): |3/2> |1/2> |-1/2> |-3/2> E 1/2 -1/2 -3/2 3/2 1/2 -1/2 k ~ ~ <3/2| j - |-3/2> = 0 via cross components because I h-Mn j .S - j- .S 0 ~ |3/2> = c1 |3/2>+ c2 |-1/2> c1>>c2 ~ |-3/2> = c3 |-3/2>+ c4 |1/2> c3>>c4 3 1 2 1 ,- 0 -1 2 2 3 3 3 3 ,- - 1 2 2 Influence of valence band mixing I h-Mn ( jz .S z e lh ( j .S - j- .S )) elh : Heavy-light hole mixing efficiency X Possibility to flip ~ from jz= +3/2 ~ to -/3/2 via light holes Effective h-Mn interaction term in the Heavy hole Subspace e h e h Allows simultaneous hole-Mn spin flip Jz 1 Jz 2 X+Mn2+ Influence of valence band mixing I h-Mn ( jz .S z e lh ( j .S - j- .S )) Exp. elh : Heavy-light hole mixing efficiency Possibility to flip ~ from jz= +3/2 ~ to -/3/2 via light holes Effective h-Mn interaction term in the Heavy hole Subspace e h Th. e h Allows simultaneous hole-Mn spin flip Emission of “non-radiative” exciton states Phys Rev B. 72, 241309(R) (2005) X-Mn in transverse B field «0» 001 B┴ «-1 » «+1 » Voigt 001 B// Voigt: Complex fine structure… Suppression of the hole Mn exchange interaction Faraday Faraday: Zero field structure is conserved Phys Rev B. 72, 241309(R) (2005) 1. Probing the spin state of a single Magnetic atom - II-VI magnetic self assembled QDs - Carriers-Mn exchange interaction - Importance of QD structural parameters on the spin detection (Shape anisotropy, valence band mixing) 2. Carrier controlled Mn spin splitting - Anisotropy of the hole-Mn interaction - Charge tunable Mn-doped QDs 3. Carriers and Mn spin dynamics Biexciton in a Mn-doped QD X X2 e h e h Increase of the excitation density Increase of the number of carriers in the QD. Formation of the biexciton (binding energy 11meV) Similar fine structure for the exciton and the biexciton . . . Carrier controlled Mn spin splitting X2 (J=0) σ+ X, J=±1 σG.S. Optical control of the magnetization: - One exciton splits the Mn spin levels - With two excitons, the exchange interaction vanishes… Phys Rev B. 71, 161307(R) (2005) Gated charged Mn-doped quantum dots e h e h Charge tunable sungle Mn-doped QDs allow us to probe independantly the interactions between electron and Mn or hole and Mn Phys Rev Lett. 97, 107401 (2006) Variation of hole-Mn exchange interaction e h e h Ie-Mn = 40 μeV Ih-Mn(X+) = 95 μeV Ih-Mn(X) = 150 μeV Ih-Mn(X-) = 170 μeV ♦ The hole confinement is influenced by the Coulomb attraction X+, Mn X, Mn e Mn h X-, Mn Increasing the hole-Mn overlap by injecting electrons in the QD X+, Mn hardly resolved Negatively charged exciton in a Mn doped QD •Isotropic e-Mn interaction •Anisotropic h-Mn interaction e h - 5 2 5 2 Ih- Mn ( jz .S z ) Initial state: 1 h + 1 Mn e h 5 2 - 5 2 J=2 Final state: 1 e + 1 Mn J=3 Optical recombination of the charged exciton - ♦ Optical transitions between: i Sz Mn f Sz Mn e Jz=-1 j e z h e Proportional to the overlap: J, J z S z , Eigenstates of He-Mn 5 2 s- J=2 J=3 Optical recombination of the charged exciton 1 5 6 2 6 3,2 1 3 5 1 5 2 2 6 3,1 1 1 3 2 4 2 2 6 3,0 1 3 1 2 4 2 2 6 3,-2 1 5 3 5 12 2 6 3,-3 5 2 1 1 1 1 3 32 2 6 3,-1 5 2 Probability 3,3 - s 1 5 62 6 J=2 J=3 s- Energy Optical recombination of the charged exciton 1 3 5 - 5 1 2 2 6 2, 1 1 1 3 2 4 2 2 6 2,0 1 1 1 3 3 2 2 6 2,-1 1 3 1 4 2 2 2 6 1 5 3 2,-2 5 1 2 2 6 5 2 5 2 1 s s- J=2 J=3 5 2 - 5 2 Probability 2,2 - Energy Optical recombination of the charged exciton - 5 2 5 2 s s- e-Mn: isotropic h-Mn: anisotropic J=2 J=3 5 2 - 5 2 Probability 1 Energy Charged exciton in a single QD: Influence of VBM I h-Mn ( jz .S z e lh ( j .S - j- .S )) e h Initial state: 1 h + 1 Mn (+3/2,-1/2) (-3/2,+1/2) J=2 Final state: 1 e + 1 Mn J=3 Phys Rev Lett. 97, 107401 (2006) Charged exciton in a single QD: Influence of VBM I h-Mn ( jz .S z e lh ( j .S - j- .S )) e h Initial state: 1 h + 1 Mn (+3/2,-1/2) (-3/2,+1/2) J=2 Final state: 1 e + 1 Mn J=3 Negatively / Positively charged Mn-doped QDs ♦ X-, Mn ♦ X+, Mn ♦ Reversed initial and final states e, Mn h, Mn e, Mn J=2 J=3 h, Mn Energy Gated controlled magnetic anisotropy ST Heisenberg Mz Free Ising hh Q=-1 Q=0 Q=+1 Mn+1h= Nano-Magnet 1. Probing the spin state of a single Magnetic atom - II-VI magnetic self assembled QDs - Carriers-Mn exchange interaction - Importance of QD structural parameters on the spin detection (Shape anisotropy, valence band mixing) 2. Carrier controlled Mn spin splitting - Anisotropy of the hole-Mn interaction - Charge tunable Mn-doped QDs 3. Carriers and Mn spin dynamics Spin dynamics vs photon statistics 1 Mn atom Sz If Sz(t=0) = -5/2 P (Sz = -5/2) 1 -5/2 -5/2 +5/2 … … +5/2 -5/2 s- s+ ? ~1/6 0 t Photon statistics ? 1 photon (σ, E) 1 Mn spin state Correlation measurement on single QDs Whole PL autocorrelation PL int (arb. units) Single emitter statistics : Select a QD with a large splitting to spectrally isolate a Mn spin state 2036 2037 2038 2039 Energy (meV) 2040 Use of a SIL to increase the signal Antibunching: The QDs cannot emit two photons with a given energy at the same time Single Mn spin dynamics Auto Correlation on one line in one polarization s+, -5/2) E X X+Mn2+ 8 ns PL int (arb. units) Jz 1 τX-Mn Jz 2 2036 2037 2038 2039 Energy (meV) 2040 One Mn spin projection t Photon bunching at short delay Single Mn spin dynamics Power dependence Auto Correlation on one line in one polarization σ+ P0 E X X+Mn2+ 2 x P0 PL int (arb. units) Jz 1 τX-Mn Jz 2 3 x P0 2036 2037 2038 2039 Energy (meV) 2040 One Mn spin projection Mixing between Mn spin relaxation time and X-Mn spin relaxation time Single Mn spin dynamics Polarization Cross-Correlation σ+ σ- PL int (arb. units) Direct evidence of the spin transfer -5/2 +5/2 … … +5/2 -5/2 s- 2036 2037 2038 2039 Energy (meV) s+ 2040 One Mn spin projection Influence of magnetic field?...To be continued… Summary Optical probing of a single carrier/single magnetic atom interaction. - The exchange coupling is controlled by the carrier / Mn overlap. - BUT, real self assembled QDs: - Shape anisotropy - Valence band mixing Hole-Mn complex is highly anisotropic but non-negligeable effects of heavy-light hole mixing Charged single Mn-doped QDs: Change the magnetic properties of the Mn with a single carrier. Photon statistics reveals a complex spin dynamics. …. Store information on a single spin?