Download FDA79N15 150V N-Channel MOSFET

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FDA79N15
150V N-Channel MOSFET
Features
Description
• 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 56 nC)
• Low Crss ( typical 96 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
z
G{
z
z
{
TO-3PN
G DS
S
FDA Series
Absolute Maximum Ratings
Symbol
Parameter
FDA79N15
Unit
150
V
79
50
A
A
316
A
±30
V
Single Pulsed Avalanche Energy
(Note 2)
1669
mJ
Avalanche Current
(Note 1)
79
A
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
417
3.3
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FDA79N15 Rev. A
1
Min.
Max.
Unit
--
0.3
°C/W
0.24
--
°C/W
--
40
°C/W
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FDA79N15 150V N-Channel MOSFET
UniFET
Device Marking
Device
FDA79N15
FDA79N15
Electrical Characteristics
Symbol
Package
Reel Size
Tape Width
Quantity
-
-
30
TO-3PN
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
150
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.15
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
VDS = 120V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 39.5A
--
0.025
0.03
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 39.5A
--
46
--
S
--
2620
3410
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
730
950
pF
--
96
140
pF
--
50
112
ns
--
200
410
ns
--
55
120
ns
--
38
85
ns
--
56
73
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 75V, ID = 79A
RG = 25Ω
(Note 4, 5)
VDS = 120V, ID = 79A
VGS = 10V
(Note 4, 5)
--
18
--
nC
--
21
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
79
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
316
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 79A
--
--
1.4
V
trr
Reverse Recovery Time
--
136
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 79A
dIF/dt =100A/µs
--
2.1
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 79A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA79N15 Rev. A
2
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FDA79N15 150V N-Channel MOSFET
Package Marking and Ordering Information
FDA79N15 150V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
2
10
ID, Drain Current [A]
2
10
1
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
25 C
1
10
o
-55 C
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
0
10
-1
10
o
150 C
o
0
0
10
1
10
10
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.06
0.05
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],Drain-Source On-Resistance
0.07
VGS = 10V
0.04
VGS = 20V
0.03
※ Note : TJ = 25℃
0.02
2
10
150℃
1
10
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0
0
25
50
75
100
125
150
175
10
200
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
5000
Coss
4000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Capacitances [pF]
25℃
3000
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
2000
Crss
1000
VDS = 30V
10
VDS = 75V
VDS = 120V
8
6
4
2
※ Note : ID = 79A
0
-1
10
0
0
10
1
10
FDA79N15 Rev. A
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDA79N15 150V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 34.5 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
150
200
Figure 10. Maximum Drain Current
vs. Case Temperature
3
90
10
10 µs
80
100 µs
2
DC
1
10
70
1 ms
10 ms
100 ms
ID, Drain Current [A]
10
ID, Drain Current [A]
100
o
Figure 9. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
0
10
※ Notes :
o
-1
60
50
40
30
20
1. TC = 25 C
10
o
2. TJ = 150 C
3. Single Pulse
10
0
25
-2
10
50
TJ, Junction Temperature [ C]
0
10
1
2
10
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
0 .2
0 .1
0 .0 5
※ N o te s :
1 . Z θ J C( t) = 0 .3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .0 2
10
-2
10
0 .0 1
-5
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
FDA79N15 Rev. A
4
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FDA79N15 150V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FDA79N15 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
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FDA79N15 150V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FDA79N15 Rev. A
6
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FDA79N15 150V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA79N15 Rev. A
7
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failure to perform when properly used in accordance
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effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18