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Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences Design of monolithic microwave integrated circuits in Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences Gnatyuk Dmitry, PhD, laboratory supervisor Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences Founded in 2002 Laboratory for research and development of design methods of nanoheterostructural ultra high frequency transistors and microwave monolithic circuits and for microwave measurements. 2002 – 3 employees 2013 – 6 employees including 1 student and 1 PhD student CONVENTIONAL DESIGN FLOW FOUNDRY CAD verified models Design Rules - technology - production Design engineer Completed project END PRODUCT Evaluation of standard Microwave Office model Spiral Inductor 0,4 nH blue – measurement purple – standard model green – EM calculation red – EM calculation improved S11 S21 Evaluation of standard Microwave Office model Bended microstrip line blue – measurement purple – standard model green – EM calculation red – EM calculation improved S11 S21 Evaluation of standard Microwave Office model Capacitor 0,2 pF blue – measurement purple – standard model green – EM calculation red – EM calculation improved S11 S21 Development of Transistor models Equivalent circuit based model 100 0 -0.2 -0.4 80 -0.6 Ток стока, мА. mA I drain, -0.8 60 -1 -1.2 40 -1.4 -1.6 20 -1.8 -2 0 0 1 2 3 4 5 Напряжение сток-исток, В. U gate-drain, V Measured IV VAH p2 100 p3 90 p1 p4 80 p5 70 IVC urve() (m A) S c hem atic 1 p1: Vstep = 0 V Measured p2: Vstep = -0.2 V p3: Vstep = -0.4 V Calculated p5: Vstep = -0.8 V 50 p7 40 p6: Vstep = -1 V p7: Vstep = -1.2 V p8 30 p9 20 p 10 10 p 11 p8: Vstep = -1.4 V NF, dB p4: Vstep = -0.6 V p6 60 p9: Vstep = -1.6 V p10: Vstep = -1.8 V p11: Vstep = -2 V 0 0 1 2 3 4 5 V o ltag e (V ) Frequency, GHz Calculated IV Design of Ka-band LNA (version 1) NF, dB VSWR Schematic and layout of GaAs pHEMT Ka-band LNA Frequency, GHz Frequency, GHz Calculated results F = 30 – 37,5 GHz Gain > 18 dB NF < 5 dB VSWR in < 2 VSWR out <2 Stability VSWR out S21, dB VSWR in Measured results of Ka-band LNA (version 1) Corrected layout of Ka-band LNA (version 1) type 1 type 2 type 3 type 4 Measured results of corrected Ka-band LNA (version 1) type 1 type 3 type 2 type 4 Gain, NF, dB Gain, NF, dB Measured Noise figure of corrected Ka-band LNA Frequency, GHz Gain = 18 -22 dB NF = 2,5 - 3,3 dB VSWR in < 2 VSWR out < 2 Ud=2V, Id=60mА Measured Gain and NF of LNA (type 4) NF, dB Measured Gain and NF of LNA (types 1 - 3) Frequency, GHz Frequency, GHz Comparison of NF of different types of LNA Accuracy of calculations Measured Calculated NF, dB Measured Measured VSWR out VSWR in Calculated Measured Calculated Calculated Frequency, GHz Frequency, GHz Frequency, GHz Frequency, GHz a) Measured and calculated data of LNA type 1 Measured Measured Measured NF, dB Calculated VSWR out VSWR in Calculated Measured Calculated Calculated Frequency, GHz Frequency, GHz Frequency, GHz b) Measured and calculated data of LNA type 4 Frequency, GHz Possible reasons of calculation error • Inaccurate values of physical magnitude of characteristics of materials at high frequency (permittivity and loss tangent of dielectric, conductivity of metal etc); • Error due to 2.5-D simulator calculation method; • Design peculiarities that were not taken into account during calculations; • Error due to port calibration procedure used in CAD software; • Combined effect of stated above reasons. Design of Ka-band LNA (version 2) Schematic of perfected LNA Picture of perfected LNA Frequency, GHz Frequency, GHz Frequency, GHz Frequency, GHz Gain = 19-22 dB NF = 3,0 - 3,7 dB VSWR in < 2 VSWR out < 2 Ud=2,2 V Ug=0,4 V Id=46 mА Gain and NF, dB Frequency, GHz Frequency, GHz VSWR out VSWR out Frequency, GHz Stability VSWR in Stability VSWR in Measured results of perfected Ka-band LNA (version 2) Frequency, GHz Gain NF Frequency, GHz Validity of design method 5 Frequency, GHz Calculated Frequency, GHz Measured Коэффициент NF, dB шума, дБ Calculated Stability Measured 4.5 4 3.5 3 2.5 2 Calculated Расчет 1.5 1 Measured Измерение 0.5 0 Calculated VSWR out VSWR in Measured 25 Measured 30 35 Frequency, GHz Частота, ГГц Calculated Frequency, GHz Frequency, GHz Measured and simulated data for Ka-band LNA (version 2) • Suggested design method is proved to be effective for 1st iteration result. 40 Design flow diagram 25 dB(S(2,1)) 20 15 10 5 0 15 20 25 30 35 freq, GHz 40 45 50 Comparison of designed LNA with world’s analogues Band, GHz Gain, dB NF, dB S11, dB S22, dB Power supply Chip size, mm2 IUHFSE RAS (Version 1) 37 - 44 18-20 2,5 - 3,3 -10 – -23 -10 – -24 2V, 60mА 1,25 х 1,1 IUHFSE RAS (Version 1) 31 - 44 14-20 2,5 - 5 -5 – -23 -5 – -24 2V, 60mА 1,25 х 1,1 IUHFSE RAS (Version 2) 28 – 36 18,5 – 22 3,0 – 3,7 -10 – -15 -14 – -22 Ug=0,4V Ud=2V, 60mА 1,15 х 1,0 IUHFSE RAS (Version 2) 25 – 40 17 – 22 2,8 – 4,0 -6 – -14 -5 – -22 Ug=0,4V Ud=2V, 60mА 1,15 х 1,0 Mimix XL1000-BD 20 – 40 17 – 21 2–4 -5 – -20 -5 – -17 3V, 35 mА 2,0х1,0 Avago Technologies AMMC-6241 26 – 43 17 – 22 2,6 – 3,3 -17 – - 25 3V, 60 mА 1,9 х 0,8 Triquint TGA4507-EPU 28 – 36 20 – 25 2,1 – 2,3 -6 – -10 -6 – -23 3V, 60 mА 1,86 х 0,85 Triquint TGA4508-EPU 30 – 42 20 – 21 2,7 – 3,2 -6 – -12 -15 – -27 3V, 40 mА 1,7 х 0,8 Hittite HMC-ALH369 24 – 40 18 – 27 1,4 – 2,2 -10 – -20 -13 – -30 5V, 66 mА 2,1 x 1,37 Hittite HMC-566 29 – 36 19– 23 2,5 – 3 -13 – -24 -8 – -10 3V, 80 mА 2,54 x 0,98 UMS CHA2394 36 – 40 19 – 21 2 – 2,5 -8 – -10 -12 – -25 3,5V, 60 mА 1,72x1,08 Name -10 – -14 Comparison of designed LNA with world’s analogues Gain and NF, dB Gain NF Frequency, GHz IUHFSE RAS (version 2) Mimix XL1000-BD 5 4.5 Коэффициент NF, dB шума, дБ Avago Technologies AMMC-6241 4 3.5 3 2.5 2 Расчет Calculated 1.5 1 Measured Измерение 0.5 0 25 30 35 Frequency, Частота, ГГц GHz 40 Evolution of calculation time Intel Core2Duo, 2 threads, 3.4 GHz, 4 Gb RAM - ~ 20 - 25 minutes AMD Phenom II X6 1090T, 6 threads, 3.2 GHz, 4Gb RAM – 120 sec (ADS 2008) Intel Xeon X5690, 24 threads, 3.47 Ghz, 48 RAM (2 CPU) – 72 sec (ADS 2011) AMD FX9 8150, 8-threads, 3.6 GHz, 12 Gb RAM – 57 sec AMD Phenom II X6 110T, 6-threads, 3.3 Ghz, 8 Gb RAM – 53 sec Intel Xeon E5-2687W, 32-threads, 3.1GHz, 32 Gb RAM (2 CPU) – 33 sec Intel Core i7-3770K, 8-threads, 3.5 GHz, 8 Gb RAM – 25 sec Conclusion 1. Custom Design flow based on EM calculations of entire layout is developed. 2. Custom model builder tool is created. 3. Effectiveness of developed design approach is proved experimentally. 4. First in Russia LNA MMICs with competitive specifications are successfully designed and manufactured in IUHFSE RAS. Thank you for your attention