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Institute of Ultra High frequency Semiconductor
Electronics of Russian Academy of Sciences
Design of monolithic microwave integrated circuits in Institute of
Ultra High frequency Semiconductor Electronics of Russian
Academy of Sciences
Gnatyuk Dmitry, PhD, laboratory supervisor
Institute of Ultra High frequency Semiconductor Electronics of
Russian Academy of Sciences
Founded in 2002
Laboratory for research and development of design methods of
nanoheterostructural ultra high frequency transistors and
microwave monolithic circuits and for microwave measurements.
2002 – 3 employees
2013 – 6 employees
including 1 student
and 1 PhD student
CONVENTIONAL DESIGN FLOW
FOUNDRY
CAD verified models
Design Rules
- technology
- production
Design engineer
Completed project
END PRODUCT
Evaluation of standard Microwave Office model
Spiral Inductor 0,4 nH
blue – measurement
purple – standard model
green – EM calculation
red – EM calculation improved
S11
S21
Evaluation of standard Microwave Office model
Bended microstrip line
blue – measurement
purple – standard model
green – EM calculation
red – EM calculation improved
S11
S21
Evaluation of standard Microwave Office model
Capacitor 0,2 pF
blue – measurement
purple – standard model
green – EM calculation
red – EM calculation improved
S11
S21
Development of Transistor models
Equivalent circuit based model
100
0
-0.2
-0.4
80
-0.6
Ток стока, мА.
mA
I drain,
-0.8
60
-1
-1.2
40
-1.4
-1.6
20
-1.8
-2
0
0
1
2
3
4
5
Напряжение
сток-исток,
В.
U gate-drain,
V
Measured IV
VAH
p2
100
p3
90
p1
p4
80
p5
70
IVC urve() (m A)
S c hem atic 1
p1: Vstep = 0 V
Measured
p2: Vstep = -0.2 V
p3: Vstep = -0.4 V
Calculated
p5: Vstep = -0.8 V
50
p7
40
p6: Vstep = -1 V
p7: Vstep = -1.2 V
p8
30
p9
20
p 10
10
p 11
p8: Vstep = -1.4 V
NF, dB
p4: Vstep = -0.6 V
p6
60
p9: Vstep = -1.6 V
p10: Vstep = -1.8 V
p11: Vstep = -2 V
0
0
1
2
3
4
5
V o ltag e (V )
Frequency, GHz
Calculated IV
Design of Ka-band LNA (version 1)
NF, dB
VSWR
Schematic and layout of GaAs pHEMT Ka-band LNA
Frequency, GHz
Frequency, GHz
Calculated results
F = 30 – 37,5 GHz
Gain > 18 dB
NF < 5 dB
VSWR in < 2
VSWR out <2
Stability
VSWR out
S21, dB
VSWR in
Measured results of Ka-band LNA (version 1)
Corrected layout of Ka-band LNA (version 1)
type 1
type 2
type 3
type 4
Measured results of corrected Ka-band LNA (version 1)
type 1
type 3
type 2
type 4
Gain, NF, dB
Gain, NF, dB
Measured Noise figure of corrected Ka-band LNA
Frequency, GHz
Gain = 18 -22 dB
NF = 2,5 - 3,3 dB
VSWR in < 2
VSWR out < 2
Ud=2V, Id=60mА
Measured Gain and NF of LNA (type 4)
NF, dB
Measured Gain and NF of LNA (types 1 - 3)
Frequency, GHz
Frequency, GHz
Comparison of NF of different types of LNA
Accuracy of calculations
Measured
Calculated
NF, dB
Measured
Measured
VSWR out
VSWR in
Calculated
Measured
Calculated
Calculated
Frequency, GHz
Frequency, GHz
Frequency, GHz
Frequency, GHz
a) Measured and calculated data of LNA type 1
Measured
Measured
Measured
NF, dB
Calculated
VSWR out
VSWR in
Calculated
Measured
Calculated
Calculated
Frequency, GHz
Frequency, GHz
Frequency, GHz
b) Measured and calculated data of LNA type 4
Frequency, GHz
Possible reasons of calculation error
• Inaccurate values of physical magnitude of characteristics of
materials at high frequency (permittivity and loss tangent of
dielectric, conductivity of metal etc);
• Error due to 2.5-D simulator calculation method;
• Design peculiarities that were not taken into account during
calculations;
• Error due to port calibration procedure used in CAD software;
• Combined effect of stated above reasons.
Design of Ka-band LNA (version 2)
Schematic of perfected LNA
Picture of perfected LNA
Frequency, GHz
Frequency, GHz
Frequency, GHz
Frequency, GHz
Gain = 19-22 dB
NF = 3,0 - 3,7 dB
VSWR in < 2
VSWR out < 2
Ud=2,2 V
Ug=0,4 V
Id=46 mА
Gain and NF, dB
Frequency, GHz
Frequency, GHz
VSWR out
VSWR out
Frequency, GHz
Stability
VSWR in
Stability
VSWR in
Measured results of perfected Ka-band LNA (version 2)
Frequency, GHz
Gain
NF
Frequency, GHz
Validity of design method
5
Frequency, GHz
Calculated
Frequency, GHz
Measured
Коэффициент
NF, dB шума, дБ
Calculated
Stability
Measured
4.5
4
3.5
3
2.5
2
Calculated
Расчет
1.5
1
Measured
Измерение
0.5
0
Calculated
VSWR out
VSWR in
Measured
25
Measured
30
35
Frequency,
GHz
Частота, ГГц
Calculated
Frequency, GHz
Frequency, GHz
Measured and simulated data for Ka-band LNA (version 2)
• Suggested design method is proved to be effective for 1st iteration result.
40
Design flow diagram
25
dB(S(2,1))
20
15
10
5
0
15
20
25
30
35
freq, GHz
40
45
50
Comparison of designed LNA with world’s analogues
Band, GHz
Gain, dB
NF, dB
S11,
dB
S22,
dB
Power
supply
Chip size,
mm2
IUHFSE RAS
(Version 1)
37 - 44
18-20
2,5 - 3,3
-10 – -23
-10 – -24
2V,
60mА
1,25 х 1,1
IUHFSE RAS
(Version 1)
31 - 44
14-20
2,5 - 5
-5 – -23
-5 – -24
2V,
60mА
1,25 х 1,1
IUHFSE RAS
(Version 2)
28 – 36
18,5 – 22
3,0 – 3,7
-10 – -15
-14 – -22
Ug=0,4V
Ud=2V,
60mА
1,15 х 1,0
IUHFSE RAS
(Version 2)
25 – 40
17 – 22
2,8 – 4,0
-6 – -14
-5 – -22
Ug=0,4V
Ud=2V,
60mА
1,15 х 1,0
Mimix
XL1000-BD
20 – 40
17 – 21
2–4
-5 – -20
-5 – -17
3V, 35 mА
2,0х1,0
Avago
Technologies
AMMC-6241
26 – 43
17 – 22
2,6 – 3,3
-17 – - 25
3V,
60 mА
1,9 х 0,8
Triquint
TGA4507-EPU
28 – 36
20 – 25
2,1 – 2,3
-6 – -10
-6 – -23
3V,
60 mА
1,86 х 0,85
Triquint
TGA4508-EPU
30 – 42
20 – 21
2,7 – 3,2
-6 – -12
-15 – -27
3V,
40 mА
1,7 х 0,8
Hittite
HMC-ALH369
24 – 40
18 – 27
1,4 – 2,2
-10 – -20
-13 – -30
5V,
66 mА
2,1 x 1,37
Hittite
HMC-566
29 – 36
19– 23
2,5 – 3
-13 – -24
-8 – -10
3V,
80 mА
2,54 x 0,98
UMS CHA2394
36 – 40
19 – 21
2 – 2,5
-8 – -10
-12 – -25
3,5V,
60 mА
1,72x1,08
Name
-10 – -14
Comparison of designed LNA with world’s analogues
Gain and NF, dB
Gain
NF
Frequency, GHz
IUHFSE RAS (version 2)
Mimix XL1000-BD
5
4.5
Коэффициент
NF, dB шума, дБ
Avago Technologies
AMMC-6241
4
3.5
3
2.5
2
Расчет
Calculated
1.5
1
Measured
Измерение
0.5
0
25
30
35
Frequency,
Частота,
ГГц GHz
40
Evolution of calculation time
Intel Core2Duo, 2 threads, 3.4 GHz, 4 Gb RAM - ~ 20 - 25 minutes
AMD Phenom II X6 1090T, 6 threads, 3.2 GHz, 4Gb RAM – 120 sec (ADS 2008)
Intel Xeon X5690, 24 threads, 3.47 Ghz, 48 RAM (2 CPU) – 72 sec (ADS 2011)
AMD FX9 8150, 8-threads, 3.6 GHz, 12 Gb RAM – 57 sec
AMD Phenom II X6 110T, 6-threads, 3.3 Ghz, 8 Gb RAM – 53 sec
Intel Xeon E5-2687W, 32-threads, 3.1GHz, 32 Gb RAM (2 CPU) – 33 sec
Intel Core i7-3770K, 8-threads, 3.5 GHz, 8 Gb RAM – 25 sec
Conclusion
1. Custom Design flow based on EM calculations of entire layout is
developed.
2. Custom model builder tool is created.
3. Effectiveness of developed design approach is proved experimentally.
4. First in Russia LNA MMICs with competitive specifications are
successfully designed and manufactured in IUHFSE RAS.
Thank you for your attention