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Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS Tod Dickson University of Toronto June 9, 2005 Motivation Ever-growing bandwidth demands results in higher data rate broadband transceivers Next generation wireline applications will exceed 80-Gb/s. To date, serial transmitters at this data rate have not been demonstrated. High power consumption even an 40-Gb/s makes high levels of integration difficult. Reducing power consumption without sacrificing speed is a key challenge. T. Dickson University of Toronto June 24, 2005 HBT vs. MOS High-Speed Logic BiCMOS Cascode Lower supply voltage High speed due to intrinsic slew rate Requires high supply voltage (3.3V or more) T. Dickson University of Toronto Needs higher current for same speed No power savings June 24, 2005 Power reduction techniques BiCMOS logic family reduces supply voltage Reduce tail current with inductive peaking LP = CLDV2 3.1 IT2 10 mm Stacked inductors 43-Gb/s latch consumes only 20mW T. Dickson University of Toronto June 24, 2005 2.5-V, 10.7-to-86-Gb/s Serial Transmitter 40-GHz PLL Output Driver On-chip PRBS for BIST 8:1 MUX T. Dickson University of Toronto June 24, 2005 Die Photo & Measured Results 1.5mm 1.8mm Fabricated in 130-nm SiGe BiCMOS w/ HBT fT = 150 GHz T. Dickson Measured 86-Gb/s eye diagram • 2 x 275mVpp output swing • < 600fs rms jitter • 6ps rise/fall times (20%-80%) University of Toronto June 24, 2005 Comparison Supply Technology fT/fMAX Data Rate 130-nm CMOS 85/90 GHz 40-Gb/s (half-rate) 1.5 V 2.7 W InP HBT 150/150 GHz 43-Gb/s (full-rate) -3.6/ -5.2 V 3.6 W 180-nm SiGe BiCMOS HBT: 120/100 GHz 43-Gb/s (half-rate) -3.6 V 1.6 W 180-nm SiGe BiCMOS HBT: 120/100 GHz 43-Gb/s (full-rate) -3.6 V 2.3 W 86-Gb/s (half-rate) 2.5 V 1.36 W 130-nm SiGe BiCMOS MOS: 85/90 GHz HBT: 150/150 GHz T. Dickson University of Toronto June 24, 2005 Voltage Power Conclusions Demonstrated the first serial transmitter above 40-Gb/s in any semiconductor technology. Low-power operation achieved by employing BiCMOS high-speed logic family to reduce supply voltage. trading off bias current for inductive peaking. Adding a SiGe HBT to a CMOS process can result in a serial transmitter with twice the data rate and half the power dissipation. T. Dickson University of Toronto June 24, 2005