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Common-Base (CB) Amplifier * * * * Input at emitter, output at collector. ECES 352 Winter 2007 DC biasing ● Calculate IC, IB, VCE ● Determine related small signal equivalent circuit parameters Transconductance gm Input resistance rπ Midband gain analysis Low frequency analysis ● Gray-Searle (Short Circuit) Technique Determine pole frequencies ωPL1, ωPL2, ... ωPLn ● Determine zero frequencies ωZL1, ωZL2, ... ωZLn High frequency analysis ● Gray-Searle (Open Circuit) Technique Determine pole frequencies ωPH1, ωPH2, ... ωPHn ● Determine zero frequencies ωZH1, ωZH2, ... ωZHn Ch. 7 Frequency Response Part 3 1 CB Amplifier - DC Analysis (Same as CE Amplifier) * GIVEN: Transistor parameters: ● Current gain β = 200 ● Base resistance rx = 65 Ω ● Base-emitter voltage VBE,active = 0.7 V ● Resistors: R1=10K, R2=2.5K, RC=1.2K, RE=0.33K * Form Thevenin equivalent for base; given VCC = 12.5V ● RTh = RB = R1||R2 = 10K||2.5K = 2K ● VTh = VBB = VCC R2 / [R1+R2] = 2.5V ● KVL base loop IB = [VTh-VBE,active] / [RTh+(β +1)RE] IB = 26 μA DC collector current IC = β IB IC = 200(26 μ A) = 5.27 mA Transconductance gm = IC / VT ; VT = kBT/q = 26 mV gm = 5.27 mA/26 mV = 206 mA/V Input resistance rπ = β / gm = 200/[206 mA/V]= 0.97 K Check on transistor region of operation ● KVL collector loop ● VCE = VCC - IC RC - (β +1) IB RE = 4.4 V (okay since not close to zero volts). * * * R1 = 10K R2 = 2.5K RC = 1.2K RE = 0.33K ECES 352 Winter 2007 * Ch. 7 Frequency Response Part 3 2 CB Amplifier - Midband Gain Analysis * * * High and Low Frequency AC Equivalent Circuit Construct small signal ac equivalent circuit (set DC supply to ground) Substitute small signal equivalent circuit (hybrid-pi model) for transistor Neglect all capacitances ● Coupling and emitter bypass capacitors become shorts at midband frequencies (~ 105 rad/s) Why? Impedances are negligibly small, e.g. few ohms because CC1, CC2, CE ~ few μF (10-6F) 1 1 ZC 10 C (105 rad / s)(1F ) ● Transistor capacitances become open circuits at midband frequencies Why? Impedances are very large, e.g. ~ 10’s M Ω because Cπ , Cμ ~ pF (10-12 F) ZC * ECES 352 Winter 2007 1 1 107 5 C (10 rad / s)(1 pF ) Calculate small signal voltage gain Ch. 7 Frequency Response Part 3 AVo = Vo /Vs 3 CB Amplifier - Midband Gain Analysis V Ve I r rx r V r Ve rx r RL 9 K RC 1.2 K Iπ re + Ve _ RS 5K Equivalent resistance re Vo g mV RL RC g m RL RC 206mA / V 1.2 K 9 K 218 V V V r I 0.97 K 0.94 Ve I (rx r ) 0.97 K 0.065K RE re 0.33K 0.0051K 0.0050K 0.001 Ve Vs Rs RE re 5K 0.33K 0.0051K 5.0050 K AVo 218 0.940.001 0.20 V / V ECES 352 Winter 2007 R1 10K R2 2.5K V V V V AVo o o e Vs V Ve Vs AVo dB 20 log( 0.20) 14dB RE 0.33K βIπ Voltage gain is less than one ! re Ve Ie KCL at node E I e g mV V 0 r 1 I e V g m r 1 g m r V r r r r V V r re e e x Ie V 1 g m r r 1 g m r Ch. 7 Frequency Response Part 3 rx r r r 0.065 K 0.97 K x 0.0051 K 1 g m r 1 1 200 4 What Happened to the CB Amplifier’s Midband Gain? + Ve _ re AVo 2180.940.001 0.20 V / V RE re 0.33K 0.0051K Ve 0.0050K 0.001 Vs Rs RE re 5 K 0.33K 0.0051K 5.0050K New signal source with low resistance For Rs 5 RE re 0.33K 0.0051K Ve 0.0050K Vs Rs RE re 0.005K 0.33K 0.0051K 0.005K 0.005K and AVo 218 0.940.5 102.5 V / V AVo (dB) 20 log(102.5) 40.2dB ECES 352 Winter 2007 * Source resistance Rs = 5K is killing the gain. ● Why? Rs >> re = 0.0051 K so Ve/Vs<<1 * Need to use a different signal source with a very low source resistance Rs , i.e. ~ few ohms * Why is re so low? ● Vs drives formation of Ve ● Ve creates Vπ across rπ ● Vπ turns on dependent current source 0.5 ● Get large Ie for small Ve so re =Ve/Ie is very small. Voltage gain is now much bigger than one ! Ch. 7 Frequency Response Part 3 5 Analysis of Low Frequency Poles Gray-Searle (Short Circuit) Technique * Draw low frequency AC circuit ● ● ● Substitute AC equivalent circuit for transistor (hybrid-pi for bipolar transistor) Include coupling and base capacitors CC1, CC2, CB Ignore (remove) all transistor capacitances Cπ , Cμ * Turn off signal source, i.e. set Vs= 0 ● Keep source resistance RS in circuit (do not remove) * Consider the circuit one capacitor Cx at a time ● ● ● ● Replace all other capacitors with short circuits Solve remaining circuit for equivalent resistance Rx seen by the selected capacitor 1 Calculate pole frequency using Px R C x x Repeat process for each capacitor finding equivalent resistance seen and the corresponding pole frequency * Determine the dominant (largest) pole frequency * Calculate the final low pole frequency using LP ECES 352 Winter 2007 Px P1 P 2 ... Pn Ch. 7 Frequency Response Part 3 1 RxC x 6 Common Base - Analysis of Low Frequency Poles Gray-Searle (Short Circuit) Technique Low Frequency AC Equivalent Circuit RxC B RB rx Ri Ri * Vo Vπ Vi 2 K 0.065K 0.97 K 2010.33K 0.005K 2 K 2.03K 1.0 K C B RxC B 12 F 1.0 K 1.2 x10 2 sec PL1 RxCB V r RxC B RB rx r 1 g m r RE RS Iπ + sin ce I 1 Vi V I g mV RE RS V 1 g m RE RS r 1 V 1 g m RE RS r r 1 g r R R Ri r m E S V Base capacitor CB = 12 μF Vx Ix Vi Vi V r i I V / r V 1 RxC B C B 1 83 rad / s 1.2 x10 2 _ Ri ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 7 Common Base - Analysis of Low Frequency Poles Gray-Searle (Short Circuit) Technique Input coupling capacitor CC1 = 2 μF V RxCC1 x Rs RE re Ix V re e Ie I e I g mV 1 g m r I Ve I rx r r r V I rx r re e x I e 1 g m r I 1 g m r r r RxCC1 Rs RE x 1 g m r Iπ Vo 0.065K 0.97K 0.005K 0.33K 201 Vπ Ve 0.005K 0.0051K 0.010K CC1RxCC1 2 F 0.010K 2.0 x105 sec 1 1 PL2 5.0 x104 rad / s 5 CC1RxCC1 2.0 x10 sec ECES 352 Winter 2007 Vx Ie re + Ve _ Ch. 7 Frequency Response Part 3 Ix Rs 8 Common Base - Analysis of Low Frequency Poles Gray-Searle (Short Circuit) Technique * Output coupling capacitor CC2 = 3 μF VX PL PL1 PL2 PL3 Vo RC * Low 3dB frequency 83 50,000 33 50,116 rad / s RL Dominant low frequency pole is due to CC1 ! RC 2 RL RC 9 K 1.2 K 10.2 K 1 1 PL3 33 rad / s RC 2CC 2 10.2 K 3F ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 9 Common Base - Low Frequency Zeros Iπ * * * * What are the zeros for the CB amplifier? For CC1 and CC2 , we get zeros at ω = 0 since ZC = 1 / jωC and these capacitors are in the signal line, i.e. ZC at ω = 0 so Vo 0. Consider RB in parallel with CB Impedance given by ZL1 ZL 2 ZL 3 1 1 1 s ZL1 s ZL 2 s ZL 3 s s s FL ( s ) s PL1 s PL2 s PL3 1 PL1 1 PL2 1 PL3 s s s Z B' RB Z CB 1 01 01 ZL 3 s 83 33 50,000 1 1 1 s s s 42 1 s FL ( s ) 83 33 50,000 1 1 1 s s s Z B' ECES 352 Winter 2007 1 1 1 1 1 sRB C B sC B ' Z B RB Z CB RB RB * * RB 1 sRB C B When Z’B , Iπ 0, so gmVπ 0, so Vo 0 Z’B when s = - 1 / RBCB so pole for CB is at ZL 3 Ch. 7 Frequency Response Part 3 1 1 42 rad / s RB CB 2 K 12F 10 Common Base - Low Frequency Poles and Zeros Magnitude Bode Plot ZL1 0, ZL 2 0, ZL 3 42 42 42 1 1 j PL1 83 s A( ) 102.5 102.5 83 33 50,000 PL 2 33 83 33 50,000 1 1 1 1 j 1 j 1 j s s s PL3 50,000 AMo (dB) 20 log 102.5 40.2dB 42 2 83 2 33 2 50,000 2 A(dB) 40.2dB 10 log 1 10 log 1 10 log 1 10 log 1 ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 11 Common Base - Low Frequency Poles and Zeros Phase Shift Bode Plot 42 42 1 1 j s A( ) 102.5 102.5 83 33 50,000 83 33 50,000 1 1 1 1 j 1 j 1 j s s s ZL1 0, ZL 2 0, ZL 3 42 PL1 83 PL2 33 PL3 50,000 42 1 83 1 33 1 50,000 tan tan tan ( ) tan 1 ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 12 Analysis of High Frequency Poles Gray-Searle (Open Circuit) Technique * * * Draw high frequency AC equivalent circuit ● Substitute AC equivalent circuit for transistor (hybrid-pi model for transistor with Cπ, Cμ) ● Consider coupling and emitter bypass capacitors CC1, CC2, CB as shorts ● Turn off signal source, i.e. set Vs = 0 ● Keep source resistance RS in circuit ● Neglect transistor’s output resistance ro Consider the circuit one capacitor Cx at a time ● Replace all other transistor capacitors with open circuits ● Solve remaining circuit for equivalent resistance Rx seen by the selected capacitor 1 ● Calculate pole frequency using PHx RxC x ● Repeat process for each capacitor Calculate the final high frequency pole using PH ECES 352 Winter 2007 1 Px 1 1 1 1 ... PHn PH1 PH 2 Ch. 7 Frequency Response Part 3 1 1 R C x x 13 Common Base - Analysis of High Frequency Poles Gray-Searle (Open Circuit) Technique High frequency AC equivalent circuit NOTE: We neglect rx here since the base is grounded. This simplifies our analysis, but doesn’t change the results appreciably. ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 14 Common Base - Analysis of High Frequency Poles Gray-Searle (Open Circuit) Technique Ze Ve Ie Ve V KCL at node E gives 1 Ve Ve g mV Ve sC g m r 1 r sC 1 g m r Ve sC r Ie Ze + Ve _ Replace this with this. * Equivalent circuit for Ze Ve Ie Ve 1 1 g m r 1 g m r Ve sC sC r r r 1 1 sC 1 g m r 1 1 r 1 sC Parallel combination 1 g m r Ze So Z e re Z C of a resistor and capacitor. where Ze ECES 352 Winter 2007 re r r 1 gmr 1 Ch. 7 Frequency Response Part 3 15 Common Base - Analysis of High Frequency Poles Gray-Searle (Open Circuit) Technique Turn off signal source when finding resistance seen by capacitor. * Pole frequency for Cπ =17pF RxC re RE Rs re r 0.97K 0.0048K 4.8 1 g m r 1 200 RxC 0.0048K 0.33K 0.005K 0.0024K 2.4 PH1 ECES 352 Winter 2007 1 RxC C 1 1 2.5 x1010 rad / s 2.417 pF 4.1x1011 s Ch. 7 Frequency Response Part 3 16 Common Base - Analysis of High Frequency Poles Gray-Searle (Open Circuit) Technique * Pole frequency for Cμ =1.3pF RxC RC RL RxC 1.2 K 9 K 1.05K PH 2 * Equivalent circuit for Capacitor Cμ = 1.3 pF =0 1 RxC C 1 1 7.1x108 rad / s 1.05K 1.3 pF 1.4 x109 s * High 3 dB frequency PH 1 1 RxC C RxC C 4.1x10 11 1.4 x10 9 PH 1 8 6 . 9 x 10 rad / s 1.44 x10 9 s Rs || RE || r π ECES 352 Winter 2007 Dominant high frequency pole is due to Cμ ! Ch. 7 Frequency Response Part 3 17 Common Base - High Frequency Zeros * * What are the high frequency zeros for the CB amplifier? Voltage gain can be written as V V V AV o o Vs V Vs * * * * ECES 352 Winter 2007 When Vo/Vπ 0, we have found a zero. For Cμ , we get Vo 0 when ω since the output will be shorted to ground thru Cμ . Similarly,we get a zero from Cπ when when ω since ZC π = 1/sCπ 0, so the voltage Vπ 0. Both Cπ and Cμ give high frequency zeros at ω ! Ch. 7 Frequency Response Part 3 18 Common Base - High Frequency Poles and Zeros Magnitude s s 1 1 A( s ) 102.5 s s 1 1 10 8 2.5 x10 7.1x10 A( ) 102.5 1 1 j 1 j 10 2.5 x10 7.1x108 ZH 1 ZH 2 10 PH 1 2.5 x10 8 PH 2 7.1x10 AMo (dB ) 20 log 102.5 40.2dB 2 2 A(dB ) 40.2dB 10 log 1 10 log 1 10 8 2.5 x10 7.1x10 ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 19 Common Base - High Frequency Poles and Zeros Phase Shift s s 1 1 A( s) 102.5 s s 1 1 10 8 2.5 x10 7.1x10 A( ) 102.5 1 1 j 1 j 10 2.5 x10 7.1x108 ZH 1 ZH 2 10 PH 1 2.5 x10 PH 2 7.1x108 tan 1 10 8 2.5 x10 7.1x10 ( ) tan 1 ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 20 Comparison of CB to CE Amplifier CE (with RS = 5K) Midband Gain CB (with RS = 5Ω) r rx r RB V V V V AVo o o i g m RL RC Vs V Vi Vs rx r Rs rx r RB AVo 2180.940.12 24.6 V / V AVo dB 20 log( 24.6 ) 27.7dB ZP1 ZP 2 0 Low Frequency Poles and Zeros 1 1 PL1 88 rad / s RS RB rx r CC1 5.7 K 2F PL2 PL3 RE rx r Rs RB C E 1 ZH 1 , ZH 2 High Frequency Poles and Zeroes PH 1 PH 2 1 5,342 rad / s 0.016K 12F g m 206 mA / V 1.6 x1011 rad / s C 1.3 pF 1 1 1.0 x108 rad / s r rx RB RS C 0.59 K 17 pF 1 1 1 r rx RB RS C RC RL 1 g m RC RL 1 5.9 x106 rad / s 130 K 1.3 pF ECES 352 Winter 2007 ZP1 ZP 2 0 PL1 ZP 3 1 1 42 rad / s RBCB 2 K 12F 1 RB rx r 1 gmr RE RS CB 1 PL2 1 1 33 rad / s RL RC CC 2 10.2K 3F 1 AVo dB 40.2dB 1 1 ZP 3 252 rad / s RE C E 0.33K 12F RE re r V V V AVo o e g m RL RC V Ve Vs Rs RE re rx r AVo 218 0.940.5 102.4 V / V 1 83 rad / s 12F 1K 1 5.0 x104 rad / s 2F 0.010K r r CC1 Rs RE x 1 g m r 1 1 PL3 33 rad / s RL RC CC 2 10.2K 3F ZH 1 , ZH 2 1 1 2.5 x1010 rad / s re RE Rs C 2.417 pF PH 1 PH 2 1 1 7.1x108 rad / s RC RL C 1.05K 1.3 pF Ch. 7 Frequency Response Part 3 Note: CB amplifier has much better high frequency performance! 21 Comparison of CB to CE Amplifier (with same Rs = 5 Ω) CE (with RS = 5 Ω) r rx r RB Vo Vo V Vi g m RL RC Vs V Vi Vs rx r Rs rx r RB AVo 2180.940.93 191 V / V AVo Midband Gain AVo dB 20 log( 191 ) 45.6dB ZP1 ZP 2 0 Low Frequency Poles and Zeros ZP 3 ZP1 ZP 2 0 1 1 RS RB rx r CC1 0.7 K 2F 714 rad / s PL1 PL 2 1 1 33 rad / s RL RC CC 2 10.2 K 3F PL2 RE rx r Rs RB C E 1 ZH 1 , ZH 2 PH 1 PH 2 1 1.7 x10 4 rad / s 0.005K 12F g m 206 mA / V 1.6 x1011 rad / s C 1.3 pF 1 1 9.0 x108 rad / s r rx RB RS C 0.065K 17 pF 1 1 1 r rx RB RS C RC RL 1 g m RC RL 1 5.0 x107 rad / s 15.4 K 1.3 pF ECES 352 Winter 2007 AVo dB 40.2dB 1 1 252 rad / s RE C E 0.33K 12 F 1 RE re r V V V AVo o e g m RL RC V Ve Vs Rs RE re rx r AVo 218 0.940.5 102.4 V / V PL1 PL3 High Frequency Poles and Zeroes CB (with RS = 5Ω) ZP 3 1 1 42 rad / s RBCB 2 K 12F 1 RB rx r 1 gmr RE RS CB 1 1 83 rad / s 12F 1K 1 5.0 x104 rad / s 2F 0.010K r r CC1 Rs RE x 1 g m r 1 1 PL3 33 rad / s RL RC CC 2 10.2K 3F ZH 1 , ZH 2 1 1 2.5 x1010 rad / s re RE Rs C 2.417 pF PH 1 PH 2 1 1 7.1x108 rad / s RC RL C 1.05K 1.3 pF Ch. 7 Frequency Response Part 3 Note: CB amplifier has much better high frequency performance! 22 Conclusions * Voltage gain ● Can get good voltage gain from both CE and CB amplifiers. ● Low frequency performance similar for both amplifiers. ● CB amplifier gives better high frequency performance ! CE amplifier has dominant pole at 5.0x107 rad/s. CB amplifier has dominant pole at 7.1x108 rad/s. * Bandwidth approximately 14 X larger! * Miller Effect multiplication of C by the gain is avoided in CB configuration. * Current gain ● For CE amplifier, current gain is high AI = Ic / Ib ● For CB amplifier, current gain is low AI = Ic / Ie (close to one)! ● Frequency dependence of current gain similar to voltage gain. * Input and output impedances are different for the two amplifiers! ● CB amplifier has especially low input resistance. ECES 352 Winter 2007 Ch. 7 Frequency Response Part 3 23