Download bjt characterisation

For, 2N2222 transistor, Vdd = 1.8 volts
For Area = 20 x 10-3 m2 (fixed)
and
IC = 1nA to 1mA
At 1mA
At 1nA
βac
81.70
5.03
βdc
100.5
2.07
gm
30.06m
26.3n
Vce
792.23m
373.98m
Intrinsic gain (gm*ro)
2.78k
3.6168k
294.77M
4.78k
92.755k
138G
fT
ro
For Area = 5 x 10-3 m2 (fixed)
and
IC = 1nA to 1mA
At 1mA
At 1nA
βac
37.64
13.08
βdc
58.68
5.59
gm
24.1m
37n
Vce
1.045
417.643m
Intrinsic gain (gm*ro)
2.17k
3.96k
309.19M
26.146k
90.457k
105.265G
fT
ro
For Area = 5 x 10-6 m2 (fixed)
and
IC = 1nA to 1mA
At 1m
At 1n
βac
6.083
42.2481
βdc
11.75
20.83
gm
18.32m
40.35n
Vce
9.5
480.57m
Intrinsic gain (gm*ro)
1.864k
3.5593k
316.442M
273.958k
102Kohm
91G
fT
ro