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gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz Doc. Rev. A01-17 5 dB NF Point-to-point communication E2-band coverage Instrumentation 24 dBm OIP3 Fiber over radio 23 dB gain 77 GHz radar gANZ0033 is a Low Noise Amplifier (LNA) in the E2 (81-86 GHz) frequency band suitable for point-to-point communication. The LNA features 5 dB Noise Figure and very flat frequency response. Furthermore, the LNA has high gain, high linearity and low input/output return loss. Figure 1. Block diagram of the LNA. For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/ gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz Doc. Rev. A01-17 Table 1. Electrical performance TA=25°C Parameter Min Frequency Gain NF P1dB PSAT OIP3 PAE Input return loss Output return loss Power consumption 81 (77) 21 9 12 19 Typ 23 5 10 13 20 Max Unit 86 25 GHz dB dB dBm dBm dBm % dB dB mW 11 14 21 10 15 142 The chip has been measured on-wafer using CW and 2-tone input test signals. The LNA uses typical bias settings if not specified differently. Table 2. Test conditions Parameter Setting RF input power RF input frequency Frequency separation Temperature -25 dBm/tone 83.5 GHz 10 MHz 25°C For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/ gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz 0 -30 -5 -40 S12 [dB] S11 [dB] Doc. Rev. A01-17 -10 -15 -20 0 -60 20 40 60 80 Freq [GHz] -70 0 100 120 30 40 60 80 Freq [GHz] 100 120 20 40 60 80 Freq [GHz] 100 120 -5 10 S22 [dB] S21 [dB] 20 0 20 0 -10 -10 -15 -20 -30 0 -50 20 40 60 80 Freq [GHz] -20 0 100 120 0 -30 -5 -40 S12 [dB] S11 [dB] Figure 2. Small signal response from 0-120 GHz at nominal bias. (Upper left): Input matching. (Upper right): Reverse isolation. (Lower left): Small-signal gain. (Lower right): Output matching. -10 -15 -20 77 -50 -60 81 86 Freq [GHz] 90 -70 77 81 86 Freq [GHz] For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/ 90 gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz 30 0 25 -5 S22 [dB] S21 [dB] Doc. Rev. A01-17 20 15 10 77 -10 -15 81 86 Freq [GHz] -20 77 90 81 86 Freq [GHz] 90 Figure 3. Small signal response within the E2-band at nominal bias. (Upper left): Input matching. (Upper right): Reverse isolation. (Lower left): Small-signal gain. (Lower right): Output matching. 10 NF [dB] 8 6 4 2 0 70 75 80 85 Freq [GHz] 90 Figure 4. : NF vs freq. For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/ gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz Doc. Rev. A01-17 Bias should first be applied to the gates (VG…) followed by the drains (VD…). The gate voltages must be adjusted within the min/max range indicated in Table 3-5 to obtain the specified drain currents. The drain currents are stated with no input signal. Table 3. Electrical settings on connector P1 Connector P1 NC VD2 VG2 GND VD1 VG1 NC Pad No. 1 2 3 4 5 6 7 Bias settings (V/mA) I/O Min Typ Max 1.9 -0.7 2.0 / 65 -0.5 2.1 -0.3 1.1 -0.7 1.2 / 10 -0.5 1.3 -0.3 NC Input Input Ground Input Input NC Table 4. Electrical settings on connector P2 Connector P2 GND RF_OUT GND Pad No. 1 2 3 Interface Z0 = 50 Ohm, AC coupled I/O Ground Output Ground Table 5. Electrical settings on connector P3 Connector P3 GND RF_IN GND Pad No. 1 2 3 Interface Z0 = 50 Ohm, AC coupled For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/ I/O Ground Input Ground gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz Doc. Rev. A01-17 Table 6. Absolute maximum ratings Gate-source voltage Drain-source voltage Gate-drain breakdown voltage ID2 ID1 RF input power Operating temperature Storage temperature -2 to +0.7 V 4.5 V 8V 120 mA 50 mA +15 dBm -40 to + 85°C -65 to +150°C For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/ gANZ0033 C E2-band LNA MMIC 81-86(77-86) GHz Doc. Rev. A01-17 Mechanical drawing with pad locations is also available in dxf-file format on the web. The substrate thickness is 50 µm (GaAs). Figure 5. Outline drawing of the MMIC. Dimensions are in um. For more information, prices or to place orders please contact [email protected] Data and specification are subject to change without notice © 2017 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/