Download AB1520AD

AB1520AD
2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER
FEATURES:
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PACKAGE - BARE DIE
15dB Gain
Low Noise Amplifier
Single Supply +5V @ 90mA
15dBm P1dB Output Power at 20GHz
pHEMT Technology
Input Return Loss<-12dB
Output Return Loss<-10dB
100% RoHS
Compliant
VDD
RF
Input
GENERAL DESCRIPTION:
RF
Output
TYPICAL APPLICATIONS:
The AB1520AD is a high performance 2GHz to
20GHz Gallium Arsenide monolithic travelling wave
amplifier. It is suitable for use in broadband
communication, instrumentation, and electronic
warfare applications. The die is fabricated using our
0.25μm process. The circuit is DC-blocked at both
the RF input and the RF output.
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Test Instrumentation
Electronic Warfare
Broadband Communication Infrastructure
Fibre Optics
TYPICAL PERFORMANCE:
PARAMETER
Min.
Specification
Typ.
Max
Unit
ELECTRICAL SPECIFICATIONS
(SMALL-SIGNAL UNLESS NOTED)
SMALL SIGNAL GAIN
Condition
TAMBIENT=25°C, Z0=50Ω PADS B AND C
OPEN CIRCUIT
15
18
dB
2GHZ TO 20GHZ
INPUT RETURN LOSS
-12
-10
dB
2GHZ TO 20GHZ
OUTPUT RETURN LOSS
-12
-10
dB
2GHZ TO 20GHZ
OUTPUT POWER AT P1dB COMPRESSION
12
15
17
dBm
2GHZ, 5V DRAIN BIAS
15
17
dBm
10GHZ, 5V DRAIN BIAS
12
15
dBm
20GHZ, 5V DRAIN BIAS
DRAIN CURRENT
90
mA
5V DRAIN BIAS
NOISE FIGURE
3.5
dB
2GHZ, 5V DRAIN BIAS
3
dB
10GHZ, 5V DRAIN BIAS
6.5
dB
20GHZ, 5V DRAIN BIAS
POINT
Note: THE DEVICE HAS A DEFAULT CURRENT, SET BY AN ON-CHIP RESISTOR. PADS B AND C CAN BE BONDED TO GROUND TO INCREASE THE DEVICE CURRENT BY
REDUCING THE DEFAULT RESISTANCE.
Page 1 of 4
Tel: +44 (0) 1325 301111
Compound Photonics
www.compoundphotonics.com
[email protected]
Revision 1.0
AB1520AD
2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER
ABSOLUTE MAXIMUM RATING1:
PARAMETER
RATING
UNIT
MAXIMUM INPUT POWER (PIN)
+20
dBm
DRAIN VOLTAGE (VDD)
+12
V
OPERATING TEMPERATURE (TOPER)
-55 TO 85
°C
STORAGE TEMPERATURE (TSTOR)
-55 TO 150
°C
Caution! ESD sensitive device
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended application
of Absolute Maximum Rating conditions to the device may reduce device
reliability. Specified typical performance or functional operation of the device
under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document
revision)
The information in this publication is believed to be accurate and reliable.
However, no responsibility is assumed by Compound Photonics for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any
patent or patent rights of Compound Photonics. Compound Photonics
reserves the right to change component circuitry, recommended application
circuitry and specifications at any time without prior notice.
0.050
0.134
0.185
0.269
2.966
3.066
PAD LAYOUT
1.500
1.443
1.369
PAD
G F E
Die Identifier
1.141
1.041
D
0.530
0.430
A
0.506
0.422
0.385
0.301
C
B
0 REF
3.120
2.914
2.988
0 REF
0.054
0.154
Dimensions in mm.
NAME
DESCRIPTION
A
IN
RF INPUT
B
R2
INTERNAL SOURCE BIAS RESISTOR
C
R1
INTERNAL SOURCE BIAS RESISTOR
D
OUT
RF OUTPUT
E
GND
GROUND
F
VD
DRAIN VOLTAGE
G
VG
OPTIONAL GATE VOLTAGE
DIE SIZE (µm)
DIE THICKNESS (µm)
MIN. BOND PAD PITCH (µm)
MIN. BOND PAD OPENING (µmxµm)
3120 X 1500
100
122
72 X 62
Page 2 of 4
Tel: +44 (0) 1325 301111
Compound Photonics
www.compoundphotonics.com
[email protected]
Revision 1.0
AB1520AD
2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER
BIASING CIRCUIT SCHEMATIC
ASSEMBLY DIAGRAM
It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of
300µm. Ground connections should be made according to the required bias conditions
To Evaluation Board via an 0402 Surface
Mounted capacitor (100nF)
100pF Chip Capacitor
Ground connection
Die Identifier
User application
50 Ohms line
User application
50 Ohms line
BILL OF MATERIALS
DIE
THICKNESS
(µm) MATERIAL
ALL RF TRACKS
SHOULD
BE 50 CHARACTERISTIC
MIN.
BOND
PADCHIP
PITCH
(µm)
CAPACITOR
, 100pF,
CAPACITOR
MIN. BONDCAPACITOR
PAD OPENING
, 100nF, 0402 (µmxµm)
Page 3 of 4
Tel: +44 (0) 1325 301111
Compound Photonics
www.compoundphotonics.com
[email protected]
Revision 1.0
AB1520AD
2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge
bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C.
Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the
bondwires should be minimised especially when making RF or ground connections.
HANDLING PRECAUTIONS:
To avoid damage to the devices, care should be exercised during handling. Proper
Electrostatic Discharge (ESD) precautions should be observed at all stages of storage,
handling, assembly, and testing.
ESD/MSL RATING:
These devices should be treated as Class 0 (0V - 250V) using the human body model as defined in JEDEC Standard No.
JS-001-2012 and subsequent revisions of this standard
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged
part and therefore no MSL rating applies.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-parameters, noise parameters and device model are available on request.
RELIABILITY:
A MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
Page 4 of 4
Tel: +44 (0) 1325 301111
Compound Photonics
www.compoundphotonics.com
[email protected]
Revision 1.0