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Bipolar Junction Transistors (BJTs) 1 Introduction - The invention of the BJT in 1947 at the Bell Laboratories ushered in the era of solid-state circuits. Bardeen, Shockley, and Brattain at Bell Labs - Brattain and Bardeen invented the bipolar transistor in 1947. Microelectronic Circuits - Fifth Edition Sedra/Smith The first germanium bipolar transistor. Roughly 50 years later, electronics account for 10% (4 trillion dollars) of the world GDP. Copyright 2004 by Oxford University Press, Inc. 2 • BJT >> MOSFET until 1980s. Now, BJT << MOSFET, CMOS • Nevertheless, the BJT remains a significant device that excels in certain applications. - For instance, the reliability of BJT circuits under severe environmental conditions makes them the dominant devices in automobile electronics, an important and still-growing area. - The BJT remains popular in discrete-circuit design, in which a very wide selection of BJT types are available to the design. • The characteristics of the BJT are so well understood that we can design transistor circuits whose performance is remarkably predicted and quite insensitive to variations in device parameters. • The BJT is still preferred device in RF circuits, very-high-speed digital logic circuit family, such as emitter-coupled logic. • BJT+CMOS = BiCMOS : high-input impedance, low-power operation (MOSFET) very-high-frequency operation, high-current-driving capability (BJT) Chap. 6, 7, 9, 11 Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 3 5.1 Device Structure and Physical Operation Figure 5.1 A simplified structure of the npn transistor. • Electrons and holes participate in the current-conduction process. – Bipolar! Figure 5.2 A simplified structure of the pnp transistor. Microelectronic Circuits - Fifth Edition Switch Amplifier Limited application Sedra/Smith Switch Copyright 2004 by Oxford University Press, Inc. 4 5.1.2 Operation of the npn Transistor in the Active Mode Thin enough to neglect recombination. Very thin! 1. Due to forward-biased EB junction, current flows. - Base current by recombined holes and electrons. (small) - This means E, B act as a resistance that is function of the base voltage VBE. Heavily doped emitter Lightly doped base V V 2. Then, electrons from VCB arrives at BC junction. 3. Electrons flow to C due to VCB . 4. Collector current from C to E! Figure 5.3 Current flow in an npn transistor biased to operate in the active mode. 5. This Ic is a function of base voltage! (Reverse current components due to drift of thermally generated minority carriers are 6. Amplifier if VCE > VBE!!! not shown.) Diode equation np (0) np0eBE / VT (5.1) Electron diffusion current in the base reion E 0 I n A E qDn E E E 0 E 0 dn p ( x ) dx n p (0) A E qDn W (5.2) Should be zero since the positive collector voltage causes the electron at the end to be swept across CBJ depletion region. Figure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn transistor operating in the active mode: vBE > 0 and vCB 0. Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 5 Diode equation np (0) np0eBE / VT (5.1) • The Collector Current Electron diffusion current in the base reion n p (0) I n A E qDn W (5.2) saturation current I S A E qDn n p 0 / W A E qDn ni2 n po n / N A I S N AW 2 i (5.4) Since base region is very thin and lightly doped, iC I n I S e BE / VT * IC is; - inversely proportional to the base width W. - Proportional to the area of the EBJ (scale current). - Typically in the range of 10-12 A to 10 -18 A. - Proportional to ni2. (doubling for every 5oC rise) E n i2 BT 3 exp G cm -6 kT Microelectronic Circuits - Fifth Edition Sedra/Smith cf ) iB2 Qn b iD 1 W kn (GS Vt )2 2 L (5.6) Qn AE q 12 np (0)W - Base current = current due to holes injected from base to emitter.(iB1) + current due to holes to supply recombined holes (iB2). (5.5) iC is independent of CB ! b : minority-carrier life time • The Base Current A E qDn ni2 BE / VT i B1 e N D Lp (5.3) A E qWni2 BE / VT Qn e 2NA 1 A E qWni2 BE / VT iB2 e 2 b NA Copyright 2004 by Oxford University Press, Inc. (5.7) (5.8) 6 Dp N A W 1 W 2 / V iB I S e BE T Dn N D Lp 2 Dn b iC I n I S e BE / VT iB BE / VT e iC (5.11) 1 iC iE (5.3) Dp N A W 1 W 2 1 D N L 2 D n b n D p I iB S (5.9) (5.12) 1 (5.17) Common-base current gain (5.16) iE I S eBE / VT (5.18) cf ) i D i S (5.19) 100, 0.99 Recapitulation and Equivalent Circuit model (5.10) npn transistor 50~1000 common emitter current gain * β is; - Highly depend on the base width W. - Highly depend on relative dopings (NA/ND) • The Emitter Current i E iC iB (5.13) 1 iE i C iE 1 I e S 100, 0.99 (5.14) BE / VT iC iE (5.15) Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 7 5.1.3 Structure of Actual Transistors In reverse active mode, R =0.01~0.5, R =0.01~1 Scale currents F I SE R I SC =I S (5.20) Figure 5.6 Cross-section of an npn BJT. Figure 5.7 Model for the npn transistor when operated in the reverse active mode (i.e., with the CBJ forward biased and the EBJ reverse biased). Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 8 5.2 Current-Voltage Characteristics 5.2.1 Circuit Symbols and Conventions An npn transistor whose EBJ is forward biased will operate in the active mode as long as the collector voltage does not fall below that of the base by more than 0.4 V. Otherwise, saturation mode. An pnp transistor whose EBJ is forward biased will operate in the active mode as long as the collector voltage does not allowed to rise above that of the base by more than 0.4 V. Otherwise, saturation mode. BJT voltage-current relationship in the active mode Figure 5.13 Circuit symbols for BJTs. Figure 5.14 Voltage polarities and current flow in transistors biased in the active mode. Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 9 EXAMPLE 5.1 100 BE 0.7 V@iC 1 mA Design the circuit such that iC =2 mA, υC =5 V. Figure 5.15 Circuit for Example 5.1. CBJ is reverse biased, active mode! RC 10 V 5 k 2 mA 2 VBE 0.7 VT ln 0.717 V 1 VE 0.717 V IE IC 2 2.02 mA 0.99 Microelectronic Circuits - Fifth Edition RE VE ( 15) IE 0.717 15 7.07 k 2.02 Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 10 5.2.3 Dependence of iC on the Collector Voltage -The Early Effect Due to the change of effective base width cf) channel length modulation in MOSFET Common Emitter Configuration iC I S e BE / VT Figure 5.19 (a) Conceptual circuit for measuring the iC –vCE of the BJT. (b) The iC –vCE characteristics of a practical BJT. i ro C CE characteristics ro VA IC iC I S e BE / VT 1 CE VA 1 BE =constant (5.38a) (5.37) ro I C I S e BE / VT (5.36) VA VCE IC (5.38) (5.38b) It is rarely necessary to include the dependence of iC on υCE in dc bias design and analysis. However, The finite output resistance can have a significant effect on the gain. Figure 5.20 Large-signal equivalent-circuit models of an npn BJT operating in the active mode in the common-emitter configuration. Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 11 5.2.4 The Common-Emitter Characteristics. The Common-Emitter Current gain β iB dc ac I CQ I BQ iC iB iC (5.10) (5.39) Large-signal or dc (data sheet hFE ) (5.40) Incremental or ac (dtat sheet h fe ) CE constant dc and ac differtypically by approximately 10% to 20% In this book, dc = ac F = Figure 5.21 Common-emitter characteristics. Note that the horizontal scale is expanded around the origin to show the saturation region in some detail. VCEsat and RCEsat ΔiC For the same I B , iC in active region (amp) > iC in saturation region(switch) ΔiC Therefore, β in saturation mode is smaller than β in active mode! To make a transistor operate in saturation mode (switch mode, given IC=ICsat), designer should establish VCE≈0.1~0.2 V, and forced = Figure 5.23 An expanded view of the common-emitter Microelectronic Circuits - Fifth Edition Sedra/Smith characteristics in the saturation region. ICsat < F IB (5.41, 42) Copyright 2004 by Oxford University Press, Inc. 12 Figure 5.24 (a) An npn transistor operated in saturation mode with a constant base current IB. (b) The iC–vCE characteristic curve corresponding to iB = IB. The curve can be approximated by a straight line of slope 1/RCEsat. (c) Equivalent-circuit representation of the saturated transistor. (d) A simplified equivalent-circuit model of the saturated transistor. RCEsat CE iC (a few tens Ohm) (5.43) iB I B iC ICsat Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 13 5.3 The BJT as an Amplifier and as a Switch Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 14 5.3.1 Large-Signal Operation-The Transfer Characteristic Figure 5.26 (a) Basic common-emitter amplifier circuit. (b) Transfer characteristic of the circuit in (a). The amplifier is biased at a point Q, and a small voltage signal vi is superimposed on the dc bias voltage VBE. The resulting output signal vo appears superimposed on the dc collector voltage VCE. The amplitude of vo is larger than that of vi by the voltage gain Av. RC : to establish a desired dc bias voltage. to convert the collector signal current ic to an output voltage. O CE VCC RC iC (5.50) For 0 <I 0.5, cutoff, iC 0, O VCC For I > 0.5 and O > I ( BE ) 0.4, active mode iC I S e BE / VT I S e I / VT O VCC RC I S e I / VT (5.51) } For I > 0.5 and O I ( BE ) 0.4, saturation mode CE ( O ) VCEsat (0.1 ~ 0.2 V), ICsat Microelectronic Circuits - Fifth Edition Sedra/Smith VCC VCEsat RC } (5.52) Copyright 2004 by Oxford University Press, Inc. 15 5.3.2 Amplifier Gain Q (quiescent) point determined by a bias voltage, RC and VBE. We know I C I S e BE /VT (5.53) for BJT, VCE VCC RC IC (5.54) for circuit. Now, I VBE i Then, A d O d I (5.55) I VBE 1 I S eVBE /VT RC (inverting amp!) VT I R V Using (5.54), A C C RC (5.56) VT VT Using (5.53), A where VRC VCC VCE (5.57) - The voltage gain of CE amp is the ratio of the dc voltage drop across RC to the thermal voltage VT (~25 mV at room temp). - For a given VCC, to increase VRC, we have to operate at a lower VCE. - But, too low VCE results in negative peaks of output will be flattened. Theoretical maximum voltage gain (ignoring no negative swing), V V VCEsat A max CC (5.59) A CC (5.58) VT VT Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 16 EXAMPLE 5.10 1. Find Thevenin’s equivalent circuit of base bias circuit. RB 2 50 15 5 V RB1 RB 2 100 50 ( RB1 // RB 2 ) (100 // 50) 33.3 k VBB 15 RBB 2. Find IB and IE using loop equation around L. VBB I B RBB VBE I E RE IE Find the voltage at all nodes and currents through all the branches. (β = 100) IB IE 1 VBB VBE 1.29 0.0128 mA 1.29 mA I B 101 RE [ RBB ( 1)] IC I E 1.28 mA VB VBE I E RE VC 15 IC RC 15 1.28 5 8.6 V 0.7 1.29 3 4.57 V Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 17 (b) Equivalent circuit of the amplifier for small-signal analysis. Figure 4.43 (a) Common-source amplifier based on the circuit of Fig. 4.42. Figure 5.60 (a) A common-emitter amplifier using the structure of Fig. 5.59. (b) Equivalent circuit obtained by replacing the transistor with its hybrid-p model. Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 18