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FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features Description • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 31 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies D GD S G TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) ±20 V A 68 (Note 1) 384 A (Note 2) 269 mJ 6.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V 96 - Continuous (TC = 100oC) - Pulsed FDP085N10A_F102 100 - Derate Above 25oC 188 W 1.25 W/oC -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter FDP085N10A_F102 RθJC Thermal Resistance, Junction to Case, Max. 0.8 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 1 Unit o C/W www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET November 2013 Part Number FDP085N10A_F102 Top Mark FDP085N10A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.07 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V,TC = 25oC o ID = 250 μA, Referenced to 25 C VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 2.0 - 4.0 V - 7.35 8.5 mΩ - 72 - S - 2025 2695 pF - 468 620 pF - 20 - pF - 752 - pF - 31 40 nC - 9.7 - nC - 5.0 - nC - 7.5 - nC - 0.97 - Ω - 18 46 ns - 22 54 ns - 29 68 ns - 8 26 ns μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 96 A VDS = 10 V, ID = 96 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Releted Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshoid to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) er VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 0 V VGS = 10 V, VDS = 50 V, ID = 96 A (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50 V, ID = 96 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 96 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 384 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 96 A - - 1.3 V trr Reverse Recovery Time - 59 - ns Qrr Reverse Recovery Charge VDD = 50 V,VGS = 0 V, ISD = 96 A, dIF/dt = 100 A/μs - 80 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 96 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 2 www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information FDP085N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 100 ID, Drain Current[A] ID, Drain Current[A] 500 o 175 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test 10 *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2. TC = 25 C 5 0.1 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 18 2 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 o *Note: TC = 25 C IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 16 VGS = 10V 12 8 VGS = 20V 4 0 100 200 300 ID, Drain Current [A] o 175 C 100 400 2. 250μs Pulse Test 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] *Notes: 1. VGS = 0V Figure 6. Gate Charge Characteristics 10000 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 10 1 0.3 Figure 5. Capacitance Characteristics 100 o 25 C 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 6 4 2 0 100 3 VDS = 20V VDS = 50V VDS = 80V 8 *Note: ID = 96A 0 7 14 21 28 Qg, Total Gate Charge [nC] 35 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 0.92 -80 *Notes: 1. VGS = 0V 2. ID = 250μA -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 96A 0.5 -80 200 Figure 9. Maximum Safe Operating Area ID, Drain Current [A] 100μs 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 1. TC = 25 C 1ms 10ms DC VGS= 10V 60 40 20 o o 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] RθJC = 0.8 C/W 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage 30 IAS, AVALANCHE CURRENT (A) EOSS, [μJ] 2.0 1.5 1.0 0.5 20 40 60 80 V DS , Drain to Source Voltage [V ] ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 2.5 0 200 80 100 0.0 0 40 80 120 160 o TJ, Junction Temperature [ C] 100 10μs 0.1 -40 Figure 10. Maximum Drain Current vs. Case Temperature 1000 ID, Drain Current [A] 2.0 If R = 0 t AV = (L)(IAS)/(1.3*RATED BV DSS-V DD ) If R = 0 t AV = (L/R)In[(IAS*R)/(1.3*RATED BV DSS-V DD )+1] 10 o STARTING T J = 25 C o STARTING T J = 150 C 1 0.01 100 4 0.1 1 10 100 300 tAV , TIME IN AVALANCHE (ms) www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP085N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve o ZθJC (t), Thermal Response Thermal Response [ZθJC[ ]C/W] 1 0.5 PDM 0.2 0.1 t1 0.1 o 1. ZθJC(t) = 0.8 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 0.01 Single pulse 0.005 -5 10 ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 t2 *Notes: 0.05 -4 10 -3 -2 10 10 t1, Rectangular PulseDuration Duration [sec] [sec] Rectangular Pulse 5 -1 10 1 www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 6 www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 7 www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3 ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FDP085N10A Rev. C1 9 www.fairchildsemi.com FDP085N10A — N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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