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CONTENTS
Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . x i i i
Preface.....................................................................................xv
Program Committee and Short Course Instructors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xvii
Sponsors and Exhibitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xviii
INTEGRATED CIRCUIT HISTORY
From the Lab to the Fab: Transistors to Integrated C i r c u i t s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
H. R. Huff
Diffused Silicon Transistors and Switches (1954-55): The Beginning of Integrated
Circuit T e c h n o l o g y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
N. Holonyak, Jr.
CHALLENGES AND OVERVIEWS
Semiconductor Technology and Manufacturing Status, Challenges, and Solutions-A New
Paradigm in the M a k i n g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
C. R. Helms
CMOS Devices and Beyond: A Process Integration P e r s p e c t i v e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
J. A. Hutchby, V. Zhirnov, R. Cavin, and G. Bourianoff
Metrology Requirements and the Limits of Measurement Technology for the
Semiconductor Industry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
A. C. Diebold
Development of Metrology at NIST for the Semiconductor Industry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
S. Knight
FRONT END
Materials / Gate Dielectrics / Processing
The "Ultimate" CMOS Device: A 2003 Perspective (Implications for Front-End
Characterization and M e t r o l o g y ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
H. R. Huff and P. M. Zeitzoff
Optical Metrology for Ultrathin Oxide and High-ic Gate D i e l e c t r i c s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
W. W. Chism, A. C. Diebold, and J. Price
Critical Metrology for Ultrathin High-ic D i e l e c t r i c s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
W. Vandervorst, B. Brijs, H. Bender, T. Conard, J. Petry, O. Richard, X. Blasco, and M. Nafria
Advanced Characterization of High-ic Materials Interfaces by
High-Resolution Photoemission Using Synchrotron Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
O. Renault, N. T. Barrett, D. Samour, J.-F. Damlencourt, D. Blin, and S. Quiais-Marthon
Preparation and Characterizations of High-ic Gate Dielectric CaZrO3 Thin Films by
Sol-Gel T e c h n o l o g y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
T. Yu, W. Zhu, C. Chen, X. Chen, and R. G. Krishnan
High-ic Dielectric Characterization by VUV Spectroscopic Ellipsometry and X-Ray R e f l e c t i o n . . . . . . . . . 148
P. Boher, P. Evrard, J. P. Piel, C. Defranoux, J. C. Fouere, E. Bellandi, and H. Bender
Non-destructive Characterization and Metrology for Ultrathin
High-ic Dielectric L a y e r s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
R. Champaneria, P. Mack, R. White, and J. Wolstenholme
Non-contact C-V Technique for High-ic A p p l i c a t i o n s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
P. Edelman, A. Savtchouk, M. Wilson, J. D'Amico, J. N. Kochey, D. Marinskiy, and J. Lagowski
A New Characterization Technique for Depth-Dependent Dielectric Properties of High-ic Films
by Open-Circuit Potential Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
K. Kita, M. Sasagawa, K. Kyuno, and A. Toriumi
Optical Properties of Silicon Oxynitride Thin Films Determined by Vacuum Ultraviolet
Spectroscopic E l l i p s o m e t r y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
H. J. Kirn, Y. J. Cho, H. M. Cho, S. Y. Kirn, C. Moon, G. Cho, and Y. Kwon
Characterization of Hafnium Oxide Thin Films Prepared by MOCVD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
S. F. Choy, V. S. W. Lim, R. Gopalakrishan, A. Trigg, L. K. Bera, S. Matthew, N. Balasubramanian,
M.-S. Joo, B.-J. Cho, and C. C. Yeo
Optical Properties of Jet-Vapor-Deposited TiAlO and HfA1O Determined by Vacuum
Ultraviolet Spectroscopic E l l i p s o m e t r y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
N. V. Nguyen, J.-R Han, J. Y. Kirn, E. Wilcox, Y. J. Cho, W. Zhu, Z. Luo, and T. P. Ma
High-ic Dielectric Stack-Ellipsometry and Electron Diffraction Measurements of
Interfacial O x i d e s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
K. Choi, H. R. Harris, S. Nikishin, S. Gangopadhyay, and H. Temkin
Submillimeter-Wavelength Plasma Diagnostics for
Semiconductor M a n u f a c t u r i n g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
E. C. Benck, G. Y. Golubiatnikov, G. T. Eraser, D. Pluesquelic, R. Lavrich, B. Ji, S. A. Motika, and
E. J. Karwacki
Monitoring Sheath Voltages and Ion Energies in High-Density Plasmas
Using Noninvasive Radio-Frequency Current and Voltage Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
M. A. Sobolewski
Effects of Lightpipe Proximity on Si Wafer Temperature in Rapid Thermal Processing T o o l s . . . . . . . . . . 200
K. G. Kreider, D. H. Chen, D. P. DeWitt, W. A. Kimes, and B. K. Tsai
Analytical Methodologies for Semiconductor Process Characterization—
Novel Mass Spectrometric Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
V. H. Vartanian and B. Goolsby
SiGe / Strained Si
Characterization of Si/SiGe Heterostructures for Strained Si CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
P. M. Mooney, S. J. Koester, H. J. Hovel, J. O. Chu, K. K. Chan, J. L. Jordan-Sweet, J. A. Ott,
N. Klymco, and D. M. Mocuta
Characterization Techniques for Evaluating Strained Si
CMOS Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Q. Xie, R. Liu, X.-D. Wang, M. Canonico, E. Duda, S. Lu, C. Cook, A. A. Volinsky, S. Zollner,
S. G. Thomas, T. White, A. Barr, M. Sadaka, and B.-Y. Nguyen
Root-Cause Analysis and Statistical Process Control of Epilayers for SiGe:C Hetero-Structure
Bipolar T r a n s i s t o r s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
Q. Xie, E. Duda, M. Kottke, W. Qin, X.-D. Wang, S. Lu, M. Erickson, H. Kretzschmar, L. Cross, and
S. Murphy
Graded Sii_x Ge^ Metrology Using a Multi-technology Optical System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233
H. Pois, J. Huang, S. Morris, K. Peterlinz, S. Zangooie, J. P. Liu, B. L. Tan, D. K. Sohn, R. Jones, and
C. Scheirer
Characterization of SiGe Bulk Compositional Standards with Electron Probe Microanalysis . . . . . . . . . . 238
R. B. Marinenko, J. T. Armstrong, S. Turner, E. B. Steel, and F. A. Stevie
Defects / Contamination / Particles
Characterization of Organic Contaminants Outgassed from Materials Used in Semiconductor
Fabs/Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245
P. Sun, C. Ayre, and M. Wallace
Direct to Digital Holography for High Aspect Ratio Inspection of Semiconductor Wafers . . . . . . . . . . . . . 254
C. E. Thomas Jr., M. A. Hunt, T. M. Bahm, L. R. Baylor, P. R. Bingham, M. D. Chidley, X. Dai,
R. J. Delahanty, A. El-Khashab, J. M. Gilbert, J. S. Goddard, G. R. Hanson, J. D. Hickson, K. W. Hylton,
G. C. John, M. L. Jones, M. W. Mayo, C. Marek, J. H. Price, D. A. Rasmussen, L. J. Schaefer,
M. A. Schulze, B. Shen, R. G. Smith, A. N. Su, K. W. Tobin, W. R. Usry, E. Voelkl, K. S. Weber, and
R. W. Owen
vi
Challenges of Finer Particle Detection on Unpatterned Silicon W a f e r s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 271
T. Hattori, A. Okamoto, and H. Kuniyasu
Characterization of Missing-Poly Defects in Ion Implantation in
ULSI M a n u f a c t u r i n g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
B. Dunham, R. Anundson, and Z. Y. Zhao
Full-Wafer Defect Identification Using X-Ray T o p o g r a p h y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 284
D. K. Bowen, M. Wormington, P. Feichtinger, and D. E. Joyce
Contamination-Free Manufacturing: Tool Component Qualification, Verification, and
Correlation with Wafers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
S. H. Tan, N. Chen, S. Liu, and K. Wang
TOFSIMS Characterization of Molecular Contamination Induced Resist S c u m m i n g . . . . . . . . . . . . . . . . . . 294
J. J. Lee, T. Guenther, R. Brownson, and S. Frezon
Controlling Wafer Contamination Using Automated On-Line Metrology during
Wet Chemical C l e a n i n g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
J. Wang, S. Kingston, Y. Han, H. Saini, R. McDonald, and R. Mui
Should We Analyze for Trace Metal Contamination at the Edge, Bevel, and Edge Exclusion
of W a f e r s ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 0 9
M. Beebe, C. Sparks, and R. Carpio
NIST Calibration Facility for Sizing Spheres Suspended in L i q u i d s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313
M. K. Donnelly, G. W. Mulholland, and M. R. Winchester
Thin Film
Measurement of Gate-Oxide Film Thicknesses by X-Ray Photoelectron S p e c t r o s c o p y . . . . . . . . . . . . . . . . . 321
C. J. Powell and A. Jablonski
Assessment of Ultrathin SiO2 Film Thickness Measurement Precision by E l l i p s o m e t r y . . . . . . . . . . . . . . . . 326
D. Chandler-Horowitz, N. V. Nguyen, and J. R. Ehrstein
Thickness Evaluation for 2nm SiO2 Films, a Comparison of
Ellipsometric, Capacitance-Voltage, and HRTEM Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 331
J. Ehrstein, C. Richter, D. Chandler-Horowitz, E. Vogel, D. Ricks, C. Young, S. Spencer, S. Shah,
D. Maher, B. Foran, A. Diebold, and P. Y. Hung
Uncertainties Caused by Surface Adsorbates in Estimates of the Thickness of
SiO2 Ultrathin Films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 337
Y. Azuma, R. Tan, T. Fujimoto, I. Kojima, A. Shinozaki, and M. Morita
Quantification of Local Elastic Properties Using Ultrasonic
Force M i c r o s c o p y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 343
M. Kraatz, H. Geisler, and E. Zschech
Determination of Factors Affecting HRTEM Gate Dielectric Thickness
Measurement U n c e r t a i n t y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 348
J. H. J. Scott
Microtensile Testing of Thin Films in the Optical and Scanning Electron M i c r o s c o p e s . . . . . . . . . . . . . . . . 353
D. T. Read, J. D. McColskey, R. Geiss, and Y.-W. Cheng
Non-destructive Surface Profile Measurement of a Thin Film Deposited on a
Patterned S a m p l e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 7
D. Kirn, W. Chegal, S. Kirn, H. J. Kong, and Y. Lee
LITHOGRAPHY
Overview of Lithography: Challenges and M e t r o l o g i e s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 365
H. J. Levinson
EUV Mask Blank Fabrication and M e t r o l o g y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 371
P. Seidel
Review of CD Measurement and Scatterometry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381
P. Thony, D. Herisson, D. Henry, E. Severgnini, and M. Vasconi
Advanced Mask Inspection and Metrology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389
N. Yoshioka and T. Terasawa
vii
Application of High-Pressure/Environmental Scanning Electron Microscopy to Photomask
Dimensional M e t r o l o g y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 396
M. T. Postek and A. E. Vladar
A Model for Step Height, Edge Slope, and Linewidth Measurements Using AFM . . . . . . . . . . . . . . . . . . . . 400
X. Zhao, T. V. Vorburger, J. Fu, J. Song, and C. V. Nguyen
A Primary Standard for 157 nm Excimer Laser Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 409
C. L. Cromer, M. L. Dowell, R. D. Jones, D. A. Keenan, and S. Yang
The Transition to Optical Wafer Flatness Metrology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
J. F. Valley and N. Poduje
Critical Dimension Calibration Standards for ULSI M e t r o l o g y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 421
R. A. Alien, M. W. Cresswell, C. E. Murabito, R. G. Dixson, and E. H. Bogardus
Form of Deprotection in Chemically Amplified Resists . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 429
R. L. Jones, T. Hu, V. M. Prabhu, C. L. Soles, E. K. Lin, W.-l. Wu, D. L. Goldfarb, and M. Angelopoulos
3-Dimensional Lineshape Metrology Using Small Angle
X-Ray Scattering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 434
R. L. Jones, T. Hu, E. K. Lin, W.-l. Wu, D. M. Casa, and G. G. Barclay
NEXAFS Measurements of the Surface Chemistry of Chemically Amplified P h o t o r e s i s t s . . . . . . . . . . . . . . 439
E. L. Jablonski, J. L. Lenhart, S. Sambasivan, D. A. Fischer, R. L. Jones, E. K. Lin, W.-L Wu,
D. L. Goldfarb, K. Temple, M. Angelopoulos, and H. Ito
Facility for Pulsed Extreme Ultraviolet Detector C a l i b r a t i o n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 444
S. Grantham, R. Vest, C. Tarrio, and T. B. Lucatorto
Combinatorial Methods Study of Confinement Effects on the Reaction Front in Ultrathin
Chemically Amplified P h o t o r e s i s t s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 448
M. X. Wang, E. K. Lin, A. Karim, and M. J. Fasolka
INTERCONNECT AND BACK END
Cu and Materials Processing
Correlation of Surface and Film Chemistry with Mechanical Properties in Interconnects . . . . . . . . . . . . . 455
Y. Zhou, G. Xu, T. Scherban, J. Leu, G. Kloster, and C.-I. Wu
Nanoscale Thermal and Thermoelectric Mapping of Semiconductor Devices and Interconnects . . . . . . . . 462
L. Shi, H. K. Lyeo, C. K. Shih, P. Kim, A. Bachtold, S. Plyosunov, P. L. McEuen, and A. Majumdar
Potential and Limits of Texture Measurement Techniques for Inlaid Copper
Process O p t i m i z a t i o n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 469
H. Geisler, I. Zienert, H. Prinz, M.-A. Meyer, and E. Zschech
In Situ X-Ray Microscopy Studies of Electromigration in Copper Interconnects . . . . . . . . . . . . . . . . . . . . . 480
G. Schneider, A. M. Meyer, E. Zschech, G. Denbeaux, U. Neuhausler, and P. Guttmann
Room Temperature Electroplated Copper Recrystallization: In Situ Mapping on 200/300 mm
Patterned W a f e r s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485
K. J. Kozaczek, R. I. Martin, L-Y. Huang, D. S. Kurtz, and P. R. Moran
Metrology Tool for Microstructure Control on 300 mm Wafers during Damascene
Copper P r o c e s s i n g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 490
K. J. Kozaczek, D. S. Kurtz, P. R. Moran, R. I. Martin, L-Y. Huang, and A. Stratilatov
Texture and Stress Analysis in As-Deposited and Annealed Damascene Cu Interconnects Using
XRD and OIM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 494
K. Mirpuri, J. Szpunar, and K. Kozaczek
Microstructure Analysis in As-Deposited and Annealed Damascene Cu Interconnects
Using OIM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 499
K. Mirpuri, J. Szpunar, and K. Kozaczek
Controlling Copper Electrochemical Deposition ( E C D ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 504
M. West, R. McDonald, M. Anderson, S. Kingston, and R. Mui
Analysis and Control of Copper Plating Bath Additives and By-Products . . . . . . . . . . . . . . . . . . . . . . . . . . . 514
B. Newton and E. Kaiser
Characterization of Barrier Layer Phase and Morphology as a Function of Differing Dielectric
Substrate Conditions by AFM and Grazing Angle XRD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 519
C. C. Wang, G. Lai, C. R. Brundle, and Y. Uritsky
viii
Nanoindentation Study of the Mechanical Behavior of Silicon Nano-Springs . . . . . . . . . . . . . . . . . . . . . . . . 525
B. Li, Z. Luo, P. S. Ho, and T.-M. Lu
Low-ic
Impact of Low-ic Dielectrics on Electromigration Reliability for Cu Interconnects . . . . . . . . . . . . . . . . . . . 533
P. S. Ho, K.-D. Lee, E. T. Ogawa, S. Yoon, and X. Lu
New Infrared Spectroscopic Ellipsometer for Low-ic Dielectric Characterization . . . . . . . . . . . . . . . . . . . . . 540
P. Boher, M. Bucchia, C. Guillotin, C. Defranoux, and J. C. Fouere
Pore Size Distribution Measurement of Porous Low-ic Dielectrics Using TR-SAXS . . . . . . . . . . . . . . . . . . . 546
S. Terada, T. Kinashi, and J. Spear
Material Characterization and the Formation of Nanoporous PMSSQ Low-ic Dielectrics.............. 551
P. Lazzeri, L. Vanzetti, E. lacob, M. Bersani, M. Anderle, J. J. Park, Z. Lin, R. M. Briber, G. W. Rubloff,
and R. D. Miller
Determination of Pore-Size Distributions in Low-ic Dielectric Films by Transmission
Electron Microscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556
B. J. Foran, B. Kastenmeier, and D. S. Bright
Porosity Characterization of Porous SiLK™ Low-ic Dielectric F i l m s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 562
C. E. Mohler, B. G. Landes, G. F. Meyers, B. J. Kern, K. B. Ouellette, and S. Magonov
Measurement of Pore Size and Matrix Characteristics in Low-ic Dielectrics by Neutron
Contrast V a r i a t i o n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 567
R. C. Hedden, H.-J. Lee, B. J. Bauer, C. L. Soles, W.-l. Wu, and E. K. Lin
The Structural Evolution of Pore Formation in Low-ic Dielectric
Thin F i l m s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 572
M. S. Silverstein, B. J. Bauer, H.-J. Lee, R. C. Hedden, B. Landes, J. Lyons, B. Kern, J. Niu, and
T. Kalantar
X-Ray Porosimetry as a Metrology to Characterize the Pore Structure of Low-ic
Dielectric F i l m s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 576
C. L. Soles, H.-J. Lee, R. C. Hedden, D.-W. Liu, B. J. Bauer, and W.-l. Wu
CRITICAL ANALYTICAL TECHNIQUES
In Situ and In-Line Metrology
In Situ Metrology: The Path to Real-Time Advanced Process C o n t r o l . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583
G. W Rubloff
Automated, On-Line, Trace Contamination and Chemical Species Analysis for the
Semiconductor Industry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 592
S. Kingston, R. McDonald, Y. Han, J. Wang, J. Wang, M. West, L. Stewart, B. Ormond, and R. Mui
On-Line Analysis of Process Chemicals by Inductively Coupled Plasma Mass Spectrometry
( I C P - M S ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 606
Y. Kishi, K. Kawabata, D. Palsulich, and D. Wiederin
Novel Applications of Gas-Phase Analytical Methods to Semiconductor Process E m i s s i o n s . . . . . . . . . . . . . 611
B. Goolsby and V. H. Vartanian
Physical Characterization / X-Rays
Overview of CD-SEM-And Beyond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 619
D. C. Joy
Transmission Electron Microscopy: Overview and C h a l l e n g e s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 627
S. J. Pennycook, A. R. Lupini, A. Borisevich, M. Varela, Y. Peng, P. D. Nellist, G. Duscher, R. Buczko,
and S. T. Pantelides
High-Resolution X-Ray Scattering Methods for ULSI Materials C h a r a c t e r i z a t i o n . . . . . . . . . . . . . . . . . . . . 634
R. J. Matyi
ix
Advances in X-Ray Reflectivity (XRR) and X-Ray Fluorescence (XRF) Measurements Provide
Unique Advantages for Semiconductor Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 646
J. Spear, H. Murakami, and S. Terada
Characterization of Porous, Low-ic Dielectric Thin-Films Using X-Ray R e f l e c t i v i t y . . . . . . . . . . . . . . . . . . . 651
M. Wormington and C. Russell
Ultra-shallow Junction Metrology Using the Therma-Probe Tool . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 656
M. Bakshi, L. Nicolaides, S. Cherekdjian, and R. Tichy
Practical Fab Applications of X-Ray Metrology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660
D. Agnihotri, J. Formica, J. Gallegos, and J. O'Dell
Scanning Probes
Study of Oxide Quality for Scanning Capacitance Microscope Measurements . . . . . . . . . . . . . . . . . . . . . . . 667
V. S. W. Lim, Y. Jiang, and A. Trigg
Application of SCM to Process Development of Novel Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 672
N. Duhayon, W. Vandervorst, and L. Hellemans
Assessing the Resolution Limits of Scanning Spreading Resistance Microscopy and Scanning
Capacitance M i c r o s c o p y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 678
P. Eyben, N. Duhayon, D. Alvarez, and W. Vandervorst
Recent Progress and Insights in Two-Dimensional Carrier Profiling Using Scanning Spreading
Resistance M i c r o s c o p y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 685
P. Eyben, D. Alvarez, T. Clarysse, S. Denis, and W. Vandervorst
SIMS and Shallow Junction Analysis
Ultra-shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques . . . . . . . . . . . . . . . . . . . . . 695
M. Anderle, M. Barozzi, M. Bersani, D. Giubertoni, and P. Lazzeri
In Situ Sputtering Rate Measurement by Laser Interferometer Applied to SIMS Analyses . . . . . . . . . . . . 705
M. Bersani, D. Giubertoni, M. Barozzi, S. Bertoldi, L. Vanzetti, E. lacob, and M. Anderle
Bevel Depth Profiling SIMS for Analysis of Layer Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710
G. Gillen, S. Wight, P. Chi, A. Fahey, J. Verkouteren, E. Windsor, and D. B. Fenner
Using Direct Solid Sampling ICP-MS to Complement SEM-EDX and SIMS in Characterizing
Semiconductor Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 715
F. Li and S. Anderson
Optical Characterization
Status and Prospects for VUV Ellipsometry (Applied to High-ic and Low-ic Materials) . . . . . . . . . . . . . . . 723
N. V Edwards
Applications of UV-Raman Spectroscopy to Microelectronic Materials and Devices . . . . . . . . . . . . . . . . . . 738
R. Liu and M. Canonico
Characterization of Ion-Implantation in Silicon by Using Laser Infrared Photo-Thermal
Radiometry ( P T R ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 744
J. A. Garcia, X. Guo, A. Mandelis, A. Simmons, and B. Li
In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes . . . . . . . . . . . . . . . 748
J. E. Maslar and W S. Hurst
One-Dimensional Spectroscopic Measurement of Patterned Structures Using a Custom-Built
Spectral Imaging E l l i p s o m e t e r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 753
W Chegal, D. Kirn, S. Kirn, Y. J. Cho, H. M. Cho, and Y. W Lee
Carrier Illumination as a Tool to Probe Implant Dose and
Electrical A c t i v a t i o n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 758
W Vandervorst, T. Clarysse, B. Brijs, R. Loo, Y. Peytier, B. J. Pawlak, E. Budiarto, and P. Borden
Fiber Optic Fourier Transform Infrared Spectroscopic Techniques for Advanced On-Line
Chemical Analysis in Semiconductor Fabrication T o o l s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 764
M. Kester, M. Trygstad, and P. Chabot
Electrical Characterization
Challenges of Electrical Measurements of Advanced Gate Dielectrics in
Metal-Oxide-Semiconductor D e v i c e s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 771
E. M. Vogel and G. A. Brown
Status of Non-contact Electrical Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 782
V. V. Komin, A. F. Bello, C. R. Brundle, and Y. S. Uritsky
In-Line, Non-destructive Electrical Metrology of Nitrided Silicon Dioxide and High-ic Gate
Dielectric Layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 796
R. J. Hillard, P. Y. Hung, W. Chism, C. Win Ye, W. H. Rowland, L. C. Tan, and C. E. Kalnas
Non-contact Electrical Doping P r o f i l i n g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 802
D. Marinskiy, J. Lagowski, J. D'Amico, A. Findlay, and L. Jastrzebski
Author Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 807
Key Words I n d e x . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 813
XI