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MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch−mode applications. Features • • • • • • • • • • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn−Off Times Operating Temperature Range −65 to + 150_C 100_C Performance Specified for: ♦ Reversed Biased SOA with Inductive Loads ♦ Switching Times with Inductive Loads ♦ Saturation Voltages ♦ Leakage Currents Complementary to the MJE13007 Series These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com 8 AMPERE PCP SILICON POWER TRANSISTORS 300−350−400 VOLTS 80 WATTS COLLECTOR 2, 4 1 BASE 3 EMITTER 4 MAXIMUM RATINGS Rating Symbol Value Collector−Emitter Voltage MJE5850 MJE5851 MJE5852 VCEO(sus) Collector−Emitter Voltage MJE5850 MJE5851 MJE5852 VCEV Emitter Base Voltage VEB 6.0 Vdc IC 8.0 Adc ICM 16 Adc IB 4.0 Adc Base Current − Peak (Note 1) IBM 8.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 80 0.640 W W/_C – 65 to 150 _C Collector Current − Continuous (Note 1) Collector Current − Peak (Note 1) Base Current − Continuous (Note 1) Operating and Storage Junction Temperature Range Vdc 300 350 400 1 Vdc 350 400 450 TJ, Tstg *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. January, 2015 − Rev. 7 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. © Semiconductor Components Industries, LLC, 2015 TO−220 CASE 221A−09 STYLE 1 Unit 1 MJE585xG AY WW MJE585x = G A Y WW = = = = Device Code x = 0, 1, or 2 Pb−Free Package Assembly Location Year Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Publication Order Number: MJE5850/D MJE5850, MJE5851, MJE5852 THERMAL CHARACTERISTICS Rating Symbol Max Unit RqJC 1.25 _C/W TL 275 _C Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 10 mA, IB = 0) MJE5850 MJE5851 MJE5852 Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 W, TC = 100_C) ICER Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO Vdc 300 350 400 − − − − − − − − − − 0.5 2.5 − − 3.0 − − 1.0 mAdc mAdc mAdc SECOND BREAKDOWN IS/b See Figure 12 RBSOA See Figure 13 Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) − 15 5 − − − − − − − − − − 2.0 5.0 2.5 − − − − 1.5 1.5 − 270 − Vdc Vdc DYNAMIC CHARACTERISTICS Cob Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) pF SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 ms, Duty Cycle ≤ 2%) td − 0.025 0.1 ms tr − 0.100 0.5 ms (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle ≤ 2%) ts − 0.60 2.0 ms tf − 0.11 0.5 ms (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) tsv − 0.8 3.0 ms tc − 0.4 1.5 ms tfi − 0.1 − ms (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) tsv − 0.5 − ms tc − 0.125 − ms tfi − 0.1 − ms Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: PW = 300 ms. Duty Cycle ≤ 2% www.onsemi.com 2 MJE5850, MJE5851, MJE5852 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 200 TJ = 150°C hFE , DC CURRENT GAIN 100 70 50 TJ = 25°C 30 20 VCE = 5 V 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (AMPS) 5.0 7.0 10 2.0 1.6 IC = 0.25 A 1.2 TJ = 25°C 0.4 0 0.01 0.02 1.6 1.6 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 IC/IB = 4 1.2 TJ = 150°C TJ = 25°C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.8 10 TJ = 25°C TJ = 150°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage 10 3000 2000 TJ = 25°C 104 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (nA) 5.0 1.2 0 0.1 10 105 TJ = 150°C 103 100°C 102 101 REVERSE FORWARD VCE = 200 V +0.2 +0.1 1000 Cib 500 Cob 200 100 50 25°C 100 2.0 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMPS) IC/IB = 4 0.4 0.4 0.2 0.3 0.05 Figure 2. Collector Saturation Region 2.0 0 0.1 5.0 A 0.8 Figure 1. DC Current Gain 0.8 2.5 A 1.0 A -0.4 0 -0.1 -0.2 -0.3 VBE, BASE-EMITTER VOLTAGE (VOLTS) 30 0.1 0.2 -0.5 0.5 1.0 5.0 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 5. Collector Cutoff Region www.onsemi.com 3 MJE5850, MJE5851, MJE5852 Table 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +V 50 mF + 0.0025 mF -10 V 0.2 mF 1 INPUT CONDITIONS 20 0.1 mF INPUT +V 0 PW Varied to Attain IC = 100 mA 1W2 MJE15028W 0.1 mF 500 W 1/2 W CIRCUIT VALUES Lcoil = 180 mH Rcoil = 0.05 W VCC = 20 V TEST CIRCUITS IN PUT SEE ABOVE FOR DETAILED CONDITIONS 1N4937 OR EQUIVALENT Vclamp 2 TURN−OFF TIME Use inductive switching driver as the input to the resistive test circuit. + -V VCC = 250 V RL = 62 W Pulse Width = 10 ms Vclamp = 250 V RB adjusted to attain desired IB1 OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC IC TUT IB1 adjusted to obtain the forced hFE desired 50 mF −V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off) 1 IB1 1 - INDUCTIVE TEST CIRCUIT 2 1N4934 0.2 mF Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7 W 1 0.0033 mF 500 W 1/2 W 50 W 2W TURN−ON TIME 1/2 W 500 W 1/2 W 0 2 0.1 mF MJE15029 500 W Rcoil ICM tf Clamped t Lcoil t1 ≈ tf t1 t2 ≈ VCC VCE VCEM RS = 0.1 W Vclamp t TIM E t2 Lcoil (ICM) TUT VCC RL 1 Lcoil (ICM) 2 VCC VClamp Test Equipment Scope — Tektronix 475 or Equivalent 1.0 3.0 IC = 4 A IC/IB = 4 TJ = 25°C 10% 2% ICM ICM tc tfi VCE tsr trv tti IC 90% ICM ICM VCEM t c , CROSSOVER TIME (μs) IB 10% 90% IB1 VCEM 0.8 2.7 2.4 2.1 tsv 100°C 0.6 1.8 tsv 25°C 1.5 0.4 1.2 0.9 0.2 0.6 tc 25°C Vclamp 0.3 0 TIME 0 1 2 3 4 5 6 7 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 7. Inductive Switching Measurements Figure 8. Inductive Switching Times www.onsemi.com 4 8 0 t sv, VOLTAGE STORAGE TIME (μs) tc 100°C MJE5850, MJE5851, MJE5852 SWITCHING TIMES NOTE For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN−222A: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 −90% VCEM tfi = Current Fall Time, 90 −10% ICM tti = Current Tail, 10 −2% ICM tc = Crossover Time,10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. 1.0 0.7 0.5 10 VCC = 250 V IC/IB = 4 TJ = 25°C 0.3 0.7 ts t, TIME (s) μ t, TIME (s) μ 0.2 tr 0.1 0.07 0.05 0.4 VCC = 250 V IC/IB = 4 VBE(off) = 5 V TJ = 25°C 0.3 0.2 0.03 td 0.02 tf r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.1 1 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.3 0.5 0.7 1.0 2.0 4.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Turn−On Switching Times Figure 10. Turn−Off Switching Time D = 0.5 0.3 0.2 0.2 0.1 ZqJC(t) = r(t) RqJC RqJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 Figure 11. Typical Thermal Response [ZqJC(t)] www.onsemi.com 5 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k MJE5850, MJE5851, MJE5852 The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. Safe Operating Area Information Forward Bias IC, COLLECTOR CURRENT (AMPS) 20 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 10 5.0 5 ms 2.0 TC = 25°C 1.0 1 ms dc 0.5 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMITMJE5850 MJE5851 MJE5852 200 300 400 500 7.0 10 20 40 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.2 0.1 0.05 0.02 Figure 12. Maximum Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 8.0 Reverse Bias For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current condition allowable during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics. 7.0 IC/IB = 4 VBE(off) = 2 V to 8 V TJ = 100°C 6.0 5.0 4.0 MJE5850 MJE5851 MJE5852 3.0 2.0 1.0 0 200 100 300 400 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. RBSOA, Maximum Reverse Bias Safe Operating Area 3.5 1 IB2(pk) (AMPS) POWER DERATING FACTOR IC = 4 A IB1 = 1 A TJ = 25°C 3.0 2.5 2.0 1.5 1.0 0 2 4 6 0.6 THERMAL DERATING 0.4 0.2 0 8 SECOND BREAKDOWN DERATING 0.8 20 40 60 80 100 120 140 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 14. Peak Reverse Base Current Figure 15. Forward Bias Power Derating www.onsemi.com 6 160 MJE5850, MJE5851, MJE5852 ORDERING INFORMATION Package Shipping MJE5850G Device TO−220 (Pb−Free) 50 Units / Rail MJE5851G TO−220 (Pb−Free) 50 Units / Rail MJE5852G TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 7 MJE5850, MJE5851, MJE5852 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE5850/D