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Transcript
ECE 486/586
Computer Architecture
Lecture # 2
Spring 2015
Portland State University
Recap of Last Lecture
• “Old” view of computer architecture:
– Instruction Set Architecture (ISA) design
• “Real” computer architecture:
– Design to maximize performance within constraints: cost,
power, and availability
– Includes ISA, microarchitecture, hardware
• Tasks of a computer architect:
– Determine features needed by a market and incorporate those
features in the computer
– Identify important technology scaling trends and adapt
computer design accordingly
Lecture Topics
• Trends in Semiconductor Technology
– Logic, DRAM and Storage Technology
– Bandwidth and Latency scaling
– Transistors and Wires
• Trends in power and Energy
• Trends in Cost
– Impact of time, volume and commoditization
– Cost of an Integrated Circuit
• Reference: Chapter 1: Sections 1.4, 1.5 and 1.6 (Pages 17 – 32)
Technology Trends: Transistor Counts
• Transistor density increases by ~ 35% per year
• Die size increase less predictable, ranging from 10% to 20% per year
• Combined effect:
– On-chip transistor count increases by 40% to 55% per year (2x increase
every 18 to 24 months)
– Popularly known as Moore’s Law
• What can we do with all these extra transistors:
–
–
–
–
More complex processors (e.g., deeper pipelines, SIMD units)
More general-purpose cores on a chip
More special-purpose cores (e.g., graphics) on a chip
Larger on-chip caches
Technology Trends: DRAM
• In 1990s, DRAM capacity was increasing by 60% per year
(quadrupling every 3 years)
• More recently, DRAM capacity increase has slowed down to
25% -- 40% (doubling every 2 to 3 years)
• Capacity increases will continue to slow down due to charge
storage limits of the DRAM capacitors
– DRAM may stop scaling before the end of this decade
• Impact on Architecture:
– Need to explore other memory technologies to replace DRAM as
the main memory
Technology Trends: Storage
Flash Memory:
• Capacity increasing by 50 to 60% per year (doubling in < 2 years)
• 15-20X cheaper/bit than DRAM
• Increasing use as SSD in Laptops and as the only storage device in
tablets and smartphones
Magnetic Disk Technology:
•
•
•
•
Capacity increasing by 40% per year (doubling every 2 to 3 years)
15-25X cheaper/bit then Flash
300-500X cheaper/bit than DRAM
Most widely used in server and warehouse-scale storage
Why care about Technology Trends?
• Architect needs to be aware of technology trends to make
the correct design choices and trade-offs
• Product design begins 3 – 5 years before the product is
expected to hit the market
– Consistent technology trends help in knowing how a design would
behave in the future
Bandwidth vs. Latency
• Bandwidth or throughput
– Total work done in a given time
– 10,000-25,000X improvement for processors
– 300-1200X improvement for memory and disks
• Latency or response time
– Time between start and completion of an event
– 30-80X improvement for processors
– 6-8X improvement for memory and disks
Bandwidth vs. Latency
Bandwidth improvements significantly outpace latency improvements
Technology Trends: Transistors
• Scaling refers to reduction in integrated circuit feature size (in
x or y dimension)
– 1971: 10 micrometer
– 2011: 32 nanometers
• Transistor density (count per unit area) increases
quadratically with feature size reductions (e.g. 2x density
increase from 32 nm to 22 nm process technology)
• Transistor speed typically increases linearly with decreasing
feature size
– Complex for multiple reasons including decrease in supply voltage
Technology Trends: Wires
• Wire delays do not scale well with technology
– Delay proportional to Resistance * Capacitance
– Wire lengths decrease with feature size reductions
– But, resistance and capacitance per unit length increase
• Poor wire delay scaling compared to transistor scaling creates
design challenges
– Larger fractions of processor clock cycle consumed by signal
propagation delay on wires
Power & Energy: A Systems Perspective
• System Needs:
– Power needs to brought in and distributed around the chip
– Power dissipated as heat needs to be removed
• Considerations:
– Peak Power
• Power supply system needs to provision for peak power needs
• If a processor attempts to draw more current than the supply can
provide, there is a “voltage droop”, which leads to malfunction
– Thermal Design power (TDP)
• Characterizes sustained power consumption
• Determined by the capabilities of the cooling system
• Lower than peak power, higher than average power consumption
– Energy Efficiency
• Considers power and execution time (Energy = Power * Time)
Power vs. Energy
• Power poses operating constraints:
– can only execute fast enough to max out the power delivery or
the cooling solution
• Energy is the ultimate metric
– measures the “true” cost of performing a task
– has a direct impact on battery lives (portable devices) and
electricity bills (servers)
• Example: If processor A consumes 20% more power than
processor B but finishes the task in 30% less time, its relative
energy is 1.2 * 0.7 = 0.84. Processor A is better, provided its
higher power can be supported by the power delivery and
cooling systems
Dynamic Energy and Power
• Dynamic energy
– Transistor switches from 0 -> 1 or 1 -> 0
– ½ x Capacitive load x Voltage2
• Dynamic power
– ½ x Capacitive load x Voltage2 x Frequency switched
• Reducing clock rate reduces power, not energy
• Reducing voltage reduces both power and energy
– Voltages have dropped from 5V to < 1V in 20 years
Example
Question:
Consider a processor which can operate in two different modes: (i)
Mode-1: a high voltage mode (1V, 3GHz), and (ii) Mode-2: a low
voltage mode (0.75V, 2 GHz). How much savings in dynamic energy
and dynamic power will the processor achieve by operating in
Mode-2 as compared to Mode-1?
Answer:
(Energy)mode2/(ENERGY)mode1 = (0.75)2/(1)2 = 0.56
44% energy savings
(Power)mode2/(Power)mode1 = (0.75)2(2) / (1)2(3)= 0.375
62.5% power savings
Power Wall
• Until 2003, increases in
transistor count and
frequency dominated
reductions in voltage =>
net increase in power
• Intel 80386 consumed ~ 2
W
• 3.3 GHz Intel Core i7
consumes 130 W
• Heat must be dissipated
from 1.5 x 1.5 cm chip
• This is the limit of what
can be cooled by air
• Result: Clock speeds
became stagnant from
2003 onwards
Techniques to Reduce Power
• Do nothing well:
– Turn off the clock of inactive modules, e.g., idle FP units or cores
• Dynamic Voltage-Frequency Scaling:
– Multiple operating modes with different voltages and frequencies
– In periods of low activity, switch to lower voltage (frequency)
• Low power memory states
– DRAMs have a series of increasingly lower power modes
– Switching from a low power mode to active mode consumes
extra latency
• Overclocking
– Turbo mode in Intel processors
Static Power
• Power consumed when the system is idle
– Currentstatic x Voltage
– Proportional to the number of transistors
– Increasing rapidly with larger on-chip SRAM caches
• To cut down static power:
– Need to turn off the power supply to inactive modules
(power gating)
Cost and Price Trends
• Impacted by time, volume, and commodification
– Cost decreases with time due to:
• Learning curve resulting in improved yields
• Recognized opportunities for cost reductions
– Cost decreases with volume due to:
• Learning curve reached much faster
• Purchasing and manufacturing efficiency
• Reduction in amortized per unit cost of R&D
– Cost decreases with commodification due to:
• Multiple vendors producing large volumes of mostly identical products,
leading to competition and price reduction
• Intense competition results in lower profit margins and reduced prices
Intel Pentium 4 and Pentium M Pricing
Price reduces with time, as the manufacturing process matures and volume increases
IC Manufacturing
• Integrated circuit manufacturing starts from the production of
silicon wafers
• Silicon ingot is sliced into silicon wafers
• Wafers go through multiple processing steps
• Patterned wafers are tested and bad wafers are removed from
the population
• Good wafers are chopped into dies which go through another
testing process
• Good dies are packaged, re-tested and then sent to customers
Example: Intel Sandy Bridge
280 dies/300 mm wafer, 32nm process technology
Cost of an Integrated Circuit
Cost of an Integrated Circuit
Bose-Einstein formula:
• Wafer yield:
• accounts for wafers that are completely bad
• Defects per unit area:
• Measure of random manufacturing defects
• 0.016-0.057 defects per square cm (2010)
• N (Process complexity factor)
• Measure of manufacturing difficulty
• 11.5-15.5 (40 nm, 2010)
Yield Example
Problem:
Assume Wafer yield = 100%
Assume Defect Density = 0.031 per cm2
Assume N= 13.5
Compare die yields for a die that is 1.5 cm on a side with a die that is 1 cm on a side?
Yield Example
Problem:
Assume Wafer yield = 100%
Assume Defect Density = 0.031 per cm2
Assume N= 13.5
Compare die yields for a die that is 1.5 cm on a side with a die that is 1 cm on a side?
Solution:
Die A: 1.5 cm on a side
Area = 1.52 = 2.25cm2
Die Yield = 100% * 1/(1 + 0.031 * 2.25) 13.5 = 0.4
Yield Example
Problem:
Assume Wafer yield = 100%
Assume Defect Density = 0.031 per cm2
Assume N= 13.5
Compare die yields for a die that is 1.5 cm on a side with a die that is 1 cm on a side?
Solution:
Die A: 1.5 cm on a side
Area = 1.52 = 2.25cm2
Die Yield = 100% * 1/(1 + 0.031 * 2.25) 13.5 = 0.4
Die B: 1 cm on a side
Area = 12 = 1cm2
Die Yield = 100% * 1/(1 + 0.031 * 1)13.5 = 0.66
Yield Example (cont.)
Problem:
For the problem on previous page, compare the number of good dies for a 30 cm
wafer in each case.
Yield Example (cont.)
Problem:
For the problem on previous page, compare the number of good dies for a 30 cm
wafer in each case.
Solution:
Die A: 1.5 cm on a side
Dies per 30 cm wafer = π * ((30/2)2/(1.5)2 – 30/(2*(1.5)2)0.5) = 270
Die Yield = 0.4
Number of good dies per wafer = 270 * 0.4 = 108
Yield Example (cont.)
Problem:
For the problem on previous page, compare the number of good dies for a 30 cm
wafer in each case.
Solution:
Die A: 1.5 cm on a side
Dies per 30 cm wafer = π * ((30/2)2/(1.5)2 – 30/(2*(1.5)2)0.5) = 270
Die Yield = 0.4
Number of good dies per wafer = 270 * 0.4 = 108
Die B: 1 cm on a side
Dies per 30 cm wafer = π * ((30/2)2/(1)2 – 30/(2*(1)2)0.5) = 640
Die Yield = 0.66
Number of good dies per wafer = 640 * 0.66 = 422
Cost Summary
• Total cost is determined by many factors: raw material cost, wafer yield,
defect density, die size, testing costs, packaging costs etc.
• Manufacturing process dictates
– Wafer cost
– Wafer yield
– Defect density
• Architect/Designer controls
– Die size
• Larger die  less dies per wafer  Higher cost
• Larger die  Less die yield  Higher cost
– Package Pins
• I/Os
Cost vs. Price
• For commodity products (DRAM, disks, embedded processors), price
closely tracks cost (low profit margin)
– Lots of competitors
– Higher volumes  manufacturing costs easier to amortize
• For more specialized products (HPC, servers), price is significantly
higher than cost (high profit margins)
– Fewer competitors
– Lower volumes
• With the proliferation of low-end consumer devices (such as
smartphones), profit margins will continue to shrink in near-future