Download HMC221

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts

Power inverter wikipedia , lookup

Decibel wikipedia , lookup

Phone connector (audio) wikipedia , lookup

Control theory wikipedia , lookup

Electrical substation wikipedia , lookup

Distributed control system wikipedia , lookup

Mains electricity wikipedia , lookup

Dynamic range compression wikipedia , lookup

Resilient control systems wikipedia , lookup

Pulse-width modulation wikipedia , lookup

Distribution management system wikipedia , lookup

Variable-frequency drive wikipedia , lookup

Switch wikipedia , lookup

Schmitt trigger wikipedia , lookup

Alternating current wikipedia , lookup

Power electronics wikipedia , lookup

Metadyne wikipedia , lookup

Light switch wikipedia , lookup

Buck converter wikipedia , lookup

Crossbar switch wikipedia , lookup

Opto-isolator wikipedia , lookup

Tektronix analog oscilloscopes wikipedia , lookup

Switched-mode power supply wikipedia , lookup

Control system wikipedia , lookup

Microwave wikipedia , lookup

Transcript
'9
9
n
ew
!
HMC221
MICROWAVE CORPORATION
GaAS MMIC SOT26 SPDT SWITCH DC - 3 GHz
V01.0700
FEBRUARY 2001
Features
General Description
LOW INSERTION LOSS: 0.4 dB
The HMC221 is a low-cost SPDT switch in a 6lead SOT26 plastic package for use in general
switching applications which require very low
insertion loss and very small size. The device
can control signals from DC to 3.0 GHz and is
especially suited for 900 MHz, 1.8-2.2GHz, and
2.4GHz ISM applications with less than 1dB
loss. The design provides exceptional insertion
loss performance, ideal for filter and receiver
switching. RF1 or RF2 is a reflective short when
"Off". The two control voltages require a minimal
amount of DC current and offer compatibility
with most CMOS & TTL logic families. The
HMC221 is especially suited for PCMCIA wireless card and cellular phone applications. See
HMC197 for same performance in an alternate
SOT26 pin-out.
ULTRA SMALL PACKAGE: SOT26
INPUT IP3: +45 dBm
POSITIVE CONTROL: 0/+3V @ 10 µA
SMT
SPDT
SWITCHES
7
Guaranteed Performance Vctl = 0/+3 to +8 Vdc, -40 to +85 deg C
Parameter
Frequency
Min.
Typ.
Max.
Units
0.4
0.45
0.6
0.8
0.7
0.8
0.9
1.1
dB
dB
dB
dB
Insertion Loss
DC
DC
DC
DC
- 1.0
- 2.0
- 2.5
- 3.0
GHz
GHz
GHz
GHz
Isolation
DC
DC
DC
DC
- 1.0
- 2.0
- 2.5
- 3.0
GHz
GHz
GHz
GHz
24
24
21
14
28
28
25
18
dB
dB
dB
dB
Return Loss
DC
DC
DC
DC
- 1.0
- 2.0
- 2.5
- 3.0
GHz
GHz
GHz
GHz
20
17
16
11
23
22
20
15
dB
dB
dB
dB
Input Power for 1dB Compression
(Vctl = 0/+5V)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
25
23
30
29
dBm
dBm
Input Third Order Intercept
(Vctl = 0/+5V, +7 dBm each tone)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
40
38
45
43
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 3.0 GHz
3
10
nS
nS
12 Elizabeth Drive, Chelmsford, MA 01824
7 - 76
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
'9
9
ne
w
!
HMC221
MICROWAVE CORPORATION
HMC221 SOT26 SPDT SWITCH DC - 3 GHz
V01.0700
FEBRUARY 2001
Insertion Loss
Isolation
0
0
-10
ISOLATION (dB)
INSERTION LOSS (dB)
-0.5
-1
-1.5
-2
-20
-30
-40
-2.5
-3
-50
0
0.5
1
1.5
2
2.5
0
3
0.5
1
FREQUENCY (GHz)
1.5
2
2.5
3
FREQUENCY (GHz)
7
SWITCHES
Return Loss
0
-10
-15
SPDT
RETURN LOSS (dB)
-5
-20
-25
-30
0
0.5
1
1.5
2
2.5
SMT
-35
3
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 77
'9
9
n
ew
!
HMC221
MICROWAVE CORPORATION
HMC221 SOT26 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Input 0.1 and 1.0 dB
Compression vs Control Voltage
Input Third Order Intercept vs
Control Voltage
48
1 dB at 1900 MHz
900 MHz
1 dB at 900 MHz
INPUT THIRD ORDER
INTERCEPT(dBm)
INPUT POWER FOR 0.1 AND 1 dB
COMPRESSION (dBm)
35
30
25
0.1 dB at 900 MHz
20
46
44
42
1900 MHz
40
0.1 dB at 1900 MHz
15
38
3
4
5
6
7
8
2
9
3
CONTROL INPUT (Vdc)
Control
Input
6
7
8
9
Distortion vs Control Voltage
Compression vs Control Voltage
Carrier at 900MHz
5
CONTROL INPUT (Vdc)
Carrier at 1900MHz
Control Input
Input Power Input Power Input Power Input Power
for 0.1dB
for 1dB
for 0.1dB
for 1dB
Compression Compression Compression Compression
(Vdc)
(dBm)
(dBm)
(dBm)
(dBm)
+3
17
20
17
20
+5
25
30
24
29
+8
31
33
30
32
Third Order Intercept (dBm)
+7 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
+3
41
39
+5
45
43
+8
46
44
SMT
SPDT
SWITCHES
7
4
Caution: Do not operate in 1dB compression at power levels
above +31 dBm ( Vctl= +5 Vdc) and do not 'hot switch' power
levels greater than +20 dBm (VCTL = +5Vdc).
DC blocks are required at ports RFC, RF1 and RF2.
12 Elizabeth Drive, Chelmsford, MA 01824
7 - 78
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
'9
9
ne
w
!
HMC221
MICROWAVE CORPORATION
HMC221 SOT26 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Truth Table *Control Input Tolerances are +/- 0.2 Vdc
Functional Diagram
A
RF
COM
GND
RF1
B
(Vdc)
Ia
(uA)
Ib
(uA)
RF to
R F1
RF to
R F2
0
+3
-10
10
On
Off
+3
0
10
-10
Off
On
0
+5
-55
55
On
Off
+5
0
55
-55
Off
On
0
+7
-210
210
On
Off
+7
0
210
-210
Off
On
0
+8
-280
280
On
Off
+8
0
280
-280
Off
On
Absolute Maximum Ratings
Control Voltage Range (A & B)
-0.2 to +12Vdc
Storage Temperature
-65 to +150 deg. C
Operating Temperature
-40 to +85 deg. C
Signal Path
A
(Vdc)
PIN 1
RF2
Control
Current
Control Input *
B
7
SMT
SPDT
SWITCHES
Outline
1)
2.
3.
MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY
PLATING: LEAD-TIN SOLDER PLATE
DIMENSIONS ARE IN INCHES (MILLIMETERS)
UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 79
'9
9
n
ew
!
HMC221
MICROWAVE CORPORATION
HMC221 SOT26 SPDT SWITCH DC - 3 GHz
V01.0700
FEBRUARY 2001
Typical Application Circuit
Pin 1
A
RF2
GND
RFC
B
RF1
Vdd
CTL
Notes:
1.
2.
3.
4.
Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS logic gates.
DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V.
SMT
SPDT
SWITCHES
7
74HC04 or
74HCT04
12 Elizabeth Drive, Chelmsford, MA 01824
7 - 80
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
'9
9
ne
w
!
HMC221
MICROWAVE CORPORATION
HMC221 SOT26 SPDT SWITCH DC - 3 GHz
V01.0700
FEBRUARY 2001
Evaluation Circuit Board
Grounded Co-Planar Waveguide (GCPW)
Material
FR4
Dielectric Thickness
0.028" (0.71 mm)
50 Ohm Line Width
0.037" (0.94 mm)
Gap to Ground Edge
0.010" (0.25 mm)
Ground VIA Hole Diameter
0.014" (0.36 mm)
Connectors
SMA-F ( EF - Johnson P/N 142-0701-806)
12 Elizabeth Drive, Chelmsford, MA 01824
SMT
Layout Technique
SPDT
Evaluation Circuit Board Layout Design Details
7
SWITCHES
The circuit board used in the final application should use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground leads should be connected directly to the ground plane
similar to that shown below. A sufficient number of VIA holes should be used to connect the top and bottom
ground planes. The evaluation circuit board as shown is available from Hittite upon request.
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 81