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CHT-MOON
PRELIMINARY DATASHEET
Version: 1.0
25-Feb-11
(Last Modification Date)
High-Temperature Medium Power
Dual N-channel MOSFET
General description
Features
The CHT-MOON is a dual, high-voltage Nchannel MOSFET in a very dense CSOIC16
SMD package. It is designed to achieve high
performance in an extremely wide temperature
range: typical operation temperature goes from 55°C to 225°C while keeping leakage currents
low.
It has been optimized for use in low and medium
power DC-DC converters such as synchronous
buck operation, in combination with CISSOID’
PWM controller CHT-MAGMA. This product is
ideal for compact, high-efficiency DC-DC converters that supply voltages to applications
where the operating temperature is high or (and)
where reliability is critical.

Specified from -55 to +225°C (Tj)

Drain voltage up to 40V

RDSon (per transistor): 0.65Ω @ 225°C

VGS =0V to +5V

Reverse ESD diode between gate and
source.
Available in CSOIC16 package

Applications


SMPS, PoL and DC/DC converters
Low and medium-power push-pull
stages in motor drives and inverters
Package configurations
SOIC16
16
FVSS
D1 2
15
S1
D1 3
14
S1
13
S1
12
D2
11
D2
S2 7
10
D2
G2 8
9 FVSS
D1 4
S2 5
S2 6
CHT-MOON
G1 1
Pin #
1
2
3
4
5
6
7
8
Pin Name
G1
D1
D1
D1
S2
S2
S2
G2
9
FVSS
10
11
12
13
14
15
D2
D2
D2
S1
S1
S1
16
FVSS
Pin Description
MOSFET1 gate
MOSFET1 drain
MOSFET1 drain
MOSFET1 drain
MOSFET2 source
MOSFET2 source
MOSFET2 source
MOSFET2 gate
Input pin; to be connected to lowest voltage
MOSFET2 drain
MOSFET2 drain
MOSFET2 drain
MOSFET1 source
MOSFET1 source
MOSFET1 source
Input pin; to be connected to lowest voltage
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
Absolute Maximum Ratings
Operating Conditions
Gate-to-Source voltage VGS
-0.5V to 5.5V
Drain-to-Source voltage VDS
0V to 40V
VBACK-VS1
between -80V and 10V
VBACK-VS2
between -80V and 10V
Pulsed drain current IDS (Tpulse ≤ 2µs):
7A @ -55°C
6A @ 25°C
4A @ 225°C
Power dissipation Tc=25°C
3.33W
Gate-to-Source voltage VGS
Drain-to-Source voltage VDS
Junction temperature
ESD Rating (expected)
Human Body Model
0V to 5V
0V to 40V
-55°C to +225°C
See Thermal characteristics for power derating with
temperature
2kV
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is
not implied. Frequent or extended exposure to absolute maximum rating conditions or above may affect device reliability.
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
Electrical characteristics (per MOSFET)
DC Characteristics
Unless otherwise stated, Tj =25°C. Bold figures point out values valid over the whole temperature range (Tj =-55°C to
+225°C).
Parameter
Symbol
Condition
Min
Typ
Max Unit
0.85
1.95 V
Threshold voltage
VTH
VDS =50mV
1.6
VGS =0V, VDS=40V, Tj=25°C
0.7
nA
Drain cut-off current
IDSS
VGS =0V, VDS =40V, Tj=225°C
3.05
uA
VGS =5V, VDS =50mV, Tj=25°C
189
pA
1
Gate leakage current
IGSS
VGS =5V, VDS =50mV, Tj=225°C
72.1
nA
VGS =5V, VDS =50mV, Tj=-55°C
0.3
Ω
Static drain-to-source resistance
RDSon
VGS =5V, VDS =50mV, Tj=25°C
0.38
Ω
VGS =5V, VDS =50mV, Tj=225°C
0.65
Ω
40
Breakdown drain-to-source voltage2
VBRDS
VGS =0V
V
Dynamic Characteristics
Unless otherwise stated, Tj =25°C. Bold figures point out values valid over the whole temperature range (Tj =-55°C to
+225°C).
Parameter
Symbol
Condition
Min
Typ
Max Unit
Input capacitance
CISS
VGS =0VDC, DS shorted
370
pF
Output capacitance
COSS
VGS =0VDC, VDS =40VDC
50
pF
Feedback capacitance
CRSS
VGS =0VDC, VDS =40VDC
21
pF
Switching Characteristics
Unless otherwise stated, Tj =25°C. Bold figures point out values valid over the whole temperature range (Tj =-55°C to
+225°C).
Parameter
Symbol
Condition
Min
Typ
Max Unit
VDS =20V, VGS =5V 2µs pulse,
30
Turn-on delay time
Td(ON)
ns
RG=2.7Ω, RD=8.2Ω
VDS =20V, VGS =5V 2µs pulse,
50
Rise time
Tr
ns
RG=2.7Ω, RD=8.2Ω
VDS =20V, VGS =5V 2µs pulse,
35
Turn-off delay time
Td(OFF)
ns
RG=2.7Ω, RD=8.2Ω
VDS =20V, VGS =5V 2µs pulse,
15
Fall time
Tf
ns
RG=2.7Ω, RD=8.2Ω
VDS =40V, VGS =5V 2µs pulse,
6.6
A
-55°C
VDS =40V, VGS =5V 2µs pulse,
Drain current
ID
5.7
A
25°C
VDS =40V, VGS =5V 2µs pulse,
3.9
A
225°C
Thermal Characteristics
Parameter
Thermal resistance
(junction to air, CSOIC16)
1
2
Symbol
Condition
ΘJA
Min
Typ
60
Max
Unit
°C/W
Includes ESD diode leakage current.
Voltage for which the cut-off current evolution versus VDS becomes exponential.
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
Typical Performance Characteristics (per MOSFET)
1.40
0.18
-55°C
0.14
Drain current [A]
Drain to source resistance [Ohms]
0.16
25°C
0.12
0.10
125°C
0.08
175°C
225°C
0.06
0.04
0.02
0.00
1.20
1.00
0.80
225°C
175°C
0.60
125°C
25°C
-55°C
0.40
0.20
0.00
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
Gate to source voltage [V]
Drain current vs. gate voltage (VD = 50mV)
On-state Drain to source resistance [Ohms]
Cut-off drain current [A]
1.0E-06
1.0E-07
1.0E-08
1.0E-09
1.0E-10
1.0E-11
-50
0
50
100
150
3.0
4.0
5.0
Drain source resistance vs. Drain source voltage
(VD = 50mV)
1.0E-05
-100
2.0
Gate to source voltage [V]
200
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-100
250
-50
0
50
100
150
200
250
Temperature [°C]
Temperature [°C]
Cut-off current vs. temperature (VG =0V, VD = 40V)
On-state drain source resistance vs. temperature
(VG =5V, VD =50mV)
1.80E+00
1.00E-06
1.40E+00
Gate leakage current [A]
Threshold Voltage [V]
1.60E+00
1.20E+00
1.00E+00
8.00E-01
6.00E-01
4.00E-01
2.00E-01
1.00E-07
1.00E-08
1.00E-09
1.00E-10
0.00E+00
-100
-50
0
50
100
150
200
250
1.00E-11
-100
Temperature [°C]
-50
0
50
100
150
200
250
Temperature [°C]
Threshold voltage vs. temperature
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Gate and ESD diode leakage current vs. temperature (VG =5V, VD =50mV)
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
7.0
6.0
Maximum Drain Current [A]
VGS (0 to 5V)
VDS (40 to 30V)
IDS (0 to 6.6A)
T = -55°C
5.0
4.0
3.0
2.0
1.0
0.0
-100
-50
0
50
100
150
200
250
Temperature [°C]
Maximum drain current pulse test (T =-55°C)
Peak drain current vs. temperature (VG = 5V, VD = 40V)
VGS (0 to 5V)
VGS
VDS
VDS (40 to 36V)
(a )
RD
IDS (0 to 5.7A)
T = 25°C
VGS
RG
VDS
(b )
Maximum drain current pulse test (T =25°C)
IDMAX
(a)
measurement scheme R=1Ω, C=100µF, Compliance (VDS=40V)=20mA (b) Timing measurement
scheme RG=2.7Ω, RD=8.2Ω, VDS=20V
VGS (0 to 5V)
VDS (40 to 38V)
IDS (0 to 3.9A)
T = 225°C
Maximum drain current pulse test (T =225°C)
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Timing definition diagram
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
80
10.00
Td(ON)
Tr
Td(OFF)
Tf
70
60
1.00
Drain current [A]
Time [ns]
50
40
30
20
10
0.10
0
-100
-50
0
50
100
150
Temperature [°C]
Timing parameters versus temperature
200
250
RDS(on) Limited
area (VGS=5V)
Power Limited
SINGLE PULSE (DC)
Tj=225°C
Tc=25°C
0.01
1
10
100
Drain voltage [V]
Forward bias safe operating area
(drain current = sum of drain current in both MOSFET devices)
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
General description
Applications
The 2 NMOS devices of CHT-MOON can be used in a variety of combinations. The figure
below illustrates a few of them.
VDD
A p p l3
A p p l2
A p p l1
VSS
In Application1, the 2 NMOS are connected in parallel; this is useful for systems where Ron
(and associated power dissipation) should be minimized
In Application2, the 2 NMOS form the push-pull stage of a half-bridge driver. This is the typical use case of a DC/DC synchronous buck converter.
In Application3, the 2 NMOS implement the high side of a bridge driver.
In all cases, FVSS signal should be connected to the lowest potential e.g. VSS.
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
Ordering Information
Ordering Reference
CHT-PLA2016A-CSOIC16-T
Package
CSOIC16
Temperature Range
-55°C to +225°C
Marking
CHT-PLA2016A
Package Drawing
10.45
2.15
10.25
7.45
4.8
0.55
1.6-2.1
9.00
Typ 10.00 / Max 11.00
7.15
7.45
0.20
1.27
0.42
CSOIC 16 Drawing (mm +/- 10%)
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CHT-MOON- High-Temperature
Medium
Dual N-channel MOSFET –PRELIMINARY DATASHEET
(Last Modification Date)
Contact & Ordering
CISSOID S.A.
Headquarters and
contact EMEA:
CISSOID S.A. – Rue Francqui, 3 – 1435 Mont Saint Guibert - Belgium
T : +32 10 48 92 10 - F: +32 10 88 98 75
Email: [email protected]
Sales
Representatives:
Visit our website: http://www.cissoid.com
Disclaimer
Neither CISSOID, nor any of its directors, employees or affiliates make any representations or extend any warranties
of any kind, either express or implied, including but not limited to warranties of merchantability, fitness for a particular
purpose, and the absence of latent or other defects, whether or not discoverable. In no event shall CISSOID, its directors, employees and affiliates be liable for direct, indirect, special, incidental or consequential damages of any kind
arising out of the use of its circuits and their documentation, even if they have been advised of the possibility of such
a damage. The circuits are provided “as is”. CISSOID has no obligation to provide maintenance, support, updates, or
modifications.
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