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Transcript
icySoC
RTD 2013
Ultra low power processing based
on a sub-threshold implementation
[email protected] www.csem.ch
M. Pons1, D. Séverac1, J-L. Nagel1, D. Ruffieux1, S. Emery1, P. Rochaix2
1 CSEM
SA,2 EM Microelectronic-Marin SA
The main goal of sub- or near-threshold design (i.e. integrated circuits supplied with a voltage lower or just above MOS transistor threshold voltage) is to
reduce the dynamic power consumption (and therefore the energy per cycle in a processing circuit) by decreasing the supply voltage. At these low voltages,
digital standard cell libraries and memories need to be revisited to ensure integrated circuits correct operation. A standard cell library as well as memory
blocks have been designed in EM Microelectronic Marin ALP 180 nm technology. Those building blocks have been used for the design and integration of a
CSEM 32-bit icyflex2 processor system. Corner lot measurements show robust operation of the circuit over process, voltage and temperature, reaching a
minimum supply of 0.37 V and a minimum energy per cycle of 17.1 pJ/cycle. The 32-bit icyflex2 processor system is in fact able to work supplied by a single
PV-cell. The integration therefore validates the design of the building blocks and demonstrates the capabilities of sub- and near-threshold techniques.
EM Microelectronic Marin ALP 180 nm sub-threshold building blocks
• Sub-threshold building blocks have been developed for designing complete ultra low power systems using a single power supply domain.
ROM building block
RAM building block
• Power supply range: 0.54V to 1.8V
• Power supply range: 0.54V to 1.8V
• Size: 2048 bytes
• Size: 256 bytes
ROM Memory
SRAM Memory
• Bit-cell: 6T
Complete sub-threshold design
Standard cell library
• Power supply range: 0.54V to 1.8V
• Power supply range: 0.54V to 1.8V
 Single power domain
• L=300nm
Complete design
• 72 cells
Standard cell library
CSEM 32-bit icyflex2 processor system
Integration measurement results
Temperature sensitivity (TT process)
Micrograph of the test chip.
The equivalent gate count of the
icyflex2 core is 40 kgates.
icyflex2 system description
• The icyflex2 core is composed of four distinct units:
Corner lot measurements
• The program sequencing unit (PSU)
• The data move unit (DMU)
• The data processing unit (DPU)
• The host and debug unit (HDU)
• The system includes GPIO, JTAG, SPI and Timer peripherals.
• Optimized high range level shifters are inserted in pads.
icyflex2 system evaluation
• Software self-test (MBIST) of RAM, using March C algorithm.
• MBIST executed by the icyflex2 core from the ROM, without support
from the RAM  test for all building blocks.
|
Rue Jaquet-Droz 1
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• Robust operation over process: TT, SS, FF, SF, FS (corner lot)
• Robust operation over temperature: -25°C to 75°C
• Robust operation over a wide supply range: 0.37V to 1.8V
• Minimum energy per cycle of 17.1 pJ/cycle
• Tested to work directly on a PV-cell (enables energy harvesting)
• Passed or failed test is output on the GPIOs.
CSEM SA
Main results
CH-2002 Neuchâtel
| EM Microelectronic-Marin SA | Rue des Sors 3 | CH-2074 Marin-Epagnier