Download Hiroshima_IvanPeric

High-Voltage Pixel Sensors for ATLAS Upgrade
Ivan Peric
for HVCMOS collaboration
University of Heidelberg, Germany
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
1
HVCMOS detectors
•
•
•
HV CMOS detectors (particle detectors in standard HV-CMOS technologies) are depleted active
pixel detectors
Main charge collection mechanism is drift (certain signal part is collected by diffusion as well)
Implemented in commercial CMOS (HV) technologies (350nm and 180nm)
PMOS
NMOS
deep n-well
Drift
Potential energy (e-)
Depletion zone
Diffusion
p-substrate
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
2
HVCMOS detectors
•
•
•
•
Collection electrode is a deep-n-well in a p-substrate
Pixel electronics is embedded in the n-well (PMOS: directly, NMOS in a P-well)
Can be implemented in many commercial technologies (we tried also 65nm UMC CMOS);
however the possibility to bias the n-well with a relatively high voltage is important
Best properties offer HV CMOS technologies – the n-well is deep enough so that reverse voltages
of up to ~120V can be used (no punch through between p-well and substrate)
deep n-well
Drift
Potential energy (e-)
Depletion zone
Diffusion
p-substrate
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
3
HVCMOS detectors
•
•
•
Example for AMS: 20/10 cm (350/180nm CMOS) substrate resistance -> acceptor density ~ 1015
cm-3
Depleted layer thickness estimation from the technology datasheet (area capacitance) for 60V
bias (120 max): 10µm (350nm), 7µm (180nm)
Typical measured MIP signal for a 50 µm x 50 µm pixel in AMS 0.35 µm (60V bias): 1800e (we
estimate about 800e from depleted region and about 1000e by diffusion)
deep n-well
Drift
Potential energy (e-)
Depletion zone
Diffusion
p-substrate
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
4
HVCMOS detectors
•
•
•
Example for AMS: 20/10 cm (350/180nm CMOS) substrate resistance -> acceptor density ~ 1015
cm-3
Depleted layer thickness estimation from the technology datasheet (area capacitance) for 60V
bias (120 max): 10µm (350nm), 7µm (180nm)
Typical measured MIP signal for a 50 µm x 50 µm pixel in AMS 0.35 µm (60V bias): 1800e (we
estimate about 800e from depleted region and about 1000e by diffusion)
diffusion
diffusion
diffusion
Seed:
drift+
diffusion
diffusion
diffusion
diffusion
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
5
Development in 350nm Technology
•
•
•
•
•
•
•
•
•
Two development periods: 1) general development and 2) applications
In 1) we used AMS 0.35µm technology
Several prototypes have been designed
Three detector types:
A) Monolithic detector with intelligent CMOS pixels
Pixel electronic is rather complex – CMOS based charge sensitive amplifier, usually discriminator,
threshold tune…
B) Monolithic detector with 4-PMOS-transistor pixel and rolling shutter RO
C) Capacitively coupled hybrid detectors
Good results, >98% efficiency in test-beam, high radiation tolerance
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
6
Development in 350nm Technology
•
•
•
•
•
•
•
•
•
Two development periods: 1) general development and 2) applications
In 1) we used AMS 0.35µm technology
Several prototypes have been designed
Three detector types:
A) Monolithic detector with intelligent CMOS pixels
Pixel electronic is rather complex – CMOS based charge sensitive amplifier, usually discriminator,
threshold tune…
B) Monolithic detector with 4-PMOS-transistor pixel and rolling shutter RO
C) Capacitively coupled hybrid detectors
Good results, >98% efficiency in test-beam, high radiation tolerance
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
7
Test-Beam Results
Efficiency vs. the in-pixel position of
the fitted hit.
Efficiency at TB: ~98% (probably due
to a rolling shutter effect)
Seed pixel SNR 27, seed signal
1200e, cluster 2000e
Simple (4T) integrating pixels with pulsed reset and
rolling shutter RO
21x21 µm pixel size
Spatial resolution
3-3.8µm
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
Development for Mu3e Detector
•
•
•
•
•
•
•
•
The first applications of HVCMOS detectors will be the Mu3e experiment at PSI and the luminosity
monitor for Panda experiment (GSI)
180nm HVCMOS technology chosen due to lower power consumption
Low particle energy, thin detector required => monolithic pixel detector, thinned to 50µm
Pixels contain only CSAs, every pixel connected to its readout cell, placed at the chip periphery,
by an individual wire
The concept is feasible for large pixels (80µm x 80µm)
Advantages: minimal pixel capacitance, optimal SNR, separation of digital and analog circuits
Disadvantage: inactive periphery (about 5%)
Collaboration: Heidelberg PI and ZITI, PSI, ETH und University Zürich, University Geneva
Readout cells
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
9
Development for Mu3e Detector
•
•
•
•
•
•
•
•
The first applications of HVCMOS detectors will be the Mu3e experiment at PSI and the luminosity
monitor for Panda experiment (GSI)
180nm HVCMOS technology chosen due to lower power consumption
Low particle energy, thin detector required => monolithic pixel detector, thinned to 50µm
Pixels contain only CSAs, every pixel connected to its readout cell, placed at the chip periphery,
by an individual wire
The concept is feasible for large pixels (80µm x 80µm)
Advantages: minimal pixel capacitance, optimal SNR, separation of digital and analog circuits
Disadvantage: inactive periphery (about 5%)
Collaboration: Heidelberg PI and ZITI, PSI, ETH und University Zürich, University Geneva
VN 20, VNFoll 2
1,0
mu
sig
956.0343e
64.28302e
Signal fraction
0,8
0,6
0,4
0,2
Readout cells
0,0
0
500
1000
1500
2000
Input referred threshold [e]
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
10
Development for ATLAS
•
•
•
•
•
•
Also the use in HL LHC ATLAS upgrade is investigated
Concept: The use of active HVCMOS sensors as replacement for the standard strip- and pixelsensors and the use of existing (or slightly modified) readout ASICs
Group of pixels connected to one readout channel, address information is coded as signal
amplitude
Realization: one pixel contains: CSA, comparator, threshold tune circuit and the address
generator
Address signals of the grouped-pixels are summed and connected to the input of the RO-channel
Collaboration: CPPM, CERN, Universities of Geneva, Bonn, Göttingen, Glasgow, Liverpool,
Heidelberg, LBNL,…
A
ROC
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
11
Pixel Readout
•
•
•
Pixel readout: three pixels connected to one readout channel of the ATLAS FEI-chip (FEI4)
Capacitive sensor-to-chip signal transmission, no need for bump bonds
Advantages: smaller pixels, different pixel geometries can be combined with one ASIC (e.g. for
the end caps), little material, fast readout, good resolution for large incident angles
Pixel readout chip (FE-chip)
Pixel electronics based on CSA
Coupling
capacitance
Bump-bond pad
Glue
Summing line
Transmitting
plate
Pixel CMOS sensor
33x 125 μm
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
12
Strip Readout
•
•
•
•
Strip readout: larger number of pixels (e.g. 100) grouped into segmented strips, readout with an
amplitude sensitive strip-readout chip (multichannel chip)
Advantages: Pixel detector (nxn pixels) is readout with a relatively small number of analog
channels (~n) – in contrast to rolling shutter readout, time resolution is high
Less material than in the case of the hybrid pixel detector and a similar time resolution.
If summing scheme can cope with two simultaneous hits, the concept can work at relatively high
occupancies (e.g. 8 particles / cm2 / 25ns )
Summing line
Every pixel generates unique current
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
13
Experimental Results
•
•
•
•
•
•
•
Results of the project
A small detector prototype chip “CCPD” has been designed
CCPD can be readout with both a strip- and a pixel-readout chip
Stand-alone readout is also possible
Two chip iterations
1) optimized for small noise
2) optimized for radiation tolerance
CCPD Pixels
2
2
3
3
1
1
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
14
Experimental Results
•
•
•
•
•
•
•
Results of the project
A small detector prototype chip “CCPD” has been designed
CCPD can be readout with both a strip- and a pixel-readout chip
Stand-alone readout is also possible
Two chip iterations
1) optimized for small noise
2) optimized for radiation tolerance
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
15
Experimental Results
•
•
•
•
•
Three testing programs:
1) Test in standalone modus: a) lab tests with electric signals (using charge injection circuit) and
b) measurements with radioactive sources. Goals: functionality tests, measurements of noise,
threshold dispersion, and the MIP signal amplitude
2) Irradiations
3) Tests with pixel readout chip (it works - three addresses can be distinguished, first testbeam
measurement done, time stamp distribution ok => good time resolution)
4) Tests with strip readout chip (still to be done)
Signal amplitudes measured by FEI4
CCPD Pixels
2
2
3
3
1
1
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
16
Standalone Tests
•
•
•
Test in the standalone mode:
Pixel addresses connected to a monitor line that can be accessed from outside via single IO pad
Several CSA outputs can be measured directly – allows spectral measurements
pixels
Monitor line
Analog-multiplexer
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
17
MIP Signal
•
•
•
Several CSA outputs can be measured directly – allows spectral measurements
Measured Sr-90 MPW signal at rather low 30V bias voltage (maximal 120V) ~1350e (we estimate
400e from depleted region at 30V – diffusion part 950e)
Estimated MIP signal for 60V bias: 1500e
Sr90:
1400 e
Fe55:
1660 e
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
18
Noise and Threshold Dispersion
•
•
•
•
•
Threshold and injection scans – noise, threshold dispersion
Results for CCPD2 optimized for radiation hardness (not for low noise)
Average pixel noise ~ 75e (large spread)
Threshold tuning: dispersion ~ 25e
Estimated MIP signal at 60V: 1500e
Threshold dispersion
Noise distribution
Mean: 891e
Sigma: 24e
25
100
20
80
Pixel count
Pixel count
120
Simple pixels
30
15
10
60
40
20
5
0
40
60
80
100
120
Noise [e]
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
0
800 820 840 860 880 900 920 940 960 980 1000
Input referred threshold [e]
19
Noise and Threshold Dispersion
•
•
•
•
•
•
•
Average pixel noise ~ 75e (large spread)
Threshold tuning: dispersion ~ 25e
Estimated MIP signal at 60V: 1500e
Required:
6 x SD(Noise) + 6 x SD(Threshold) = Smallest signal
6 x SD(Noise) + 6 x SD(Threshold) = 600e
Question: what is the smallest signal for a MPW of 1500e? (probably ~ 1500/2 = 750 e)
MPW
Mean Th
Base line
Smallest signal
Smallest signal ~ 6(SD(Noise) + SD(Threshold))
~750e
1500e
Landau distribution
Noise
Threshold dispersion
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
20
Noise and Threshold Dispersion
•
•
•
•
•
•
•
•
Average pixel noise ~ 75e (large spread)
Threshold tuning: dispersion ~ 25e
Estimated MIP signal at 60V: 1500e
Required:
6 x SD(Noise) + 6 x SD(Threshold) = Smallest signal
6 x SD(Noise) + 6 x SD(Threshold) = 600e
Question: what is the smallest signal for a MPW of 1500e? (probably ~ 1500/2 = 750 e)
In theory ok, but we still need to improve threshold tuning, so far we achieved a mean value of
~800e, 400e is required
MPW
Mean Th
Base line
Mean: 891e
Sigma: 24e
120
Smallest signal
100
Pixel count
Smallest signal ~ 6(SD(Noise) + SD(Threshold))
~750e
1500e
80
60
40
Landau distribution
20
0
Noise
800 820
Threshold dispersion
840 860 880 900 920 940 960 980 1000
Input referred threshold [e]
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
21
Irradiations – older Results
•
•
•
•
•
Irradiation studies:
Two damage mechanisms: nonionizing and ionizing
Results are generally promising, but we still do not have the results from a test-beam
measurement with irradiated devices
Older results (AMS 0.35µm technology)
X-ray irradiation up to 60 Mrad (rad-hard device layout – enclosed transistors, chip on during
irradiation) – increased noise and leakage current observed - after annealing and cooling they
return to normal noise
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
22
Irradiations – older Results
•
•
•
Older results:
Proton irradiation to 1015 neq/cm2 (standard device layout, chip off during irradiation) – increased
leakage and noise – the MIP signal does not decrease significantly – diffusion still works?
Neutron irradiation to 1014 neq/cm2 (rolling shutter chip) – increased leakage and noise – diffusion
part of the signal is decreased
Proton irradiation
Neutron irradiation
22
Na - 0V bias (0.075V or 1250e)
Na - 30V bias (0.18V or 3125e)
22
Na - 60V bias (0.22V or 3750e)
55
Fe - 60V bias (100mV or 1660e)
RMS Noise (2.4mV or 40e)
Temperature: - 10C
15
Irradiated with protons to 10 neq
22
1.0
0.6
0.4
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
signal amplitude [V]
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
0.7
0.8
Co Irradiated chip (1014 neq)
60
Signal [e]
~number of signals
0.8
Not irradiated
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
Not irradiated
Irradiated
0
1
2
3
4
5
6
Number of pixels in cluster
23
Irradiations – CCPD1
•
•
•
•
1) Two sets of detectors have been irradiated to 435 Mrad and 80 Mrad with protons at the PS
(CERN) (chips on during irradiation)
2) X-ray irradiation to 50 Mrad (chips on during irradiation)
3) Neutron irradiation to 1016 neq/cm2 (chips off during irradiation, only nonionizing damage)
Influence of ionizing radiation higher than expected. Despite of that, Sr-90 spectrum can be
measured after 80Mrad (proton irradiation)
CCPD1 at 380 Mrad (81015 neq) proton-irradiation
Beam signals
CCPD1 irradiated to 80 Mrad with protons
Sr-90 spectrum
24
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
Irradiations – CCPD1
•
•
Chips were affected by x-ray irradiation (ionizing) strongly - large amplifier gain drop
The chip irradiated to 435 Mrad works (responds to test signals), but particle signals can not be
distinguished from noise after about 380 Mrad (gain drop too high – high threshold, large leakage,
activation, cooling not possible)
Initial rate
Better settings
Another beam position
60V bias
30V bias
Better settings
Wrong settings
CCPD1 irradiated with x-rays
Amplifier gain loss
CCPD1 irradiated to with protons
Count rate
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
25
Irradiations – CCPD1
•
The detector irradiated with neutrons (1016 neq/cm2) works (capacitively readout by FEI4),
particles can be clearly detected at the room temperature, testbeam measurement has been done
and will give us the rough estimation about the efficiency (setup is not optimized – e.g. no
threshold tuning done)
26
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
CCPD2: X-Ray Irradiation to 862 Mrad
•
•
•
•
•
•
•
Several weak points in design have been identified that cause CCPD1 to be susceptible to
ionizing radiation (symptoms are: gain drop and base line shift)
The weak pints have been fixed in CCPD2 (at expense of a slightly higher noise)
CCPD2 implements three pixel types, fully rad hard, partially rad hard and a simple pixel that uses
positive feedback and has a CMOS comparator
A detector has been irradiated to 862 Mrad with x-rays. (chips on during the irradiation, 2 hours of
annealing at 70C after each 100Mrad)
Result for one partially rad hard pixel: input referred noise before irradiation 25mV (90 e)
Input referred noise after irradiation 40mV (150 e) at room temperature
We observe that amplifiers work with reduced bias current (2µA instead of 5µA) – probably only
partially rad hard pixels are affected – bias NMOS diode can be affected by oxide charge
90e
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
862 Mrad
150e
27
CCPD2: X-Ray Irradiation to 862 Mrad
•
•
•
•
The noise increase can be addressed to
1) Gain drop (by factor of two for the pixel)
2) Bias current drop (2µA instead of 5µA per amplifier) (under this condition we would have only
48 mA preamp current consumption per cm2 detector area)
3) HV leakage current
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
28
CCPD2: X-Ray Irradiation to 862 Mrad
•
•
•
Sr-90 spectra have been recorded before and after irradiation - no sign of signal loss at sensor
1V Injection (5000 e): 430 mV
Sr-90 spectrum
2500 e
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
29
CCPD2: X-Ray Irradiation to 862 Mrad
•
•
•
•
•
•
Several effects are still not understood
The cause of the gain drop
Several possibilities:
Observed drop in the amplifier bias current
Possible decrease of the feedback resistance, due to ionizing damage in the feedback transistor
=> shaping time decrease
Notice that the fully rad hard pixels are not significantly affected
Fully rad-hard pixels
Partially rad-hard pixels
10 days annealing
450
260
Pixel1
Pixel2
Pixel3
Pixel4
240
220
200
400
350
300
Amplitude [mV]
180
Amplitude [mV]
Pixel1
Pixel2
Pixel3
Pixel4
160
140
120
2h 70C annealing
100
80
250
200
150
100
60
40
Re-optimization of the settings
Dose 862 Mrad
20
0
0
200
400
600
800
1000
Dose [Mrad]
1200
50
0
0
200
400
600
800
1000
1200
Dose [Mrad]
Re-optimization of the settings
Dose 862 Mrad
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
30
CCPD2: X-Ray Irradiation to 862 Mrad
•
•
•
•
•
•
Several effects are still not understood
The origin of HV leakage current
The current gets higher for lower (!) n-well voltage
Parasitic PMOS? trapping of electrons in SiO2?
Injection of holes into n-well and their flow to p-substrate?
Tunneling of trapped holes from SiO2 to substrate?
e- e-
3,5
Leakage current per pixel [nA]
0V
3,0
10 days annealing
1.8V
-50
2,5
2,0
-60V
1,5
-60V
1,0
Possible cause of leakage current?
0,5
0,0
0
200
400
600
800
1000
Dose (Mrad)
2h 70C annealing
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
31
CCPD2: X-Ray Irradiation to 862 Mrad
•
The radiation hardening measures done for CCPD2 seem to be successful
260
Pixel1
Pixel2
Pixel3
Pixel4
240
220
200
Amplitude [mV]
180
160
862 Mrad
140
120
100
80
60
862 Mrad
40
20
0
0
200
400
600
800
1000
1200
Dose [Mrad]
862 Mrad
CCPD1 irradiated with x-rays
Amplifier gain loss
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
CCPD2 irradiated with x-rays
Amplifier gain loss
Rad hard pixels
32
Segmented Strip Measurements
•
Setup
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
33
Segmented Strip Measurements
•
Strip measurement circuit
Fe55
Absorber
Amp
Th1
Monitor
Oscilloscope
Chip
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
34
Segmented Strip Measurements
•
Strip measurement circuit
Fe55
Absorber
Amp
Th1
Oscilloscope
Monitor
800
Chip
Analog addresses
700
Counts
600
500
400
300
200
100
0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
Measured voltage [V]
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
35
Segmented Strip Measurements
•
Strip measurement circuit
Fe55
Absorber
Amp
Th1
Oscilloscope
Monitor
10
1100
962,5
800
Chip
825,0
Analog addresses
687,5
8
700
550,0
412,5
275,0
Pixel Row
Counts
600
500
400
6
137,5
0
4
300
200
2
100
0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
Measured voltage [V]
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
1,6
1,8
10
Pixel Column
36
Conclusion
•
•
•
•
•
•
•
•
•
•
•
•
We are investigating the use of HVCMOS detector for HLLHC ATLAS upgrade
Test detectors CCPD1 (rad soft design) and CCPD2 (rad hard design) work
MIP signal (1500 e), noise (75e) and threshold dispersion (25 e) values are good enough for
efficient detection, however threshold tuning still have to be improved
CCPD1 has been irradiated with x-rays, protons and neutrons, it is affected by ionizing radiation
stronger than expected, however operation up to ~80Mrad is possible
CCPD2 has been irradiated to 860Mrad with x-rays, it works, noise doubled at room T
The noise increase can be mitigated by cooling and design optimization
Irradiations of CCPD2 with neutrons and protons are planned
Operation after 1015-16 neq/cm2 could be possible if the diffusion signal is not entirely lost after
these fluencies
Plans for the next small test-detector
Optimization of noise by increasing feedback resistance, bias current, etc.
Optimization of pixel geometry
Design and production of a larger test-detector (e.g. 1 cm2) planned for 2014
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
37
Properties of HVCMOS Detectors
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Good properties:
Fast charge collection (field ~ 6-8.5V/µm, collection time ~ 100ps)
High radiation tolerance
Thinning is possible (active region several 10µm at the surface)
Relatively cheap due to the use of a commercial process (1.5 kEUR / 8inch wafer)
Disadvantages:
Small depleted region, relatively small primary- (drift collected) signal, pixel capacitance ~100fF
for larger pixels
We expect that the drift-collected signal does not decrease with irradiation, the question is how
much of the diffusion part remains
SNR can be improved using the charge sensitive amplifier at the cost of increased power
Main challenges: achieve good detection efficiency and low time walk for a given power budget
Simulation example for 30µm x 125µm pixel: a good SNR and a time walk of about 10ns can be
achieved at the power consumption of about 100mW/cm2
Some limitations arise from the fact that the electronic is placed inside the collecting electrode
Additional capacitance, crosstalk
Solution: the use of simplified pixel electronics
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
38
Thank you!
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
39
Backup Slides
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
40
Pixel electronics (1)
Amplifier
Circular devices
CCPD electrode
G
SFOut
Circular devices
Filter
BL
Comparator
Output stage
(CR filter)
A
D
Th
Cap. Injection
In<0:3>
RW
G
Programmable current
4-bit DAC
CCPD bus
Strip bus
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
41
Simple Pixel
Discriminator
SelABuf
ABuf
Vdd
BLR
ThP
BL
1.8
A
4
Positive FB
OutAmp
3
2
1.8
(CR filter)
OutSF
0
OutBL
ThR
VNSF
OutDisc
Gnd
HB
OutDisc2
Sel
StripIn
StripOut
OutDisc3
Ivan Peric, 9th Hiroshima Symposium, Hiroshima, 2013
42
Standard pixel
EnL/R=1 - enables CCPD, disables hitbus/strip
InR(3:0)
row0(R),row1(L)
EnR
st
so
EnR EnR
EnL
EnL
9
10
11
6
7
8
En(5:0)
row2(R),row3(L)
InL(3:0)
En(11:6)
EnL
L0
EnR EnL
0
1
R0
L1
R1
L2
R2
Str
Ld(0:2)
dc
ao
2
EnL EnR
monitor
3
4
5
str
ampout
En(5:0)
st
so
L0
R0
ampout
PL
dc
PR
PL
Col(0:2)
ao02013 Col(3:5)
Ivan Peric, 9th Hiroshima Symposium,
Hiroshima,
ao1
43
Simple Pixel
EnL/R=1 – enables hitbus; strip and CCPD are always on
InR(3:0)
row0(R),row1(L)
EnR
EnR EnR
EnL
EnL
9
10
11
6
7
8
En(5:0)
row2(R),row3(L)
InL(3:0)
En(11:6)
EnL
EnR EnL
0
1
h0
h1
h2
h0
h1
h2
nu
sl
sr
S1
S0
Str
Ld(0:2)
dc
ao
2
EnL EnR
monitor
3
4
5
str
ampout
En(5:0)
2
0
5
4
h0
h1
h2
1
3
ampout
PL
dc
dc
PR
PL
ao12013 Col(3:5)
Ivan Peric, 9th Hiroshima Col(0:2)
Symposium,S(3:2)
Hiroshima,
S(1:0)
ao0
PR
44
Simple Pixel
EnL/R=1 – enables hitbus; strip and CCPD are always on
hit
in
InR(3:0)
row0(R),row1(L)
EnR
EnR EnR
0
EnL
EnL
out
9
out
11
10
in
in
out
7
6
En(5:0)
row2(R),row3(L)
InL(3:0)
En(11:6)
EnL
in
4
8
4
6
EnR EnL
in
0
2
in
2
1
out
out
h0
h1
h2
h0
h1
h2
nu
sl
sr
S1
S0
Str
Ld(0:2)
dc
ao
out
EnL EnR
in
4
3
out
monitor
5
str
ampout
2
En(5:0)
sl
ampout
PL
dc
dc
PR
PL
ao12013 Col(3:5)
Ivan Peric, 9th Hiroshima Col(0:2)
Symposium,S(3:2)
Hiroshima,
S(1:0)
ao0
PR
45
Simple Pixel
EnL/R=1 – enables hitbus; strip and CCPD are always on
hit
in
InR(3:0)
row0(R),row1(L)
EnR
EnR EnR
EnL
out
9
4
10
in
11
out
EnL
En(5:0)
row2(R),row3(L)
InL(3:0)
En(11:6)
EnL
0
out
6
in
7
in
EnR EnL
0
8
in
1
out
2
4
h0
h1
h2
h0
h1
h2
nu
sl
sr
S1
S0
Str
Ld(0:2)
dc
ao
2
in
3
out
4
2
in
EnL EnR
out
6
monitor
5
out
str
ampout
En(5:0)
sr
ampout
PL
dc
dc
PR
PL
ao12013 Col(3:5)
Ivan Peric, 9th Hiroshima Col(0:2)
Symposium,S(3:2)
Hiroshima,
S(1:0)
ao0
PR
46