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Application of Sputtering Method to the Observation of Rotational Spectra of Metal-containing Molecules M.Tanimoto , E.Y.Okabayashi , F.Koto , T.Okabayashi Shizuoka University Introduction Transition Metal Compounds Catalysis Astrophysics New Material Spectroscopic study : difficult High melting point (involatile) Quantum chemical calculation difficult d-electrons high spin multiplicity high orbital angular momentum complicated electronic structure High Resolution Spectroscopy Formation of transient transition metal compounds 1.Vaporization (High Temperature Cell) Up to 2000 degree C possible High density 2.Discharge of volatile compounds (e.g. Fe(CO)5) Expensive , often toxic Reaction conditions difficult to select 3.Laser ablation Used in combination with FTMW Not suitable for our spectrometer (low concentration) 4.Sputtering reaction Fe + H2S FeS Experimental Set-up AlCl3 + He discharge AlCl Power Supply liq.N2 pump multiplier InSb Heater Amp. klystron PSD He PC Unknown species 6 lines equal intensity rather wide separation High spin state , possibility of metal compound Electrode (stainless steel : Fe , Ni , Cr) CrCl Sputtering from electrode material After observing CrCl FeCl : 6Di 2 lowest spin substate of W (W= 9/2 , 7/2) Linewidth FeCl < CrCl dipole moment FeCl < CrCl Stainless Steel Fe : Cr = 80 : 18 Electronic Structure of the NiX radicals –1 (cm ) 4000 NiF NiCl NiBr NiI 2 D3/2 2224 2000 2 + 1574 1768 1646 2 + 2 D3/2 2 D5/2 830 2 2 251 0 0 1/2 2 3/2 382 1/2 2 161 0 D5/2 2 37 D 5/2 2 0 0 –163 3/2 2 D5/2 Assignment 120 rotational transitions 81 2 –1 Ni Br A D5/2(~37cm ) 58 J=37.5–36.5 Reduced mass ratio L-type doubling 58Ni79Br(35%), 58Ni81Br(34%) X23/2 , A2D5/2 anomaly in spectral pattern L–type doubling 238895 (MHz) 238901 Fortrat Diagram of the NiBr radical ν/J’≒2B J' 60 50 2 X 3/2 2 A D5/2 60 40 50 40 6268 30 6300 n /2 J' 6269 (MHz) 6270 6400 large perturbation in X23/2 – simultaneous analysis needed Deperturbed molecular constants B D H q qD ΔG X23/2 A2D5/2 3176.958(60) 3184.881(60) 1.115(49) 1.613(49) -302(32) 0.0239(10) 448.84(47) 10.4(16) 37cm-1(LIF, fixed) MHz kHz mHz mHz mHz J’ 60 A2D5/2 X23/2 50 40 30 3120 ν/J’≒2B (MHz) ●● ○○ perturbed (obs.)3230 deperturbed (calc.) Summary Features of Sputtering Method Advantage various metals various gasses inexpensive, safe to apply wide possibility of compounds Rather low temperature is sufficient Disadvantage low concentration compared with HT-cell high energy state difficult to observe FeCl, CoF, AuO lowest spin state mmW studies using the sputtering method Sputtering Yield No. of Sputtered Metal Atoms Sputtering Yield = No. of Rare Gas Ions Ag + Ar+: more effective than He+ Higher sputtering yield for atoms with more d-electrons Ar+ 3 Yield at 600 eV Under Ar bombardment + He bombardment Au Pd Cu 2 Ni Al Co Cr Fe 1 Pt Rh Ru Ge Ir Mo Be V Si Hf Zr Ti Nb U Re Os Ta Th W He+ 0 10 20 30 40 50 60 Atomic Number 70 80 90