Download IITC Announces New Session - BtB Marketing Communications

IITC home page:
http://www.ieee.org/conference/iitc
Chris Burke or Garth Miller
BtB Marketing Communications
(919) 872-8172
[email protected] or
[email protected]
For Immediate Release
IITC conference expands with back-end memory session featuring PCM, resistive
RAM, conductive bridge and magnetoresistive memory technologies…
2010 IEEE INTERNATIONAL INTERCONNECT
TECHNOLOGY CONFERENCE SEEKS PAPERS ON
BACK-END MEMORY MATERIALS & TECHNOLOGY
BURLINGAME, CA (January 7, 2010) – A new industry emphasis on 3D memory
technology has prompted the 2010 IEEE International Interconnect Technology
Conference (IITC) to expand the conference’s technical program with a session on
alternative back-end memory technologies. The conference is specifically seeking new
paper submissions on phase-change memories (PCM), resistive RAM (RRAM),
conductive bridge RAM (CB-RAM), magnetoresistive RAM (MRAM) and 3D stacked
NAND flash memories. The deadline for submission of abstracts is Feb. 1, 2010, but a
limited number of late-news papers will be accepted until March 26, 2010.
Scheduled for June 7-9 at the Hyatt Regency San Francisco Airport Hotel in
Burlingame, IITC will be preceded by a day-long Short Course on leading-edge
interconnect technologies on Sunday, June 6. The conference attracts professionals in
semiconductor processing, interconnect design, academia and equipment development.
“The industry is actively pursuing research on monolithically stacked 3D memory
approaches today. These approaches have multiple layers of back-end compatible
memory cells and interconnects stacked on top of each other. IITC, which is a forum for
interconnects and back-end integration, is looking to address this topic.” said Michael
Armacost, IITC 2010 Publicity Chair and Managing Director at Applied Materials, Inc.
“The conference is looking for papers that highlight back-end compatible memory
devices like PCM, RRAM, CB-RAM and MRAM. In addition, papers describing backend compatible select devices, 3D crosspoint memories and 3D NAND flash memories
are sought for this new session.”
Papers from universities, national laboratories, semiconductor manufacturers,
foundries, and equipment/materials suppliers are encouraged. Following a rigorous
review, papers will be selected for either oral presentations or poster presentations during
the exhibition hours. In addition, papers will be selected for a special poster session for
new engineers and students.
IITC 2010 BE Memory Session added/page 2
IITC’s traditional U.S. venue in Burlingame is now one of three international
locations for this important technology conference, which rotates among them annually.
In 2009, IITC was held in Sapporo, Japan, while the 2011 conference will take place in
Europe.
The IITC 2010 Call for Papers and paper-submission requirements can be found
on the conference website, http://www.ieee.org/conference/iitc. For additional
information and inquiries, interested persons may contact Wendy Walker at Widerkehr &
Associates, 19803 Laurel Valley Place, Montgomery Village, MD 20886 USA; tel. +1301-527-0900 ext 3; fax. +1-301-527-0994; e-mail [email protected]
About the IEEE
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