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CONFERENCE SCIENTIFIC PROGRAM Sunday, September 12 18:30-20:00 Reception Royal Hall (3F) Monday, September 13 9:00- 9:20 Royal Hall (3F) Opening Address Y. Yasuda Nagoya Univ., Japan Y. Sawada Tohoku Univ., Japan Session A: Opening Session 9:20- 9:50 A-1 Self-assembling Si/SiGeC and Si/SiGe nanostructures for light emitters (Invited) and tunneling diodes K. Eberl, O. G. Schmidt, and R. Duschl Max-Planck-Inst., Germany 9:50-10:20 A-2 High-speed device applications of SiGe (Invited) K. Washio Hitachi Ltd., Japan 10:20-10:40 Break Session B: Nanostructures 10:40-11:00 B-1 Step bunching and correlated SiGe nanostructures on (113)Si K. Brunner, J. Zhu, and G. Abstreiter, O. Kienzle*, and F. Ernst* TU München, Germany, *Max-Planck-Inst., Germany 11:00-11:20 B-2 Strain-driven modification of the Ge/Si(001) growth mode in stacked layers: A ways to produce Ge dots of equal size in all layers V. Le Thanh, V. Yam, P. Boucaud, Y. Zheng, and D. Bouchier Univ. Paris-Sud., France 11:20-11:40 B-3 Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates G. Jin, J. L. Liu, Y. H. Luo, and K. L. Wang UCLA, USA 11:40-12:00 B-4 Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda, and M. Hirose Hiroshima Univ., Japan 12:00-13:30 Lunch Break Monday, September 13 13:30-14:00 B-5 (Invited) Nanostructures in silicon devices I. Eisele, and W. Hansch Univ. der Bundeswehr München, Germany 14:00-14:20 B-6 Nanometer-scale Si-selective epitaxial growth using ultrathin SiO2 mask N. Miyata, H. Watanabe, and M. Ichikawa JRCAT-ATP, Japan 14:20-14:40 B-7 Coulomb charging effect of holes in self-assembled Ge quantum dots studied by deep level transient spectroscopy S. Zhang, F. Lu, Z. Jiang, J. Qin and X. Wang Fudan Univ., China 14:40-15:00 B-8 C-V Study of single-crystalline Si dots on ultrathin buried SiO2 formed by nano-LOCOS process Y. Ishikawa, M. Kosugi, M. Kumezawa, T. Tsuchiya*, and M. Tabe Shizuoka Univ., Japan, *Shimane Univ., Japan 15:00-15:20 B-9 Analysis of single Si atoms deposited on the Si(111)7x7 surface H. Uchida, S. Watanabe*, M. Mase, H. Kuramochi**, and M. Aono** Toyohashi Univ. of Technol., Japan, *The Univ. of Tokyo, Japan, **Osaka Univ., Japan 15:20-15:40 B-10 Step rearrangement on the Si(001) surface during diborane supply K. Fujita, and M. Ichikawa* Oki Electric Industry Co., Ltd., Japan, *JRCAT-ATP, Japan 15:40-16:00 Break Session C: Surface-Related Phenomena 16:00-16:20 C-1 New kinetic growth instabilities in Si(001) homoepitaxy C. Schelling, G. Springholz, and F. Schäffler Johannes Kepler Univ. Linz, Austria 16:20-16:40 C-2 RHEED analysis of twinned homoepitaxial layers grown in Si(111) H. Hibino, T. Kawamura*, and T. Ogino NTT Basic Research Labs., Japan, *Yamanashi Univ., Japan 16:40-17:00 C-3 The formation of the silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium J. Schulze, T. Stimpel, T. Sulima, I. Eisele, Z. Kovats*, T. H. Metzger*, and R. Paniago* Univ. der Bundeswehr München, Germany, *Ludwig Maximilians Univ., Germany 17:00-17:20 C-4 Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100) M. Shinohara, M. Niwano, Y. Neo, and K. Yokoo Tohoku Univ., Japan 17:20-17:40 C-5 Comparative study on the growth kinetics of Si-GSMBE between silane and disilane as observed with MIR-FTIR Y. Tsukidate, and M. Suemitsu Tohoku Univ., Japan 17:40-18:00 C-6 In situ observation of the diamond C(001) surface during H 2 adsorption by time-resolved ultraviolet photoelectron spectroscopy Y. Takakuwa, M. Asano, T. Yasuda, T. Hikita, R. Kosugi, S. Kono, D. Takeuchi*, and H. Okushi* Tohoku Univ., Japan, *Electrotechnical Lab., Japan 3 × 3 -B Tuesday, September 14 Royal Hall (3F) Session D: Thin Film Growth 9:00-9:30 D-1 (Invited) Diffusion mechanism of Ge atoms on H/Si(100)-(2xl) surface J. Nara, and T. Ohno National Research Inst. for Metals, Japan 9:30-9:50 D-2 Surface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering K. Sumitomo, K. Shiraishi, Y. Kobayashi, T. Ito*, and T. Ogino NTT Basic Research Labs., Japan, *NTT Photonics Labs., Japan 9:50-10:10 D-3 Theoretical and experimental studies on the microscopic origin of the Ge segregation on Si(001) surfaces: Crucial effect of configurational entropy K. Shiraishi, K. Sumitomo, Y. Yoshimoto*, H. Kageshima, Y. Kobayashi, T. Ito**, T. Ogino, and M. Tsukada* NTT Basic Research Labs., Japan, *The Univ. of Tokyo, Japan, **NTT Photonics Labs., Japan 10:10-10:30 D-4 Nucleation and growth of Ge on Si(111) in solid phase epitaxy I. Suzumura, M. Okada, A. Muto, Y. Torige, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda Nagoya Univ., Japan 10:30-10:50 Break 10:50-11:10 D-5 Experimental study of a surfactant-assisted SiGe graded layer and symmetrically strained Si/Ge superlattices for thermoelectric applications J. L. Liu, and K. L. Wang UCLA, USA 11:10-11:30 D-6 Formation of relaxed SiGe films on Si by selective epitaxial growth K. Kawaguchi, N. Usami, and Y. Shiraki The Univ. of Tokyo, Japan 11:30-11:50 D-7 Epitaxial growth of heavily B-doped SiGe films by rapid thermal chemical vapor deposition M. Okada, H. Kamioka*, H. Matsuo*, Y. Fukuda*, S. Zaima, S. Ohgawara*, and Y. Yasuda Nagoya Univ., Japan, *Canon Sales Co., Inc., Japan 11:50-12:10 D-8 Effects and model of Al predeposition layer on epitaxial silicon growth onto Al2O3/Si(111) substrates M. Ishida, Y. Jung, H. Miura, Y. Koji, K. Sawada, M. Yoshimoto*, K. Mizuno*, T. Miyahara*, and H. Maruta* Toyohashi Univ. of Technol., Japan, *Tokyo Inst. of Technol., Japan 12:10-13:30 Lunch Break Tuesday, September 14 Session E: Process Technology 13:30-14:00 E-1 (Invited) Polycrystalline-SiGe applications in Si CMOS technology K. C. Saraswat Stanford Univ., USA 14:00-14:20 E-2 Ge-induced enhancement of solid-phase crystallization of Si on SiO2 S. Yamaguchi, S. K. Park, N. Sugii, K. Nakagawa, and M. Miyao Hitachi, Ltd., Japan 14:20-14:40 E-3 Formation of strained silicon layer on thin relaxed SiGe/SiO2/Si structure using SIMOX technology N. Sugiyama, T. Mizuno, S. Takagi, M. Koike, and A. Kurobe Toshiba Corp., Japan 14:40-15:00 E-4 Carrier activation process in As+ implanted relaxed Si1-xGex alloys T. Irisawa, T. Ueno, S. Yamaguchi*, K. Nakagawa*, M. Miyao*, and Y. Shiraki The Univ. of Tokyo, Japan, *Hitachi Ltd., Japan 15:00-15:20 15:20-15:50 15:50-16:10 Break E-5 (Invited) E-6 Atomic layer doping of SiGe-fundamentals and device applications B. Tillack, B. Heinemann, and D. Knoll Inst. for Semiconductor Phys., Germany Ultra-shallow junction technology by rapid thermal annealing from lightly boron adsorbed layer Y. H. Song, K. S. Kim, H. Kurino, and M. Koyanagi Tohoku Univ., Japan 16:10-18:00 POSTER SESSION I 19:30-21:30 RUMP SESSION I Royal Hall (3F) Silicon Nanostructures -How to Control and What to ExpectRecently, Si nanometer-scale structures have been extensively studied, because they are recognized to be important in developing new Si devices such as single-electron devices and photonic devices. In this Rump Session, focusing primarily on dots and wires of Si (and group IV materials), two key issues will be discussed: 1) what kinds of device-functions can be created by dots or wires? and 2) how far "will" and "must" fabrication technologies be advanced? Organizers: M. Tabe (Shizuoka Univ.) K. Fujita (Oki) Panelists (tentative): I. Eisele (Univ. der Bundeswehr Muenchen, Germany) M. Ichikawa (JRCAT-ATP, Japan) S. Matsui (Himeji Inst. of Technol., Japan) S. Miyazaki (Hiroshima Univ., Japan) K. Shiraishi (NTT Basic Research Labs, Japan) K. L. Wang (UCLA, USA) Wednesday, September 15 Royal Hall (3F) Session F: Silicide/SiC 9:00-9:30 F-1 Epitaxial silicide interfaces in microelectronics (Invited) R. T. Tung and S. Ohmi Lucent Technologies Bell Labs., USA 9:30-9:50 9:50-10:20 F-2 F-3 (Invited) 10:20-10:40 F-4 10:40-11:00 Growth of -FeSi2 and FeSi layers by reactive deposition using Sb-related intermetallic compounds T. Koga, A. Bright, T. Suzuki, K. Shimada, H. Tatsuoka, and H. Kuwabara Shizuoka Univ., Japan SiC/Si heteroepitaxial growth M. Kitabatake Matsushita Electric Industrial Co., Ltd., Japan Initial stage of SiC film growth on Si(111)7x7 and Si(100)2x1 surfaces using C60 as a precursor S. Suto, C. -W. Hu, F. Sato, M. Tanaka, and A. Kasuya Tohoku Univ., Japan Break Session G: Oxidation/Nitridation 11:00-11:20 G-1 A study on the local bonding structures of oxidized Si(111) surfaces by HREELS K. Sato, Y. Nakagawa, H. Ikeda, S. Zaima, and Y. Yasuda Nagoya Univ., Japan 11:20-11:40 G-2 Real-time monitoring of Si thermal oxidation by a combined method of RHEED and AES F. Ishida, R. Kosugi, T. Abukawa, and Y. Takakuwa Tohoku Univ., Japan 11:40-12:00 G-3 Local strain measurement in patterned Si with a novel x-ray diffraction technique S. Lagomarsino, S. Di Fonzo*, W. Jark*, C. Giannini**, L. De Caro**, and A. Cedola IESS-CNR-V, Italy, *Sincrotrone Trieste, Italy, **PASTIS-CNRSM, Italy 12:00-12:20 G-4 Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces D. Matsushita, A. Sakai, S. Zaima, and Y. Yasuda Nagoya Univ., Japan 13:30-18:00 EXCURSION 19:00-21:00 BANQUET Royal Hall (3F) Thursday, September 16 Royal Hall (3F) Session H: Transport Properties I 9:00-9:30 H-1 (Invited) Alloy and other scattering mechanisms in Si/SiGe heterostructures for field effect transistors T. E. Whall The Univ. of Warwick, UK 9:30-9:50 H-2 ESR investigations of modulation-doped Si/SiGe quantum wells N. Sandersfeld*, W. Jantsch*, Z. Wilamowski*,**, and F. Schäffler* *Johannes Kepler Univ. Linz, Austria, **Polish Academy of Sciences, Poland 9:50-10:10 H-3 Schottky gating high mobility Si-Si1-xGex 2D electron systems R. B. Dunford, N. Griffin, D. J. Paul, M. Pepper, D. J. Robbins*, A. C. Churchill*, and W. Y. Leong* Univ. of Cambridge, UK, *Defence Evaluation and Research Agency, UK 10:10-10:30 H-4 Low temperature buffer growth for modulation doped GeSi/Ge/GeSi heterostructures with high hole mobility T. Ueno, T. Irisawa, and Y. Shiraki The Univ. of Tokyo, Japan 10:30-10:50 Break Session I: Electronic Devices 10:50-11:10 I-1 Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs K. Oda, E. Ohue, M. Tanabe*, H. Shimamoto*, and K. Washio Hitachi Ltd., Japan, *Hitachi Device Engineering Co. Ltd., Japan 11:10-11:30 I-2 Interface-controlled Si/SiGe heterostructures for ultrahigh-mobility FETs N. Sugii, K. Nakagawa, S. Yamaguchi, S. Park, and M. Miyao Hitachi Ltd., Japan 11:30-11:50 I-3 Characteristic of Schottky source/drain SOI-MOSFET depending on the barrier height of silicide contacts T. Asano, Y. Ochiai, M. Nishisaka, and T. Shikano Kyushu Inst. of Technol., Japan 11:50-13:30 Lunch Break Thursday, September 16 13:30-14:00 I-4 Performance enhancements in strained Si/relaxed Si1-xGex MOSFETs (Invited) J. L. Hoyt, K. Rim and J. F. Gibbons Stanford Univ., USA 14:00-14:20 I-5 Doped vs. undoped SiGeC layers in sub-100nm vertical p-channel MOSFET's M. Yang, and J. C. Sturm Princeton Univ., USA 14:20-14:40 I-6 Growth, processing and characterization of Si/Si0.64Ge0.36/Si heterojunction p-MOSFETs with thin silicon caps G. Braithwaite, T. J. Grasby, M. J. Palmer, M. J. Prest, C. P. Parry, P. J. Phillips, E. H. C. Parker, T. E. Whall, A. M. Waite**, A. G. R. Evans*, S. Roy**, and A. Asenov** Univ. of Warwick, UK, *Univ. of Southampton, UK, **Univ. of Glasgow, UK 14:40-15:00 Break Late News 15:00-15:15 LN-3 Step-flow epitaxy at high temperatures on ultra-flat Si(111) P. Finnie, and Y. Homma NTT Basic Research Labs., Japan 15:15-15:30 LN-9 Creation of SiGe-on-insulator substrate by using low-energy oxygen implantation to MBE-grown SiGe alloys Y. Ishikawa, N. Shibata, and S. Fukatsu* Japan Fine Ceramics Center, Japan, *The Univ. of Tokyo, Japan 15:30-15:45 LN-1 Strained Si1-xGex graded channel PMOSFET grown by UHV/CVD C. Y. Su*, S. L. Wu**, S. J. Chang*,***, and L. P. Chen**** *National Cheng Kung Univ., Taiwan, **Cheng Shiu Inst. of Technol., Taiwan, ***The Univ. of Tokyo, Japan, ****National Nano Device Lab., Taiwan 15:45-16:00 LN-6 A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems W. Y. Leong, A. C. Churchill, D. J. Robbins, J. L. Glasper, and G. M. Williams Defence Evaluation and Research Agency, UK 16:00-18:00 POSTER SESSION II 19:30-21:30 RUMP SESSION II Royal Hall (3F) Post Silicon MOSFETs -Breakthrough with HeterostructuresDevices with heterostructures are eagerly studied as candidates for post Silicon MOSFETs and Bipolar Transistors. In this Rump Session, we would like to focus on SiGe related devices, and especially to discuss advantages (or disadvantages) of these devices. Following device structures will be discussed, FETs with (1) SiGe source/drain, (2) SiGe gate electrode, (3) SiGe channel, and (4) Bipolar Transistors with SiGe base. Organizers: K. Morita (Matsushita) K. Nakagawa (Hitachi) T. Tatsumi (NEC) Panelists (tentative): D. Knoll (Inst. for Semiconductor Phys., Germany) J. Hoyt (Stanford Univ., USA) K. C. Saraswat (Stanford Univ., USA) N. Sugiyama (Toshiba Corp., Japan) T. Tatsumi (NEC Corp, Japan) T. E. Whall (The Univ. of Warwick, UK) Friday, September 17 Royal Hall (3F) Session J: Transport Properties II 9:00-9:30 J-1 (Invited) 9:30-9:50 J-2 Comparison of SiGe and SiGe:C heterojunction bipolar transistors D. Knoll, B. Heinemann, K. -E. Ehwald, B. Tillack, P. Schley, and H. J. Osten Inst. for Semiconductor Phys., Germany 9:50-10:10 J-3 Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers B. Heinemann, D. Knoll, G. G. Fischer, P. Schley, and H. J. Osten Inst. for Semiconductor Phys., Germany 10:10-10:30 J-4 C introduced Si1-xGex/Si resonant tunneling diodes epitaxially grown using low-temperature low-pressure CVD P. Han, M. Sakuraba, Y. Jeong, T. Matsuura, and J. Murota Tohoku Univ., Japan 10:30-10:50 High-speed transport in Si/SiGeC heterostructures F. Schäffler Univ. Linz, Austria Break Session K: Optical Properties and Devices 10:50-11:20 K-1 Self-organized and self registered Ge dots on Si and their potential (Invited) applications K. L. Wang UCLA, USA 11:20-11:40 K-2 Band ordering of the pseudomorphic Si1-xGex/Si heterostructure: The fundamental role of excitons C. Penn, S. Glutsch*, G. Bauer, and F. Schäffler Univ. Linz, Austria, *Univ. Jena, Germany 11:40-12:00 K-3 Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, and Ch. Buchal* TU München, Germany, *Forschungszentrum Jülich GmbH, Germany 12:00-12:20 K-4 Field-enhanced stokes shifts in strained Si1-yCy/Si(001) symmetric quantum wells Y. Sugawara, S. Fukatsu, K. Brunner*, and K. Eberl* The Univ. of Tokyo, Japan, *Max-Planck-Inst., Germany 12:20-13:30 Lunch Break Friday, September 17 13:30-13:50 K-5 Growth and characterization of 70Gen/74Gen isotope superlattices K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi*, N. Usami**, Y. Shiraki**, and E. E. Haller*** Keio Univ. Japan, *Osaska Univ., Japan, **The Univ. of Tokyo, Japan, ***UC Berkeley and Lawrence Berkeley National Labs., US 13:50-14:10 K-6 Structural and optical properties of Si/Si1-xGex wires Y. Zhuang, C. Schelling, J. Stangl, C. Penn, S. Senz*, F. Schäffler, A. Daniel, U. Pietsch**, and G. Bauer Univ. Linz, Austria, *Max-Planck-Inst., Germany, **Univ. Potsdam, Germany 14:10-14:30 K-7 1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy W. Ni, C. Du, Kenneth, B. Joelsson, F. Duteil, and G. V. Hansson Linköping Univ., Sweden 14:30-14:50 K-8 Y-branch 1.3/1.55 µm wavelength multi/demultiplexer based on the plasma dispersion effect B. Li, Z. Jiang, X. Wang, G. Li*, and E. Liu* Fudan Univ., China, *Xi'an Jiaotong Univ., China 14:50-15:00 Closing Remarks Y. Shiraki The Univ. of Tokyo, Japan POSTER SESSION I 16:10-18:00, Tuesday, September 14 PI-1 A novel measurement method of segregating adlayers in MBE M. Oehme, M. Bauer, T. Grasby*, and E. Kasper Univ. Stuttgart, Germany, *Univ. of Warwick, UK PI-2 Micro-roughness control of the Si1-xGex surfaces treated with buffered hydrofluoric acid S. Ishida, T. Osada, M. Miyamoto, M. Sakuraba*, T. Matsuura*, and J. Murota* Morita Chemical Industries Co., Ltd., Japan, *Tohoku Univ., Japan PI-3 Dynamics of surface phase separation on patterned substrates by molecular beam epitaxy Y. Enomoto Nagoya Inst. of Technol., Japan PI-4 Ge thin film growth on Si(111) surface using hydrogen surfactant T. Fujino, T. Fuse, J. -T. Ryu, K. Inudzuka, T. Nakano, K. Goto, Y. Yamazaki, M. Katayama, and K. Oura Osaka Univ., Japan PI-5 RHEED studies of nucleation of Ge islands on Si(001) A. I. Nikiforov, V. A. Cherepanov*, V. A. Markov, and O. P. Pchelyakov Inst. of Semiconductor Phys., Russia, *Novosibirsk State Univ., Russia PI-6 Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer H. Takamiya, N. Usami*, T. Hattori, and Y. Shiraki* Musashi Inst. of Technol., Japan, *The Univ. of Tokyo, Japan PI-7 Positioning of self-assembling Ge islands on Si(111) mesas using atomic steps H. Omi, and T. Ogino NTT Basic Research Lab., Japan PI-8 Boron-mediated growth of Ge quantum dot on Si(100) substrate Z. M. Jiang, X. F. Zhou, B. Shi, D. Z. Hu, and X. Wang Fudan Univ., China PI-9 Growth temperature dependence on the formation of carbon-induced Ge quantum dots Y. J. Kim, S. H. Ihm, J. H. Seok, C. H Lee, X. Y. Zhu, Y. H. Lee, and E. -K. Suh Chonbuk National Univ. PI-10 Strain and island formation in Ge/Si(111) F. Rosei, N. Motta, E. Placidi, and A. Sgarlata Fisica Univ. di Roma Tor Vergata, Italy PI-11 Characterization of Si-Ge-C thin films by MeV ion scattering and x-ray diffraction M. Nagaki, T. Narusawa, A. Hiraki, T. Saitoh*, and M. Kubo* Kochi Univ., Japan, *Matsushita Electric Industrial Co. Ltd., Japan PI-12 Alternatives to thick MBE-grown relaxed SiGe buffers T. Hackbarth, H. -J. Herzog, M. Zeuner, H. Kibbel, G. Hoeck, E. A. Fitzgerald*, M. Bulsara**, C. Rosenblad***, H. v. Kaenel***, S. Mantl****, and B. Hollaender**** Daimler Chrysler AG, Germany, *Massachusetts Inst. of Technol., USA, **Amber Wave, USA, ***Lab. fuer Festkoerperphysik, Switzerland, ****ISI-IT, Germany POSTER SESSION I PI-13 Growth and mechanical properties of GeSi bulk crystals I. Yonenaga Tohoku Univ., Japan PI-14 Relaxed SiGe buffers with thicknesses below 0.1µm M. Bauer, K. Lyutovich, M. Oehme, E. Kasper, H. -J. Herzog*, and F. Ernst** Univ. Stuttgart, Germany, *Daimler Chrysler Research and Technol. Center Ulm, Germany, **Max-Planck-Inst., Germany PI-15 Synthesis of SiGeC layers by ion implantation of Ge and C H. Kurata, M. Ohfuti, and T. Futatsugi Fujitsu Lab. Ltd., Japan PI-16 Dependence of film quality on type of 60° misfit dislocations in GeSi on Si(001) E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, L. V. Sokolov, A. K. Gutakovsky, V. I. Mashanov, and M. A. Revenko Inst. of Semiconductor Phys., Russia PI-17 Depth profiling of Ge in three-period Si/SiGe multilayers grown by molecular beam epitaxy using medium-energy coaxial impact-collision ion scattering spectroscopy T. Kobayashi*, C. F. McConville**, G. Dorenbos*, M. Iwaki*, and M. Aono*,*** *RIKEN, Japan, **Univ. of Warwick, UK, ***Osaka Univ., Japan PI-18 Spectro-ellipsometric characterization of thin Si1-xGex films grown on Si(100) H. Akazawa NTT Telecommunications Energy Labs., Japan PI-19 Residual strain and surface roughness of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrate C. Tatsuyama, T. Asano, T. Nakao, H. Matada, T. Tambo, and H. Ueba Toyama Univ., Japan PI-20 Characterization of heterostructures with x-ray film interferometer E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, L. V. Sokolov, A. A. Fedorov, O. P. Pchelyakov, A. I. Nikiforov, and S. I. Romanov Inst. of Semiconductor Phys., Russia PI-21 Bimodal size distribution of Ge islands grown on Si(001) by molecular beam epitaxy N. Ninomiya N. Happo, M. Fujiwara, M. Iwamatsu, and K. Horii Hiroshima City Univ., Japan PI-22 Strain near SiO2-Si interface revealed by x-ray diffraction intensity enhancement T. Emoto, K. Akimoto, Y. Ishikawa, A. Ichimiya, and A. Tanikawa* Nagoya Univ., Japan, *NEC Corp., Japan PI-23 Growth of Mn doped epitaxial -FeSi2 films on Si(001) substrates by reactive deposition epitaxy K. Takakura, T. Suemasu, and F. Hasegawa Univ. of Tsukuba, Japan PI-24 Growth of epitaxial CoSi2 for contacts of ultra-thin SOI MOSFETs K. Sakamoto, T. Maeda, and M. Hasegawa Electrotechnical Lab., Japan PI-25 Effect of Ti evaporation on high temperature Si substrate on TiSi2 formation K. Ezoe, T. Yamamoto, K. Ishii, and S. Matsumoto Keio Univ., Japan PI-26 Gas-source MBE of SiC/Si using monomethylsilane POSTER SESSION I H. Nakazawa, M. Suemitsu, and S. Asami* Tohoku Univ., Japan, *Sendai National College of Technol., Japan PI-27 Nucleation and growth kinetics of 3C-SiC on Si(001) during carbonization R. Kosugi, M. Shimomura, T. Abukawa, Y. Fukuda*, S. Kono, and Y. Takakuwa Tohoku Univ., Japan, *Shizuoka Univ., Japan PI-28 Heteroepitaxial growth of SrO on hydrogen-terminated Si(001) surface H. Asaoka, H. Yamamoto, K. Saiki*, and A. Koma* Japan Atomic Energy Research Inst., Japan, *The Univ. of Tokyo, Japan PI-29 Surfaces and interfaces of heteroepitaxially grown yttria-stabilized zirconia (YSZ) on (100), (110), (111) Si substrates by reactive sputtering T. Hata, K. Sasaki, Y. Ichikawa*, M. Nagashima, and K. Sasaki Kanazawa Univ., Japan, *RITE, Japan LN-2 Thermal decomposition pathway of germanium and silicon oxides: Observation of a distinct difference K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino NTT Basic Research Labs., Japan LN-7 Formation of size controlled Ge nanocrystals in SiO2 matrix by ion implantation and annealing M. Yamamoto*,**, T. Koshikawa**, T. Yasue**, H. Harima***, and K. Kajiyama* *Ion Engineering Research Inst., Japan, **Osaka Electro-Communication Univ., Japan, ***Osaka Univ., Japan LN-8 Non-equilibrium molecular orbital calculations of Si/SiO2 and Si/SiOxNy interfaces J. Schulte, J. Ushio*, and T. Maruizumi* Univ. of Technol., Australia, *Hitachi Ltd., Japan LN-5 Low-temperature growth of In Situ phosphorus-doped silicon films: two step growth utilizing amorphous silicon buffers H.-S. Kim, K.-H. Shim, J.-Y. Lee*, J.-Y. Kang, M.-K. Song, and D. S. Ma Electronics and Telecommunications Research Inst., Korea, *Korea Advanced Inst. of Science and Technol., Korea POSTER SESSION II 16:00-18:00, Thursday, September 16 PII-1 Diffusion and segregation of impurities from doped Si1-xGex films into silicon S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba*, T. Matsuura*, and J. Murota* Tokyo Inst. of Polytechnics, Japan, *Tohoku Univ., Japan PII-2 Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda*, M. Fujiu*, T. Takatsuka*, A. Moriya*, M. Sakuraba*, T. Matsuura*, and J. Murota* Nippon Sanso Corp., Japan, *Tohoku Univ., Japan PII-3 Enhancement of thermal diffusion of delta-doped Sb in SiGe K. Nakagawa, N. Sugii, S. Yamaguchi, and M. Miyao Hitachi, Ltd., Japan PII-4 Approaches to the optimization of SS-MBE grown vertical architecture in SiGe p-MOSFET devices for CMOS T. G. Grasby , C. P. Parry, A. D. Lambert, B. M. McGregor, G. M. Braithwaite, P. J. Phillips, T. E. Whall, and E. H. C. Parker Univ. of Warwick, UK PII-5 Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si2H6 and PH3 F. Hirose Mitsubishi Heavy Industries Ltd., Japan PII-6 Heteroepitaxial growth of SiGe films and heavily B doping by ion beam sputtering K. Sasaki, Y. Nabetani, H. Miyashita, and T. Hata Kanazawa Univ., Japan PII-7 ULPCVD/GSMBE of SiGe for high mobility transport device structures N. J. Woods, J. Zhang, and D. Paul* Imperial College of Science, UK, *Univ. of Cambridge, UK POSTER SESSION II PII-8 Si/SiGe n-type inverted modulation-doping using ion implantation A. Ahmed, R. B. Dunford, D. J. Paul, M. Pepper, A. C. Churchill*, D. J. Robbins*, and W. Y. Leong* Univ. of Cambridge, UK, *Defence Evaluation Research Agency, UK PII-9 Transport properties of the two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities T. Hatakeyama, T. Tezuka, N. Sugiyama, and A. Kurobe Toshiba R and D Center, Japan PII-10 Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures S. Madhavi, and V. Venkataraman Indian Inst. of Science, India PII-11 Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs G. Wöhl, V. Dudek*, M. Graf*, H. Kibbel**, H. -J. Herzog**, and M. Klose*** Univ. Stuttgart, Germany, *Inst. f. Mikroelectronik Stuttgart, Germany, **Daimler Chrysler-AG, Germany, ***Inst. f. Techn. Physik, Germany PII-12 Structural characterization of Si1-xGex/Si relaxed virtual substrates and strained superlattices grown by chemical vapor deposition J. -L. Lazzari, S. Bozzo, B. Hollaender*, S. Mantl*, A. Ronda, C. Coudreau, F. A. D’avitaya, and J. Derrien CRMC2-CNRS, France, *Forschungszentrum Juelich GmbH, Germany PII-13 Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs T. Tezuka, A. Kurobe, N. Sugiyama, and S. Takagi Toshiba Corp., Japan PII-14 Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs T. Tsuchiya, K. Goto*, M. Sakuraba*, T. Matsuura*, and J. Murota* Shimane Univ., Japan, *Tohoku Univ., Japan PII-15 Optimization of breakdown behaviour and on-state current in MBE grown vertical POSTER SESSION II MOS-devices with local channel doping C. Fink, K. G. Anil, W. Hansch, J. Schulze, and I. Eisele Univ. der Bundeswehr München, Germany PII-16 Si/SiGe heterostructure field effect transistors fabricated using CMOS processing D. J. Paul, R. B. Dunford, M. Pepper, B. P. Coonan*, N. Griffin*, G. Redmond*, G. Crean*, B. Holländer**, and S. Mantl** Univ. of Cambridge, UK, *Univ. College Cork, Ireland, **ISI-IT Forschungszentrum Jülich, Germany PII-17 Realization of silicon Esaki tunneling transistor W. Hansch, C. Fink, J. Schulze, and I. Eisele Univ. der Bundeswehr München, Germany PII-18 Si/SiGe double barrier resonant tunneling structures G. Dehlinger, U. Gennser, D. Grützmacher, T. Ihn*, and K. Ensslin* Paul Scherrer Inst., Switzerland, *ETH Zürich, Switzerland PII-19 Negative resistance SiGe VCOs at 4.5-GHz T. Leppänen, T. Jarva, T. Teppo, T. Palonen, A. Ruotsalainen, and E. Ristolainen Tampere Univ. of Technol., Finland PII-20 In-situ scanning tunneling microscopy observation of pyramidal Si nanocrystals selectively grown on Si(001) windows in ultrathin SiO2 films M. Shibata, Y. Nitta, K. Fujita, and M. Ishikawa JRCAT-ATP, Japan PII-21 Formation process and ordering of self-assembled Ge islands M. Miura, J. M. Hartmann*, J. Zhang**, B. Joyce**, and Y. Shiraki The Univ. of Tokyo, Japan, *Commissariat A L`energie Atomique, France, **Imperial College of Science Techonol. and Medicine, UK PII-22 Optical investigation of modified Stranski-Krastanov growth mode in stacking of self-assembled Ge islands N. Usami, and Y. Shiraki The Univ. of Tokyo, Japan POSTER SESSION II PII-23 Realization of a SiGe patterned substrate using surface periodic modulations A. Ronda, M. Abdallah, J. M. Gay, L. Lapena, and I. Berbezier CRMC2-CNRS, France PII-24 Structural and optical characterization of SiGe/Si quantum structures I. Berbezier, M. Abdallah, A. Ronda, M. Halsall*, A. Souifi**, and G. Bremond** CRMC2-CNRS, France, *UMIST, UK, **UMR-CNRS, France PII-25 Anomalous surface absorption band at 1.2eV in Si1-xGex alloy-based structures Y. Kishimoto, K. Kawamoto, and S. Fukatsu The Univ. of Tokyo, Japan PII-26 Peculiarities and advantages of optically active Si:Er and SixGe1-x layers grown by the sublimation MBE method M. V. Stepikhova, B. A. Andreev, V. B. Shmagin, Z. F. Krasil’nik, V. P. Kuznetsov*, V. G. Shengurov*, S. P. Svetlov*, W. Jantsch**, L. Palmetshofer**, and H. Ellmer** Inst. for Phys. of Microstructures RAS, Russia, *Nizhny Novgorod State Univ, Russia, **Univ. Linz, Austria PII-27 Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD T. P. Sidiki, S. Christiansen*, M. Albrecht*, W. B. de Boer**, C. Ferrari***, and C. M. S. Torres Bergische Univ.-GH Wuppertal, Germany, *Univ. Erlangen, Germany, **Philips Research Lab., The Netherlands, ***CNR Maspec Inst., Italy PII-28 Metal-semiconductor-metal photodetector for 1.3 and 1.55 µm based on relaxed Ge film on silicon substrate M. Fiordelisi, R. Calarco, L. Colace*, G. Masini*, F. Scarinci, G. Asssanto*, F. Galluzzi*, and S. Lagomarsino IESS-CNR- V. Cineto Ramano, Italy, *Univ. degli Studi “Roma Tre”, Italy LN-4 Optical investigation of self-organized Ge/Si quantum dots grown at low temperature H. H. Cheng, C. Y. Chia*, C. C. Chen, Y. H. Peng, C. H. Kuan, X. J. Guo**, and V. A. Markov** National Taiwan Univ., Taiwan, *Taiwan Noraml Univ., Taiwan, **National Tsing-Hua Univ., Taiwan, ***Tohoku Univ., Japan