Download Session A: Opening Session

CONFERENCE SCIENTIFIC PROGRAM
Sunday, September 12
18:30-20:00
Reception Royal Hall (3F)
Monday, September 13
9:00- 9:20
Royal Hall (3F)
Opening Address
Y. Yasuda
Nagoya Univ., Japan
Y. Sawada
Tohoku Univ., Japan
Session A: Opening Session
9:20- 9:50
A-1
Self-assembling Si/SiGeC and Si/SiGe nanostructures for light emitters
(Invited) and tunneling diodes
K. Eberl, O. G. Schmidt, and R. Duschl
Max-Planck-Inst., Germany
9:50-10:20
A-2
High-speed device applications of SiGe
(Invited) K. Washio
Hitachi Ltd., Japan
10:20-10:40
Break
Session B: Nanostructures
10:40-11:00
B-1
Step bunching and correlated SiGe nanostructures on (113)Si
K. Brunner, J. Zhu, and G. Abstreiter, O. Kienzle*, and F. Ernst*
TU München, Germany, *Max-Planck-Inst., Germany
11:00-11:20
B-2
Strain-driven modification of the Ge/Si(001) growth mode in stacked layers: A
ways to produce Ge dots of equal size in all layers
V. Le Thanh, V. Yam, P. Boucaud, Y. Zheng, and D. Bouchier
Univ. Paris-Sud., France
11:20-11:40
B-3
Control of the arrangement of self-organized Ge dots on patterned Si(001)
substrates
G. Jin, J. L. Liu, Y. H. Luo, and K. L. Wang
UCLA, USA
11:40-12:00
B-4
Control of self-assembling formation of nanometer silicon dots by low
pressure chemical vapor deposition
S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda, and M. Hirose
Hiroshima Univ., Japan
12:00-13:30
Lunch Break
Monday, September 13
13:30-14:00
B-5
(Invited)
Nanostructures in silicon devices
I. Eisele, and W. Hansch
Univ. der Bundeswehr München, Germany
14:00-14:20
B-6
Nanometer-scale Si-selective epitaxial growth using ultrathin SiO2 mask
N. Miyata, H. Watanabe, and M. Ichikawa
JRCAT-ATP, Japan
14:20-14:40
B-7
Coulomb charging effect of holes in self-assembled Ge quantum dots studied
by deep level transient spectroscopy
S. Zhang, F. Lu, Z. Jiang, J. Qin and X. Wang
Fudan Univ., China
14:40-15:00
B-8
C-V Study of single-crystalline Si dots on ultrathin buried SiO2 formed by
nano-LOCOS process
Y. Ishikawa, M. Kosugi, M. Kumezawa, T. Tsuchiya*, and M. Tabe
Shizuoka Univ., Japan, *Shimane Univ., Japan
15:00-15:20
B-9
Analysis of single Si atoms deposited on the Si(111)7x7 surface
H. Uchida, S. Watanabe*, M. Mase, H. Kuramochi**, and M. Aono**
Toyohashi Univ. of Technol., Japan, *The Univ. of Tokyo, Japan, **Osaka Univ.,
Japan
15:20-15:40
B-10
Step rearrangement on the Si(001) surface during diborane supply
K. Fujita, and M. Ichikawa*
Oki Electric Industry Co., Ltd., Japan, *JRCAT-ATP, Japan
15:40-16:00
Break
Session C: Surface-Related Phenomena
16:00-16:20
C-1
New kinetic growth instabilities in Si(001) homoepitaxy
C. Schelling, G. Springholz, and F. Schäffler
Johannes Kepler Univ. Linz, Austria
16:20-16:40
C-2
RHEED analysis of twinned homoepitaxial layers grown in Si(111)
H. Hibino, T. Kawamura*, and T. Ogino
NTT Basic Research Labs., Japan, *Yamanashi Univ., Japan
16:40-17:00
C-3
The formation of the silicon (111) boron surface phases and their influence on
the epitaxial growth of silicon and germanium
J. Schulze, T. Stimpel, T. Sulima, I. Eisele, Z. Kovats*, T. H. Metzger*, and R.
Paniago*
Univ. der Bundeswehr München, Germany, *Ludwig Maximilians Univ.,
Germany
17:00-17:20
C-4
Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100)
M. Shinohara, M. Niwano, Y. Neo, and K. Yokoo
Tohoku Univ., Japan
17:20-17:40
C-5
Comparative study on the growth kinetics of Si-GSMBE between silane and
disilane as observed with MIR-FTIR
Y. Tsukidate, and M. Suemitsu
Tohoku Univ., Japan
17:40-18:00
C-6
In situ observation of the diamond C(001) surface during H 2 adsorption by
time-resolved ultraviolet photoelectron spectroscopy
Y. Takakuwa, M. Asano, T. Yasuda, T. Hikita, R. Kosugi, S. Kono, D. Takeuchi*,
and H. Okushi*
Tohoku Univ., Japan, *Electrotechnical Lab., Japan
3 × 3 -B
Tuesday, September 14
Royal Hall (3F)
Session D: Thin Film Growth
9:00-9:30
D-1
(Invited)
Diffusion mechanism of Ge atoms on H/Si(100)-(2xl) surface
J. Nara, and T. Ohno
National Research Inst. for Metals, Japan
9:30-9:50
D-2
Surface segregation and interdiffusion of Ge on Si(001) studied by
medium-energy ion scattering
K. Sumitomo, K. Shiraishi, Y. Kobayashi, T. Ito*, and T. Ogino
NTT Basic Research Labs., Japan, *NTT Photonics Labs., Japan
9:50-10:10
D-3
Theoretical and experimental studies on the microscopic origin of the Ge
segregation on Si(001) surfaces: Crucial effect of configurational entropy
K. Shiraishi, K. Sumitomo, Y. Yoshimoto*, H. Kageshima, Y. Kobayashi, T.
Ito**, T. Ogino, and M. Tsukada*
NTT Basic Research Labs., Japan, *The Univ. of Tokyo, Japan, **NTT
Photonics Labs., Japan
10:10-10:30
D-4
Nucleation and growth of Ge on Si(111) in solid phase epitaxy
I. Suzumura, M. Okada, A. Muto, Y. Torige, H. Ikeda, A. Sakai, S. Zaima, and
Y. Yasuda
Nagoya Univ., Japan
10:30-10:50
Break
10:50-11:10
D-5
Experimental study of a surfactant-assisted SiGe graded layer and
symmetrically strained Si/Ge superlattices for thermoelectric applications
J. L. Liu, and K. L. Wang
UCLA, USA
11:10-11:30
D-6
Formation of relaxed SiGe films on Si by selective epitaxial growth
K. Kawaguchi, N. Usami, and Y. Shiraki
The Univ. of Tokyo, Japan
11:30-11:50
D-7
Epitaxial growth of heavily B-doped SiGe films by rapid thermal chemical
vapor deposition
M. Okada, H. Kamioka*, H. Matsuo*, Y. Fukuda*, S. Zaima, S. Ohgawara*,
and Y. Yasuda
Nagoya Univ., Japan, *Canon Sales Co., Inc., Japan
11:50-12:10
D-8
Effects and model of Al predeposition layer on epitaxial silicon growth onto
Al2O3/Si(111) substrates
M. Ishida, Y. Jung, H. Miura, Y. Koji, K. Sawada, M. Yoshimoto*, K. Mizuno*, T.
Miyahara*, and H. Maruta*
Toyohashi Univ. of Technol., Japan, *Tokyo Inst. of Technol., Japan
12:10-13:30
Lunch Break
Tuesday, September 14
Session E: Process Technology
13:30-14:00
E-1
(Invited)
Polycrystalline-SiGe applications in Si CMOS technology
K. C. Saraswat
Stanford Univ., USA
14:00-14:20
E-2
Ge-induced enhancement of solid-phase crystallization of Si on SiO2
S. Yamaguchi, S. K. Park, N. Sugii, K. Nakagawa, and M. Miyao
Hitachi, Ltd., Japan
14:20-14:40
E-3
Formation of strained silicon layer on thin relaxed SiGe/SiO2/Si structure
using SIMOX technology
N. Sugiyama, T. Mizuno, S. Takagi, M. Koike, and A. Kurobe
Toshiba Corp., Japan
14:40-15:00
E-4
Carrier activation process in As+ implanted relaxed Si1-xGex alloys
T. Irisawa, T. Ueno, S. Yamaguchi*, K. Nakagawa*, M. Miyao*, and Y. Shiraki
The Univ. of Tokyo, Japan, *Hitachi Ltd., Japan
15:00-15:20
15:20-15:50
15:50-16:10
Break
E-5
(Invited)
E-6
Atomic layer doping of SiGe-fundamentals and device applications
B. Tillack, B. Heinemann, and D. Knoll
Inst. for Semiconductor Phys., Germany
Ultra-shallow junction technology by rapid thermal annealing from lightly
boron adsorbed layer
Y. H. Song, K. S. Kim, H. Kurino, and M. Koyanagi
Tohoku Univ., Japan
16:10-18:00
POSTER SESSION I
19:30-21:30
RUMP SESSION I
Royal Hall (3F)
Silicon Nanostructures
-How to Control and What to ExpectRecently, Si nanometer-scale structures have been extensively studied, because they are
recognized to be important in developing new Si devices such as single-electron devices
and photonic devices. In this Rump Session, focusing primarily on dots and wires of Si
(and group IV materials), two key issues will be discussed: 1) what kinds of
device-functions can be created by dots or wires? and 2) how far "will" and "must"
fabrication technologies be advanced?
Organizers:
M. Tabe (Shizuoka Univ.)
K. Fujita (Oki)
Panelists (tentative):
I. Eisele (Univ. der Bundeswehr Muenchen, Germany)
M. Ichikawa (JRCAT-ATP, Japan)
S. Matsui (Himeji Inst. of Technol., Japan)
S. Miyazaki (Hiroshima Univ., Japan)
K. Shiraishi (NTT Basic Research Labs, Japan)
K. L. Wang (UCLA, USA)
Wednesday, September 15
Royal Hall (3F)
Session F: Silicide/SiC
9:00-9:30
F-1
Epitaxial silicide interfaces in microelectronics
(Invited) R. T. Tung and S. Ohmi
Lucent Technologies Bell Labs., USA
9:30-9:50
9:50-10:20
F-2
F-3
(Invited)
10:20-10:40
F-4
10:40-11:00
Growth of -FeSi2 and FeSi layers by reactive deposition using Sb-related
intermetallic compounds
T. Koga, A. Bright, T. Suzuki, K. Shimada, H. Tatsuoka, and H. Kuwabara
Shizuoka Univ., Japan
SiC/Si heteroepitaxial growth
M. Kitabatake
Matsushita Electric Industrial Co., Ltd., Japan
Initial stage of SiC film growth on Si(111)7x7 and Si(100)2x1 surfaces using
C60 as a precursor
S. Suto, C. -W. Hu, F. Sato, M. Tanaka, and A. Kasuya
Tohoku Univ., Japan
Break
Session G: Oxidation/Nitridation
11:00-11:20
G-1
A study on the local bonding structures of oxidized Si(111) surfaces by
HREELS
K. Sato, Y. Nakagawa, H. Ikeda, S. Zaima, and Y. Yasuda
Nagoya Univ., Japan
11:20-11:40
G-2
Real-time monitoring of Si thermal oxidation by a combined method of
RHEED and AES
F. Ishida, R. Kosugi, T. Abukawa, and Y. Takakuwa
Tohoku Univ., Japan
11:40-12:00
G-3
Local strain measurement in patterned Si with a novel x-ray diffraction
technique
S. Lagomarsino, S. Di Fonzo*, W. Jark*, C. Giannini**, L. De Caro**, and A.
Cedola
IESS-CNR-V, Italy, *Sincrotrone Trieste, Italy, **PASTIS-CNRSM, Italy
12:00-12:20
G-4
Scanning tunneling microscopy/scanning tunneling spectroscopy of initial
nitridation process of Si(100)-2x1 surfaces
D. Matsushita, A. Sakai, S. Zaima, and Y. Yasuda
Nagoya Univ., Japan
13:30-18:00
EXCURSION
19:00-21:00
BANQUET Royal Hall (3F)
Thursday, September 16
Royal Hall (3F)
Session H: Transport Properties I
9:00-9:30
H-1
(Invited)
Alloy and other scattering mechanisms in Si/SiGe heterostructures for
field effect transistors
T. E. Whall
The Univ. of Warwick, UK
9:30-9:50
H-2
ESR investigations of modulation-doped Si/SiGe quantum wells
N. Sandersfeld*, W. Jantsch*, Z. Wilamowski*,**, and F. Schäffler*
*Johannes Kepler Univ. Linz, Austria, **Polish Academy of Sciences, Poland
9:50-10:10
H-3
Schottky gating high mobility Si-Si1-xGex 2D electron systems
R. B. Dunford, N. Griffin, D. J. Paul, M. Pepper, D. J. Robbins*, A. C.
Churchill*, and W. Y. Leong*
Univ. of Cambridge, UK, *Defence Evaluation and Research Agency, UK
10:10-10:30
H-4
Low temperature buffer growth for modulation doped GeSi/Ge/GeSi
heterostructures with high hole mobility
T. Ueno, T. Irisawa, and Y. Shiraki
The Univ. of Tokyo, Japan
10:30-10:50
Break
Session I: Electronic Devices
10:50-11:10
I-1
Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs
K. Oda, E. Ohue, M. Tanabe*, H. Shimamoto*, and K. Washio
Hitachi Ltd., Japan, *Hitachi Device Engineering Co. Ltd., Japan
11:10-11:30
I-2
Interface-controlled Si/SiGe heterostructures for ultrahigh-mobility FETs
N. Sugii, K. Nakagawa, S. Yamaguchi, S. Park, and M. Miyao
Hitachi Ltd., Japan
11:30-11:50
I-3
Characteristic of Schottky source/drain SOI-MOSFET depending on the
barrier height of silicide contacts
T. Asano, Y. Ochiai, M. Nishisaka, and T. Shikano
Kyushu Inst. of Technol., Japan
11:50-13:30
Lunch Break
Thursday, September 16
13:30-14:00 I-4
Performance enhancements in strained Si/relaxed Si1-xGex MOSFETs
(Invited) J. L. Hoyt, K. Rim and J. F. Gibbons
Stanford Univ., USA
14:00-14:20
I-5
Doped vs. undoped SiGeC layers in sub-100nm vertical p-channel MOSFET's
M. Yang, and J. C. Sturm
Princeton Univ., USA
14:20-14:40
I-6
Growth, processing and characterization of Si/Si0.64Ge0.36/Si heterojunction
p-MOSFETs with thin silicon caps
G. Braithwaite, T. J. Grasby, M. J. Palmer, M. J. Prest, C. P. Parry, P. J. Phillips,
E. H. C. Parker, T. E. Whall, A. M. Waite**, A. G. R. Evans*, S. Roy**, and A.
Asenov**
Univ. of Warwick, UK, *Univ. of Southampton, UK, **Univ. of Glasgow, UK
14:40-15:00
Break
Late News
15:00-15:15
LN-3
Step-flow epitaxy at high temperatures on ultra-flat Si(111)
P. Finnie, and Y. Homma
NTT Basic Research Labs., Japan
15:15-15:30
LN-9
Creation of SiGe-on-insulator substrate by using low-energy oxygen
implantation to MBE-grown SiGe alloys
Y. Ishikawa, N. Shibata, and S. Fukatsu*
Japan Fine Ceramics Center, Japan, *The Univ. of Tokyo, Japan
15:30-15:45
LN-1
Strained Si1-xGex graded channel PMOSFET grown by UHV/CVD
C. Y. Su*, S. L. Wu**, S. J. Chang*,***, and L. P. Chen****
*National Cheng Kung Univ., Taiwan, **Cheng Shiu Inst. of Technol., Taiwan,
***The Univ. of Tokyo, Japan, ****National Nano Device Lab., Taiwan
15:45-16:00
LN-6
A self-aligned epitaxially grown channel MOSFET device architecture for
strained Si/SiGe systems
W. Y. Leong, A. C. Churchill, D. J. Robbins, J. L. Glasper, and G. M. Williams
Defence Evaluation and Research Agency, UK
16:00-18:00
POSTER SESSION II
19:30-21:30
RUMP SESSION II
Royal Hall (3F)
Post Silicon MOSFETs
-Breakthrough with HeterostructuresDevices with heterostructures are eagerly studied as candidates for post Silicon
MOSFETs and Bipolar Transistors. In this Rump Session, we would like to focus on SiGe
related devices, and especially to discuss advantages (or disadvantages) of these
devices. Following device structures will be discussed, FETs with (1) SiGe source/drain,
(2) SiGe gate electrode, (3) SiGe channel, and (4) Bipolar Transistors with SiGe base.
Organizers:
K. Morita (Matsushita)
K. Nakagawa (Hitachi)
T. Tatsumi (NEC)
Panelists (tentative): D. Knoll (Inst. for Semiconductor Phys., Germany)
J. Hoyt (Stanford Univ., USA)
K. C. Saraswat (Stanford Univ., USA)
N. Sugiyama (Toshiba Corp., Japan)
T. Tatsumi (NEC Corp, Japan)
T. E. Whall (The Univ. of Warwick, UK)
Friday, September 17
Royal Hall (3F)
Session J: Transport Properties II
9:00-9:30
J-1
(Invited)
9:30-9:50
J-2
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
D. Knoll, B. Heinemann, K. -E. Ehwald, B. Tillack, P. Schley, and H. J. Osten
Inst. for Semiconductor Phys., Germany
9:50-10:10
J-3
Comparative analysis of minority carrier transport in npn bipolar transistors
with Si, Si1-xGex, and Si1-yCy base layers
B. Heinemann, D. Knoll, G. G. Fischer, P. Schley, and H. J. Osten
Inst. for Semiconductor Phys., Germany
10:10-10:30
J-4
C introduced Si1-xGex/Si resonant tunneling diodes epitaxially grown using
low-temperature low-pressure CVD
P. Han, M. Sakuraba, Y. Jeong, T. Matsuura, and J. Murota
Tohoku Univ., Japan
10:30-10:50
High-speed transport in Si/SiGeC heterostructures
F. Schäffler
Univ. Linz, Austria
Break
Session K: Optical Properties and Devices
10:50-11:20
K-1
Self-organized and self registered Ge dots on Si and their potential
(Invited) applications
K. L. Wang
UCLA, USA
11:20-11:40
K-2
Band ordering of the pseudomorphic Si1-xGex/Si heterostructure: The
fundamental role of excitons
C. Penn, S. Glutsch*, G. Bauer, and F. Schäffler
Univ. Linz, Austria, *Univ. Jena, Germany
11:40-12:00
K-3
Photoluminescence characterization of erbium doped Si1-yCy alloys grown by
MBE
M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, and Ch. Buchal*
TU München, Germany, *Forschungszentrum Jülich GmbH, Germany
12:00-12:20
K-4
Field-enhanced stokes shifts in strained Si1-yCy/Si(001) symmetric quantum
wells
Y. Sugawara, S. Fukatsu, K. Brunner*, and K. Eberl*
The Univ. of Tokyo, Japan, *Max-Planck-Inst., Germany
12:20-13:30
Lunch Break
Friday, September 17
13:30-13:50
K-5
Growth and characterization of 70Gen/74Gen isotope superlattices
K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi*, N. Usami**, Y. Shiraki**, and E. E.
Haller***
Keio Univ. Japan, *Osaska Univ., Japan, **The Univ. of Tokyo, Japan, ***UC
Berkeley and Lawrence Berkeley National Labs., US
13:50-14:10
K-6
Structural and optical properties of Si/Si1-xGex wires
Y. Zhuang, C. Schelling, J. Stangl, C. Penn, S. Senz*, F. Schäffler, A. Daniel,
U. Pietsch**, and G. Bauer
Univ. Linz, Austria, *Max-Planck-Inst., Germany, **Univ. Potsdam, Germany
14:10-14:30
K-7
1.54 µm light emitting devices based on Er/O-doped Si layered structures
grown by molecular beam epitaxy
W. Ni, C. Du, Kenneth, B. Joelsson, F. Duteil, and G. V. Hansson
Linköping Univ., Sweden
14:30-14:50
K-8
Y-branch 1.3/1.55 µm wavelength multi/demultiplexer based on the plasma
dispersion effect
B. Li, Z. Jiang, X. Wang, G. Li*, and E. Liu*
Fudan Univ., China, *Xi'an Jiaotong Univ., China
14:50-15:00
Closing Remarks
Y. Shiraki
The Univ. of Tokyo, Japan
POSTER SESSION I
16:10-18:00, Tuesday, September 14
PI-1
A novel measurement method of segregating adlayers in MBE
M. Oehme, M. Bauer, T. Grasby*, and E. Kasper
Univ. Stuttgart, Germany, *Univ. of Warwick, UK
PI-2
Micro-roughness control of the Si1-xGex surfaces treated with buffered hydrofluoric acid
S. Ishida, T. Osada, M. Miyamoto, M. Sakuraba*, T. Matsuura*, and J. Murota*
Morita Chemical Industries Co., Ltd., Japan, *Tohoku Univ., Japan
PI-3
Dynamics of surface phase separation on patterned substrates by molecular beam epitaxy
Y. Enomoto
Nagoya Inst. of Technol., Japan
PI-4
Ge thin film growth on Si(111) surface using hydrogen surfactant
T. Fujino, T. Fuse, J. -T. Ryu, K. Inudzuka, T. Nakano, K. Goto, Y. Yamazaki, M. Katayama, and
K. Oura
Osaka Univ., Japan
PI-5
RHEED studies of nucleation of Ge islands on Si(001)
A. I. Nikiforov, V. A. Cherepanov*, V. A. Markov, and O. P. Pchelyakov
Inst. of Semiconductor Phys., Russia, *Novosibirsk State Univ., Russia
PI-6
Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer
H. Takamiya, N. Usami*, T. Hattori, and Y. Shiraki*
Musashi Inst. of Technol., Japan, *The Univ. of Tokyo, Japan
PI-7
Positioning of self-assembling Ge islands on Si(111) mesas using atomic steps
H. Omi, and T. Ogino
NTT Basic Research Lab., Japan
PI-8
Boron-mediated growth of Ge quantum dot on Si(100) substrate
Z. M. Jiang, X. F. Zhou, B. Shi, D. Z. Hu, and X. Wang
Fudan Univ., China
PI-9
Growth temperature dependence on the formation of carbon-induced Ge quantum dots
Y. J. Kim, S. H. Ihm, J. H. Seok, C. H Lee, X. Y. Zhu, Y. H. Lee, and E. -K. Suh
Chonbuk National Univ.
PI-10 Strain and island formation in Ge/Si(111)
F. Rosei, N. Motta, E. Placidi, and A. Sgarlata
Fisica Univ. di Roma Tor Vergata, Italy
PI-11 Characterization of Si-Ge-C thin films by MeV ion scattering and x-ray diffraction
M. Nagaki, T. Narusawa, A. Hiraki, T. Saitoh*, and M. Kubo*
Kochi Univ., Japan, *Matsushita Electric Industrial Co. Ltd., Japan
PI-12 Alternatives to thick MBE-grown relaxed SiGe buffers
T. Hackbarth, H. -J. Herzog, M. Zeuner, H. Kibbel, G. Hoeck, E. A. Fitzgerald*, M. Bulsara**, C.
Rosenblad***, H. v. Kaenel***, S. Mantl****, and B. Hollaender****
Daimler Chrysler AG, Germany, *Massachusetts Inst. of Technol., USA, **Amber Wave, USA,
***Lab. fuer Festkoerperphysik, Switzerland, ****ISI-IT, Germany
POSTER SESSION I
PI-13 Growth and mechanical properties of GeSi bulk crystals
I. Yonenaga
Tohoku Univ., Japan
PI-14 Relaxed SiGe buffers with thicknesses below 0.1µm
M. Bauer, K. Lyutovich, M. Oehme, E. Kasper, H. -J. Herzog*, and F. Ernst**
Univ. Stuttgart, Germany, *Daimler Chrysler Research and Technol. Center Ulm, Germany,
**Max-Planck-Inst., Germany
PI-15 Synthesis of SiGeC layers by ion implantation of Ge and C
H. Kurata, M. Ohfuti, and T. Futatsugi
Fujitsu Lab. Ltd., Japan
PI-16 Dependence of film quality on type of 60° misfit dislocations in GeSi on Si(001)
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, L. V. Sokolov, A. K. Gutakovsky, V. I.
Mashanov, and M. A. Revenko
Inst. of Semiconductor Phys., Russia
PI-17 Depth profiling of Ge in three-period Si/SiGe multilayers grown by molecular beam epitaxy
using medium-energy coaxial impact-collision ion scattering spectroscopy
T. Kobayashi*, C. F. McConville**, G. Dorenbos*, M. Iwaki*, and M. Aono*,***
*RIKEN, Japan, **Univ. of Warwick, UK, ***Osaka Univ., Japan
PI-18 Spectro-ellipsometric characterization of thin Si1-xGex films grown on Si(100)
H. Akazawa
NTT Telecommunications Energy Labs., Japan
PI-19 Residual strain and surface roughness of Si1-xGex alloy layers grown by molecular beam
epitaxy on Si(001) substrate
C. Tatsuyama, T. Asano, T. Nakao, H. Matada, T. Tambo, and H. Ueba
Toyama Univ., Japan
PI-20 Characterization of heterostructures with x-ray film interferometer
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, L. V. Sokolov, A. A. Fedorov, O. P.
Pchelyakov, A. I. Nikiforov, and S. I. Romanov
Inst. of Semiconductor Phys., Russia
PI-21 Bimodal size distribution of Ge islands grown on Si(001) by molecular beam epitaxy
N. Ninomiya N. Happo, M. Fujiwara, M. Iwamatsu, and K. Horii
Hiroshima City Univ., Japan
PI-22 Strain near SiO2-Si interface revealed by x-ray diffraction intensity enhancement
T. Emoto, K. Akimoto, Y. Ishikawa, A. Ichimiya, and A. Tanikawa*
Nagoya Univ., Japan, *NEC Corp., Japan
PI-23 Growth of Mn doped epitaxial -FeSi2 films on Si(001) substrates by reactive deposition
epitaxy
K. Takakura, T. Suemasu, and F. Hasegawa
Univ. of Tsukuba, Japan
PI-24 Growth of epitaxial CoSi2 for contacts of ultra-thin SOI MOSFETs
K. Sakamoto, T. Maeda, and M. Hasegawa
Electrotechnical Lab., Japan
PI-25 Effect of Ti evaporation on high temperature Si substrate on TiSi2 formation
K. Ezoe, T. Yamamoto, K. Ishii, and S. Matsumoto
Keio Univ., Japan
PI-26 Gas-source MBE of SiC/Si using monomethylsilane
POSTER SESSION I
H. Nakazawa, M. Suemitsu, and S. Asami*
Tohoku Univ., Japan, *Sendai National College of Technol., Japan
PI-27 Nucleation and growth kinetics of 3C-SiC on Si(001) during carbonization
R. Kosugi, M. Shimomura, T. Abukawa, Y. Fukuda*, S. Kono, and Y. Takakuwa
Tohoku Univ., Japan, *Shizuoka Univ., Japan
PI-28 Heteroepitaxial growth of SrO on hydrogen-terminated Si(001) surface
H. Asaoka, H. Yamamoto, K. Saiki*, and A. Koma*
Japan Atomic Energy Research Inst., Japan, *The Univ. of Tokyo, Japan
PI-29 Surfaces and interfaces of heteroepitaxially grown yttria-stabilized zirconia (YSZ) on (100),
(110), (111) Si substrates by reactive sputtering
T. Hata, K. Sasaki, Y. Ichikawa*, M. Nagashima, and K. Sasaki
Kanazawa Univ., Japan, *RITE, Japan
LN-2 Thermal decomposition pathway of germanium and silicon oxides: Observation of a distinct
difference
K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino
NTT Basic Research Labs., Japan
LN-7 Formation of size controlled Ge nanocrystals in SiO2 matrix by ion implantation and annealing
M. Yamamoto*,**, T. Koshikawa**, T. Yasue**, H. Harima***, and K. Kajiyama*
*Ion Engineering Research Inst., Japan, **Osaka Electro-Communication Univ., Japan,
***Osaka Univ., Japan
LN-8 Non-equilibrium molecular orbital calculations of Si/SiO2 and Si/SiOxNy interfaces
J. Schulte, J. Ushio*, and T. Maruizumi*
Univ. of Technol., Australia, *Hitachi Ltd., Japan
LN-5 Low-temperature growth of In Situ phosphorus-doped silicon films: two step growth utilizing
amorphous silicon buffers
H.-S. Kim, K.-H. Shim, J.-Y. Lee*, J.-Y. Kang, M.-K. Song, and D. S. Ma
Electronics and Telecommunications Research Inst., Korea, *Korea Advanced Inst. of Science
and Technol., Korea
POSTER SESSION II
16:00-18:00, Thursday, September 16
PII-1
Diffusion and segregation of impurities from doped Si1-xGex films into silicon
S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba*, T. Matsuura*, and J.
Murota*
Tokyo Inst. of Polytechnics, Japan, *Tohoku Univ., Japan
PII-2
Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction
A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda*, M. Fujiu*, T. Takatsuka*, A. Moriya*, M.
Sakuraba*, T. Matsuura*, and J. Murota*
Nippon Sanso Corp., Japan, *Tohoku Univ., Japan
PII-3
Enhancement of thermal diffusion of delta-doped Sb in SiGe
K. Nakagawa, N. Sugii, S. Yamaguchi, and M. Miyao
Hitachi, Ltd., Japan
PII-4 Approaches to the optimization of SS-MBE grown vertical architecture in SiGe
p-MOSFET devices for CMOS
T. G. Grasby , C. P. Parry, A. D. Lambert, B. M. McGregor, G. M. Braithwaite, P. J.
Phillips, T. E. Whall, and E. H. C. Parker
Univ. of Warwick, UK
PII-5 Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si2H6
and PH3
F. Hirose
Mitsubishi Heavy Industries Ltd., Japan
PII-6
Heteroepitaxial growth of SiGe films and heavily B doping by ion beam sputtering
K. Sasaki, Y. Nabetani, H. Miyashita, and T. Hata
Kanazawa Univ., Japan
PII-7
ULPCVD/GSMBE of SiGe for high mobility transport device structures
N. J. Woods, J. Zhang, and D. Paul*
Imperial College of Science, UK, *Univ. of Cambridge, UK
POSTER SESSION II
PII-8
Si/SiGe n-type inverted modulation-doping using ion implantation
A. Ahmed, R. B. Dunford, D. J. Paul, M. Pepper, A. C. Churchill*, D. J. Robbins*, and
W. Y. Leong*
Univ. of Cambridge, UK, *Defence Evaluation Research Agency, UK
PII-9 Transport properties of the two-dimensional electron gas in a strained-Si/SiGe
heterostructure at low carrier densities
T. Hatakeyama, T. Tezuka, N. Sugiyama, and A. Kurobe
Toshiba R and D Center, Japan
PII-10 Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures
S. Madhavi, and V. Venkataraman
Indian Inst. of Science, India
PII-11 Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe
n-channel HMOSFETs
G. Wöhl, V. Dudek*, M. Graf*, H. Kibbel**, H. -J. Herzog**, and M. Klose***
Univ. Stuttgart, Germany, *Inst. f. Mikroelectronik Stuttgart, Germany, **Daimler
Chrysler-AG, Germany, ***Inst. f. Techn. Physik, Germany
PII-12 Structural characterization of Si1-xGex/Si relaxed virtual substrates and strained
superlattices grown by chemical vapor deposition
J. -L. Lazzari, S. Bozzo, B. Hollaender*, S. Mantl*, A. Ronda, C. Coudreau, F. A.
D’avitaya, and J. Derrien
CRMC2-CNRS, France, *Forschungszentrum Juelich GmbH, Germany
PII-13 Experimental evidence of valence band deformation due to strain in inverted hole
channel of strained-Si pMOSFETs
T. Tezuka, A. Kurobe, N. Sugiyama, and S. Takagi
Toshiba Corp., Japan
PII-14 Drain leakage current and instability of drain current in
Si/Si1-xGex MOSFETs
T. Tsuchiya, K. Goto*, M. Sakuraba*, T. Matsuura*, and J. Murota*
Shimane Univ., Japan, *Tohoku Univ., Japan
PII-15 Optimization of breakdown behaviour and on-state current in MBE grown vertical
POSTER SESSION II
MOS-devices with local channel doping
C. Fink, K. G. Anil, W. Hansch, J. Schulze, and I. Eisele
Univ. der Bundeswehr München, Germany
PII-16 Si/SiGe heterostructure field effect transistors fabricated using CMOS processing
D. J. Paul, R. B. Dunford, M. Pepper, B. P. Coonan*, N. Griffin*, G. Redmond*, G.
Crean*, B. Holländer**, and S. Mantl**
Univ. of Cambridge, UK, *Univ. College Cork, Ireland, **ISI-IT Forschungszentrum
Jülich, Germany
PII-17 Realization of silicon Esaki tunneling transistor
W. Hansch, C. Fink, J. Schulze, and I. Eisele
Univ. der Bundeswehr München, Germany
PII-18 Si/SiGe double barrier resonant tunneling structures
G. Dehlinger, U. Gennser, D. Grützmacher, T. Ihn*, and K. Ensslin*
Paul Scherrer Inst., Switzerland, *ETH Zürich, Switzerland
PII-19 Negative resistance SiGe VCOs at 4.5-GHz
T. Leppänen, T. Jarva, T. Teppo, T. Palonen, A. Ruotsalainen, and E. Ristolainen
Tampere Univ. of Technol., Finland
PII-20 In-situ scanning tunneling microscopy observation of pyramidal Si nanocrystals
selectively grown on Si(001) windows in ultrathin SiO2 films
M. Shibata, Y. Nitta, K. Fujita, and M. Ishikawa
JRCAT-ATP, Japan
PII-21 Formation process and ordering of self-assembled Ge islands
M. Miura, J. M. Hartmann*, J. Zhang**, B. Joyce**, and Y. Shiraki
The Univ. of Tokyo, Japan, *Commissariat A L`energie Atomique, France, **Imperial
College of Science Techonol. and Medicine, UK
PII-22 Optical investigation of modified Stranski-Krastanov growth mode in stacking of
self-assembled Ge islands
N. Usami, and Y. Shiraki
The Univ. of Tokyo, Japan
POSTER SESSION II
PII-23 Realization of a SiGe patterned substrate using surface periodic modulations
A. Ronda, M. Abdallah, J. M. Gay, L. Lapena, and I. Berbezier
CRMC2-CNRS, France
PII-24 Structural and optical characterization of SiGe/Si quantum structures
I. Berbezier, M. Abdallah, A. Ronda, M. Halsall*, A. Souifi**, and G. Bremond**
CRMC2-CNRS, France, *UMIST, UK, **UMR-CNRS, France
PII-25 Anomalous surface absorption band at 1.2eV in Si1-xGex alloy-based structures
Y. Kishimoto, K. Kawamoto, and S. Fukatsu
The Univ. of Tokyo, Japan
PII-26 Peculiarities and advantages of optically active Si:Er and SixGe1-x layers grown by the
sublimation MBE method
M. V. Stepikhova, B. A. Andreev, V. B. Shmagin, Z. F. Krasil’nik, V. P. Kuznetsov*, V. G.
Shengurov*, S. P. Svetlov*, W. Jantsch**, L. Palmetshofer**, and H. Ellmer**
Inst. for Phys. of Microstructures RAS, Russia, *Nizhny Novgorod State Univ, Russia,
**Univ. Linz, Austria
PII-27 Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD
T. P. Sidiki, S. Christiansen*, M. Albrecht*, W. B. de Boer**, C. Ferrari***, and C. M. S.
Torres
Bergische Univ.-GH Wuppertal, Germany, *Univ. Erlangen, Germany, **Philips
Research Lab., The Netherlands, ***CNR Maspec Inst., Italy
PII-28 Metal-semiconductor-metal photodetector for 1.3 and 1.55 µm based on relaxed Ge
film on silicon substrate
M. Fiordelisi, R. Calarco, L. Colace*, G. Masini*, F. Scarinci, G. Asssanto*, F.
Galluzzi*, and S. Lagomarsino
IESS-CNR- V. Cineto Ramano, Italy, *Univ. degli Studi “Roma Tre”, Italy
LN-4 Optical investigation of self-organized Ge/Si quantum dots grown at low temperature
H. H. Cheng, C. Y. Chia*, C. C. Chen, Y. H. Peng, C. H. Kuan, X. J. Guo**, and V. A.
Markov**
National Taiwan Univ., Taiwan, *Taiwan Noraml Univ., Taiwan, **National Tsing-Hua
Univ., Taiwan, ***Tohoku Univ., Japan