• Study Resource
  • Explore Categories
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Conformable, flexible, large-area networks of pressure and thermal
Conformable, flexible, large-area networks of pressure and thermal

... positioned were activated, although a small crosstalk was detected because of small leakage current through the gate dielectric layers of the organic transistors. When the rubber block was positioned on another pair of cells, only that pair was activated. Compared with rubber-based stretchable condu ...
LOW-OHMIC PRECISION AND POWER RESISTORS
LOW-OHMIC PRECISION AND POWER RESISTORS

LM50 and LM50-Q1 SOT-23 Single-Supply Centigrade Temperature
LM50 and LM50-Q1 SOT-23 Single-Supply Centigrade Temperature

ICS854S01I Datasheet - Integrated Device Technology
ICS854S01I Datasheet - Integrated Device Technology

... and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated ...
New MEGA POWER DUALŽ IGBT Module with Advanced
New MEGA POWER DUALŽ IGBT Module with Advanced

RF3396 GENERAL PURPOSE AMPLIFIER Features
RF3396 GENERAL PURPOSE AMPLIFIER Features

Si2318DS
Si2318DS

... planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the ...
Lecture 6/7 - TCD Chemistry
Lecture 6/7 - TCD Chemistry

... Chemistry3 , Chapter 14, Energy and Thermochemistry, pp.658-700. Elements of Physical Chemistry, 5th edition, Atkins & de Paula, Chapter 3, Thermodynamics: applications of the first law. pp. 63-82. Chapter 4. Thermodynamics: The Second Law, pp.83-104. Physical Chemistry, 8th Edition, Atkins & de Pau ...
Aalborg Universitet thermal
Aalborg Universitet thermal

Self-heating and memory effects in RF power amplifiers
Self-heating and memory effects in RF power amplifiers

Commercial Spa Blower Selection Guide
Commercial Spa Blower Selection Guide

SIFT Scanner System
SIFT Scanner System

FPD3000SOT89CE LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Features
FPD3000SOT89CE LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Features

Stag3D: A code for modeling thermo
Stag3D: A code for modeling thermo

... fast ethernet communication, using cell relaxation and a problem size scaled with #nodes. Multigrid V-cycles are used for obtaining velocity/pressure solutions in an efficient manner (Table 1) but iterations may not converge when large viscosity gradients are present. The following strategies improv ...
FRSH Series - Vishay Precision Group
FRSH Series - Vishay Precision Group

OPA551 OPA552 High-Voltage, High-Current OPERATIONAL AMPLIFIERS
OPA551 OPA552 High-Voltage, High-Current OPERATIONAL AMPLIFIERS

The Development of a Qualification Temperature Profile for Lead
The Development of a Qualification Temperature Profile for Lead

... (Tliquid=217 °C) has to be performed at a minimum peak temperature of Tmin = 230 °C – just 13 K above the melting temperature – to minimize the heat impact on semiconductor and passive components and on the printed circuit board. Despite the relatively low temperature, the reliability of the solder ...
NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Features
NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Features

Micro Sensing Device Data Book
Micro Sensing Device Data Book

nano-TA: Enable your AFM perform sub-100nm Local
nano-TA: Enable your AFM perform sub-100nm Local



NCT3941S/S-A
NCT3941S/S-A

AdvancedEndplate
AdvancedEndplate

Cross-Over Distortion
Cross-Over Distortion

Laboratory Exercise 12 – THERMAL EFFICIENCY
Laboratory Exercise 12 – THERMAL EFFICIENCY

... Heat Conduction and Radiation: The heat that leaves the hot reservoir goes two places: part of it is actually available to be used by the heat engine to do work while the other part bypasses the engine either by being radiated away from the hot reservoir or by being conducted through the Peltier dev ...
< 1 ... 13 14 15 16 17 18 19 20 21 ... 41 >

Thermal copper pillar bump



The thermal copper pillar bump, also known as the ""thermal bump"", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers (SOA). Unlike conventional solder bumps that provide an electrical path and a mechanical connection to the package, thermal bumps act as solid-state heat pumps and add thermal management functionality locally on the surface of a chip or to another electrical component. The diameter of a thermal bump is 238 μm and 60 μm high.The thermal bump uses the thermoelectric effect, which is the direct conversion of temperature differences to electric voltage and vice versa. Simply put, a thermoelectric device creates a voltage when there is a different temperature on each side, or when a voltage is applied to it, it creates a temperature difference. This effect can be used to generate electricity, to measure temperature, to cool objects, or to heat them.For each bump, thermoelectric cooling (TEC) occurs when a current is passed through the bump. The thermal bump pulls heat from one side of the device and transfers it to the other as current is passed through the material. This is known as the Peltier effect. The direction of heating and cooling is determined by the direction of current flow and the sign of the majority electrical carrier in the thermoelectric material. Thermoelectric power generation (TEG) on the other hand occurs when the thermal bump is subjected to a temperature gradient (i.e., the top is hotter than the bottom). In this instance, the device generates current, converting heat into electrical power. This is termed the Seebeck effect.The thermal bump was developed by Nextreme Thermal Solutions as a method for integrating active thermal management functionality at the chip level in the same manner that transistors, resistors and capacitors are integrated in conventional circuit designs today. Nextreme chose the copper pillar bump as an integration strategy due to its widespread acceptance by Intel, Amkor and other industry leaders as the method for connecting microprocessors and other advanced electronics devices to various surfaces during a process referred to as “flip-chip” packaging. The thermal bump can be integrated as a part of the standard flip-chip process (Figure 1) or integrated as discrete devices.The efficiency of a thermoelectric device is measured by the heat moved (or pumped) divided by the amount of electrical power supplied to move this heat. This ratio is termed the coefficient of performance or COP and is a measured characteristic of a thermoelectric device. The COP is inversely related to the temperature difference that the device produces. As you move a cooling device further away from the heat source, parasitic losses between the cooler and the heat source necessitate additional cooling power: the further the distance between source and cooler, the more cooling is required. For this reason, the cooling of electronic devices is most efficient when it occurs closest to the source of the heat generation.Use of the thermal bump does not displace system level cooling, which is still needed to move heat out of the system; rather it introduces a fundamentally new methodology for achieving temperature uniformity at the chip and board level. In this manner, overall thermal management of the system becomes more efficient. In addition, while conventional cooling solutions scale with the size of the system (bigger fans for bigger systems, etc.), the thermal bump can scale at the chip level by using more thermal bumps in the overall design.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report