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TB3R2 数据资料 dataSheet 下载
TB3R2 数据资料 dataSheet 下载

LTPL-C034UVH430
LTPL-C034UVH430

... Recommend Printed Circuit Board Attachment Pad ...
LEDKIT-100 Datasheet
LEDKIT-100 Datasheet

PAM2800AABR - Diodes Incorporated
PAM2800AABR - Diodes Incorporated

... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
1 - Raystar Optronics
1 - Raystar Optronics

... pressed, touch panel shows degradation of its performance and durability such as a pen sliding durability becomes about one-tenth compared with the active area (Area-(a) as guaranteed area) and its operation force requires about double. About 0.5mm outside from a boundary of the active area correspo ...
LM35 Precision Centigrade Temperature Sensors (Rev. D)
LM35 Precision Centigrade Temperature Sensors (Rev. D)

... The LM35 is applied easily in the same way as other integrated-circuit temperature sensors. Glue or cement the device to a surface and the temperature should be within about 0.01°C of the surface temperature. This presumes that the ambient air temperature is almost the same as the surface temperatur ...
Author template for journal articles
Author template for journal articles

Electrical Thermal Network for Direct Contact Membrane Distillation
Electrical Thermal Network for Direct Contact Membrane Distillation

Aalborg Universitet
Aalborg Universitet

LM35 Precision Centigrade Temperature Sensors (Rev. C)
LM35 Precision Centigrade Temperature Sensors (Rev. C)

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Supplementary Information (doc 560K)

LP38512-ADJ - Texas Instruments
LP38512-ADJ - Texas Instruments

... A ceramic input capacitor of at least 10 µF is required. For general usage across all load currents and operating conditions, a 10 µF ceramic input capacitor will provide satisfactory performance. Output Capacitor A ceramic capacitor with a minimum value of 10 µF is required at the output pin for lo ...
IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology
IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology

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DRV8801-Q1 DMOS Full-Bridge Motor Drivers

... The DRV8801-Q1 is an integrated motor driver solution for brushed-DC motors. The device integrates a DMOS H-bridge and current sense and protection circuitry. The device can be powered with a supply voltage between 8 and 38 V, and is capable of providing an output current up to 2.8 A peak. A simple ...
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X-ray tube 2

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AB INITIO CALCULATED LATTICE STABILITY OF SIGMA

DRV8872-Q1 Automotive 3.6-A Brushed DC Motor Driver With Fault
DRV8872-Q1 Automotive 3.6-A Brushed DC Motor Driver With Fault

... 7.4.1 PWM With Current Regulation This scheme uses all of the capabilities of the device. The ITRIP current is set above the normal operating current, and high enough to achieve an adequate spin-up time, but low enough to constrain current to a desired level. Motor speed is controlled by the duty cy ...
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Motor Protection Principles

300-mA, Sub-Bandgap Output Voltage, Low-Iq, Low
300-mA, Sub-Bandgap Output Voltage, Low-Iq, Low

... However, the TLV712xx is designed to be stable with an effective capacitance of 0.1 mF or larger at the output. Thus, the device is stable with capacitors of other dielectric types as well, as long as the effective capacitance under operating bias voltage and temperature is greater than 0.1 mF. This ...
Equivalent Electrical Circuits of Thermoelectric Generators under
Equivalent Electrical Circuits of Thermoelectric Generators under

... conditions, under constant temperature gradient or constant heat flow. The commonly used TEG electrical model, based on a voltage source in series with an electrical resistance, shows its limitations especially under constant heat flow conditions. Here, the analytical electrical modeling, taking int ...
Ohm`s law for a wire in contact with a thermal reservoir
Ohm`s law for a wire in contact with a thermal reservoir

Thermal stability of the krypton Hall effect thruster*
Thermal stability of the krypton Hall effect thruster*

Thermal stability of the krypton Hall effect thruster*
Thermal stability of the krypton Hall effect thruster*

Number of Electron Pairs Allowed Sigmatropic Rearrangement
Number of Electron Pairs Allowed Sigmatropic Rearrangement

Flex Series (Z Foil) - Vishay Precision Group
Flex Series (Z Foil) - Vishay Precision Group

... • Resistance range: 5 Ω to 80 kΩ (for higher and lower values, please contact us) • Bulk Metal Foil resistors are not restricted to standard values; we can supply specific “as required” values at no extra cost or delivery (e.g., 1K01234 vs. 1 k) • Power rating: to 600 mW at +70°C • Thermal stabi ...
< 1 ... 11 12 13 14 15 16 17 18 19 ... 41 >

Thermal copper pillar bump



The thermal copper pillar bump, also known as the ""thermal bump"", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers (SOA). Unlike conventional solder bumps that provide an electrical path and a mechanical connection to the package, thermal bumps act as solid-state heat pumps and add thermal management functionality locally on the surface of a chip or to another electrical component. The diameter of a thermal bump is 238 μm and 60 μm high.The thermal bump uses the thermoelectric effect, which is the direct conversion of temperature differences to electric voltage and vice versa. Simply put, a thermoelectric device creates a voltage when there is a different temperature on each side, or when a voltage is applied to it, it creates a temperature difference. This effect can be used to generate electricity, to measure temperature, to cool objects, or to heat them.For each bump, thermoelectric cooling (TEC) occurs when a current is passed through the bump. The thermal bump pulls heat from one side of the device and transfers it to the other as current is passed through the material. This is known as the Peltier effect. The direction of heating and cooling is determined by the direction of current flow and the sign of the majority electrical carrier in the thermoelectric material. Thermoelectric power generation (TEG) on the other hand occurs when the thermal bump is subjected to a temperature gradient (i.e., the top is hotter than the bottom). In this instance, the device generates current, converting heat into electrical power. This is termed the Seebeck effect.The thermal bump was developed by Nextreme Thermal Solutions as a method for integrating active thermal management functionality at the chip level in the same manner that transistors, resistors and capacitors are integrated in conventional circuit designs today. Nextreme chose the copper pillar bump as an integration strategy due to its widespread acceptance by Intel, Amkor and other industry leaders as the method for connecting microprocessors and other advanced electronics devices to various surfaces during a process referred to as “flip-chip” packaging. The thermal bump can be integrated as a part of the standard flip-chip process (Figure 1) or integrated as discrete devices.The efficiency of a thermoelectric device is measured by the heat moved (or pumped) divided by the amount of electrical power supplied to move this heat. This ratio is termed the coefficient of performance or COP and is a measured characteristic of a thermoelectric device. The COP is inversely related to the temperature difference that the device produces. As you move a cooling device further away from the heat source, parasitic losses between the cooler and the heat source necessitate additional cooling power: the further the distance between source and cooler, the more cooling is required. For this reason, the cooling of electronic devices is most efficient when it occurs closest to the source of the heat generation.Use of the thermal bump does not displace system level cooling, which is still needed to move heat out of the system; rather it introduces a fundamentally new methodology for achieving temperature uniformity at the chip and board level. In this manner, overall thermal management of the system becomes more efficient. In addition, while conventional cooling solutions scale with the size of the system (bigger fans for bigger systems, etc.), the thermal bump can scale at the chip level by using more thermal bumps in the overall design.
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