Snap Circuits 102-305
									
... After building the circuits given in this booklet, you may wish to experiment on your own. Use the projects in this booklet as a guide, as many important design concepts are introduced throughout them. Every circuit will include a power source (the batteries), a resistance (which might be a resistor ...
                        	... After building the circuits given in this booklet, you may wish to experiment on your own. Use the projects in this booklet as a guide, as many important design concepts are introduced throughout them. Every circuit will include a power source (the batteries), a resistance (which might be a resistor ...
									TOPICAL REVIEW Semiconductor nanowires
									
... (figure 2(e)) and the single (111) plane at the catalyst/NW interface (figure 3(a)) were indeed observed on VLS-grown SiNWs as well, with diameters larger than 20 nm [11]. On the other hand, 110 becomes the predominant growth direction for NWs with diameter smaller than 10 nm (figure 2(c)). This p ...
                        	... (figure 2(e)) and the single (111) plane at the catalyst/NW interface (figure 3(a)) were indeed observed on VLS-grown SiNWs as well, with diameters larger than 20 nm [11]. On the other hand, 110 becomes the predominant growth direction for NWs with diameter smaller than 10 nm (figure 2(c)). This p ...
									Lecture 19: SRAM
									
... – Holds one bit of information, like a latch – Must be read and written  12-transistor (12T) SRAM cell – Use a simple latch connected to bitline – 46 x 75 l unit cell bit write write_b read read_b ...
                        	... – Holds one bit of information, like a latch – Must be read and written  12-transistor (12T) SRAM cell – Use a simple latch connected to bitline – 46 x 75 l unit cell bit write write_b read read_b ...
									Electroacoustic modelling of the subwoofer enclosures
									
... it generates a volume velocity SD u. Due to air load and possible loading from the box where the driver is mounted, this creates a counterforce SD pD , which in turn resists movement of the diaphragm. This is seen as reduction in the driver electrical impedance. ZAB is the acoustic load impedance of ...
                        	... it generates a volume velocity SD u. Due to air load and possible loading from the box where the driver is mounted, this creates a counterforce SD pD , which in turn resists movement of the diaphragm. This is seen as reduction in the driver electrical impedance. ZAB is the acoustic load impedance of ...
									Basic BJT Amplifiers Circuits
									
... In BJTs, the PN junctions (EBJ and CBJ) also have capacitances associated with them C ...
                        	... In BJTs, the PN junctions (EBJ and CBJ) also have capacitances associated with them C ...
									Time Varying Circuits
									
... When switch is first closed, current begins to flow rapidly. The flux through the inductor changes rapidly. An emf is created in the coil that opposes the increase in current. The net potential difference across the resistor is the battery emf opposed by the emf of the coil. ...
                        	... When switch is first closed, current begins to flow rapidly. The flux through the inductor changes rapidly. An emf is created in the coil that opposes the increase in current. The net potential difference across the resistor is the battery emf opposed by the emf of the coil. ...
Integrated circuit
                        An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small plate (""chip"") of semiconductor material, normally silicon. This can be made much smaller than a discrete circuit made from independent electronic components. ICs can be made very compact, having up to several billion transistors and other electronic components in an area the size of a fingernail. The width of each conducting line in a circuit can be made smaller and smaller as the technology advances; in 2008 it dropped below 100 nanometers, and has now been reduced to tens of nanometers.ICs were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. The integration of large numbers of tiny transistors into a small chip was an enormous improvement over the manual assembly of circuits using discrete electronic components. The integrated circuit's mass production capability, reliability and building-block approach to circuit design ensured the rapid adoption of standardized integrated circuits in place of designs using discrete transistors.ICs have two main advantages over discrete circuits: cost and performance. Cost is low because the chips, with all their components, are printed as a unit by photolithography rather than being constructed one transistor at a time. Furthermore, packaged ICs use much less material than discrete circuits. Performance is high because the IC's components switch quickly and consume little power (compared to their discrete counterparts) as a result of the small size and close proximity of the components. As of 2012, typical chip areas range from a few square millimeters to around 450 mm2, with up to 9 million transistors per mm2.Integrated circuits are used in virtually all electronic equipment today and have revolutionized the world of electronics. Computers, mobile phones, and other digital home appliances are now inextricable parts of the structure of modern societies, made possible by the low cost of integrated circuits.