2016 China International Conference on Electricity Distribution
... sag has risen to be the most important problem of power quality, and that it should be paid more attention to. Voltage sag is defined as any voltage drop event between 10% and 90% of the nominal RMS voltage, lasting between 10ms to 1 min. It is always caused by short-circuits on power systems and it ...
... sag has risen to be the most important problem of power quality, and that it should be paid more attention to. Voltage sag is defined as any voltage drop event between 10% and 90% of the nominal RMS voltage, lasting between 10ms to 1 min. It is always caused by short-circuits on power systems and it ...
SDM0230CSP Product Summary Features and Benefits
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
NX5P1000 1. General description Logic controlled high-side power switch
... applications. The device includes under voltage and over voltage lockout, over-current, over-temperature, reverse bias and in-rush current protection circuits. These circuits are designed to isolate a VBUS OTG voltage source automatically from a VBUS interface pin when a fault condition occurs. The ...
... applications. The device includes under voltage and over voltage lockout, over-current, over-temperature, reverse bias and in-rush current protection circuits. These circuits are designed to isolate a VBUS OTG voltage source automatically from a VBUS interface pin when a fault condition occurs. The ...
FSA266 • NC7WB66 Low Voltage Dual SPST FSA26
... The FSA266 or NC7WB66 is an ultra high-speed (UHS) dual single-pole/single-throw (SPST) analog switch or 2-bit bus switch. The device is fabricated with advanced sub-micron CMOS technology to achieve high speed enable and disable times and low On Resistance over a broad VCC range. The device is spec ...
... The FSA266 or NC7WB66 is an ultra high-speed (UHS) dual single-pole/single-throw (SPST) analog switch or 2-bit bus switch. The device is fabricated with advanced sub-micron CMOS technology to achieve high speed enable and disable times and low On Resistance over a broad VCC range. The device is spec ...
AP1115 Description Pin Assignments
... VIN = 5V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) VIN = 5V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) VIN = 5V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) VIN = 8V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) ...
... VIN = 5V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) VIN = 5V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) VIN = 5V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) VIN = 8V, 0 ≤ IOUT ≤ 0.6A, TA = +25°C (Notes 4 & 5) ...
Fuses – Introductory Information
... The time/current characteristic of a certain fuse style is primarily determined by the fuse-element, i.e. by the core wire material, any applied electro-plated coatings and the way the fuse-element is mounted in the fuse enclosure, either as a straight wire or wound on a supporting material or as a ...
... The time/current characteristic of a certain fuse style is primarily determined by the fuse-element, i.e. by the core wire material, any applied electro-plated coatings and the way the fuse-element is mounted in the fuse enclosure, either as a straight wire or wound on a supporting material or as a ...
D1213A-04S Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
MP4030: Application Note for a TRIAC
... The MP4030 integrates active an PFC function. Figure 4 shows the functional block diagram and the LED converter driver. The converter consists of an EMI filter, a diode bridge rectifier, a flyback circuit using the MP4030. The following description summarizes converter operation with active PFC: The ...
... The MP4030 integrates active an PFC function. Figure 4 shows the functional block diagram and the LED converter driver. The converter consists of an EMI filter, a diode bridge rectifier, a flyback circuit using the MP4030. The following description summarizes converter operation with active PFC: The ...
A8586, A8586-1, A8586-2: Wide Input Voltage, Adjustable
... The A8586 maintains high efficiency across a wide load range by the use of pulse-frequency modulation (PFM) as the load reduces. This in turn reduces switching and gate driver losses at light load. A8586-1 and A8586-2 are options that disable the PFM function. A8586-1 also disables the dithering fea ...
... The A8586 maintains high efficiency across a wide load range by the use of pulse-frequency modulation (PFM) as the load reduces. This in turn reduces switching and gate driver losses at light load. A8586-1 and A8586-2 are options that disable the PFM function. A8586-1 also disables the dithering fea ...
Nonisolated High Step-Up Stacked Converter Based on Boost
... VDR, Fig. 6 shows the simplified current waveforms neglecting the switching transitions and assuming that IL b is constant. Since the each average current of IDs1 and IDs2 is the same as Io , this relation can be expressed as (5). Then, using the voltage-second balance across the transformer and (5) ...
... VDR, Fig. 6 shows the simplified current waveforms neglecting the switching transitions and assuming that IL b is constant. Since the each average current of IDs1 and IDs2 is the same as Io , this relation can be expressed as (5). Then, using the voltage-second balance across the transformer and (5) ...
D1213A-04V Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
STM1831
... The STM1831 has an open drain, active-low output which sinks current when the output is asserted. Connect a pull-up resistor from RST to any supply voltage up to 6 V (see Figure 4). Select a resistor value large enough to register a logic low, and small enough to register a logic high, while all of ...
... The STM1831 has an open drain, active-low output which sinks current when the output is asserted. Connect a pull-up resistor from RST to any supply voltage up to 6 V (see Figure 4). Select a resistor value large enough to register a logic low, and small enough to register a logic high, while all of ...
Introduction to Basic Electronic Components
... By restricting the direction of movement of charge carriers, it allows an electric current to flow in one direction, but essentially blocks it in the opposite direction. Diodes may be made from semiconductor materials such as silicon or germanium or may be fabricated using devices depending on therm ...
... By restricting the direction of movement of charge carriers, it allows an electric current to flow in one direction, but essentially blocks it in the opposite direction. Diodes may be made from semiconductor materials such as silicon or germanium or may be fabricated using devices depending on therm ...
MAX1778/ MAX1880–MAX1885 Quad-Output TFT LCD DC-DC Converters with Buffer
... The main step-up converter accurately generates an externally set output voltage up to 13V that can supply the display’s row/column drivers. The converter’s high switching frequency and current-mode PWM architecture provide fast transient response and allow the use of small low-profile inductors and ...
... The main step-up converter accurately generates an externally set output voltage up to 13V that can supply the display’s row/column drivers. The converter’s high switching frequency and current-mode PWM architecture provide fast transient response and allow the use of small low-profile inductors and ...
PWM Regenerative Rectifiers: State of the Art
... a) Power circuit and working principle: Fig. 4-a) shows the power circuit of the fully controlled single-phase PWM rectifier in bridge connection [16], which uses four transistors with antiparallel diodes to produce a controlled DC voltage Vo . For an appropriated operation of this rectifier, the ou ...
... a) Power circuit and working principle: Fig. 4-a) shows the power circuit of the fully controlled single-phase PWM rectifier in bridge connection [16], which uses four transistors with antiparallel diodes to produce a controlled DC voltage Vo . For an appropriated operation of this rectifier, the ou ...
ZX5T3Z
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
SMAT70A / SMBT70A Features Mechanical Data
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
ZXTN4000Z A Product Line of Diodes Incorporated
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
BU7255HFV
... (Note 3) The voltage difference between inverting input and non-inverting input is the differential input voltage. Then input terminal voltage is set to more than VSS. (Note 4) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied. The input ...
... (Note 3) The voltage difference between inverting input and non-inverting input is the differential input voltage. Then input terminal voltage is set to more than VSS. (Note 4) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied. The input ...
Ringing Reduction Techniques for NexFET High
... As discussed in the Background section, the fundamental problem of parasitic ringing is caused by high speed switching of the devices which injects excess energy into the parasitics during the switching transient. The two primary sources of this excess energy are fast current transients (di/dt), and ...
... As discussed in the Background section, the fundamental problem of parasitic ringing is caused by high speed switching of the devices which injects excess energy into the parasitics during the switching transient. The two primary sources of this excess energy are fast current transients (di/dt), and ...
Circuit Components - Tukwila Radio Club
... G6A09 - Which of the following describes the construction of a MOSFET? A. The gate is formed by a back-biased junction B. The gate is separated from the channel with a thin insulating layer C. The source is separated from the drain by a thin insulating layer D. The source is formed by depositing me ...
... G6A09 - Which of the following describes the construction of a MOSFET? A. The gate is formed by a back-biased junction B. The gate is separated from the channel with a thin insulating layer C. The source is separated from the drain by a thin insulating layer D. The source is formed by depositing me ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.